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    • 4. 发明申请
    • SUBSTRATE PROCESSING APPARATUS FOR PERFORMING ETCHING PROCESS WITH PHOSPHORIC ACID SOLUTION
    • 用磷酸溶液进行蚀刻工艺的基板加工装置
    • US20080066863A1
    • 2008-03-20
    • US11856764
    • 2007-09-18
    • Hiromi KIYOSETeruyuki KOBAYASHI
    • Hiromi KIYOSETeruyuki KOBAYASHI
    • H01L21/306
    • H01L21/31111H01L21/67086H01L21/67253
    • A phosphoric acid solution stored in an immersion bath is circulated through a circulation line. Substrates on each of which a silicon oxide film and a silicon nitride film are formed are immersed into the phosphoric acid solution in the immersion bath, to proceed a process of selectively etching the silicon nitride film. A recovery line draws part of the phosphoric acid solution circulating through the circulation line, and collects and discharges siloxane with a recovery device to recover the phosphoric acid solution. A control part controls a flow rate regulating valve on the basis of measurement results of an outlet concentration meter and an inlet concentration meter, to regulate the flow rate of the phosphoric acid solution to be circulated to the immersion bath so that the concentration of siloxane contained in the phosphoric acid solution stored in the immersion bath should be constant.
    • 储存在浸浴中的磷酸溶液通过循环管线循环。 将形成有氧化硅膜和氮化硅膜的基板浸渍在浸渍浴中的磷酸溶液中,进行选择性蚀刻氮化硅膜的工序。 回收线吸收通过循环管线循环的一部分磷酸溶液,并用回收装置收集和排出硅氧烷以回收磷酸溶液。 控制部分根据出口浓度计和入口浓度计的测量结果控制流量调节阀,以调节要循环到浸浴中的磷酸溶液的流速,使得硅氧烷的含量 在储存在浸浴中的磷酸溶液中应该是恒定的。