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    • 4. 发明申请
    • Solid-state imaging device, method of driving the device, and camera system
    • 固态成像装置,驱动装置的方法和相机系统
    • US20110115959A1
    • 2011-05-19
    • US12923915
    • 2010-10-14
    • Takayuki ToyamaHiroyuki Iwaki
    • Takayuki ToyamaHiroyuki Iwaki
    • H04N5/335
    • H04N5/378H04N5/335H04N5/374
    • A solid-state imaging device includes: a pixel section formed by pixels performing photoelectric conversion arranged in a matrix; a pixel signal readout section capable of column-parallel processing including an A/D conversion function for reading out a pixel signal from the pixel section and performing analog-digital conversion of the signal, the pixels being read in groups; a voltage sampling section sampling a bias voltage generated by an internal or external voltage generating circuit for a period in accordance with a control signal and supplying the sampled bias voltage to the pixel signal readout section; and a control section controlling the signal readout operation of the pixel signal readout section and the voltage sampling operation of the voltage sampling section. The pixel signal readout section includes a functional portion. The control section exercises control such that the voltage sampling operation is performed in a period other than at least either of a period in which an analog signal is read out or in which A/D conversion is carried out.
    • 固态成像装置包括:由以矩阵形式布置的执行光电转换的像素形成的像素部分; 能够进行列并行处理的像素信号读出部,其包括用于从像素部读出像素信号的A / D转换功能,并进行信号的模拟数字转换,所述像素被分组读取; 电压采样部分,根据控制信号对由内部或外部电压产生电路产生的偏置电压进行一段时间的采样,并将采样的偏置电压提供给像素信号读出部分; 以及控制部分,控制像素信号读出部分的信号读出操作和电压采样部分的电压采样操作。 像素信号读出部包括功能部。 控制部进行控制,使得在除了读出模拟信号的周期或执行A / D转换的周期之外的时段中执行电压采样操作。
    • 7. 发明授权
    • Semiconductor device and process for production thereof
    • 半导体装置及其制造方法
    • US07262446B2
    • 2007-08-28
    • US11103121
    • 2005-04-11
    • Takayuki Toyama
    • Takayuki Toyama
    • H01L31/0328H01L21/336
    • H01L29/66462H01L21/28593H01L29/7785
    • A semiconductor device which is capable of operating with a single positive power supply and has a low gate resistance, and a process for production thereof.The semiconductor device includes a channel layer (which constitutes a current channel), a first semiconductor layer formed on said channel layer, a second semiconductor layer in an island-like shape doped with a conductive impurity and formed on said first semiconductor layer, and a gate electrode formed on said second semiconductor layer, wherein said first and second semiconductor layers under said gate electrode have a conductive impurity region formed therein to control the threshold value of current flowing through said channel layer, and the conductive impurity region formed in second semiconductor layer is doped with a conductive impurity more heavily than in the conductive impurity region formed in said first semiconductor layer.
    • 能够使用单个正电源并具有低栅极电阻的半导体器件及其制造方法。 半导体器件包括沟道层(其构成电流沟道),形成在所述沟道层上的第一半导体层,在所述第一半导体层上形成有导电杂质的岛状形状的第二半导体层,以及 栅极形成在所述第二半导体层上,其中所述栅电极下方的所述第一和第二半导体层具有形成在其中的导电杂质区,以控制流过所述沟道层的电流的阈值,以及形成在第二半导体层中的导电杂质区 掺杂有比在所述第一半导体层中形成的导电杂质区域更重的导电杂质。