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1. 发明授权

US07696210B2 Gonadotropin releasing hormone receptor antagonists 失效
标题翻译：促性腺激素释放激素受体拮抗剂
公开(公告)号：US07696210B2
公开(公告)日：2010-04-13
申请号：US11154795
申请日：2005-06-16
申请人： Lloyd Michael Garrick , Daniel Michael Green , Diane Barbara Hauze , Kenneth Lewis Kees , Joseph Theodore Lundquist, IV , Charles William Mann , John Francis Mehlmann , Jeffrey Claude Pelletier , John Francis Rogers, Jr. , Jay Edward Wrobel
发明人： Lloyd Michael Garrick , Daniel Michael Green , Diane Barbara Hauze , Kenneth Lewis Kees , Joseph Theodore Lundquist, IV , Charles William Mann , John Francis Mehlmann , Jeffrey Claude Pelletier , John Francis Rogers, Jr. , Jay Edward Wrobel
IPC分类号： A61K31/497 , C07D403/00
CPC分类号： C07D403/12 , C07D235/08 , C07D401/12 , C07D401/14 , C07D403/04 , C07D403/06 , C07D403/14 , C07D409/14 , C07D413/12 , C07D417/12 , C07D471/04 , C07D487/04
摘要： Compounds of Formula I, useful as Gonadotropin Releasing Hormone (“GnRH”) (also known as Leutinizing Hormone Releasing Hormone) receptor antagonists, are disclosed.
摘要翻译：公开了可用作促性腺激素释放激素（“GnRH”）（也称为激素释放激素）受体拮抗剂的式I化合物。

2. 发明申请

US20070293052A1 APPARATUS AND METHOD FOR OPTICAL INTERFERENCE FRINGE BASED INTEGRATED CIRCUIT PROCESSING 有权
标题翻译：基于光干扰法的基于集成电路处理的装置和方法
公开(公告)号：US20070293052A1
公开(公告)日：2007-12-20
申请号：US11754466
申请日：2007-05-29
申请人： Erwan Le Roy , Chun-Cheng Tsao , Theodore Lundquist , Rajesh Jain
发明人： Erwan Le Roy , Chun-Cheng Tsao , Theodore Lundquist , Rajesh Jain
IPC分类号： H01L21/302
CPC分类号： H01L21/3065 , H01J37/228 , H01J37/3056 , H01J2237/2482 , H01J2237/30466 , H01J2237/31749 , H01L22/12 , H01L22/26
摘要： An apparatus and method for processing an integrated circuit employing optical interference fringes. During processing, one or more wavelength lights are directed on the integrated circuit and based upon the detection of interference fringes and characteristics of the same, further processing may be controlled. One implementation involves charged particle beam processing of an integrated circuit as function of detection and/or characteristics of interference fringes. A charged particle beam trench milling operation is performed in or on the substrate of an integrated circuit. Light is directed on the floor of the trench. Interference fringes may be formed from the constructive or destructive interference between the light reflected from the floor and the light from the circuit structures. Resulting fringes will be a function, in part, of the thickness and/or profile of the trench floor. Milling may be controlled as a function of the detected fringe patterns.
摘要翻译：一种使用光学干涉条纹处理集成电路的装置和方法。在处理期间，一个或多个波长的光被引导到集成电路上，并且基于干涉条纹和其特性的检测，可以控制进一步的处理。一种实施方案涉及集成电路的带电粒子束处理，作为干涉条纹的检测和/或特征的函数。在集成电路的衬底中或其上执行带电粒子束沟槽铣削操作。光线指向沟槽的地板。干涉条纹可以由从地板反射的光与来自电路结构的光之间的建构性或破坏性干扰形成。所产生的条纹将部分地是沟槽地板的厚度和/或轮廓的函数。作为检测到的条纹图案的函数可以控制铣削。

