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1. 发明授权

US08638618B2 Decoder for NAND memory 有权
标题翻译： NAND存储器解码器
公开(公告)号：US08638618B2
公开(公告)日：2014-01-28
申请号：US13185887
申请日：2011-07-19
申请人： Shuo-Nan Hung , Chang Ting Chen , Chi-Yu Hung , Tseng-Yi Liu
发明人： Shuo-Nan Hung , Chang Ting Chen , Chi-Yu Hung , Tseng-Yi Liu
IPC分类号： G11C7/00
CPC分类号： G11C8/10 , G11C13/0028 , G11C16/0483 , G11C16/08 , G11C16/12
摘要： An integrated circuit device has multiple blocks of NAND memory cells, and a high voltage switch. The high voltage switch is coupled to a decoder output and the blocks of NAND memory cells. The high voltage switch has an output voltage range with positive and negative voltages.
摘要翻译：集成电路器件具有多块NAND存储器单元和高压开关。高电压开关耦合到解码器输出和NAND存储器单元的块。高压开关具有正负电压的输出电压范围。

2. 发明授权

US08526235B2 Method and apparatus for reducing read disturb in memory 有权
标题翻译：用于减少存储器中读取干扰的方法和装置
公开(公告)号：US08526235B2
公开(公告)日：2013-09-03
申请号：US13406215
申请日：2012-02-27
申请人： Chun-Hsiung Hung , Shuo-Nan Hung , Tseng-Yi Liu
发明人： Chun-Hsiung Hung , Shuo-Nan Hung , Tseng-Yi Liu
IPC分类号： G11C16/04
CPC分类号： G11C16/10
摘要： Various aspects of a NAND memory include have multiple versions of a high threshold voltage distribution—a version with a reduced maximum, and another version. The version with a reduced maximum has a reduced word line pass voltage.
摘要翻译： NAND存储器的各个方面包括具有高阈值电压分布的多个版本 - 具有减小的最大值的版本和另一版本。具有减小的最大值的版本具有减小的字线通过电压。

3. 发明申请

US20120155181A1 Method and Apparatus for Reducing Read Disturb in Memory 有权
标题翻译：用于减少存储器中读取干扰的方法和装置
公开(公告)号：US20120155181A1
公开(公告)日：2012-06-21
申请号：US13406215
申请日：2012-02-27
申请人： Chun-Hsiung Hung , Shuo-Nan Hung , Tseng-Yi Liu
发明人： Chun-Hsiung Hung , Shuo-Nan Hung , Tseng-Yi Liu
IPC分类号： G11C16/26
CPC分类号： G11C16/10
摘要： Various aspects of a NAND memory include have multiple versions of a high threshold voltage distribution—a version with a reduced maximum, and another version. The version with a reduced maximum has a reduced word line pass voltage.
摘要翻译： NAND存储器的各个方面包括具有高阈值电压分布的多个版本 - 具有减小的最大值的版本和另一版本。具有减小的最大值的版本具有减小的字线通过电压。

4. 发明授权

US08625343B2 Method and apparatus for reducing read disturb in memory 有权
公开(公告)号：US08625343B2
公开(公告)日：2014-01-07
申请号：US12878299
申请日：2010-09-09
申请人： Chung-Hsiung Hung , Shuo-Nan Hung , Tseng-Yi Liu
发明人： Chung-Hsiung Hung , Shuo-Nan Hung , Tseng-Yi Liu
IPC分类号： G11C11/34 , G11C16/04
CPC分类号： G11C16/3427 , G11C11/5642 , G11C16/0483 , G11C16/3418
摘要： Various aspects of a NAND memory include a control circuit that applies a read bias arrangement to a plurality of word lines to read a selected data value stored on a plurality of memory cells by measuring current flowing between the first end and the second end of the series of memory cells. The read bias arrangement is applied to word lines of the plurality of word lines applies only word line voltages less than a second maximum of a second threshold voltage distribution.

