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1. 发明授权

US07884024B2 Apparatus and method for optical interference fringe based integrated circuit processing 有权
标题翻译：用于光干涉条纹集成电路处理的装置和方法
公开(公告)号：US07884024B2
公开(公告)日：2011-02-08
申请号：US11754466
申请日：2007-05-29
申请人： Erwan Le Roy , Chun-Cheng Tsao , Theodore R. Lundquist , Rajesh Kumar Jain
发明人： Erwan Le Roy , Chun-Cheng Tsao , Theodore R. Lundquist , Rajesh Kumar Jain
IPC分类号： H01L21/302
CPC分类号： H01L21/3065 , H01J37/228 , H01J37/3056 , H01J2237/2482 , H01J2237/30466 , H01J2237/31749 , H01L22/12 , H01L22/26
摘要： An apparatus and method for processing an integrated circuit employing optical interference fringes. During processing, one or more wavelength lights are directed on the integrated circuit and based upon the detection of interference fringes and characteristics of the same, further processing may be controlled. One implementation involves charged particle beam processing of an integrated circuit as function of detection and/or characteristics of interference fringes. A charged particle beam trench milling operation is performed in or on the substrate of an integrated circuit. Light is directed on the floor of the trench. Interference fringes may be formed from the constructive or destructive interference between the light reflected from the floor and the light from the circuit structures. Resulting fringes will be a function, in part, of the thickness and/or profile of the trench floor. Milling may be controlled as a function of the detected fringe patterns.
摘要翻译：一种使用光学干涉条纹处理集成电路的装置和方法。在处理期间，一个或多个波长的光被引导到集成电路上，并且基于干涉条纹和其特性的检测，可以控制进一步的处理。一种实施方案涉及集成电路的带电粒子束处理，作为干涉条纹的检测和/或特征的函数。在集成电路的衬底中或其上执行带电粒子束沟槽铣削操作。光线指向沟槽的地板。干涉条纹可以由从地板反射的光与来自电路结构的光之间的建构性或破坏性干扰形成。所产生的条纹将部分地是沟槽地板的厚度和/或轮廓的函数。作为检测到的条纹图案的函数可以控制铣削。

2. 发明授权

US07697146B2 Apparatus and method for optical interference fringe based integrated circuit processing 有权
标题翻译：用于光干涉条纹集成电路处理的装置和方法
公开(公告)号：US07697146B2
公开(公告)日：2010-04-13
申请号：US11362240
申请日：2006-02-24
申请人： Erwan Le Roy , Chun-Cheng Tsao , Theodore R. Lundquist
发明人： Erwan Le Roy , Chun-Cheng Tsao , Theodore R. Lundquist
IPC分类号： G01B11/02
CPC分类号： H01J37/3174 , B23K26/03 , B23K26/032 , B82Y10/00 , B82Y40/00
摘要： An apparatus and method for processing an integrated circuit employing optical interference fringes. During processing, light is directed on the integrated circuit and based upon the detection of interference fringes, further processing may be controlled. One implementation involves charged particle beam processing of an integrated circuit as function of detection of interference fringes. A charged particle beam trench milling operation is performed in or on the substrate of an integrated circuit. Light is directed on the floor of the trench. When the floor approaches the underlying circuit structures, some light is reflected from the floor of the trench and some light penetrates the substrate and is reflected off the underlying circuit structures. Interference fringes may be formed from the constructive or destructive interference between the light reflected from the floor and the light from the circuit structures. Processing may be controlled as function of the detection of interference fringes.
摘要翻译：一种使用光学干涉条纹处理集成电路的装置和方法。在处理期间，光被引导到集成电路上，并且基于干涉条纹的检测，可以控制进一步的处理。一种实施方案涉及集成电路的带电粒子束处理作为干涉条纹检测的功能。在集成电路的衬底中或其上执行带电粒子束沟槽铣削操作。光照在沟槽的地板上。当地板接近下面的电路结构时，一些光从沟槽的底部反射，并且一些光穿透衬底并从下面的电路结构反射。干涉条纹可以由从地板反射的光与来自电路结构的光之间的建构性或破坏性干扰形成。作为检测干涉条纹的功能，可以控制处理。