3. 发明申请

US20060188797A1 Apparatus and method for optical interference fringe based integrated circuit processing 有权
标题翻译：用于光干涉条纹集成电路处理的装置和方法
公开(公告)号：US20060188797A1
公开(公告)日：2006-08-24
申请号：US11362240
申请日：2006-02-24
申请人： Erwan Roy , Chun-Cheng Tsao , Theodore Lundquist
发明人： Erwan Roy , Chun-Cheng Tsao , Theodore Lundquist
IPC分类号： G03C5/00 , A61N5/00 , G21G5/00
CPC分类号： H01J37/3174 , B23K26/03 , B23K26/032 , B82Y10/00 , B82Y40/00
摘要： An apparatus and method for processing an integrated circuit employing optical interference fringes. During processing, light is directed on the integrated circuit and based upon the detection of interference fringes, further processing may be controlled. One implementation involves charged particle beam processing of an integrated circuit as function of detection of interference fringes. A charged particle beam trench milling operation is performed in or on the substrate of an integrated circuit. Light is directed on the floor of the trench. When the floor approaches the underlying circuit structures, some light is reflected from the floor of the trench and some light penetrates the substrate and is reflected off the underlying circuit structures. Interference fringes may be formed from the constructive or destructive interference between the light reflected from the floor and the light from the circuit structures. Processing may be controlled as function of the detection of interference fringes.
摘要翻译：一种使用光学干涉条纹处理集成电路的装置和方法。在处理期间，光被引导到集成电路上，并且基于干涉条纹的检测，可以控制进一步的处理。一种实施方案涉及集成电路的带电粒子束处理作为干涉条纹检测的功能。在集成电路的衬底中或其上执行带电粒子束沟槽铣削操作。光照在沟槽的地板上。当地板接近下面的电路结构时，一些光从沟槽的底部反射，并且一些光穿透衬底并从下面的电路结构反射。干涉条纹可以由从地板反射的光与来自电路结构的光之间的建构性或破坏性干扰形成。作为检测干涉条纹的功能，可以控制处理。

4. 发明申请

US20050231219A1 Apparatus and method for detecting photon emissions from transistors 有权
公开(公告)号：US20050231219A1
公开(公告)日：2005-10-20
申请号：US11070968
申请日：2005-03-02
申请人： Romain Desplats , Philippe Perdu , Ketan Shah , Theodore Lundquist
发明人： Romain Desplats , Philippe Perdu , Ketan Shah , Theodore Lundquist
IPC分类号： G01R31/26 , G01R31/28 , G01R31/302 , G01R31/311
CPC分类号： G01R31/311 , G01R31/2621 , G01R31/2846
摘要： A system, apparatus, and method for analyzing photon emission data to discriminate between photons emitted by transistors and photons emitted by background sources. The analysis involves spatial and/or temporal correlation of photon emissions. After correlation, the analysis may further involve obtaining a likelihood that the correlated photons were emitted by a transistor. After correlation, the analysis may also further involve assigning a weight to individual photon emissions as a function of the correlation. The weight, in some instances, reflecting a likelihood that the photons were emitted by a transistor. The analysis may further involve automatically identifying transistors in a photon emission image.

