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    • 1. 发明授权
    • Method of manufacturing a semiconductor device
    • 制造半导体器件的方法
    • US06579792B2
    • 2003-06-17
    • US09864127
    • 2001-05-24
    • Walterus Theodorus Franciscus Maria De LaatJohannes Van WingerdenPetrus Maria Meijer
    • Walterus Theodorus Franciscus Maria De LaatJohannes Van WingerdenPetrus Maria Meijer
    • H01L2144
    • H01L21/31116H01L21/32137H01L21/32139
    • The invention relates to a method of manufacturing a semiconductor device, comprising the provision of a substrate (1) having a dielectric layer (2) on this substrate (1), a conductive layer (3) on the dielectric layer (2), an inorganic anti-reflection coating (4) on the conductive layer (3), and a resist mask (6) on the inorganic anti-reflection coating (4). The method further comprises the following steps: patterning the inorganic anti-reflection coating (4) by means of the resist mask (6), patterning the conductive layer (3) by etching down to the dielectric layer (2), removing the resist mask (6), and removing the inorganic anti-reflection coating (4). According to the invention, the inorganic anti-reflection coating (4) is removed by means of a dry etch, using a polymerizing gas. It is achieved by this that no or hardly any changes in the critical dimension will occur.
    • 本发明涉及一种制造半导体器件的方法,包括在该衬底(1)上提供具有电介质层(2)的衬底(1),介电层(2)上的导电层(3), 在导电层(3)上的无机抗反射涂层(4)和无机防反射涂层(4)上的抗蚀剂掩模(6)。 该方法还包括以下步骤:通过抗蚀剂掩模(6)对无机抗反射涂层(4)进行图案化,通过向下蚀刻到电介质层(2)来图案化导电层(3),除去抗蚀剂掩模 (6),并除去无机防反射涂层(4)。 根据本发明,通过使用聚合气体的干蚀刻除去无机抗反射涂层(4)。 通过这一点可以实现,临界尺寸不会发生或几乎不发生任何变化。