5. 发明授权

US08139425B2 Voltage regulation method and memory applying thereof 有权
标题翻译：电压调节方法及其记忆应用
公开(公告)号：US08139425B2
公开(公告)日：2012-03-20
申请号：US12943372
申请日：2010-11-10
申请人： Han-Sung Chen , Tseng-Yi Liu
发明人： Han-Sung Chen , Tseng-Yi Liu
IPC分类号： G11C5/14
CPC分类号： G11C7/1006 , G11C8/08 , G11C16/04 , G11C16/08 , G11C29/02 , G11C29/021 , G11C29/028 , G11C2029/1202
摘要： A voltage regulating method applied to a memory to regulate a word line voltage corresponding to a set of memory cells of the memory includes the following steps. Firstly, a first value, which is for indicating an amount of data having a specific data value in a set of written data, is counted, wherein the set of written data is written into the set of memory cells. Next, a second value, which is for indicating an amount of data having the specific data value in a set of read data, is counted, wherein the set of read data is obtained by reading the set of written data. Then, a regulating voltage is determined according to a difference between the first and second values. After that, the word line voltage is regulated to be a sum of the word line voltage and the regulating voltage.
摘要翻译：应用于存储器以调节对应于存储器的一组存储器单元的字线电压的电压调节方法包括以下步骤。首先，对用于指示在一组写入数据中具有特定数据值的数据量的第一值进行计数，其中将该组写入数据写入该组存储器单元。接下来，对用于指示在一组读取数据中具有特定数据值的数据量的第二值进行计数，其中通过读取该组写入数据来获得读取数据集合。然后，根据第一和第二值之间的差来确定调节电压。之后，字线电压被调节为字线电压和调节电压之和。

6. 发明申请

US20120063236A1 Method and Apparatus for Reducing Read Disturb in Memory 有权
标题翻译：用于减少存储器中读取干扰的方法和装置
公开(公告)号：US20120063236A1
公开(公告)日：2012-03-15
申请号：US12878299
申请日：2010-09-09
申请人： Chun Hsiung Hung , Shuo-Nan Hung , Tseng-Yi Liu
发明人： Chun Hsiung Hung , Shuo-Nan Hung , Tseng-Yi Liu
IPC分类号： G11C16/04
CPC分类号： G11C16/3427 , G11C11/5642 , G11C16/0483 , G11C16/3418
摘要： Various aspects of a NAND memory include a control circuit that applies a read bias arrangement to a plurality of word lines to read a selected data value stored on a plurality of memory cells by measuring current flowing between the first end and the second end of the series of memory cells. The read bias arrangement is applied to word lines of the plurality of word lines applies only word line voltages less than a second maximum of a second threshold voltage distribution.
摘要翻译： NAND存储器的各个方面包括控制电路，该控制电路通过测量在串联的第一端和第二端之间流动的电流来将读偏置装置施加到多个字线以读取存储在多个存储单元上的选定数据值的记忆细胞。读取偏置布置被施加到多个字线的字线仅施加小于第二阈值电压分布的第二最大值的字线电压。

7. 发明授权

US07859917B2 Voltage regulation method and memory applying thereof 有权
标题翻译：电压调节方法及其记忆应用
公开(公告)号：US07859917B2
公开(公告)日：2010-12-28
申请号：US12350381
申请日：2009-01-08
申请人： Han-Sung Chen , Tseng-Yi Liu
发明人： Han-Sung Chen , Tseng-Yi Liu
IPC分类号： G11C5/14
CPC分类号： G11C7/1006 , G11C8/08 , G11C16/04 , G11C16/08 , G11C29/02 , G11C29/021 , G11C29/028 , G11C2029/1202
摘要： A voltage regulating method applied to a memory to regulate a word line voltage corresponding to a set of memory cells of the memory includes the following steps. Firstly, a first value, which is for indicating an amount of data having a specific data value in a set of written data, is counted, wherein the set of written data is written into the set of memory cells. Next, a second value, which is for indicating an amount of data having the specific data value in a set of read data, is counted, wherein the set of read data is obtained by reading the set of written data. Then, a regulating voltage is determined according to a difference between the first and second values. After that, the word line voltage is regulated to be a sum of the word line voltage and the regulating voltage.
摘要翻译：应用于存储器以调节对应于存储器的一组存储器单元的字线电压的电压调节方法包括以下步骤。首先，对用于指示在一组写入数据中具有特定数据值的数据量的第一值进行计数，其中将该组写入数据写入该组存储器单元。接下来，对用于指示在一组读取数据中具有特定数据值的数据量的第二值进行计数，其中通过读取该组写入数据来获得读取数据集合。然后，根据第一和第二值之间的差来确定调节电压。之后，字线电压被调节为字线电压和调节电压之和。

