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    • 4. 发明授权
    • Thermal image transfer recording method and thermal image transfer
recording medium
    • 热图像转印记录方法和热图像转印记录介质
    • US6129984A
    • 2000-10-10
    • US335534
    • 1999-06-18
    • Yoji IdeTetsuji KunitakeMihoko MatsumotoYasumitsu Kuga
    • Yoji IdeTetsuji KunitakeMihoko MatsumotoYasumitsu Kuga
    • B32B9/04B41J2/315B41J2/32B41M5/00B41M5/382B41M5/40B41M5/42B41M5/44B41M5/52G01D15/10
    • B41M5/38207B41M5/38221B41M5/426B41M5/44B41M5/52Y10S428/913Y10S428/914
    • A thermal image transfer recording method includes the steps of holding a thermal image transfer recording medium including a support material and a thermal image transfer layer provided on the support material, and an image recording material between a line edge thermal head and a platen roller, with a contact pressure being applied therebetween; transferring the thermal image transfer recording layer imagewise from the thermal image transfer recording medium to the image recording material with imagewise application of heat by use of the line edge thermal head; and taking up the thermal image transfer recording medium after the image transfer, with the take-up tension applied to the thermal image transfer recording medium being set larger than both the shearing strength and peeling strength at 70.degree. C. of the thermal image transfer layer. A thermal image transfer recording medium including a thermal image transfer layer with a shearing strength of 200 g/cm or more at 25.degree. C. provided on a support material is provided for use in this thermal image transfer recording method.
    • 热图像转印记录方法包括以下步骤:保持包括支撑材料和设置在支撑材料上的热图像转印层的热图像转印记录介质,以及在线边热敏头和压纸辊之间的图像记录材料, 在它们之间施加接触压力; 通过使用线边热敏头成像地施加热量,将热图像转印记录层从热图像转印记录介质转印到图像记录材料; 并且在图像转印之后吸收热图像转印记录介质,其中施加到热图像转印记录介质的卷取张力被设定为大于热图像转印层的70℃的剪切强度和剥离强度两者 。 提供了一种包含设置在支撑材料上的在25℃下具有200g / cm 2以上的剪切强度的热转印层的热图像转印记录介质,用于该热图像转印记录方法。
    • 9. 发明授权
    • Non-volatile semiconductor memory device
    • 非易失性半导体存储器件
    • US08760908B2
    • 2014-06-24
    • US13235431
    • 2011-09-18
    • Tetsuji KunitakeKenichi Murooka
    • Tetsuji KunitakeKenichi Murooka
    • G11C11/00
    • G11C13/0004G11C8/08G11C8/14G11C13/0007G11C13/0011G11C13/0023G11C13/0069G11C2013/0076G11C2213/71
    • A nonvolatile semiconductor memory device includes: a memory cell array which has a plurality of first lines, a plurality of second lines intersecting the plurality of first lines and a plurality of memory cells which store an electrically rewritable resistance value as data in a non-volatile manner; a first decoder which is connected to one ends of the plurality of first lines and selects the first lines; a second decoder which is connected to the plurality of second lines and selects the second lines; and a voltage applying circuit which is connected to one of the first and second decoders and which applies a predetermined voltage between the first and second lines selected by the first and second decoders. The second decoder sequentially selects the second lines in a direction from the other ends to the one ends of the first lines.
    • 非易失性半导体存储器件包括:存储单元阵列,其具有多个第一线,与多条第一线相交的多条第二线,以及存储电可重写电阻值作为非易失性数据的多个存储单元 方式; 第一解码器,其连接到所述多个第一线的一端并选择所述第一线; 第二解码器,连接到所述多个第二线并选择所述第二线; 以及电压施加电路,其连接到第一和第二解码器中的一个,并且在由第一和第二解码器选择的第一和第二线之间施加预定电压。 第二解码器从第一行的另一端到一端的方向依次选择第二行。