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1. 发明授权

US08576606B2 Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US08576606B2
公开(公告)日：2013-11-05
申请号：US13052214
申请日：2011-03-21
申请人： Tetsuji Kunitake , Takashi Shigeoka , Takayuki Tsukamoto , Hironori Wakai , Hisashi Kato
发明人： Tetsuji Kunitake , Takashi Shigeoka , Takayuki Tsukamoto , Hironori Wakai , Hisashi Kato
IPC分类号： G11C11/00
CPC分类号： H01L27/24 , G11C8/08 , G11C13/0007 , G11C13/0023 , G11C13/0064 , G11C13/0069 , G11C2013/0083 , H01L27/1021
摘要： A nonvolatile semiconductor memory device according to an embodiment herein includes a memory cell array. The memory cell array includes memory cells each provided between a first line and a second line and each including a variable resistor. A control circuit applies through the first and second lines a voltage necessary for a forming operation of the memory cell. A current limiting circuit limits a value of a current flowing across the memory cell during the forming operation to a certain limit value. The control circuit repeats an operation of applying the voltage by setting the limit value to a certain value and an operation of changing the limit value from the certain value, until forming of the memory cell is achieved.
摘要翻译：根据本文实施例的非易失性半导体存储器件包括存储单元阵列。存储单元阵列包括各自设置在第一线路和第二线路之间并且各自包括可变电阻器的存储器单元。控制电路通过第一和第二行施加存储单元的形成操作所需的电压。电流限制电路将在成形操作期间流过存储器单元的电流的值限制到某一极限值。控制电路重复通过将极限值设定为一定值来施加电压的操作和从该特定值改变极限值的操作，直到实现存储单元的形成。

2. 发明授权

US5258234A Thermal image transfer recording medium 失效
公开(公告)号：US5258234A
公开(公告)日：1993-11-02
申请号：US849178
申请日：1992-03-10
申请人： Youji Ide , Tetsuji Kunitake , Naoshi Yamamoto
发明人： Youji Ide , Tetsuji Kunitake , Naoshi Yamamoto
IPC分类号： B32B9/00
CPC分类号： B32B9/00 , Y10S428/913 , Y10S428/914 , Y10T428/24901
摘要： A thermal image transfer recording medium is disclosed, which comprises a substrate and an ink layer formed thereon comprising as the main components (i) a coloring agent and (ii) a copolymer consisting of at least a monomer selected from Group A consisting of acrylonitrile and methacrylonitrile and at least a monomer selected from Group B consisting of monomers represented by the following formula (I); ##STR1## wherein R.sup.1 represents hydrogen or a methyl group; and R.sup.2 represents hydrogen, a straight-chain or branched alkyl group having 1 to 4 carbon atoms, a glycidyl group, or a hydroxyalkyl group having 2 to 4 carbon atoms.

3. 发明申请

US20110235401A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US20110235401A1
公开(公告)日：2011-09-29
申请号：US13052214
申请日：2011-03-21
申请人： Tetsuji KUNITAKE , Takashi Shigeoka , Takayuki Tsukamoto , Hironori Wakai , Hisashi Kato
发明人： Tetsuji KUNITAKE , Takashi Shigeoka , Takayuki Tsukamoto , Hironori Wakai , Hisashi Kato
IPC分类号： G11C11/00 , H05K13/00
CPC分类号： H01L27/24 , G11C8/08 , G11C13/0007 , G11C13/0023 , G11C13/0064 , G11C13/0069 , G11C2013/0083 , H01L27/1021
摘要： A nonvolatile semiconductor memory device according to an embodiment herein includes a memory cell array. The memory cell array includes memory cells each provided between a first line and a second line and each including a variable resistor. A control circuit applies through the first and second lines a voltage necessary for a forming operation of the memory cell. A current limiting circuit limits a value of a current flowing across the memory cell during the forming operation to a certain limit value. The control circuit repeats an operation of applying the voltage by setting the limit value to a certain value and an operation of changing the limit value from the certain value, until forming of the memory cell is achieved.
摘要翻译：根据本文实施例的非易失性半导体存储器件包括存储单元阵列。存储单元阵列包括各自设置在第一线路和第二线路之间并且各自包括可变电阻器的存储器单元。控制电路通过第一和第二行施加存储单元的形成操作所需的电压。电流限制电路将在成形操作期间流过存储器单元的电流的值限制到某一极限值。控制电路重复通过将极限值设定为一定值来施加电压的操作和从该特定值改变极限值的操作，直到实现存储单元的形成。

