专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20120280273A1 METHODS AND SUBSTRATES FOR LASER ANNEALING 审中-公开
标题翻译：用于激光退火的方法和基底
公开(公告)号：US20120280273A1
公开(公告)日：2012-11-08
申请号：US13177022
申请日：2011-07-06
申请人： Victor LENCHENKOV , R. Daniel MCGRATH
发明人： Victor LENCHENKOV , R. Daniel MCGRATH
IPC分类号： H01L29/12 , H01L21/268
CPC分类号： H01L29/12 , H01L21/268
摘要： Methods and substrates for laser annealing are disclosed. The substrate includes a target region to be annealed and a plurality of reflective interfaces. The reflective interfaces cause energy received by the substrate to resonate within the target region. The method includes emitting energy toward the substrate with a laser, receiving the energy with the substrate, and reflecting the received energy with a plurality of reflective interfaces embedded in the substrate to generate a resonance within the target region.
摘要翻译：公开了用于激光退火的方法和基板。基板包括待退火的目标区域和多个反射界面。反射界面引起基板所接收的能量在目标区域内共振。该方法包括用激光向衬底发射能量，用衬底接收能量，并且用嵌入在衬底中的多个反射界面反射所接收的能量，以在目标区域内产生谐振。

2. 发明申请

US20110032398A1 IMAGE SENSOR WITH MULTILAYER INTERFERENCE FILTERS 有权
标题翻译：具有多层干涉滤光片的图像传感器
公开(公告)号：US20110032398A1
公开(公告)日：2011-02-10
申请号：US12537128
申请日：2009-08-06
申请人： Victor Lenchenkov
发明人： Victor Lenchenkov
IPC分类号： H04N5/335 , H01L31/0216
CPC分类号： H01L31/02165 , H01L27/14621 , H01L27/14627
摘要： Image sensors are provided for electronic imaging devices. An image sensor can be formed from an array of image pixels. Bragg-type multilayer interference filters can be formed for the image sensor using dielectric layers with alternating high and low indices of refraction. The multilayer interference filters can be configured to form band-pass filters of desired colors and infrared-blocking filters. Dielectric layers with non-flat bulk absorption properties may be used to tune the absorption of the filters. The interference filters may be provided in a uniform pattern so that an image sensor exhibits a monochrome response or may be arranged in a multicolor color filter array pattern such as a Bayer pattern.
摘要翻译：为电子成像设备提供图像传感器。图像传感器可以由图像像素阵列形成。可以使用具有交替的高和低折射率的电介质层来形成用于图像传感器的布拉格型多层干涉滤光器。多层干涉滤波器可以被配置成形成所需颜色的带通滤波器和红外阻挡滤波器。可以使用具有非平坦体积吸收特性的介电层来调节过滤器的吸收。可以以均匀的图案提供干涉滤光片，使得图像传感器呈现单色响应，或者可以以诸如拜耳图案的多色滤色器阵列图案布置。

3. 发明申请

US20130134535A1 BACKSIDE IMAGE SENSOR PIXEL WITH SILICON MICROLENSES AND METAL REFLECTOR 有权
标题翻译：背面图像传感器像素与硅微型金属和金属反射器
公开(公告)号：US20130134535A1
公开(公告)日：2013-05-30
申请号：US13481589
申请日：2012-05-25
申请人： Victor Lenchenkov
发明人： Victor Lenchenkov
IPC分类号： H01L31/0232
CPC分类号： H01L31/0232 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14636 , H01L27/1464 , H01L27/14678
摘要： A backside illumination (BSI) image sensor pixel that includes microlenses with elevated refractive indices is provided. The image sensor pixel may include a photodiode formed in a silicon substrate, a first microlens formed in a back surface of the substrate, a second microlens formed over a front surface of the substrate, a dielectric stack formed on the front surface of the substrate, and a reflective structure formed in the dielectric stack above the second microlens. The first microlens may be fabricated by forming shallow trench isolation structures in the back surface. The second microlens may be fabricated by depositing polysilicon on the front substrate of the substrate. The first microlens may serve to concentrate light towards the photodiode, whereas the second microlens may serve to collimate light that traverses through the substrate so that light exiting the second microlens will reflect off the reflective structure and back into the photodiode.
摘要翻译：提供了包括具有升高的折射率的微透镜的背面照明（BSI）图像传感器像素。图像传感器像素可以包括形成在硅衬底中的光电二极管，形成在衬底的后表面中的第一微透镜，形成在衬底的前表面上的第二微透镜，形成在衬底的前表面上的电介质叠层，以及形成在第二微透镜上方的电介质叠层中的反射结构。可以通过在后表面中形成浅沟槽隔离结构来制造第一微透镜。可以通过在衬底的前衬底上沉积多晶硅来制造第二微透镜。第一微透镜可以用于将光聚焦到光电二极管，而第二微透镜可以用于准直穿过衬底的光，使得离开第二微透镜的光将反射离开反射结构并返回光电二极管。

