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    • 1. 发明授权
    • Silica glass crucible
    • 二氧化硅玻璃坩埚
    • US07695787B2
    • 2010-04-13
    • US10801683
    • 2004-03-17
    • Yoshiyuki TsujiToshio Tsujimoto
    • Yoshiyuki TsujiToshio Tsujimoto
    • B44C1/22C04B35/00F16L9/10F27B14/10
    • C03C19/00B24C1/08C03C15/00C30B15/10Y10T117/1032Y10T117/108Y10T428/13Y10T428/131
    • To provide a silica glass crucible, wherein there are no problems of generating a sinking and buckling when said crucible is used for pulling up silicon single crystal at a high temperature. The silica glass crucible used for pulling up the silicon single crystal, wherein at least an outer surface of a wall part of the crucible is covered with fine grooves having a length of less than 200 μm, a width of less than 30 μm and a depth of from more than 3 μm to less than 30 μm. Preferably, said fine groves are formed by carrying out a sand-blast treatment and a hydrofluoric acid etching and exist on more than 10% of the outer surface of the crucible, and a sliding frictional coefficient of the outer surface of the crucible to a carbon at 1500 degree C. is more than 0.6.
    • 为了提供一种二氧化硅玻璃坩埚,其中当在高温下使用所述坩埚拉起硅单晶时,不存在产生下沉和翘曲的问题。 用于提升硅单晶的二氧化硅玻璃坩埚,其中至少坩埚的壁部的外表面被细长的小于200μm,宽度小于30μm的细槽和深度 大于3μm至小于30μm。 优选地,通过进行喷砂处理和氢氟酸蚀刻而形成所述细小花纹,并且存在于坩埚的外表面的10%以上,坩埚的外表面的滑动摩擦系数为碳 在1500摄氏度,大于0.6。
    • 9. 发明申请
    • SILICA GLASS CRUCIBLE
    • 二氧化硅玻璃可溶
    • US20100154703A1
    • 2010-06-24
    • US12717390
    • 2010-03-04
    • Yoshiyuki TSUJIToshio Tsujimoto
    • Yoshiyuki TSUJIToshio Tsujimoto
    • C30B15/10B44C1/22
    • C03C19/00B24C1/08C03C15/00C30B15/10Y10T117/1032Y10T117/108Y10T428/13Y10T428/131
    • To provide a silica glass crucible, wherein there are no problems of generating a sinking and buckling when said crucible is used for pulling up silicon single crystal at a high temperature.The silica glass crucible used for pulling up the silicon single crystal, wherein at least an outer surface of a wall part of the crucible is covered with fine grooves having a length of less than 200 μm, a width of less than 30 μm and a depth of from more than 3 μm to less than 30 μm. Preferably, said fine groves are formed by carrying out a sand-blast treatment and a hydrofluoric acid etching and exist on more than 10% of the outer surface of the crucible, and a sliding frictional coefficient of the outer surface of the crucible to a carbon at 1500 degree C. is more than 0.6.
    • 为了提供一种二氧化硅玻璃坩埚,其中当在高温下使用所述坩埚拉起硅单晶时,不存在产生下沉和翘曲的问题。 用于提升硅单晶的二氧化硅玻璃坩埚,其中至少坩埚的壁部的外表面被细长的小于200μm,宽度小于30μm的细槽和深度 大于3μm至小于30μm。 优选地,通过进行喷砂处理和氢氟酸蚀刻而形成所述细小花纹,并且存在于坩埚的外表面的10%以上,坩埚的外表面的滑动摩擦系数为碳 在1500摄氏度,大于0.6。