会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明授权
    • Processing agent composition for semiconductor surface and method for processing semiconductor surface using same
    • 用于半导体表面的加工剂组合物和使用其的半导体表面的处理方法
    • US09034810B2
    • 2015-05-19
    • US13393981
    • 2010-09-01
    • Hironori MizutaTakuhiro Kimura
    • Hironori MizutaTakuhiro Kimura
    • C11D3/60G03F7/42H01L21/311C11D11/00
    • G03F7/425C11D11/0047G03F7/423G03F7/426H01L21/31133
    • The present invention is directed to provide a semiconductor surface treating agent; composition which is capable of stripping an anti-reflection coating layer, a resist layer, and a cured resist layer in the production process of a semiconductor device and the like easily and in a short time, as well as a method for treating a semiconductor surface, comprising that the composition is used. The present invention relates to a semiconductor surface treating agent; composition, comprising [I] a compound generating a fluorine ion in water, [II] a carbon radical generating agent; , [III] water, [IV] an organic solvent, and [V] at least one kind of compound selected from a group consisting of hydroxylamine and a hydroxylamine derivative represented by the general formula [1], as well as a method for treating the semiconductor surface, comprising that the composition is used: (wherein R1 represents a linear, branched or cyclic C1-6 alkyl group, or a linear or branched C1-4 substituted alkyl group having 1 to 3 hydroxyl groups; R2 represents a hydrogen atom, a linear, branched or cyclic C1-6 alkyl group, or a linear or branched C1-4 substituted alkyl group having 1 to 3 hydroxyl groups).
    • 本发明旨在提供一种半导体表面处理剂; 能够容易且短时间地在半导体装置等的制造工序中剥离防反射涂层,抗蚀剂层和固化的抗蚀剂层的组合物以及半导体表面的处理方法 包括使用该组合物。 本发明涉及半导体表面处理剂; 组合物,其包含[I]在水中产生氟离子的化合物,[II]碳自由基发生剂; ,[III]水,[IV]有机溶剂和[V]至少一种选自羟胺和由通式[1]表示的羟胺衍生物的化合物,以及一种治疗方法 该半导体表面包括使用该组合物:(其中R1表示直链,支链或环状C 1-6烷基或具有1-3个羟基的直链或支链C 1-4取代的烷基; R 2表示氢原子 直链,支链或环状C 1-6烷基,或具有1-3个羟基的直链或支链C 1-4取代的烷基)。
    • 3. 发明申请
    • PROCESSING AGENT COMPOSITION FOR SEMICONDUCTOR SURFACE AND METHOD FOR PROCESSING SEMICONDUCTOR SURFACE USING SAME
    • 用于半导体表面的处理剂组合物和使用其处理半导体表面的方法
    • US20120157368A1
    • 2012-06-21
    • US13393981
    • 2010-09-01
    • Hironori MizutaTakuhiro Kimura
    • Hironori MizutaTakuhiro Kimura
    • G03F7/42
    • G03F7/425C11D11/0047G03F7/423G03F7/426H01L21/31133
    • The present invention is directed to provide a semiconductor surface treating agent composition which is capable of stripping an anti-reflection coating layer, a resist layer, and a cured resist layer in the production process of a semiconductor device and the like easily and in a short time, as well as a method for treating a semiconductor surface, comprising that the composition is used. The present invention relates to a semiconductor surface treating agent composition, comprising [I] a compound generating a fluorine ion in water, [II] a carbon radical generating agent, [III] water, [IV] an organic solvent, and [V] at least one kind of compound selected from a group consisting of hydroxylamine and a hydroxylamine derivative represented by the general formula [1], as well as a method for treating the semiconductor surface, comprising that the composition is used: (wherein R1 represents a linear, branched or cyclic C1-6 alkyl group, or a linear or branched C1-4 substituted alkyl group having 1 to 3 hydroxyl groups; R2 represents a hydrogen atom, a linear, branched or cyclic C1-6 alkyl group, or a linear or branched C1-4 substituted alkyl group having 1 to 3 hydroxyl groups).