4. 发明申请

US20120274568A1 COMPLETE DIGITAL HOLOGRAPHIC IMAGE SENSOR-PROJECTOR COMPUTING UNIT 有权
标题翻译：完整的数字全息图像传感器 - 投影仪计算单元
公开(公告)号：US20120274568A1
公开(公告)日：2012-11-01
申请号：US13161903
申请日：2011-06-16
申请人： Victor Lenchenkov , Dongqing Cao
发明人： Victor Lenchenkov , Dongqing Cao
IPC分类号： G06F3/01 , G03H1/26 , G03H1/16
CPC分类号： G03H1/0443 , G03H1/0005 , G03H1/2294 , G03H2001/0088 , G03H2001/045 , G03H2001/0825
摘要： A hologram projecting system includes a coherent light source for emitting a reference beam onto a real object; and an image sensor for receiving the reference beam and a scattered beam reflected from the real object, and recording a Fourier image of the real object. Also included is a modulator for receiving the Fourier image. The reference beam is passed through the modulator, and configured to interact with the Fourier image to form a virtual image of the real object. The image sensor includes an n×m pixel array, where n and m are numbers of rows and columns, respectively. The modulator includes an n×m pixel array corresponding to the n×m pixel array of the image sensor. The pixels in the n×m pixel array of the image sensor control transmissivity of light in corresponding pixels of the n×m pixel array of the modulator.
摘要翻译：全息投影系统包括用于将参考光束发射到真实物体上的相干光源; 以及用于接收参考光束的图像传感器和从真实物体反射的散射光束，并且记录真实物体的付里叶图像。还包括用于接收傅里叶图像的调制器。参考光束通过调制器，并被配置为与傅立叶图像交互以形成真实对象的虚拟图像。图像传感器包括n×m像素阵列，其中n和m分别是行和列的数量。调制器包括对应于图像传感器的n×m像素阵列的n×m像素阵列。图像传感器的n×m像素阵列中的像素控制调制器的n×m像素阵列的相应像素中的光的透射率。

5. 发明申请

US20120188419A1 Multisection Light Guides for Image Sensor Pixels 有权
标题翻译：用于图像传感器像素的多段导光板
公开(公告)号：US20120188419A1
公开(公告)日：2012-07-26
申请号：US13010512
申请日：2011-01-20
申请人： Victor Lenchenkov
发明人： Victor Lenchenkov
IPC分类号： H04N5/335
CPC分类号： H01L27/14629 , H01L27/14627
摘要： Image sensors may contain arrays of image sensor pixels, each of which includes a microlens and a photosensitive element. A multisection light guide that is made up of multiple light guide layers may be interposed between the microlens and the photosensitive element. The light guide layers may have alternating indicies of refraction to form a spectral filter. The lateral dimensions of the light guide layers may also be configured so that the light guide layers perform spectral filtering. Light guide shapes and sizes may be altered as a function of the lateral position of each image sensor pixel within the image sensor array. The uppermost light guide may be aligned with the microlens and the lowermost light guide may be aligned with the photosensitive element. The lateral positions of each light guide may be laterally shifted with respect to the next to form a staggered stack of light guides.
摘要翻译：图像传感器可以包含图像传感器像素阵列，每个像素包括微透镜和感光元件。由多个导光层构成的多段导光体可插入微透镜和感光元件之间。光导层可以具有交替的折射指标以形成光谱滤光器。导光层的横向尺寸也可以被配置成使得光导层执行光谱滤波。光导形状和尺寸可以作为图像传感器阵列内的每个图像传感器像素的横向位置的函数而改变。最上面的光导可以与微透镜对准，并且最下面的光导可以与感光元件对准。每个光导的横向位置可以相对于下一个横向移动，以形成交错的光导堆叠。