4. 发明授权

US6129984A Thermal image transfer recording method and thermal image transfer recording medium 有权
标题翻译：热图像转印记录方法和热图像转印记录介质
公开(公告)号：US6129984A
公开(公告)日：2000-10-10
申请号：US335534
申请日：1999-06-18
申请人： Yoji Ide , Tetsuji Kunitake , Mihoko Matsumoto , Yasumitsu Kuga
发明人： Yoji Ide , Tetsuji Kunitake , Mihoko Matsumoto , Yasumitsu Kuga
IPC分类号： B32B9/04 , B41J2/315 , B41J2/32 , B41M5/00 , B41M5/382 , B41M5/40 , B41M5/42 , B41M5/44 , B41M5/52 , G01D15/10
CPC分类号： B41M5/38207 , B41M5/38221 , B41M5/426 , B41M5/44 , B41M5/52 , Y10S428/913 , Y10S428/914
摘要： A thermal image transfer recording method includes the steps of holding a thermal image transfer recording medium including a support material and a thermal image transfer layer provided on the support material, and an image recording material between a line edge thermal head and a platen roller, with a contact pressure being applied therebetween; transferring the thermal image transfer recording layer imagewise from the thermal image transfer recording medium to the image recording material with imagewise application of heat by use of the line edge thermal head; and taking up the thermal image transfer recording medium after the image transfer, with the take-up tension applied to the thermal image transfer recording medium being set larger than both the shearing strength and peeling strength at 70.degree. C. of the thermal image transfer layer. A thermal image transfer recording medium including a thermal image transfer layer with a shearing strength of 200 g/cm or more at 25.degree. C. provided on a support material is provided for use in this thermal image transfer recording method.
摘要翻译：热图像转印记录方法包括以下步骤：保持包括支撑材料和设置在支撑材料上的热图像转印层的热图像转印记录介质，以及在线边热敏头和压纸辊之间的图像记录材料，在它们之间施加接触压力; 通过使用线边热敏头成像地施加热量，将热图像转印记录层从热图像转印记录介质转印到图像记录材料; 并且在图像转印之后吸收热图像转印记录介质，其中施加到热图像转印记录介质的卷取张力被设定为大于热图像转印层的70℃的剪切强度和剥离强度两者。提供了一种包含设置在支撑材料上的在25℃下具有200g / cm 2以上的剪切强度的热转印层的热图像转印记录介质，用于该热图像转印记录方法。

5. 发明授权

US6117562A Thermal image transfer recording medium 失效
标题翻译：热转印记录介质
公开(公告)号：US6117562A
公开(公告)日：2000-09-12
申请号：US979368
申请日：1997-11-26
申请人： Junko Yamaguchi , Mitsuru Maeda , Tetsuji Kunitake , Kazuyoshi Inamura , Yasumitsu Kuga , Shigeru Miyajima , Tadafumi Tatewaki , Yoshiaki Yamada
发明人： Junko Yamaguchi , Mitsuru Maeda , Tetsuji Kunitake , Kazuyoshi Inamura , Yasumitsu Kuga , Shigeru Miyajima , Tadafumi Tatewaki , Yoshiaki Yamada
IPC分类号： B41M5/26 , B41M5/392 , B41M5/395
CPC分类号： B41M5/395 , B41M5/392 , Y10S428/913 , Y10S428/914
摘要： A thermal image transfer recording sodium includes a support and a thermal image transfer ink layer formed on the support. The thermal image transfer ink layer contains a coloring agent, a resin with a melting point of 120.degree. C. or more and an SP value of 10.5 to 12.5, and a melt viscosity lowering material for lowering the melt viscosity of the resin, with the compatibility of the resin and the malt viscosity lowering material, measured by a transparency measurement method, being 0.20 or less, or with the melt viscosity at 150.degree. C. of the thermal image transfer ink layer being in the range of 1.times.10.sup.2 to 5.times.10.sup.6 poise.
摘要翻译：热转印记录钠包括形成在载体上的载体和热图像转印油墨层。热转印油墨层含有着色剂，熔点为120℃以上，SP值为10.5〜12.5的树脂，降低树脂的熔融粘度的熔融粘度降低材料，通过透明度测量方法测量的树脂和麦芽粘度降低材料的相容性为0.20或更低，或热图像转印油墨层的150℃下的熔体粘度在1×102-5×10 6泊的范围内。

