专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20120126875A1 SEMICONDUCTOR SWITCH 有权
标题翻译：半导体开关
公开(公告)号：US20120126875A1
公开(公告)日：2012-05-24
申请号：US13234010
申请日：2011-09-15
申请人： Takayuki Teraguchi
发明人： Takayuki Teraguchi
IPC分类号： H03L5/00
CPC分类号： H03K3/356182
摘要： According to one embodiment, a semiconductor switch includes a power supply section, a driver, and a switch section. The power supply section is configured to generate a first potential higher than a positive power supply potential, and a negative second potential. The driver is connected to the power supply section and configured to output a control signal. A potential of the control signal is set to the first potential at high level and set to the second potential at low level according to a terminal switching signal. The switch section is configured to receive the control signal and switch a connection between terminals. The driver has a first level shifter, a second level shifter and a first circuit. The first level shifter has a first high-side switch and a first low-side switch. The second level shifter has a second high-side switch and a second low-side switch.
摘要翻译：根据一个实施例，半导体开关包括电源部分，驱动器和开关部分。电源部被配置为产生高于正电源电位和负第二电位的第一电位。驱动器连接到电源部分并被配置为输出控制信号。控制信号的电位被设定为高电平的第一电位，并根据端子切换信号设定为低电平的第二电位。开关部分被配置为接收控制信号并切换端子之间的连接。驱动器具有第一电平移位器，第二电平移位器和第一电路。第一电平移位器具有第一高侧开关和第一低侧开关。第二电平移位器具有第二高侧开关和第二低侧开关。

2. 发明授权

US07659770B2 High frequency switching circuit 有权
标题翻译：高频开关电路
公开(公告)号：US07659770B2
公开(公告)日：2010-02-09
申请号：US12099858
申请日：2008-04-09
申请人： Takayuki Teraguchi , Katsue Kawakyu
发明人： Takayuki Teraguchi , Katsue Kawakyu
IPC分类号： H03K3/01
CPC分类号： H03K17/005 , H03K17/161 , H03K17/302 , H03K17/6871 , H03K17/693 , H03K2217/0018 , Y10T307/944
摘要： A high frequency switching circuit is disclosed. The high frequency switching circuit is provided with first and second high frequency signal terminals, a control terminal, a field-effect transistor having a drain, a source and a gate. The field-effect transistor is connected between the first and the second high frequency signal terminals so as to switch a high frequency signal. The high frequency switching circuit is further provided with a variable resistance circuit which is connected between the gate of the field-effect transistor and the control terminal.
摘要翻译：公开了一种高频开关电路。高频开关电路设置有第一和第二高频信号端子，控制端子，具有漏极，源极和栅极的场效应晶体管。场效应晶体管连接在第一和第二高频信号端子之间，以切换高频信号。高频开关电路还具有连接在场效应晶体管的栅极与控制端子之间的可变电阻电路。

3. 发明授权

US08476956B2 Semiconductor switch 有权
标题翻译：半导体开关
公开(公告)号：US08476956B2
公开(公告)日：2013-07-02
申请号：US13234010
申请日：2011-09-15
申请人： Takayuki Teraguchi
发明人： Takayuki Teraguchi
IPC分类号： H03L5/00
CPC分类号： H03K3/356182
摘要： According to one embodiment, a semiconductor switch includes a power supply section, a driver, and a switch section. The power supply section is configured to generate a first potential higher than a positive power supply potential, and a negative second potential. The driver is connected to the power supply section and configured to output a control signal. A potential of the control signal is set to the first potential at high level and set to the second potential at low level according to a terminal switching signal. The switch section is configured to receive the control signal and switch a connection between terminals. The driver has a first level shifter, a second level shifter and a first circuit. The first level shifter has a first high-side switch and a first low-side switch. The second level shifter has a second high-side switch and a second low-side switch.
摘要翻译：根据一个实施例，半导体开关包括电源部分，驱动器和开关部分。电源部被配置为产生高于正电源电位和负第二电位的第一电位。驱动器连接到电源部分并被配置为输出控制信号。控制信号的电位被设定为高电平的第一电位，并根据端子切换信号设定为低电平的第二电位。开关部分被配置为接收控制信号并切换端子之间的连接。驱动器具有第一电平移位器，第二电平移位器和第一电路。第一电平移位器具有第一高侧开关和第一低侧开关。第二电平移位器具有第二高侧开关和第二低侧开关。