5. 发明申请

US20090054392A1 NAPHTHYLPYRIMIDINE, NAPHTHYLPYRAZINE AND NAPHTHYLPYRIDAZINE ANALOGS AND THEIR USE AS AGONISTS OF THE WNT-BETA-CATENIN CELLULAR MESSAGING SYSTEM 审中-公开
标题翻译：萘二甲酰亚胺，萘甲酰胺和萘甲酰胺类似物及其作为WNT-BETA-CATENIN细胞消化系统的激素的用途
公开(公告)号：US20090054392A1
公开(公告)日：2009-02-26
申请号：US12194235
申请日：2008-08-19
申请人： Jeffrey Claude Pelletier , Luciana de Araujo Felix , Daniel Michael Green , Diane Barbara Hauze , Joseph Theodore Lundquist, IV , Charles William Mann , John Francis Mehlmann , John Francis Rogers, JR. , Matthew Douglas Vera , Albert John Molinari
发明人： Jeffrey Claude Pelletier , Luciana de Araujo Felix , Daniel Michael Green , Diane Barbara Hauze , Joseph Theodore Lundquist, IV , Charles William Mann , John Francis Mehlmann , John Francis Rogers, JR. , Matthew Douglas Vera , Albert John Molinari
IPC分类号： A61K31/397 , C07D239/24 , A61K31/505 , C07D243/08 , C07D413/14 , A61K31/496 , A61P19/08 , A61P25/28 , A61P35/00 , A61K31/5377 , A61K31/551 , C07D403/02 , A61K31/55
CPC分类号： C07D471/04 , C07D239/26 , C07D239/34 , C07D401/06 , C07D403/04 , C07D451/02 , C07D471/10 , C07D487/04 , C07D487/08
摘要： The present invention relates to naphthylpyrimidine analogs, methods of making naphthylpyrimidine analogs, compositions comprising a naphthylpyrimidine analog, and methods for treating canonical Wnt-β-catenin cellular messaging system-related disorders comprising administering to a subject in need thereof an effective amount of a naphthylpyrimidine, naphthylpyrazine and naphthylpyridazine analog.
摘要翻译：本发明涉及萘基嘧啶类似物，制备萘基嘧啶类似物的方法，包含萘基嘧啶类似物的组合物和用于治疗典型的Wnt-β-连环蛋白细胞消化系统相关病症的方法，其包括向有需要的受试者施用有效量的萘基嘧啶萘基吡嗪和萘基哒嗪类似物。

6. 发明申请

US20080028345A1 APPARATUS AND METHOD FOR INTEGRATED CIRCUIT DESIGN FOR CIRCUIT EDIT 审中-公开
标题翻译：用于电路编辑的集成电路设计的装置和方法
公开(公告)号：US20080028345A1
公开(公告)日：2008-01-31
申请号：US11869336
申请日：2007-10-09
申请人： Hitesh Suri , Tahir Malik , Theodore Lundquist
发明人： Hitesh Suri , Tahir Malik , Theodore Lundquist
IPC分类号： G06F17/50 , H01L29/00
CPC分类号： G06F17/5045
摘要： A method and apparatus for optimizing an integrated circuit design for post-fabrication circuit editing and diagnostics. The method and apparatus is specifically directed to adding designed-for-edit modifications and designed-for-diagnostics structures to an integrated circuit design for post-fabrication circuit editing with a charged-particle beam tool. An integrated circuit design may be modified to create efficient and reliable access to specified nodes and structures, such as spare gates, by the charged-particle beam tool during subsequent testing and debugging of the fabricated device. Additionally, structures such as spare gates, spare transistors, spare metal wires, and debug circuitry may be added to an integrated circuit design to provide for easier editing of portions of the design that may fail.
摘要翻译：一种用于优化后制造电路编辑和诊断的集成电路设计的方法和装置。该方法和装置特别涉及将设计的编辑修改和设计的诊断结构添加到用于利用带电粒子束工具的后制造电路编辑的集成电路设计。可以修改集成电路设计，以便在随后的制造的器件的测试和调试期间通过带电粒子束工具高效且可靠地访问指定的节点和结构，例如备用栅极。此外，诸如备用栅极，备用晶体管，备用金属线和调试电路的结构可以被添加到集成电路设计中，以便更容易地编辑可能失败的部分设计。

