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    • 1. 发明授权
    • Method of inspecting holes using charged-particle beam
    • 使用带电粒子束检查孔的方法
    • US06723987B2
    • 2004-04-20
    • US09727358
    • 2000-11-30
    • Toru Ishimoto
    • Toru Ishimoto
    • H05H302
    • G01R31/307G01N23/00
    • A method of inspecting contact holes or via holes in a semiconductor device. Plural small measurement regions Q are established on the whole sample surface. The measurement regions Q are successively irradiated with an electron beam. At this time, an absorption current flowing across the sample is detected and amplified by a current amplifier. A control unit stores data about the absorption current signal derived from the small regions Q in locations of a memory which are addressed corresponding to the positions of the small regions. The control unit reads data about absorption current intensity values from the memory and classifies the intensity values into four intensity ranges, for example, to which different brightness intensities are assigned.
    • 一种检查半导体器件中的接触孔或通孔的方法。 在整个样品表面上建立了多个小​​的测量区域Q。 测量区域Q依次用电子束照射。 此时,流过样品的吸收电流被电流放大器检测和放大。 控制单元将关于从小区域Q导出的吸收电流信号的数据存储在对应于小区域的位置的存储器的位置中。 控制单元从存储器读取关于吸收电流强度值的数据,并将强度值分类为四个强度范围,例如分配不同亮度强度的强度范围。