4. 发明授权

US08385860B2 Power detector and wireless device 失效
标题翻译：功率检测器和无线设备
公开(公告)号：US08385860B2
公开(公告)日：2013-02-26
申请号：US13053506
申请日：2011-03-22
申请人： Takayuki Teraguchi , Masahiro Hasegawa , Noriyoshi Odaki , Shigehiro Hosoi , Takahiro Nakagawa
发明人： Takayuki Teraguchi , Masahiro Hasegawa , Noriyoshi Odaki , Shigehiro Hosoi , Takahiro Nakagawa
IPC分类号： H04B1/04 , H04B17/00
CPC分类号： G01R21/10
摘要： According to one embodiment, a power detector includes a reference voltage generator, a square signal generator, a detection circuit, and an output circuit. The reference voltage generator is configured to receive a bias voltage and generate a reference voltage. The square signal generator is configured to receive a voltage having a high frequency input voltage superimposed on the bias voltage and output a signal including the reference voltage, a voltage of a square of the high frequency input voltage, and a high-frequency signal. The detection circuit has a first lowpass filter, a first operational amplifier configured to amplify error between an output voltage of the first lowpass filter and the reference voltage and output the error as a control voltage, and a feedback transistor configured to feed a feedback current according to the control voltage back to an output terminal of the square signal generator.
摘要翻译：根据一个实施例，功率检测器包括参考电压发生器，方形信号发生器，检测电路和输出电路。参考电压发生器被配置为接收偏置电压并产生参考电压。方波信号发生器被配置为接收具有叠加在偏置电压上的高频输入电压的电压，并输出包括基准电压，高频输入电压的平方的电压和高频信号的信号。检测电路具有第一低通滤波器，第一运算放大器，被配置为放大第一低通滤波器的输出电压与参考电压之间的误差，并输出误差作为控制电压;以及反馈晶体管，被配置为馈送反馈电流，到控制电压返回到方形信号发生器的输出端。

5. 发明申请

US20100007422A1 AMPLIFIER CIRCUIT 失效
标题翻译：放大器电路
公开(公告)号：US20100007422A1
公开(公告)日：2010-01-14
申请号：US12464175
申请日：2009-05-12
申请人： Takayuki Teraguchi
发明人： Takayuki Teraguchi
IPC分类号： H03F3/04
CPC分类号： H03F3/195 , H03F3/347 , H03F2200/18 , H03F2200/294
摘要： There is provided an amplifier circuit includes: an amplifying transistor; a first transistor having a DC current amplification factor generally equal to the DC current amplification factor of the amplifying transistor and constituting a current mirror circuit in conjunction with the amplifying transistor; and a current source circuit being operable to supply a current to the first transistor and including a second transistor having opposite conductivity type to the conductivity type of the first transistor. The second transistor is operated in a saturation region at a power supply voltage lower than an operating voltage range so that the DC current amplification factor of the amplifying transistor can be detected.
摘要翻译：提供了一种放大器电路，包括：放大晶体管; 第一晶体管，具有与放大晶体管的直流电流放大系数大致相等的直流电流放大系数，并与放大晶体管结合构成电流镜电路; 并且电流源电路可操作以向第一晶体管提供电流，并且包括具有与第一晶体管的导电类型相反的导电类型的第二晶体管。第二晶体管在低于工作电压范围的电源电压的饱和区域工作，从而可以检测放大晶体管的直流电流放大系数。

6. 发明申请

US20080258799A1 HIGH FREQUENCY SWITCHING CIRCUIT 有权
标题翻译：高频开关电路
公开(公告)号：US20080258799A1
公开(公告)日：2008-10-23
申请号：US12099858
申请日：2008-04-09
申请人： Takayuki Teraguchi , Katsue Kawakyu
发明人： Takayuki Teraguchi , Katsue Kawakyu
IPC分类号： H03K17/687 , H01H33/59
CPC分类号： H03K17/005 , H03K17/161 , H03K17/302 , H03K17/6871 , H03K17/693 , H03K2217/0018 , Y10T307/944
摘要： A high frequency switching circuit is disclosed. The high frequency switching circuit is provided with first and second high frequency signal terminals, a control terminal, a field-effect transistor having a drain, a source and a gate. The field-effect transistor is connected between the first and the second high frequency signal terminals so as to switch a high frequency signal. The high frequency switching circuit is further provided with a variable resistance circuit which is connected between the gate of the field-effect transistor and the control terminal.
摘要翻译：公开了一种高频开关电路。高频开关电路设置有第一和第二高频信号端子，控制端子，具有漏极，源极和栅极的场效应晶体管。场效应晶体管连接在第一和第二高频信号端子之间，以切换高频信号。高频开关电路还具有连接在场效应晶体管的栅极与控制端子之间的可变电阻电路。