3. 发明授权

US07439168B2 Apparatus and method of forming silicide in a localized manner 失效
标题翻译：以局部方式形成硅化物的装置和方法
公开(公告)号：US07439168B2
公开(公告)日：2008-10-21
申请号：US10964157
申请日：2004-10-12
申请人： Christian Boit , Theodore R. Lundquist , Chun-Cheng Tsao , Uwe Jürgen Kerst , Stephan Schoemann , Peter Sadewater
发明人： Christian Boit , Theodore R. Lundquist , Chun-Cheng Tsao , Uwe Jürgen Kerst , Stephan Schoemann , Peter Sadewater
IPC分类号： H01L21/4763 , H01L21/3205
CPC分类号： H01J37/228 , H01J37/3056 , H01J2237/2482 , H01J2237/31749 , H01L21/76892 , H01L21/76898
摘要： Localized trenches or access holes are milled in a semiconductor substrate to define access points to structures of an integrated circuit intended for circuit editing. A conductor is deposited, such as with a focused ion beam tool, in the access holes and a localized heat is applied to the conductor for silicide formation, especially at the boundary between a semiconductor structure, such as diffusion regions, and the deposited conductor. Localized heat may be generated at the target location through precise laser application, current generation through the target location, or a combination thereof.
摘要翻译：在半导体衬底中研磨局部沟槽或接入孔以限定用于电路编辑的集成电路的结构的接入点。导电体如聚焦离子束工具沉积在入口孔中，并且局部热被施加到用于硅化物形成的导体上，特别是在诸如扩散区域的半导体结构与沉积导体之间的边界处。可以通过精确的激光施加，通过目标位置的电流产生或其组合在目标位置产生局部化的热量。

4. 发明申请

US20060076503A1 Optical coupling apparatus for a dual column charged particle beam tool for imaging and forming silicide in a localized manner 有权
公开(公告)号：US20060076503A1
公开(公告)日：2006-04-13
申请号：US11222932
申请日：2005-09-08
申请人： Chun-Cheng Tsao
发明人： Chun-Cheng Tsao
IPC分类号： H01J3/14 , G21K5/10 , G01K1/08 , A61N5/00
CPC分类号： H01J37/3056 , H01J37/228 , H01J2237/2482 , H01J2237/31749 , H01L21/76892 , H01L21/76898
摘要： An optical coupling apparatus for a dual column charged particle beam tool allowing both optical imaging of an area of an integrated circuit, as well as localized heating of the integrated circuit to form silicide. In one embodiment, optical paths from a whitelight source and a laser source are coupled together by way of first and second beam splitters so that a single optical port of the dual column tool may be utilized for both imaging and heating. In another embodiment, a single laser source is employed to provide both illumination for standard microscopy-type imaging, as well as localized heating. In a third embodiment, a single laser source provides heating along with localized illumination for confocal scanning microscopy-type imaging.

5. 发明授权

US06955930B2 Method for determining thickness of a semiconductor substrate at the floor of a trench 失效
标题翻译：确定沟槽底部的半导体衬底的厚度的方法
公开(公告)号：US06955930B2
公开(公告)日：2005-10-18
申请号：US10161272
申请日：2002-05-30
申请人： Erwan Le Roy , Chun-Cheng Tsao
发明人： Erwan Le Roy , Chun-Cheng Tsao
IPC分类号： H01J37/30 , H01J37/305 , H01L21/3065 , H01L21/66
CPC分类号： H01J37/3005 , H01J37/3056 , H01J2237/30466 , H01L21/3065
摘要： Apparatus and method for exposing a selected feature of an integrated circuit device such as a selected portion of the metallization layer, from the backside of the integrated circuit substrate without disturbing adjacent features of the device such as the active semiconductor regions. This is performed using an FIB (focused ion beam) etching process in conjunction with observation by an optical microscope to form a trench through the substrate. The process includes a precise optical endpointing technique to monitor the remaining thickness of the semiconductor substrate at the floor of the trench. It is important to terminate etching of the trench so that the trench floor extends as close to the active semiconductor structures as desired and yet is not detrimental to device operation. This is done without introducing a need for any additional tool. This is carried out using an infra-red optical technique which observes the interference fringes generated by the reflections from the silicon substrate surface and from semiconductor device circuitry layers to quantify the remaining semiconductor substrate thickness in the trench.
摘要翻译：用于从集成电路衬底的背面暴露诸如金属化层的选定部分的集成电路器件的选定特征的装置和方法，而不干扰诸如有源半导体区域的器件的相邻特征。这是通过FIB（聚焦离子束）蚀刻工艺结合光学显微镜的观察来进行的，以通过衬底形成沟槽。该方法包括精确的光学终点技术，以监测沟槽底部的半导体衬底的剩余厚度。重要的是终止沟槽的蚀刻，使得沟槽底板根据需要延伸到接近有源半导体结构，并且不会对器件操作产生不利影响。这不需要任何额外的工具就可以完成。这使用红外光学技术进行，该技术观察由硅衬底表面和半导体器件电路层的反射产生的干涉条纹，以量化沟槽中剩余的半导体衬底厚度。

