专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20140210983A1 OPTICAL MICROSCOPE DEVICE AND TESTING APPARATUS COMPRISING SAME 有权
标题翻译：光学显微镜装置和包含其的测试装置
公开(公告)号：US20140210983A1
公开(公告)日：2014-07-31
申请号：US14240323
申请日：2012-07-19
申请人： Kei Shimura , Tetsuya Niibori , Mizuki Oku , Naoya Nakai
发明人： Kei Shimura , Tetsuya Niibori , Mizuki Oku , Naoya Nakai
IPC分类号： G02B21/36 , G02B21/06
CPC分类号： G02B21/361 , G01N23/2206 , G02B21/0016 , G02B21/06 , G02B21/10 , G02B21/365
摘要： The present invention allows observation or capturing of a high-contrast image of a sample for which sufficient contrast cannot be obtained in bright-field observation, such as a wafer having a pattern with a small pattern height. According to the present invention, a sample is illuminated through an objective lens used for capturing an image, and an imaging optics are provided with an aperture filter so that an image is captured while light of bright-field observation components is significantly attenuated.
摘要翻译：本发明允许在诸如具有小图案高度的图案的晶片的明视场观察中不能获得足够对比度的样品的高对比度图像的观察或捕获。根据本发明，通过用于拍摄图像的物镜照射样品，并且成像光学器件设置有孔径滤光器，使得在明视野观察成分的光被显着衰减的同时拍摄图像。

2. 发明申请

US20130284924A1 CHARGED PARTICLE BEAM APPARATUS 审中-公开
标题翻译：充电颗粒光束装置
公开(公告)号：US20130284924A1
公开(公告)日：2013-10-31
申请号：US13997941
申请日：2011-11-09
申请人： Masaki Mizuochi , Tetsuya Niibori
发明人： Masaki Mizuochi , Tetsuya Niibori
IPC分类号： G01N23/22
CPC分类号： G01N23/2206 , H01J37/20 , H01J37/21 , H01J37/28 , H01J2237/216 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： There is provided an apparatus which can accurately carry out focusing of an optical microscope mounted on a charged particle beam apparatus while restraining an increase in an apparatus cost and a reduction in a throughput. An approximate polynomial is formed based on a focus map of the optical microscope which is previously measured, and a control amount which adds a difference between a piece of wafer height information at that occasion and a piece of wafer height information in actual observation to the approximate polynomial is inputted as a focus control value of the optical microscope.
摘要翻译：提供了一种能够在抑制装置成本增加和生产量降低的同时，准确地进行安装在带电粒子束装置上的光学显微镜的聚焦的装置。基于预先测量的光学显微镜的焦点图形成近似多项式，并且将在该场合的一片晶片高度信息与实际观测中的晶片高度信息之间的差加上近似值的控制量输入多项式作为光学显微镜的聚焦控制值。

3. 发明授权

US09851548B2 Optical microscope device and testing apparatus comprising same 有权
公开(公告)号：US09851548B2
公开(公告)日：2017-12-26
申请号：US14240323
申请日：2012-07-19
申请人： Kei Shimura , Tetsuya Niibori , Mizuki Oku , Naoya Nakai
发明人： Kei Shimura , Tetsuya Niibori , Mizuki Oku , Naoya Nakai
IPC分类号： H04N7/18 , G02B21/36 , G02B21/00 , G02B21/10 , G02B21/06 , G01N23/22
CPC分类号： G02B21/361 , G01N23/2206 , G02B21/0016 , G02B21/06 , G02B21/10 , G02B21/365
摘要： The present invention allows observation or capturing of a high-contrast image of a sample for which sufficient contrast cannot be obtained in bright-field observation, such as a wafer having a pattern with a small pattern height. According to the present invention, a sample is illuminated through an objective lens used for capturing an image, and an imaging optics are provided with an aperture filter so that an image is captured while light of bright-field observation components is significantly attenuated.

4. 发明申请

US20140084159A1 SCANNING ELECTRON MICROSCOPE AND METHOD FOR PREPARING SPECIMEN 审中-公开
标题翻译：扫描电子显微镜及其制备方法
公开(公告)号：US20140084159A1
公开(公告)日：2014-03-27
申请号：US14116697
申请日：2012-03-14
申请人： Kaori Yaeshima , Satoshi Takada , Fumiaki Endo , Tetsuya Niibori
发明人： Kaori Yaeshima , Satoshi Takada , Fumiaki Endo , Tetsuya Niibori
IPC分类号： H01J37/28 , G01N23/225
CPC分类号： H01J37/28 , G01N23/2251 , H01J2237/2817 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： In related art, when a location to be analyzed is selected from inspection data, a relatively highly critical defect among entire defects is not selected as a defect to be analyzed. Further, when a mark is placed in a fixed position associated with a defect, the mark affects the defect itself depending on the shape and size of the defect, which is problematic in the following analysis made in an analysis apparatus. Moreover, in the case of a wafer with no pattern, a defect invisible to a SEM cannot be marked.To select a highly critical defect as a defect to be analyzed, an automatic classification result from a review SEM is used to select a defect to be analyzed. Further, to avoid an effect on a defect itself, a mark is placed in a position associated with the defect with the distance from the defect to the marking position changed on a defect basis. To this end, the shape and size of a defect is recognized based on ADR or ADC, and a mark is placed in a position set apart from the defect by a distance in consideration of a range to be affected by the mark. Further, in the case of a defect that is not observable with a SEM, a mark is placed by using an observation result from an optical microscope.
摘要翻译：在相关技术中，当从检查数据中选择待分析的位置时，不会选择整个缺陷中相当高度关键的缺陷作为要分析的缺陷。此外，当标记被放置在与缺陷相关联的固定位置时，标记根据缺陷的形状和尺寸影响缺陷本身，这在分析装置中进行的以下分析中是有问题的。此外，在没有图案的晶片的情况下，不能对SEM不可见的缺陷进行标记。为了选择非常关键的缺陷作为要分析的缺陷，使用复查SEM的自动分类结果来选择要分析的缺陷。此外，为了避免对缺陷本身的影响，将标记放置在与缺陷相关联的位置中，从缺陷到标记位置的距离在缺陷的基础上改变。为此，基于ADR或ADC识别缺陷的形状和尺寸，并且考虑到受标记影响的范围，将标记放置在与缺陷相距一定距离的位置。此外，在通过SEM不能观察到的缺陷的情况下，通过使用光学显微镜的观察结果来放置标记。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式