8. 发明申请

US20100172191A1 Voltage Regulation Method and Memory Applying Thereof 有权
标题翻译：电压调节方法及其应用
公开(公告)号：US20100172191A1
公开(公告)日：2010-07-08
申请号：US12350381
申请日：2009-01-08
申请人： Han-Sung Chen , Tseng-Yi Liu
发明人： Han-Sung Chen , Tseng-Yi Liu
IPC分类号： G11C7/00 , G11C5/14
CPC分类号： G11C7/1006 , G11C8/08 , G11C16/04 , G11C16/08 , G11C29/02 , G11C29/021 , G11C29/028 , G11C2029/1202
摘要： A voltage regulating method applied to a memory to regulate a word line voltage corresponding to a set of memory cells of the memory comprises the following steps. Firstly, a first value, which is for indicating an amount of data having a specific data value in a set of written data, is counted, wherein the set of written data is written into the set of memory cells. Next, a second value, which is for indicating an amount of data having the specific data value in a set of read data, is counted, wherein the set of read data is obtained by reading the set of written data. Then, a regulating voltage is determined according to a difference between the first and second values. After that, the word line voltage is regulated to be a sum of the word line voltage and the regulating voltage.
摘要翻译：应用于存储器以调节对应于存储器的一组存储器单元的字线电压的电压调节方法包括以下步骤。首先，对用于指示在一组写入数据中具有特定数据值的数据量的第一值进行计数，其中将该组写入数据写入该组存储器单元。接下来，对用于指示在一组读取数据中具有特定数据值的数据量的第二值进行计数，其中通过读取该组写入数据来获得读取数据集合。然后，根据第一和第二值之间的差来确定调节电压。之后，字线电压被调节为字线电压和调节电压之和。

9. 发明申请

US20110058430A1 Voltage Regulation Method and Memory Applying Thereof 有权
标题翻译：电压调节方法及其应用
公开(公告)号：US20110058430A1
公开(公告)日：2011-03-10
申请号：US12943372
申请日：2010-11-10
申请人： Han-Sung Chen , Tseng-Yi Liu
发明人： Han-Sung Chen , Tseng-Yi Liu
IPC分类号： G11C7/10 , G11C5/14 , H03M13/05 , G06F11/10
CPC分类号： G11C7/1006 , G11C8/08 , G11C16/04 , G11C16/08 , G11C29/02 , G11C29/021 , G11C29/028 , G11C2029/1202
摘要： A voltage regulating method applied to a memory to regulate a word line voltage corresponding to a set of memory cells of the memory comprises the following steps. Firstly, a first value, which is for indicating an amount of data having a specific data value in a set of written data, is counted, wherein the set of written data is written into the set of memory cells. Next, a second value, which is for indicating an amount of data having the specific data value in a set of read data, is counted, wherein the set of read data is obtained by reading the set of written data. Then, a regulating voltage is determined according to a difference between the first and second values. After that, the word line voltage is regulated to be a sum of the word line voltage and the regulating voltage.
摘要翻译：应用于存储器以调节对应于存储器的一组存储器单元的字线电压的电压调节方法包括以下步骤。首先，对用于指示在一组写入数据中具有特定数据值的数据量的第一值进行计数，其中将该组写入数据写入该组存储器单元。接下来，对用于指示在一组读取数据中具有特定数据值的数据量的第二值进行计数，其中通过读取该组写入数据来获得读取数据集合。然后，根据第一和第二值之间的差来确定调节电压。之后，字线电压被调节为字线电压和调节电压之和。

10. 发明授权

US06608499B2 Method for compensating a threshold voltage of a neighbor bit 有权
标题翻译：用于补偿相邻位的阈值电压的方法
公开(公告)号：US06608499B2
公开(公告)日：2003-08-19
申请号：US10128717
申请日：2002-04-23
申请人： Tseng-Yi Liu , Han-Sung Chen , Cheng-Jye Liu , Chia-Hsing Chen , Chun-Hsiung Hung
发明人： Tseng-Yi Liu , Han-Sung Chen , Cheng-Jye Liu , Chia-Hsing Chen , Chun-Hsiung Hung
IPC分类号： H03K1923
CPC分类号： G11C16/3427 , G11C16/0475 , G11C16/10 , G11C16/3418
摘要： A method for compensating a threshold voltage of a neighbor bit, are provided. The method includes the first step of arbitrating the word line voltages applied to bits demanded to be programmed, wherein the the word line voltages are arbitrated according to the threshold voltages of the neighbor bits adjacent to the bits. Next, the bits, to which a same word line voltage should be applied, in the memory cells are distributed to a group of bits with the same word line voltage. Then, the same word line voltage is applied to the bits of the group of bits with the same word line voltage.
摘要翻译：提供了用于补偿相邻位的阈值电压的方法。该方法包括对施加到要编程的位的字线电压进行仲裁的第一步骤，其中根据与位相邻的相邻位的阈值电压对字线电压进行仲裁。接下来，在存储器单元中应该施加相同字线电压的位被分配到具有相同字线电压的一组位。然后，相同的字线电压被加到具有相同字线电压的位组中。

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