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    • 1. 发明授权
    • Mixed-voltage I/O buffer
    • 混合电压I / O缓冲器
    • US07986171B2
    • 2011-07-26
    • US12289132
    • 2008-10-21
    • Chua-Chin WangWei-Chih ChangTzung-Je LeeKuo-Chan Huang
    • Chua-Chin WangWei-Chih ChangTzung-Je LeeKuo-Chan Huang
    • H03B1/00
    • H03K19/0013H03K3/356113H03K19/018521
    • A mixed-voltage input/output (I/O) buffer includes an output buffer circuit. The output buffer circuit includes an output stage circuit, a gate-tracking circuit and a floating N-well circuit. The output stage circuit includes stacked pull-up P-type transistors and stacked pull-down N-type transistors, in which a first P-type transistor of the stacked pull-up P-type transistors and a first N-type transistor of the stacked pull-down N-type transistors are coupled to an I/O pad. The gate-tracking circuit controls gate voltage of the first P-type transistor in accordance with a voltage of the I/O pad to prevent leakage current. The floating N-well circuit provides N-well voltages for an N-well of the first P-type transistor and an N-well of a second P-type transistor, controlling gate voltage of the first P-type transistor, of the gate-tracking circuit to prevent leakage current.
    • 混合电压输入/输出(I / O)缓冲器包括输出缓冲电路。 输出缓冲电路包括输出级电路,栅极跟踪电路和浮动N阱电路。 输出级电路包括堆叠上拉P型晶体管和堆叠式下拉式N型晶体管,其中堆叠上拉P型晶体管的第一P型晶体管和第一N型晶体管 堆叠的下拉式N型晶体管耦合到I / O焊盘。 栅极跟踪电路根据I / O焊盘的电压来控制第一P型晶体管的栅极电压,以防止漏电流。 浮动N阱电路为第一P型晶体管的N阱和第二P型晶体管的N阱提供N阱电压,控制栅极的第一P型晶体管的栅极电压 跟踪电路,以防止漏电流。
    • 5. 发明授权
    • Implantable biomedical chip with modulator for a wireless neural stimulation system
    • 植入式生物医学芯片与无线神经刺激系统的调制器
    • US08219190B2
    • 2012-07-10
    • US12581915
    • 2009-10-20
    • Chua-Chin WangTzung-Je Lee
    • Chua-Chin WangTzung-Je Lee
    • A61N1/00
    • A61N1/32A61N1/36071A61N1/3787
    • The invention relates to an implantable biomedical chip with modulator for a wireless neural stimulating system. The implantable biomedical chip comprises a power regulator, a demodulator, a baseband circuit, a D/A converter, an instrumentation amplifier, an A/D converter and a modulator. According to the invention, the modulator is mounted on the implantable biomedical chip, and can achieve full-duplex communication to improve the controllability and observability. Besides, the power consumption and area occupation is reduced as compared with using discrete components. Therefore, the integration of the implantable biomedical chip can be easily accomplished.
    • 本发明涉及一种具有用于无线神经刺激系统的调制器的可植入生物医学芯片。 可植入生物医学芯片包括功率调节器,解调器,基带电路,D / A转换器,仪表放大器,A / D转换器和调制器。 根据本发明,调制器安装在可植入的生物医学芯片上,并且可以实现全双工通信以提高可控性和可观察性。 此外,与使用分立元件相比,功耗和占地面积减少。 因此,可以容易地实现植入式生物医学芯片的集成。
    • 6. 发明申请
    • Mixed-voltage I/O buffer
    • 混合电压I / O缓冲器
    • US20110241752A1
    • 2011-10-06
    • US13067598
    • 2011-06-13
    • Chua-Chin WangWei-Chih ChangTzung-Je LeeKuo-Chan Huang
    • Chua-Chin WangWei-Chih ChangTzung-Je LeeKuo-Chan Huang
    • H03K5/08
    • H03K19/0013H03K3/356113H03K19/018521
    • A mixed-voltage I/O buffer includes an input buffer circuit. The input buffer circuit includes a first inverter, a first voltage level limiting circuit, a first voltage level pull-up circuit, an input stage circuit, and a logic calibration circuit. The first inverter inverts an input signal to generate a first control signal. The first voltage level limiting circuit limits voltage level of an external signal to generate the input signal transmitted to the first inverter to prevent electrical overstress of the first inverter. The first voltage level pull-up circuit is controlled by the first control signal to pull up voltage level of the input signal inputted into the first inverter. The input stage circuit receives the first control signal to generate corresponding digital signals inputted into a core circuit. The logic calibration circuit calibrates voltage level of the first control signal when the first inverter mis-operates due to the input signal having a low voltage level.