7. 发明申请

US20060079086A1 Apparatus and method of forming silicide in a localized manner 失效
标题翻译：以局部方式形成硅化物的装置和方法
公开(公告)号：US20060079086A1
公开(公告)日：2006-04-13
申请号：US10964157
申请日：2004-10-12
申请人： Christian Boit , Theodore Lundquist , Chun-Cheng Tsao , Uwe Kerst , Stephan Schoemann , Peter Sadewater
发明人： Christian Boit , Theodore Lundquist , Chun-Cheng Tsao , Uwe Kerst , Stephan Schoemann , Peter Sadewater
IPC分类号： H01L21/44 , H01L21/4763
CPC分类号： H01J37/228 , H01J37/3056 , H01J2237/2482 , H01J2237/31749 , H01L21/76892 , H01L21/76898
摘要： Localized trenches or access holes are milled in a semiconductor substrate to define access points to structures of an integrated circuit intended for circuit editing. A conductor is deposited, such as with a focused ion beam tool, in the access holes and a localized heat is applied to the conductor for silicide formation, especially at the boundary between a semiconductor structure, such as diffusion regions, and the deposited conductor. Localized heat may be generated at the target location through precise laser application, current generation through the target location, or a combination thereof.
摘要翻译：在半导体衬底中研磨局部沟槽或接入孔以限定用于电路编辑的集成电路的结构的接入点。导电体如聚焦离子束工具沉积在入口孔中，并且局部热被施加到用于硅化物形成的导体上，特别是在诸如扩散区域的半导体结构与沉积导体之间的边界处。可以通过精确的激光施加，通过目标位置的电流产生或其组合在目标位置产生局部化的热量。

8. 发明申请

US20060030064A1 Method and apparatus for addressing thickness variations of a trench floor formed in a semiconductor substrate 有权
标题翻译：用于解决在半导体衬底中形成的沟槽底板的厚度变化的方法和装置
公开(公告)号：US20060030064A1
公开(公告)日：2006-02-09
申请号：US11031423
申请日：2005-01-07
申请人： Erwan Roy , Patricia Coupanec , Theodore Lundquist , William Thompson , Mark Thompson , Lokesh Johri
发明人： Erwan Roy , Patricia Coupanec , Theodore Lundquist , William Thompson , Mark Thompson , Lokesh Johri
IPC分类号： H01L21/00
CPC分类号： H01L22/12
摘要： A method for utilizing interference fringe patterns generated when milling a trench through a semiconductor substrate by a method such as FIB milling, to determine and optimize the thickness uniformity of the trench bottom. The interference fringes may be mapped and the mapping used to direct the FIB milling to those regions which are thicker to correct observed non-uniformities in the trench floor thickness by varying the pixel dwell time across the milled area. The interference fringe mapping may be used to develop computerized contour lines to automate the pixel dwell time variations as described above, for correcting non-uniformities in the trench floor thickness. The method may be applied to applications other than trench formation for backside editing, such as monitoring progress in forming a milled object.
摘要翻译：一种利用通过诸如FIB铣削的方法在通过半导体衬底铣削沟槽时产生的干涉条纹图案的方法，以确定和优化沟槽底部的厚度均匀性。可以映射干涉条纹，并且映射用于将FIB铣削引导到那些较厚的区域，以通过改变铣削区域上的像素停留时间来修正沟槽底板厚度中观察到的不均匀性。如上所述，干涉条纹映射可用于开发计算机化轮廓线以自动化像素驻留时间变化，以校正沟槽底板厚度中的不均匀性。该方法可以应用于除了用于背面编辑的沟槽形成之外的应用，例如监测形成铣削对象的进展情况。