6. 发明授权

US06872581B2 Measuring back-side voltage of an integrated circuit 有权
标题翻译：测量集成电路的背面电压
公开(公告)号：US06872581B2
公开(公告)日：2005-03-29
申请号：US10123842
申请日：2002-04-15
申请人： Christopher Shaw , Chun-Cheng Tsao , Theodore R. Lundquist
发明人： Christopher Shaw , Chun-Cheng Tsao , Theodore R. Lundquist
IPC分类号： G01R31/302 , G01R31/311 , H01L21/66 , H01L21/00
CPC分类号： G01R31/311 , H01L22/14 , H01L2224/13 , H01L2924/00014 , H01L2924/014 , H01L2924/1305 , H01L2924/00 , H01L2224/0401
摘要： Methods for integrated circuit diagnosis, characterization or modification using a charged particle beam. In one implementation, the bulk silicon substrate of an integrated circuit is thinned to about 1 to 3 μm from the deepest well, a voltage is applied to a circuit element that is beneath the outer surface of the thinned substrate. The applied voltage induces an electrical potential on the outer surface, which is detected as a surface feature on the outer surface by its interaction with the charged particle beam.
摘要翻译：使用带电粒子束进行集成电路诊断，表征或修改的方法。在一个实施方案中，将集成电路的体硅衬底从最深的孔减薄到约1至3μm，将电压施加到在薄化衬底的外表面下方的电路元件。所施加的电压在外表面上引起电位，其通过与带电粒子束的相互作用被检测为外表面上的表面特征。

7. 发明授权

US07245133B2 Integration of photon emission microscope and focused ion beam 失效
标题翻译：光子发射显微镜和聚焦离子束的集成
公开(公告)号：US07245133B2
公开(公告)日：2007-07-17
申请号：US10985808
申请日：2004-11-09
申请人： Chun-Cheng Tsao , Eugene Delenia
发明人： Chun-Cheng Tsao , Eugene Delenia
IPC分类号： G01R31/302 , G01L21/30
CPC分类号： G01R31/302
摘要： An integrated FIB/PEM apparatus and method for performing failure analysis on integrated circuits. In-situ failure analysis is enabled by integrating Photon Emission Microscopy into a Focused Ion Beam system, thereby improving throughput and efficiency of Failure Analysis. An iterative method is described for identifying and localizing fault sites on the circuit.
摘要翻译：用于对集成电路执行故障分析的集成FIB / PEM装置和方法。通过将光子发射显微镜集成到聚焦离子束系统中来实现原位故障分析，从而提高故障分析的吞吐量和效率。描述了用于识别和定位电路上的故障位置的迭代方法。

8. 发明授权

US08173948B2 Optical coupling apparatus for a dual column charged particle beam tool for imaging and forming silicide in a localized manner 有权
标题翻译：一种用于以局部方式成像和形成硅化物的双柱带电粒子束工具的光耦合装置
公开(公告)号：US08173948B2
公开(公告)日：2012-05-08
申请号：US12582553
申请日：2009-10-20
申请人： Chun-Cheng Tsao
发明人： Chun-Cheng Tsao
IPC分类号： G01J1/42
CPC分类号： H01J37/3056 , H01J37/228 , H01J2237/2482 , H01J2237/31749 , H01L21/76892 , H01L21/76898
摘要： An optical coupling apparatus for a dual column charged particle beam tool allowing both optical imaging of an area of an integrated circuit, as well as localized heating of the integrated circuit to form silicide. In one embodiment, optical paths from a whitelight source and a laser source are coupled together by way of first and second beam splitters so that a single optical port of the dual column tool may be utilized for both imaging and heating. In another embodiment, a single laser source is employed to provide both illumination for standard microscopy-type imaging, as well as localized heating. In a third embodiment, a single laser source provides heating along with localized illumination for confocal scanning microscopy-type imaging.
摘要翻译：一种用于双列带电粒子束工具的光耦合装置，其允许集成电路的区域的光学成像，以及集成电路的局部加热以形成硅化物。在一个实施例中，来自白光源和激光源的光路通过第一和第二分束器耦合在一起，使得双列工具的单个光学端口可以用于成像和加热。在另一个实施例中，使用单个激光源来为标准显微镜型成像以及局部加热提供照明。在第三实施例中，单个激光源与局部照明一起提供加热以用于共焦扫描显微镜型成像。