    • 混合电压I / O缓冲器包括输入缓冲电路。 输入缓冲电路包括第一反相器,第一电压电平限制电路,第一电压电平上拉电路,输入级电路和逻辑校准电路。 第一反相器反相输入信号以产生第一控制信号。 第一电压电平限制电路限制外部信号的电压电平,以产生传输到第一逆变器的输入信号,以防止第一逆变器的电过载。 第一电压上拉电路由第一控制信号控制,以提高输入到第一反相器的输入信号的电压电平。 输入级电路接收第一控制信号以产生输入到核心电路的相应的数字信号。 当由于输入信号具有低电压电平而使第一反相器误操作时,逻辑校准电路校准第一控制信号的电压电平。
    • 7. 发明授权
    • Mixed-voltage tolerant I/O buffer and output buffer circuit thereof
    • 混合电压容限I / O缓冲器及其输出缓冲电路
    • US07839174B2
    • 2010-11-23
    • US12330768
    • 2008-12-09
    • Chua-Chin WangTzung-Je LeeYi-Cheng LiuKuo-Chan Huang
    • Chua-Chin WangTzung-Je LeeYi-Cheng LiuKuo-Chan Huang
    • H03K19/094
    • H03K19/018521
    • An output buffer circuit includes a high voltage detecting circuit, a dynamic gate bias generating circuit, an output stage circuit and a pad voltage detector. The high voltage detecting circuit detects a power supply voltage and generates a first and a second determining signals and a first and a second bias voltages according to the power supply voltage. The dynamic gate bias generating circuit is biased by the first and the second bias voltages and receives the first and the second determining signals, for converting logic control signals into corresponding gate bias voltages according to the first and the second determining signals. The pad voltage detector detects a voltage of an I/O pad and provides a pad voltage detecting signal for the output stage circuit to modify an output signal outputted to an I/O pad. A mixed-voltage input/output (I/O) buffer is disclosed herein.
    • 输出缓冲电路包括高电压检测电路,动态栅极偏置产生电路,输出级电路和焊盘电压检测器。 高电压检测电路检测电源电压,并根据电源电压产生第一和第二确定信号以及第一和第二偏置电压。 动态栅极偏置产生电路被第一和第二偏置电压偏置,并接收第一和第二确定信号,用于根据第一和第二确定信号将逻辑控制信号转换成相应的栅极偏置电压。 焊盘电压检测器检测I / O焊盘的电压,并为输出级电路提供焊盘电压检测信号,以修改输出到I / O焊盘的输出信号。 本文公开了混合电压输入/输出(I / O)缓冲器。
    • 9. 发明申请
    • Mixed-Voltage Tolerant I/O Buffer and Output Buffer Circuit Thereof
    • 混合电压容限I / O缓冲器和输出缓冲电路
    • US20100141324A1
    • 2010-06-10
    • US12330768
    • 2008-12-09
    • Chua-Chin WangTzung-Je LeeYi-Cheng LiuKuo-Chan Huang
    • Chua-Chin WangTzung-Je LeeYi-Cheng LiuKuo-Chan Huang
    • H03L5/00
    • H03K19/018521
    • An output buffer circuit includes a high voltage detecting circuit, a dynamic gate bias generating circuit, an output stage circuit and a pad voltage detector. The high voltage detecting circuit detects a power supply voltage and generates a first and a second determining signals and a first and a second bias voltages according to the power supply voltage. The dynamic gate bias generating circuit is biased by the first and the second bias voltages and receives the first and the second determining signals, for converting logic control signals into corresponding gate bias voltages according to the first and the second determining signals. The pad voltage detector detects a voltage of an I/O pad and provides a pad voltage detecting signal for the output stage circuit to modify an output signal outputted to an I/O pad. A mixed-voltage input/output (I/O) buffer is disclosed herein.
    • 输出缓冲电路包括高电压检测电路,动态栅极偏置产生电路,输出级电路和焊盘电压检测器。 高电压检测电路检测电源电压,并根据电源电压产生第一和第二确定信号以及第一和第二偏置电压。 动态栅极偏置产生电路被第一和第二偏置电压偏置,并接收第一和第二确定信号,用于根据第一和第二确定信号将逻辑控制信号转换成相应的栅极偏置电压。 焊盘电压检测器检测I / O焊盘的电压,并为输出级电路提供焊盘电压检测信号,以修改输出到I / O焊盘的输出信号。 本文公开了混合电压输入/输出(I / O)缓冲器。
    • 10. 发明申请
    • Mixed-voltage I/O buffer
    • 混合电压I / O缓冲器
    • US20100097117A1
    • 2010-04-22
    • US12289132
    • 2008-10-21
    • Chua-Chin WangWei-Chih ChangTzung-Je LeeKuo-Chan Huang
    • Chua-Chin WangWei-Chih ChangTzung-Je LeeKuo-Chan Huang
    • H03L5/00
    • H03K19/0013H03K3/356113H03K19/018521
    • A mixed-voltage input/output (I/O) buffer includes an output buffer circuit. The output buffer circuit includes an output stage circuit, a gate-tracking circuit and a floating N-well circuit. The output stage circuit includes stacked pull-up P-type transistors and stacked pull-down N-type transistors, in which a first P-type transistor of the stacked pull-up P-type transistors and a first N-type transistor of the stacked pull-down N-type transistors are coupled to an I/O pad. The gate-tracking circuit controls gate voltage of the first P-type transistor in accordance with a voltage of the I/O pad to prevent leakage current. The floating N-well circuit provides N-well voltages for an N-well of the first P-type transistor and an N-well of a second P-type transistor, controlling gate voltage of the first P-type transistor, of the gate-tracking circuit to prevent leakage current.
    • 混合电压输入/输出(I / O)缓冲器包括输出缓冲电路。 输出缓冲电路包括输出级电路,栅极跟踪电路和浮动N阱电路。 输出级电路包括堆叠上拉P型晶体管和堆叠式下拉式N型晶体管,其中堆叠上拉P型晶体管的第一P型晶体管和第一N型晶体管 堆叠的下拉式N型晶体管耦合到I / O焊盘。 栅极跟踪电路根据I / O焊盘的电压来控制第一P型晶体管的栅极电压,以防止漏电流。 浮动N阱电路为第一P型晶体管的N阱和第二P型晶体管的N阱提供N阱电压,控制栅极的第一P型晶体管的栅极电压 跟踪电路,以防止漏电流。