9. 发明申请

US20050109956A1 Precise, in-situ endpoint detection for charged particle beam processing 审中-公开
标题翻译：用于带电粒子束处理的精确的原位端点检测
公开(公告)号：US20050109956A1
公开(公告)日：2005-05-26
申请号：US10984096
申请日：2004-11-09
申请人： Theodore Lundquist , Kenneth Wilsher
发明人： Theodore Lundquist , Kenneth Wilsher
IPC分类号： H01J37/304 , H01J37/305 , H01J27/00
CPC分类号： H01J37/304 , H01J37/3056
摘要： A system and method for determining precisely in-situ the endpoint of halogen-assisted charged particle beam milling of a hole or trench in the backside of the substrate of a flipchip packaged IC. The backside of the IC is mechanically thinned. Optionally, a coarse trench is then milled in the thinned backside of the IC using either laser chemical etching or halogen-assisted charged particle beam milling. A further small trench is milled using a halogen-assisted charged-particle beam (electron or ion beam). The endpoint for milling this small trench is determined precisely by monitoring the power supply leakage current of the IC induced by electron-hole pairs created by the milling process. A precise in-situ endpoint detection signal is generated by modulating the beam at a reference frequency and then amplifying that frequency component in the power supply leakage current with an amplifier, narrow-band amplifier or lock-in amplifier. The precise, in-situ, endpoint signal is processed and displayed for manual or automatic precise in-situ endpoint detection. This approach avoids or minimizes unintentional damage or perturbation of the active diffusion regions in the IC. A range of further operations on the IC can then be performed.
摘要翻译：用于准确地确定倒装芯片封装IC的衬底的背面中的空穴或沟槽的卤素辅助带电粒子束铣削的终点的系统和方法。 IC的背面机械变薄。可选地，使用激光化学蚀刻或卤素辅助带电粒子束研磨，在IC的薄化背面中研磨粗沟槽。使用卤素辅助带电粒子束（电子或离子束）研磨另外的小沟槽。通过监测由铣削过程产生的电子 - 空穴对引起的IC的电源漏电流，精确地确定了用于铣削该小沟槽的端点。通过以参考频率调制光束然后用放大器，窄带放大器或锁定放大器放大该电源漏电流中的该频率分量来产生精确的原位端点检测信号。精确的原位端点信号被处理和显示用于手动或自动精确的原位端点检测。该方法避免或最小化IC中的有源扩散区域的无意的损坏或扰动。然后可以执行IC上的一系列进一步的操作。

10. 发明申请

US20090131409A1 1,4,5,6,7,8-HEXAHYDRO -PYRROLO[2,3-d]AZEPINES AND -IMIDAZO[4,5-d]AZEPINES AS MODULATORS OF NUCLEAR RECEPTOR ACTIVITY 审中-公开
标题翻译： 1,4,5,6,7,8-十六氢嘧啶 - 吡咯并[2,3-d]亚氨基和咪唑并[4,5-d]亚胺作为核受体活性的调节剂
公开(公告)号：US20090131409A1
公开(公告)日：2009-05-21
申请号：US12255232
申请日：2008-10-21
申请人： John Francis Mehlmann , Joseph Theodore Lundquist, IV , Paige Erin Mahaney , Matthew Lantz Crawley , Callain Younghee Kim
发明人： John Francis Mehlmann , Joseph Theodore Lundquist, IV , Paige Erin Mahaney , Matthew Lantz Crawley , Callain Younghee Kim
IPC分类号： A61K31/55 , C07D487/04 , A61P3/00 , A61P9/00 , A61P25/00 , A61P35/00
CPC分类号： C07D487/04
摘要： Disclosed are chemical entities including compounds of Formula I and pharmaceutically acceptable salts thereof, wherein X is chosen from CN, CF3, CF2H, S(O)nR6, and S(O)2N(R9)R10; Y is chosen from CR11 and N; Z is chosen from O and NH; R3 is chosen from —C(O)R12 and —C(O)N(R9)R10; and n, R1, R2 and R4-R12 are defined herein; compositions comprising one or more such chemical entities; and methods of using one or more such chemical entities for modulating the activity of certain receptors (e.g., farnesoid X) or for the treatment or prevention of one or more symptoms of disease or disorder related to the activity of those receptors.
摘要翻译：公开了包括式I化合物及其药学上可接受的盐的化学实体，其中X选自CN，CF 3，CF 2 H，S（O）n R 6和S（O）2 N（R 9）R 10; Y选自CR11和N; Z选自O和NH; R 3选自-C（O）R 12和-C（O）N（R 9）R 10; 且n，R 1，R 2和R 4 -R 12在本文中定义; 包含一种或多种这样的化学实体的组合物; 以及使用一种或多种这样的化学实体调节某些受体（例如法尼斯X）的活性或用于治疗或预防与这些受体的活性相关的一种或多种疾病或病症症状的方法。

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