    • 本发明的目的在于提供一种半导体表面处理剂组合物,该半导体表面处理剂组合物能够容易且简便地在半导体器件等的制造过程中剥离抗反射涂层,抗蚀剂层和固化的抗蚀剂层 时间,以及用于处理半导体表面的方法,包括使用该组合物。 本发明涉及一种半导体表面处理剂组合物,其包含[I]在水中产生氟离子的化合物,[II]碳自由基产生剂,[III]水,[IV]有机溶剂和[V] 选自羟胺和由通式[1]表示的羟胺衍生物的至少一种化合物以及用于处理半导体表面的方法,包括使用该组合物:(其中R1表示直链 ,支链或环状C 1-6烷基,或具有1-3个羟基的直链或支链C 1-4取代的烷基; R 2表示氢原子,直链,支链或环状C 1-6烷基,或直链或支链 具有1〜3个羟基的支链C 1-4取代烷基)。
    • 4. 发明申请
    • Process for producing of an aminoalkylsulfonic acid and a method of salt exchange for a salt thereof
    • 氨基烷基磺酸的制备方法及其盐的盐交换方法
    • US20050261370A1
    • 2005-11-24
    • US10526438
    • 2003-08-27
    • Takuhiro KimuraTsutomo TaniReiji Miyahara
    • Takuhiro KimuraTsutomo TaniReiji Miyahara
    • C07C303/22C07C303/32C07C309/14A61K31/205C07C39/13
    • C07C303/22C07C303/32C07C309/14
    • A process for producing an aminoalkylsulfonic acid of formula [2]: wherein R1 and R2 are each independently hydrogen, alkyl, aryl or aralkyl; and R3 and R4 are each independently hydrogen or alkyl, comprising reacting an aminoalkylsulfonate salt of formula [1]: wherein M is alkali metal, organic ammonium or ammonium ion; and R1 to R4 are as described above, an aqueous solution thereof, or a solution dissolving any one of them in a water-soluble organic solvent, selected from alcohols having 1 to 3 carbon, carboxylic acids having 2 to 12 carbon and dimethylformamide, with an organic acid; and a method of salt exchange for an aminoalkylsulfonate salt of formula [1′]: wherein M′ is alkali metal, organic ammonium or ammonium ion; and R1 and R4 are as described above, comprising reacting the aminoalkylsulfonate salt formula [2] with a hydroxide of formula [6]: M′OH  [6]wherein M′ is as described above, in alcohol or water.
    • 制备式[2]的氨基烷基磺酸的方法:其中R 1和R 2各自独立地为氢,烷基,芳基或芳烷基; R 3和R 4各自独立地为氢或烷基,包括使式[1]的氨基烷基磺酸盐:其中M是碱金属,有机铵或铵离子; 和R 1至R 4如上所述,其水溶液或将它们中的任何一种溶解在水溶性有机溶剂中的溶液,所述溶液选自具有 1至3个碳,具有2至12个碳原子和二甲基甲酰胺的羧酸与有机酸; 和式[1']的氨基烷基磺酸盐的盐交换方法:其中M'是碱金属,有机铵或铵离子; R 1和R 4如上所述,包括使式[2]的氨基烷基磺酸盐与式[6]的氢氧化物反应:<β在线式 description =“In-line Formulas”end =“lead”?> M'OH [6] <?in-line-formula description =“In-line Formulas”end =“tail”?>其中M'如上所述 ,在酒精或水中。
    • 5. 发明授权
    • Process for producing of an aminoalkylsulfonic acid and a method of salt exchange for a salt thereof
    • 氨基烷基磺酸的制备方法及其盐的盐交换方法
    • US07049464B2
    • 2006-05-23
    • US10526438
    • 2003-08-27
    • Takuhiro KimuraTsutomu TaniReiji Miyahara
    • Takuhiro KimuraTsutomu TaniReiji Miyahara
    • C07C309/14
    • C07C303/22C07C303/32C07C309/14
    • A process for producing an aminoalkylsulfonic acid of formula [2]: wherein R1 and R2 are each independently hydrogen, alkyl, aryl or aralkyl; and R3 and R4 are each independently hydrogen or alkyl, comprising reacting an aminoalkylsulfonate salt of formula [1]: wherein M is alkali metal, organic ammonium or ammonium ion; and R1 to R4 are as described above,an aqueous solution thereof, or a solution dissolving any one of them in a water-soluble organic solvent, selected from alcohols having 1 to 3 carbon, carboxylic acids having 2 to 12 carbon and dimethylformamide, with an organic acid; anda method of salt exchange for an aminoalkylsulfonate salt of formula [1′]: wherein M′ is alkali metal, organic ammonium or ammonium ion; and R1 and R4 are as described above, comprising reacting the aminoalkylsulfonate salt formula [2] with a hydroxide of formula [6]: M′OH[6] wherein M′ is as described above, in alcohol or water.
    • 制备式[2]的氨基烷基磺酸的方法:其中R 1和R 2各自独立地为氢,烷基,芳基或芳烷基; R 3和R 4各自独立地为氢或烷基,包括使式[1]的氨基烷基磺酸盐:其中M是碱金属,有机铵或铵离子; 和R 1至R 4如上所述,其水溶液或将它们中的任何一种溶解在水溶性有机溶剂中的溶液,所述溶液选自具有 1至3个碳,具有2至12个碳原子和二甲基甲酰胺的羧酸与有机酸; 和式[1']的氨基烷基磺酸盐的盐交换方法:其中M'是碱金属,有机铵或铵离子; R 1和R 4如上所述,包括使式[2]的氨基烷基磺酸盐与式[6]的氢氧化物反应:<β在线式 description =“In-line Formulas”end =“lead”?> M'OH [6] <?in-line-formula description =“In-line Formulas”end =“tail”?>其中M'如上所述 ,在酒精或水中。