6. 发明授权

US5250346A Thermal image transfer recording medium 失效
标题翻译：热转印记录介质
公开(公告)号：US5250346A
公开(公告)日：1993-10-05
申请号：US738441
申请日：1991-07-31
申请人： Moriyasu Nagai , Yuichi Taka , Tadafumi Tatewaki , Shigeru Miyajima , Yoshihiko Hiyoshi , Youji Ide , Nobuyuki Maeda , Kumi Surizaki , Tetsuji Kunitake
发明人： Moriyasu Nagai , Yuichi Taka , Tadafumi Tatewaki , Shigeru Miyajima , Yoshihiko Hiyoshi , Youji Ide , Nobuyuki Maeda , Kumi Surizaki , Tetsuji Kunitake
IPC分类号： B41M5/392 , B41M5/40 , B41M5/42 , B41M5/44 , B32B9/04
CPC分类号： B41M5/42 , B41M5/392 , B41M5/426 , B41M5/44 , Y10S428/913 , Y10S428/914
摘要： A thermal image transfer recording medium is composed of a support and a thermofusible ink layer formed on the support, with the water-content ratio of the recording medium excluding the support being in the range of 0.3 to 4.0 wt. % of the total weight of the recording medium excluding the support.
摘要翻译：热图像转印记录介质由支撑体和形成在载体上的热熔性油墨层组成，不包括载体的记录介质的含水率在0.3至4.0重量％的范围内。不包括载体的记录介质的总重量的百分比。

7. 发明授权

US5110389A Thermosensitive image transfer recording medium 失效
标题翻译：热敏图像转印记录介质
公开(公告)号：US5110389A
公开(公告)日：1992-05-05
申请号：US707939
申请日：1991-05-28
申请人： Yoshihiko Hiyoshi , Youji Ide , Masanaka Nagamoto , Tetsuji Kunitake
发明人： Yoshihiko Hiyoshi , Youji Ide , Masanaka Nagamoto , Tetsuji Kunitake
IPC分类号： B41M5/28 , B41M5/26 , B41M5/34 , B41M5/382 , B41M5/392 , B41M5/395 , B41M5/42
CPC分类号： B41M5/423 , B41M5/38214 , B41M5/392 , B41M5/395 , B41M5/34 , Y10S428/913 , Y10S428/914 , Y10T428/254 , Y10T428/258 , Y10T428/259 , Y10T428/265 , Y10T428/31507 , Y10T428/31511 , Y10T428/31721 , Y10T428/31739 , Y10T428/31786 , Y10T428/31826 , Y10T428/31855 , Y10T428/31928 , Y10T428/31931
摘要： A thermosensitive image transfer recording medium is disclosed, which comprises a support and a thermofusible ink layer formed thereon, comprising a thermofusible material, a coloring agent, and a filler, with the difference between the refractive index of the filler and the refractive index of the thermofusible material being 0.15 or less.
摘要翻译：公开了一种热敏图像转印记录介质，其包含支撑体和形成在其上的热熔性油墨层，包括热熔性材料，着色剂和填料，其中填料的折射率与折射率之差热熔性材料为0.15以下。

8. 发明授权

US5053267A Thermosensitive image transfer recording medium 失效
标题翻译：热敏图像转印记录介质
公开(公告)号：US5053267A
公开(公告)日：1991-10-01
申请号：US556858
申请日：1990-07-24
申请人： Youji Ide , Tetsuji Kunitake , Masanaka Nagamoto , Yoshihiko Hiyoshi
发明人： Youji Ide , Tetsuji Kunitake , Masanaka Nagamoto , Yoshihiko Hiyoshi
IPC分类号： B41J31/00 , B41M5/34 , B41M5/42 , B41M5/20
CPC分类号： B41M5/423 , B41M5/345 , Y10S428/913 , Y10S428/914 , Y10T428/24942 , Y10T428/24975 , Y10T428/265 , Y10T428/31507 , Y10T428/31721 , Y10T428/31725 , Y10T428/31971
摘要： A thermosensitive image transfer recording medium is disclosed, which comprises (a) a support, (b) a peel-off layer formed on the support, which comprises as the main component a thermofusible material, and has a melt viscosity A, and (c) a transparent thermofusible ink layer comprising a plurality of different color thermofusible ink sections, formed side by side in the form of a repeating unit on the peel-off layer, each thermofusible ink section comprising as the main components a thermofusible resin and a coloring agent and having a melt viscosity B which is larger than the melt viscosity A of the peel-off layer, with the melt viscosity A of the peel-off layer being in the range of 10 cps to 10,000 cps at 110.degree. C., and the melt viscosity B of the thermofusible ink layer being in the range of 100 cps to 500,000 cps at 110.degree. C.
摘要翻译：公开了一种热敏图像转印记录介质，其包括（a）支撑体，（b）形成在载体上的剥离层，其包含作为主要组分的热熔性材料，并且具有熔体粘度A和（c ）一种透明的可热熔油墨层，包括多个不同颜色的可热熔油墨部分，其在剥离层上以重复单元的形式并排形成，每个热熔性油墨部分包括作为主要组分的热熔性树脂和着色剂并且具有大于剥离层的熔融粘度A的熔融粘度B，剥离层的熔融粘度A在110℃为10cps至10,000cps的范围内，并且热熔性油墨层的熔融粘度B在110℃在100cps至500,000cps的范围内。

