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    • 1. 发明授权
    • Pellicle for lithography
    • 光刻胶片
    • US08426084B2
    • 2013-04-23
    • US12954351
    • 2010-11-24
    • Toru ShirasakiKenichi Fukuda
    • Toru ShirasakiKenichi Fukuda
    • G03F1/64
    • G03F1/64G03F1/62
    • A pellicle 10 for lithography includes a pellicle frame 3, a pellicle membrane 1 adhered onto the upper end surface of the pellicle frame 3 and an agglutinant layer 4 formed on the lower surface of the pellicle frame 3 and the agglutinant layer 4 is formed by hardening a curable composition containing a straight chain perfluoro compound having a perfluoro structure in a main chain. The thus constituted pellicle 10 generates only a small amount of a decomposition gas even when it is used for a long time, thereby preventing solid-like foreign materials from separating out on a pattern region of a photomask 5 and can suppress degradation of an the agglutinant agent contained in an agglutinant layer 4 to be used for fixing a photomask 5 to the pellicle frame 3. Further, this pellicle 10 can be easily peeled off from a photomask 5 and replaced with a new one.
    • 用于光刻的防护薄膜组件10包括防护薄膜框架3,粘附在防护薄膜组件框架3的上端表面上的防护薄膜1和形成在防护薄膜框架3的下表面上的凝集层4和凝集层4通过硬化 含有在主链中具有全氟结构的直链全氟化合物的固化性组合物。 即使长时间使用,这样构成的防护薄膜组件10仅产生少量的分解气体,从而防止固体状杂质在光掩模5的图案区域分离出来,并且能够抑制凝集物的劣化 包含在用于将光掩模5固定在防护薄膜组件框架3上的凝集层4中的试剂。此外,该防护薄膜组件10可以容易地从光掩模5剥离并替换为新的。
    • 3. 发明授权
    • Pellicle frame
    • 防护薄膜框架
    • US07968252B2
    • 2011-06-28
    • US12204257
    • 2008-09-04
    • Toru Shirasaki
    • Toru Shirasaki
    • G03F1/00B32B1/00
    • G03F1/64Y10T428/13
    • The present invention is directed to reduce pellicle frame distortions due to the tension of a pellicle film and caused during handling, thereby providing an excellent pellicle frame capable of reducing the distortion of a photomask due to a pellicle affixation. In the pellicle frame of the present invention, the frame consists of a plurality of layers of which at least one layer has a different elastic modulus. It is preferable to: make the pellicle frame compositely of a layer having an elastic modulus of 10 GPa or smaller and of a layer having an elastic modulus of 50 GPa or greater; join these layers of the pellicle frame in a direction perpendicular to the pellicle film face; laminate such that layers having a large elastic modulus form the outermost layer; or reverse this lamination structure.
    • 本发明涉及由于防护薄膜的张力而引起的防护薄膜组件的变形,并且在处理过程中引起的,由此提供了能够减少由于防护薄膜组件而导致的光掩模变形的优良防护薄膜框架。 在本发明的防护薄膜框架中,框架由多个层组成,至少一层具有不同的弹性模量。 优选:使防弹薄膜组件复合地具有弹性模量为10GPa以下的层和弹性模量为50GPa以上的层; 在防护薄膜组件框架的这些层垂直于防护薄膜表面的方向上连接; 使得具有大弹性模量的层形成最外层; 或反转该层压结构。
    • 5. 发明申请
    • PELLICLE FOR LITHOGRAPHY
    • 胶版胶片
    • US20070238030A1
    • 2007-10-11
    • US11683638
    • 2007-03-08
    • Toru Shirasaki
    • Toru Shirasaki
    • G03F1/14A47G1/12G03F1/00
    • G03F1/62G03F7/70983
    • The invention provides a pellicle for lithography used in the photolithography, affording a wider range of transmissivity to inclinedly incident beams that can be used in a photolithographic procedure. The pellicle used in the photolithography using ArF excimer laser beams is characterized in that the pellicle has a pellicle membrane having a thickness which is 400 nm or smaller and at which the membrane exhibits a local maximum transmissivity to a vertically incident ArF excimer laser beam. Also, the pellicle is characterized by having a pellicle membrane having a thickness at which the membrane exhibits a local maximum transmissivity to an inclinedly incident ArF excimer laser beam. Herein, the angle of inclined incidence is preferably 13.4 degrees, and the pellicle membrane has preferably a thickness of 600 nm or smaller, in particular in a range selected from 560 to 563 nm and 489 to 494 nm and 418 to 425 nm and 346 to 355 nm and 275 to 286 nm and 204 to 217 nm.
