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    • 6. 发明授权
    • Ultra flat polishing
    • 超平面抛光
    • US5733182A
    • 1998-03-31
    • US354907
    • 1994-12-12
    • Tomoaki MuramatsuTakashi Yoshida
    • Tomoaki MuramatsuTakashi Yoshida
    • B24B37/04B24B37/30B24B41/06H01L21/304B24B5/00
    • B24B37/04B24B41/068
    • A polishing apparatus comprises a pressure container having a first opening at its bottom and being rotatable about an axis perpendicular to a plane of the first opening; a wafer support coupled elastically to the first opening, sealing the first opening hermetically and having a wafer supporting surface; and a lower surface plate disposed underneath the wafer supporting surface and having a polishing surface approximately parallel to the wafer supporting surface. The wafer support may be provided with flatness adjusting means for selectively applying a larger pressure on a region of the wafer held on the wafer supporting surface than a pressure on other region. The flatness adjusting means may comprise a plurality of pressing pins, or may comprise a hollow within the wafer support, a surface plate having elasticity and sealing the hollow, and means for applying pressure to the hollow. Wafer can be polished under uniform pressure applied on the back surface. Flatness of the wafer can be improved.
    • 抛光装置包括:压力容器,其底部具有第一开口,并可围绕垂直于第一开口平面的轴线旋转; 晶片支撑件,其弹性耦合到所述第一开口,密封所述第一开口并具有晶片支撑表面; 以及设置在晶片支撑表面下方并具有大致平行于晶片支撑表面的抛光表面的下表面板。 晶片支撑件可以设置有平坦度调节装置,用于在保持在晶片支撑表面上的晶片的区域上选择性地施加比在其它区域上的压力更大的压力。 平坦度调节装置可以包括多个按压销,或者可以包括晶片支撑件内的中空部分,具有弹性并密封中空部分的表面板以及向中空部分施加压力的装置。 晶圆可以在施加在背面的均匀压力下抛光。 可以提高晶片的平坦度。