专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110120053A1 ORGANOMETALLIC-COMPOUND FEEDER 审中-公开
标题翻译：有机复合饲料
公开(公告)号：US20110120053A1
公开(公告)日：2011-05-26
申请号：US12935518
申请日：2009-03-30
申请人： Toshimitsu Abe
发明人： Toshimitsu Abe
IPC分类号： B65B31/00
CPC分类号： C23C16/4481 , C30B25/14
摘要： An organometallic compound feeder comprising a packing container into which an organometallic compound that is in a solid state at an ordinary temperature is to be packed and a carrier gas is to be fed to sublimate the organometallic compound further comprises:a support plate which is to hold the organometallic compound carried on an inert carrier in the packing container and which is to allow the carrier gas to pass therethrough,a carrier gas inlet in an upper portion of the packing container,a carrier gas outlet which is opened below the support plate in a bottom portion of the packing container, anda baffle plate which is attached between the support plate and the carrier gas outlet and is larger than an opening diameter of the carrier gas outlet, andthe feeder is configured so as to allow carrier gas to pass downward through the organometallic compound carried on the inert carrier packed on the support plate.
摘要翻译：一种有机金属化合物进料器，包括一个包装容器，待填充常温下为固态的有机金属化合物和一种载气，以使升华的有机金属化合物进一步包括：一个支撑板，承载在包装容器中的惰性载体上并且允许载气从其中通过的有机金属化合物，在包装容器的上部的载气进口，在支撑板下方开口的载气出口包装容器的底部，以及安装在支撑板和载气出口之间并且大于载气出口的开口直径的挡板，并且进料器构造成允许载气向下通过通过载在载体上的惰性载体上的有机金属化合物。

2. 发明申请

US20070158684A1 Compound semiconductor, method of producing the same, and compound semiconductor device 审中-公开
标题翻译：化合物半导体及其制造方法以及化合物半导体装置
公开(公告)号：US20070158684A1
公开(公告)日：2007-07-12
申请号：US10560160
申请日：2004-05-24
申请人： Kenji Kohiro , Kazumasa Ueda , Toshimitsu Abe , Masahiko Hata
发明人： Kenji Kohiro , Kazumasa Ueda , Toshimitsu Abe , Masahiko Hata
IPC分类号： H01L31/00
CPC分类号： H01L29/7783 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02505 , H01L21/02546 , H01L21/0262
摘要： An InGaP buffer layer (3) is formed on a semi-insulating GaAs substrate (1) to a thickness of not less than 5 nm and not greater than 500 nm and an InAlAs layer (4) and an InGaAs channel layer (5) are grown thereon to form a heterostructure. An In segregation effect occurs at the time of forming the InGaP buffer layer (3), so that the region of the InGaP buffer layer (3) near the layer above becomes excessive in In. As a result, the composition of the surface of the InGaP buffer layer (3) becomes very close to the composition of InP, thereby suppressing occurrence of misfit dislocations that can result in degradation of the surface condition. Further, the surface condition of the InAlAs layer (4) and InGaAs channel layer (5) formed thereon can be made good.
摘要翻译：在半绝缘GaAs衬底（1）上形成厚度不小于5nm且不大于500nm的InGaP缓冲层（3），并且InAlAs层（4）和InGaAs沟道层（5）为在其上生长以形成异质结构。在形成InGaP缓冲层（3）时发生An偏析效应，使得In附近的InGaP缓冲层（3）的区域变得过大。结果，InGaP缓冲层（3）的表面的组成变得非常接近InP的组成，从而抑制可能导致表面状态劣化的失配位错的发生。此外，可以使形成在其上的InAlAs层（4）和InGaAs沟道层（5）的表面状态良好。

3. 发明申请

US20080121182A1 APPARATUS OF SUPPLYING ORGANOMETALLIC COMPOUND 审中-公开
标题翻译：供应有机化合物的装置
公开(公告)号：US20080121182A1
公开(公告)日：2008-05-29
申请号：US11941139
申请日：2007-11-16
申请人： Toshimitsu Abe , Naoyuki Ide
发明人： Toshimitsu Abe , Naoyuki Ide
IPC分类号： C23C16/18
CPC分类号： C23C16/4481 , C23C16/4483
摘要： An apparatus of supplying an organometallic compound comprising a vessel into which a solid organometallic compound at room temperature is placed and a carrier gas to sublimate the organometallic compound is supported, a supporter plate capable of maintaining an organometallic compound supported on an inert support in the lower part of the vessel with passing a carrier gas therethrough, a carrier gas inlet in the upper part of the vessel, and a carrier gas outlet downward of the supporter plate of being the bottom part of the vessel are disposed, and wherein the carrier gas is passed through the organometallic compound supported on the inert support loaded on the supporter plate from the above downward, is provided.
摘要翻译：一种供给有机金属化合物的装置，其中载置有室温固体有机金属化合物的容器和载气使有机金属化合物升华的有机金属化合物被支撑，能够将负载在惰性载体上的有机金属化合物保持在下层的载体板容器的通过载气的部分，容器上部的载气入口和作为容器底部的载板向下的载气出口，其中载气是提供了从上面向下穿过负载在载体板上的惰性载体上的有机金属化合物。

4. 发明授权

US06191014B1 Method for manufacturing compound semiconductor 有权
标题翻译：化合物半导体的制造方法
公开(公告)号：US06191014B1
公开(公告)日：2001-02-20
申请号：US09361617
申请日：1999-07-27
申请人： Yuichi Sasajima , Masahiko Hata , Toshimitsu Abe
发明人： Yuichi Sasajima , Masahiko Hata , Toshimitsu Abe
IPC分类号： H01L2122
CPC分类号： C30B25/02 , C30B29/40 , C30B29/42 , H01L21/02395 , H01L21/02546 , H01L21/02579 , H01L21/0262 , Y10S438/918
摘要： Provided is a manufacturing method of a compound semiconductor having at least one layer of carbon-doped p-type semiconductor epitaxial layer by a MOVPE process, wherein carbon trichloride bromide is used as a carbon source of carbon to be added to the p-type semiconductor epitaxial layer. In the method the etching amount during growth is relatively small, and carbon can be added to a high concentration even with a large MOVPE apparatus.
摘要翻译：提供了通过MOVPE方法具有至少一层碳掺杂p型半导体外延层的化合物半导体的制造方法，其中使用三氯化碳溴作为要添加到p型半导体的碳的碳源外延层。在该方法中，生长期间的蚀刻量相对较小，即使使用大型MOVPE装置也可以将碳添加到高浓度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式