9. 发明授权

US08760908B2 Non-volatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US08760908B2
公开(公告)日：2014-06-24
申请号：US13235431
申请日：2011-09-18
申请人： Tetsuji Kunitake , Kenichi Murooka
发明人： Tetsuji Kunitake , Kenichi Murooka
IPC分类号： G11C11/00
CPC分类号： G11C13/0004 , G11C8/08 , G11C8/14 , G11C13/0007 , G11C13/0011 , G11C13/0023 , G11C13/0069 , G11C2013/0076 , G11C2213/71
摘要： A nonvolatile semiconductor memory device includes: a memory cell array which has a plurality of first lines, a plurality of second lines intersecting the plurality of first lines and a plurality of memory cells which store an electrically rewritable resistance value as data in a non-volatile manner; a first decoder which is connected to one ends of the plurality of first lines and selects the first lines; a second decoder which is connected to the plurality of second lines and selects the second lines; and a voltage applying circuit which is connected to one of the first and second decoders and which applies a predetermined voltage between the first and second lines selected by the first and second decoders. The second decoder sequentially selects the second lines in a direction from the other ends to the one ends of the first lines.
摘要翻译：非易失性半导体存储器件包括：存储单元阵列，其具有多个第一线，与多条第一线相交的多条第二线，以及存储电可重写电阻值作为非易失性数据的多个存储单元方式; 第一解码器，其连接到所述多个第一线的一端并选择所述第一线; 第二解码器，连接到所述多个第二线并选择所述第二线; 以及电压施加电路，其连接到第一和第二解码器中的一个，并且在由第一和第二解码器选择的第一和第二线之间施加预定电压。第二解码器从第一行的另一端到一端的方向依次选择第二行。

10. 发明申请

US20110233502A1 NONVOLATILE MEMORY DEVICE 审中-公开
标题翻译：非易失性存储器件
公开(公告)号：US20110233502A1
公开(公告)日：2011-09-29
申请号：US13051650
申请日：2011-03-18
申请人： Takashi SHIGEOKA , Tetsuji Kunitake , Hisashi Kato , Kenji Aoyama , Kensuke Takahashi
发明人： Takashi SHIGEOKA , Tetsuji Kunitake , Hisashi Kato , Kenji Aoyama , Kensuke Takahashi
IPC分类号： H01L45/00
CPC分类号： H01L45/1233 , G11C13/0007 , G11C2013/0083 , G11C2213/72 , H01L27/2409 , H01L27/2463 , H01L27/2481 , H01L45/08 , H01L45/1266 , H01L45/146 , H01L45/1616 , H01L45/1625 , H01L45/1675
摘要： According to one embodiment, a nonvolatile memory device is provided, which includes a nonvolatile memory element in which an anode, a nonvolatile memory layer formed of a metal oxide film, and a cathode are stacked. The anode is formed of a metal nitride material and includes nitrogen more than a stoichiometric ratio of the metal nitride material. The cathode is formed of a metal material.
摘要翻译：根据一个实施例，提供了一种非易失性存储器件，其包括其中堆叠阳极，由金属氧化物膜形成的非易失性存储层和阴极的非易失性存储元件。阳极由金属氮化物材料形成，并且包括超过金属氮化物材料的化学计量比的氮。阴极由金属材料形成。

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