6. 发明申请

US20110241145A1 BACKSIDE ILLUMINATION IMAGE SENSORS WITH REFLECTIVE LIGHT GUIDES 有权
标题翻译：背光照明图像传感器与反光指导
公开(公告)号：US20110241145A1
公开(公告)日：2011-10-06
申请号：US12755351
申请日：2010-04-06
申请人： Victor Lenchenkov
发明人： Victor Lenchenkov
IPC分类号： H01L27/146 , H01L31/0232 , H01L31/18
CPC分类号： H01L27/1464 , H01L27/14629
摘要： Image sensors with backside illumination image pixel arrays are provided. An image pixel array may have image pixels that are formed on a silicon substrate having front and back surfaces. The pixel array may have photodiodes formed in the front surface. A dielectric stack may be formed on the front surface. The dielectric stack may include interconnect structures and reflective light guides. A color filter array may be formed on the back surface of the substrate. Microlenses may be formed on the color filter array from the side facing the back surface. The pixel array may receive incoming light through the microlenses. The incoming light may enter the substrate through the back surface. The incoming light may penetrate the substrate and may be reflected by a light reflector in the reflective light guide back towards the photodiode. The image pixel array may exhibit improved quantum efficiency, sensitivity, and image contrast.
摘要翻译：提供具有背面照明图像像素阵列的图像传感器。图像像素阵列可以具有形成在具有前表面和后表面的硅衬底上的图像像素。像素阵列可以具有形成在前表面中的光电二极管。电介质堆叠可以形成在前表面上。电介质堆叠可以包括互连结构和反射光导。可以在基板的背面上形成滤色器阵列。微透镜可以从面向背面的一侧形成在滤色器阵列上。像素阵列可以通过微透镜接收入射光。入射光可以通过后表面进入基底。入射光可以穿透基底并且可以被反射光导中的光反射器反射回光电二极管。图像像素阵列可以表现出改进的量子效率，灵敏度和图像对比度。

7. 发明授权

US08866947B2 Double pass back side image sensor systems and methods 有权
标题翻译：双回传图像传感器系统和方法
公开(公告)号：US08866947B2
公开(公告)日：2014-10-21
申请号：US13198188
申请日：2011-08-04
申请人： Victor Lenchenkov
发明人： Victor Lenchenkov
IPC分类号： H04N3/14 , H04N5/335 , H01L27/146 , H04N17/00
CPC分类号： H01L27/14629 , H01L27/14603 , H01L27/14685 , H04N17/002
摘要： Double pass back side image (BSI) sensor systems and methods are disclosed. The BSI sensor may include a substrate, pixel reflectors formed on the substrate, and pixel photodiodes fabricated in the substrate, each pixel photodiode positioned over a respective one of the pixel reflectors. Micro-lenses may be formed over each photodiode and an image filter may be formed between the photodiodes and the micro-lenses. The pixels reflectors, photodiodes, micro-lenses, and filter may be formed using CMOS fabrication.
摘要翻译：公开了双回传图像（BSI）传感器系统和方法。 BSI传感器可以包括衬底，形成在衬底上的像素反射器和在衬底中制造的像素光电二极管，每个像素光电二极管位于像素反射器的相应一个上。可以在每个光电二极管上形成微透镜，并且可以在光电二极管和微透镜之间形成图像滤光器。可以使用CMOS制造来形成像素反射器，光电二极管，微透镜和滤光器。