9. 发明申请

US20100038555A1 OPTICAL COUPLING APPARATUS FOR A DUAL COLUMN CHARGED PARTICLE BEAM TOOL FOR IMAGING AND FORMING SILICIDE IN A LOCALIZED MANNER 有权
标题翻译：用于在本地化的管理器中成像和形成硅化物的双列充电颗粒光束工具的光学耦合装置
公开(公告)号：US20100038555A1
公开(公告)日：2010-02-18
申请号：US12582553
申请日：2009-10-20
申请人： Chun-Cheng TSAO
发明人： Chun-Cheng TSAO
IPC分类号： H01J3/14
CPC分类号： H01J37/3056 , H01J37/228 , H01J2237/2482 , H01J2237/31749 , H01L21/76892 , H01L21/76898
摘要： An optical coupling apparatus for a dual column charged particle beam tool allowing both optical imaging of an area of an integrated circuit, as well as localized heating of the integrated circuit to form silicide. In one embodiment, optical paths from a whitelight source and a laser source are coupled together by way of first and second beam splitters so that a single optical port of the dual column tool may be utilized for both imaging and heating. In another embodiment, a single laser source is employed to provide both illumination for standard microscopy-type imaging, as well as localized heating. In a third embodiment, a single laser source provides heating along with localized illumination for confocal scanning microscopy-type imaging.
摘要翻译：一种用于双列带电粒子束工具的光耦合装置，其允许集成电路的区域的光学成像，以及集成电路的局部加热以形成硅化物。在一个实施例中，来自白光源和激光源的光路通过第一和第二分束器耦合在一起，使得双列工具的单个光学端口可以用于成像和加热。在另一个实施例中，使用单个激光源来为标准显微镜型成像以及局部加热提供照明。在第三实施例中，单个激光源与局部照明一起提供加热以用于共焦扫描显微镜型成像。

10. 发明授权

US07612321B2 Optical coupling apparatus for a dual column charged particle beam tool for imaging and forming silicide in a localized manner 有权
标题翻译：一种双柱带电粒子束工具的光耦合装置，用于以局部方式成像和形成硅化物
公开(公告)号：US07612321B2
公开(公告)日：2009-11-03
申请号：US11222932
申请日：2005-09-08
申请人： Chun-Cheng Tsao
发明人： Chun-Cheng Tsao
IPC分类号： G01J1/42
CPC分类号： H01J37/3056 , H01J37/228 , H01J2237/2482 , H01J2237/31749 , H01L21/76892 , H01L21/76898
摘要： An optical coupling apparatus for a dual column charged particle beam tool allowing both optical imaging of an area of an integrated circuit, as well as localized heating of the integrated circuit to form silicide. In one embodiment, optical paths from a whitelight source and a laser source are coupled together by way of first and second beam splitters so that a single optical port of the dual column tool may be utilized for both imaging and heating. In another embodiment, a single laser source is employed to provide both illumination for standard microscopy-type imaging, as well as localized heating. In a third embodiment, a single laser source provides heating along with localized illumination for confocal scanning microscopy-type imaging.
摘要翻译：一种用于双列带电粒子束工具的光耦合装置，其允许集成电路的区域的光学成像，以及集成电路的局部加热以形成硅化物。在一个实施例中，来自白光源和激光源的光路通过第一和第二分束器耦合在一起，使得双列工具的单个光学端口可以用于成像和加热。在另一个实施例中，使用单个激光源来为标准显微镜型成像以及局部加热提供照明。在第三实施例中，单个激光源与局部照明一起提供加热以用于共焦扫描显微镜型成像。

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