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    • 9. 发明授权
    • Display device
    • 显示设备
    • US08933444B2
    • 2015-01-13
    • US13724294
    • 2012-12-21
    • Nobuyoshi SaitoKentaro MiuraShintaro NakanoTatsunori SakanoTomomasa UedaHajime Yamaguchi
    • Nobuyoshi SaitoKentaro MiuraShintaro NakanoTatsunori SakanoTomomasa UedaHajime Yamaguchi
    • H01L51/52H01L27/32H01L29/786
    • H01L51/5203H01L27/3262H01L29/7869
    • According to one embodiment, a display device includes a substrate, a thin film transistor, a passivation film, a hydrogen barrier film, a pixel electrode, an organic light emitting layer, an opposite electrode, and a sealing film. The thin film transistor is provided on a major surface of the substrate. The thin film transistor includes a gate electrode, a gate insulating film, a semiconductor film, a first conducting portion, and a second conducting portion. The passivation film is provided on the thin film transistor. The hydrogen barrier film is provided on the passivation film. The pixel electrode is electrically connected to one of the first conducting portion and the second conducting portion. The organic light emitting layer is provided on the pixel electrode. The opposite electrode is provided on the organic light emitting layer. The sealing film is provided on the hydrogen barrier film and the opposite electrode.
    • 根据一个实施例,显示装置包括基板,薄膜晶体管,钝化膜,氢阻挡膜,像素电极,有机发光层,相对电极和密封膜。 薄膜晶体管设置在基板的主表面上。 薄膜晶体管包括栅电极,栅极绝缘膜,半导体膜,第一导电部分和第二导电部分。 钝化膜设置在薄膜晶体管上。 氢屏障膜设置在钝化膜上。 像素电极电连接到第一导电部分和第二导电部分中的一个。 有机发光层设置在像素电极上。 相对电极设置在有机发光层上。 密封膜设置在氢阻挡膜和相对电极上。
    • 10. 发明申请
    • DISPLAY DEVICE
    • 显示设备
    • US20130313545A1
    • 2013-11-28
    • US13724294
    • 2012-12-21
    • Nobuyoshi SAITOKentaro MIURAShintaro NAKANOTatsunori SAKANOTomomasa UEDAHajime YAMAGUCHI
    • Nobuyoshi SAITOKentaro MIURAShintaro NAKANOTatsunori SAKANOTomomasa UEDAHajime YAMAGUCHI
    • H01L51/52H01L29/786
    • H01L51/5203H01L27/3262H01L29/7869
    • According to one embodiment, a display device includes a substrate, a thin film transistor, a passivation film, a hydrogen barrier film, a pixel electrode, an organic light emitting layer, an opposite electrode, and a sealing film. The thin film transistor is provided on a major surface of the substrate. The thin film transistor includes a gate electrode, a gate insulating film, a semiconductor film, a first conducting portion, and a second conducting portion. The passivation film is provided on the thin film transistor. The hydrogen barrier film is provided on the passivation film. The pixel electrode is electrically connected to one of the first conducting portion and the second conducting portion. The organic light emitting layer is provided on the pixel electrode. The opposite electrode is provided on the organic light emitting layer. The sealing film is provided on the hydrogen barrier film and the opposite electrode.
    • 根据一个实施例,显示装置包括基板,薄膜晶体管,钝化膜,氢阻挡膜,像素电极,有机发光层,相对电极和密封膜。 薄膜晶体管设置在基板的主表面上。 薄膜晶体管包括栅电极,栅极绝缘膜,半导体膜,第一导电部分和第二导电部分。 钝化膜设置在薄膜晶体管上。 氢屏障膜设置在钝化膜上。 像素电极电连接到第一导电部分和第二导电部分中的一个。 有机发光层设置在像素电极上。 相对电极设置在有机发光层上。 密封膜设置在氢阻挡膜和相对电极上。