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    • 1. 发明授权
    • Audio frequency power amplifier
    • 音频功率放大器
    • US4100501A
    • 1978-07-11
    • US767963
    • 1977-02-11
    • Harushige NakagakiTohru SampeiNobutaka AmadaTatsuo Baba
    • Harushige NakagakiTohru SampeiNobutaka AmadaTatsuo Baba
    • H03F1/02H03F3/30H03F3/26
    • H03F1/0244H03F3/3076
    • An audio frequency power amplifier wherein an input signal is applied to respective input electrodes of a pair of transistors of the same conductivity type to produce an output signal at an output electrode of one of the pair of transistors. A common electrode of the one transistor is connected with an output electrode of the other transistor and a power from a first D.C. power supply is supplied to the junction thereof through a diode while a power is supplied to a common electrode of the other transistor from a second D.C. power supply having a higher voltage than that of the first D.C. power supply. The other transistor and the diode are alternately rendered conductive and non-conductive in response to the signal level of the input signal, a capacitor is connected to the input electrode of the other transistor, which capacitor is charged during the turn-off of the other transistor whereby the charge is supplied to the other transistor upon turning on of the other transistor to shorten the rise time.
    • 一种音频功率放大器,其中输入信号被施加到相同导电类型的一对晶体管的相应输入电极,以在该对晶体管之一的输出电极处产生输出信号。 一个晶体管的公共电极与另一个晶体管的输出电极连接,并且来自第一直流电源的功率通过二极管被提供给其结,同时从另一个晶体管的公共电极向 第二直流电源的电压高于第一直流电源的电压。 另一个晶体管和二极管响应于输入信号的信号电平交替地导通和不导通,电容器连接到另一个晶体管的输入电极,该电容器在另一个晶体管的截止期间被充电 晶体管,由此在另一晶体管导通时将电荷提供给另一晶体管以缩短上升时间。
    • 2. 发明授权
    • Read-only memory and method of manufacturing the same
    • 只读存储器及其制造方法
    • US4630237A
    • 1986-12-16
    • US759009
    • 1985-07-24
    • Kenji MiuraShigeru NakajimaKazushige MinegishiToshifumi SomataniTakashi MorieTatsuo Baba
    • Kenji MiuraShigeru NakajimaKazushige MinegishiToshifumi SomataniTakashi MorieTatsuo Baba
    • G11C17/08H01L21/8246H01L21/8247H01L27/10H01L27/112H01L27/115H01L29/78G11C11/40G11C13/00
    • H01L29/7827H01L2924/0002Y10S257/903
    • A read-only memory has memory cells each with a vertical metal oxide semiconductor field effect transistor and a bit line. The vertical metal oxide semiconductor field effect transistor has a gate electrode serving as a word line, a source, a drain, and a vertical channel region between the source and drain constituted by first and second diffusion layers. The gate electrode is formed on a side wall of a trench, which has a pair of side walls substantially perpendicular to a major surface of a semiconductor substrate of a first conductivity type and an interconnecting bottom surface substantially perpendicular to the side wall surfaces. The first and second diffusion layers of a second conductivity type are formed in an upper portion of the semiconductor substrate and in a bottom of the trench, respectively. The bit lines are formed in a predetermined pattern. One of the first and second diffusion layers is connected to the bit line through a contact hole and the other of the first and second diffusion layers is used as a common current line. A method of manufacturing the read-only memory is also proposed.
    • 只读存储器具有各自具有垂直金属氧化物半导体场效应晶体管和位线的存储单元。 垂直金属氧化物半导体场效应晶体管具有用作由第一和第二扩散层构成的源极和漏极之间的字线,源极,漏极和垂直沟道区的栅电极。 栅电极形成在沟槽的侧壁上,沟槽的侧壁具有基本上垂直于第一导电类型的半导体衬底的主表面的一对侧壁和基本上垂直于侧壁表面的互连底表面。 第二导电类型的第一和第二扩散层分别形成在半导体衬底的上部和沟槽的底部。 位线以预定图案形成。 第一和第二扩散层中的一个通过接触孔连接到位线,并且第一和第二扩散层中的另一个用作公共电流线。 还提出了制造只读存储器的方法。