8. 发明授权

US07923799B2 Image sensors with light guides 有权
标题翻译：带导光板的图像传感器
公开(公告)号：US07923799B2
公开(公告)日：2011-04-12
申请号：US12481068
申请日：2009-06-09
申请人： Victor Lenchenkov
发明人： Victor Lenchenkov
IPC分类号： H01L31/0232
CPC分类号： H01L27/14625 , H01L27/14685 , H01L31/02327
摘要： An image sensor may be formed from a planar semiconductor substrate. The image sensor may have an array of pixels. Each pixel may have a photosensitive element that is formed in the substrate and may have a light guide in a dielectric stack that guides light from a microlens and color filter to the photosensitive element. The light guides in pixels that are offset from the center of the image sensor may be tilted so that their longitudinal axes each form a non-zero angle with a vertical axis that lies perpendicular to the planar semiconductor substrate. These light guides may have laterally elongated openings that help collect light. A light guide may have a lower opening that matches the size of an associated photosensitive element. Photosensitive elements that are laterally offset from the center of the image sensor may be tilted. Pixels of different colors may have off-center photosensitive elements.
摘要翻译：图像传感器可以由平面半导体衬底形成。图像传感器可以具有像素阵列。每个像素可以具有形成在基板中的感光元件，并且可以在电介质叠层中具有导光体，其将来自微透镜和滤色器的光导向感光元件。偏离图像传感器中心的像素中的光导可以倾斜，使得它们的纵向轴线与垂直于平面半导体衬底垂直的垂直轴形成非零角度。这些光导可以具有有助于收集光的横向细长的开口。光导可以具有与相关感光元件的尺寸相匹配的下开口。从图像传感器的中心侧向偏移的感光元件可能会倾斜。不同颜色的像素可能具有偏心感光元件。

9. 发明申请

US20100308427A1 IMAGE SENSORS WITH LIGHT GUIDES 有权
标题翻译：具有指南的图像传感器
公开(公告)号：US20100308427A1
公开(公告)日：2010-12-09
申请号：US12481068
申请日：2009-06-09
申请人： Victor Lenchenkov
发明人： Victor Lenchenkov
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/14625 , H01L27/14685 , H01L31/02327
摘要： An image sensor may be formed from a planar semiconductor substrate. The image sensor may have an array of pixels. Each pixel may have a photosensitive element that is formed in the substrate and may have a light guide in a dielectric stack that guides light from a microlens and color filter to the photosensitive element. The light guides in pixels that are offset from the center of the image sensor may be tilted so that their longitudinal axes each form a non-zero angle with a vertical axis that lies perpendicular to the planar semiconductor substrate. These light guides may have laterally elongated openings that help collect light. A light guide may have a lower opening that matches the size of an associated photosensitive element. Photosensitive elements that are laterally offset from the center of the image sensor may be tilted. Pixels of different colors may have off-center photosensitive elements.
摘要翻译：图像传感器可以由平面半导体衬底形成。图像传感器可以具有像素阵列。每个像素可以具有形成在基板中的感光元件，并且可以在电介质叠层中具有导光体，其将来自微透镜和滤色器的光导向感光元件。偏离图像传感器中心的像素中的光导可以倾斜，使得它们的纵向轴线与垂直于平面半导体衬底垂直的垂直轴形成非零角度。这些光导可以具有有助于收集光的横向细长的开口。光导可以具有与相关感光元件的尺寸相匹配的下开口。从图像传感器的中心侧向偏移的感光元件可能会倾斜。不同颜色的像素可能具有偏心感光元件。

10. 发明申请

US20080023738A1 Silicon microlens array 审中-公开
标题翻译：硅微透镜阵列
公开(公告)号：US20080023738A1
公开(公告)日：2008-01-31
申请号：US11494688
申请日：2006-07-28
申请人： Victor Lenchenkov
发明人： Victor Lenchenkov
IPC分类号： H01L31/062
CPC分类号： H01L27/14627 , H01L27/14625 , H01L27/14632 , H01L27/14685
摘要： A silicon microlens and method of forming the microlens for focusing and steering light into the photosensitive region of a pixel. The microlens may be formed integrally within a silicon substrate or within a silicon layer over the substrate by performing a series of concentric etches of decreasing depth to produce a generally convex surface on the silicon substrate over the photosensitive region. A dielectric layer having an index of refraction of approximately half that of the silicon material is formed over the silicon microlens. The microlens may also be formed over the substrate by performing the etches over a polysilicon layer formed over the substrate.
摘要翻译：硅微透镜和形成微透镜的方法，用于将光聚焦并将光转向像素的感光区域。微透镜可以通过执行一系列具有降低深度的同心蚀刻而在硅衬底之内或在衬底内的硅层内整体地形成，以在光敏区域上的硅衬底上产生大致凸形的表面。在硅微透镜上形成具有约为硅材料的一半的折射率的介电层。微透镜也可以通过在衬底上形成的多晶硅层上进行蚀刻而在衬底上形成。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式