    • 本发明提供了一种用于光刻中的光刻用防护薄膜,为可用于光刻工艺的倾斜入射光束提供更宽的透射率范围。 使用ArF准分子激光的光刻法中使用的防护薄膜组件的特征在于,防护薄膜组件具有厚度为400nm以下的防护薄膜,并且膜对垂直入射的ArF准分子激光束具有局部最大透射率。 此外,防护薄膜组件的特征在于具有薄膜,薄膜的厚度在该薄膜的表现出对倾斜入射的ArF准分子激光束的局部最大透射率。 这里,倾斜入射角优选为13.4度,防护薄膜的厚度优选为600nm以下,特别优选为560〜563nm,489〜494nm,418〜425nm,346〜 355nm和275至286nm和204至217nm。
    • 6. 发明授权
    • Pellicle, photomask, pellicle frame, and method for manufacturing pellicle
    • 防护薄膜组件,光掩模,防护薄膜组件和防护薄膜制造方法
    • US06977126B2
    • 2005-12-20
    • US10016628
    • 2001-12-17
    • Toru Shirasaki
    • Toru Shirasaki
    • G03F1/62G03F1/64H01L21/027G03F9/00G03F7/00
    • G03F1/64G03F7/70808
    • A pellicle for protecting a reticle, on which a circuit pattern is formed for manufacturing a semiconductor device, from an attachment of a foreign matter, comprising: a pellicle film having a predetermined thickness, through which a light transmits to the reticle; and a pellicle frame, on which a periphery of the pellicle film contacts, including: a body part having a frame shape, the height of which is substantially constant all over the body part; and an upper protruding part formed on an upper end of the body part that protrudes upward from the upper end of the body part for directly contacting with a surface of the pellicle film, the height of the upper protruding part being constant all over the upper protruding part.
    • 一种用于保护用于制造半导体器件的电路图案用于制造半导体器件的掩模版的防护薄膜,其特征在于,包括:具有预定厚度的防护薄膜,光通过该防护薄膜透射到所述掩模版; 以及防护薄膜组件,防护薄膜组件的周边与其接触,防护薄膜组件框架包括:主体部分,其具有框架形状,其高度在整个身体部分上基本上恒定; 以及形成在所述主体部的上端部的上部突出部,其从所述主体部的上端向上方突出,以与所述防护薄膜的表面直接接触,所述上部突出部的高度在所述上部突出部 部分。
    • 7. 发明授权
    • Framed pellicle for protection of photolithographic photomask
    • 用于保护光刻光掩模的防护薄膜
    • US06593034B1
    • 2003-07-15
    • US09706757
    • 2000-11-07
    • Toru Shirasaki
    • Toru Shirasaki
    • G03F900
    • G03F1/64
    • An improvement is provided in the photolithographic patterning of a photoresist layer by pattern-wise exposure to short-wavelength ultraviolet light through a pattern-bearing photomask which is dustproof protected by mounting a framed pellicle thereon. With an object to overcome the troubles therein due to absorption of short-wavelength ultraviolet light by oxygen and the interaction of atmospheric oxygen in the space surrounded by the photomask and the framed pellicle with the energy of the short-wavelength ultraviolet, the framed pellicle is provided in the frame with at least two gas-passage openings through which the air inside is replaced with nitrogen in conducting the ultraviolet exposure. The openings are preferably covered with a filter member and covered further with a covering member having a gas nozzle which is connected to a feed source of an inert gas such as nitrogen.
    • 通过图案式曝光到短波紫外光,通过在其上安装框架防护薄膜的防尘防护图案的光掩模,在光致抗蚀剂层的光刻图案中提供了改进。 为了克服其中由于氧气引起的短波长紫外光的吸收以及由光掩模和框架防护薄膜组成的空间中的大气氧与短波长紫外线的能量的相互作用的目的,框架防护薄膜是 在框架中设置有至少两个气体通道开口,在进行紫外线曝光时,内部的空气被氮气置换。 这些开口优选用过滤器构件覆盖,并进一步覆盖具有气体喷嘴的覆盖构件,该气体喷嘴连接到诸如氮气的惰性气体的进料源。