7. 发明申请

US20100237964A1 HIGH FREQUENCY FILTER 审中-公开
标题翻译：高频滤波器
公开(公告)号：US20100237964A1
公开(公告)日：2010-09-23
申请号：US12699218
申请日：2010-02-03
申请人： Takayuki Teraguchi , Katsue Kawakyu
发明人： Takayuki Teraguchi , Katsue Kawakyu
IPC分类号： H03H7/01
CPC分类号： H03H7/12 , H03H7/175 , H03H7/1758 , H03H7/1775 , H03H7/1791
摘要： A high frequency filter includes: an input terminal; an output terminal; and a variable capacitance circuit provided between the input terminal and the output terminal or between a ground and one of the input terminal and the output terminal, and formed on the semiconductor substrate including a capacitor and a switch element. The switch element is connected in series with the capacitor.
摘要翻译：高频滤波器包括：输入端; 输出端子; 以及可变电容电路，其设置在所述输入端子和所述输出端子之间，或者设置在所述输入端子和所述输出端子的接地与所述输入端子和所述输出端子之间，并且形成在所述半导体衬底上，所述半导体衬开关元件与电容器串联连接。

8. 发明申请

US20080290928A1 SWITCHING CIRCUIT 审中-公开
标题翻译：切换电路
公开(公告)号：US20080290928A1
公开(公告)日：2008-11-27
申请号：US12123819
申请日：2008-05-20
申请人： Katsue Kawakyu , Takayuki Teraguchi
发明人： Katsue Kawakyu , Takayuki Teraguchi
IPC分类号： H03K17/687
CPC分类号： H03K17/005 , H03K17/161 , H03K17/302 , H03K17/6871 , H03K2217/0018
摘要： A switching circuit is disclosed. The switching circuit is provided with first and second signal terminals, a control terminal, first and second resisters, and a field-effect transistor having a drain, a source, a gate and a back-gate. One end of the first resister is connected with the control terminal. The field-effect transistor is connected between the first and second signal terminals. The gate of the field-effect transistor is connected with the other end of the first resister. The back-gate of the field-effect transistor is connected with one end of the second resister. One of the source and drain of the first field-effect transistor is connected with the other end of the second resister.
摘要翻译：公开了一种开关电路。开关电路设置有第一和第二信号端子，控制端子，第一和第二电阻器以及具有漏极，源极，栅极和后栅极的场效应晶体管。第一电阻器的一端与控制端子相连。场效应晶体管连接在第一和第二信号端子之间。场效应晶体管的栅极与第一电阻的另一端连接。场效应晶体管的背栅极与第二电阻的一端连接。第一场效应晶体管的源极和漏极之一与第二电阻的另一端连接。

9. 发明申请

US20120008669A1 POWER DETECTOR AND WIRELESS DEVICE 失效
标题翻译：电力检测器和无线设备
公开(公告)号：US20120008669A1
公开(公告)日：2012-01-12
申请号：US13053506
申请日：2011-03-22
申请人： Takayuki Teraguchi , Masahiro Hasegawa , Noriyoshi Odaki , Shigehiro Hosoi , Takahiro Nakagawa
发明人： Takayuki Teraguchi , Masahiro Hasegawa , Noriyoshi Odaki , Shigehiro Hosoi , Takahiro Nakagawa
IPC分类号： H04B17/00 , G01R21/00
CPC分类号： G01R21/10
摘要： According to one embodiment, a power detector includes a reference voltage generator, a square signal generator, a detection circuit, and an output circuit. The reference voltage generator is configured to receive a bias voltage and generate a reference voltage. The square signal generator is configured to receive a voltage having a high frequency input voltage superimposed on the bias voltage and output a signal including the reference voltage, a voltage of a square of the high frequency input voltage, and a high-frequency signal. The detection circuit has a first lowpass filter, a first operational amplifier configured to amplify error between an output voltage of the first lowpass filter and the reference voltage and output the error as a control voltage, and a feedback transistor configured to feed a feedback current according to the control voltage back to an output terminal of the square signal generator.
摘要翻译：根据一个实施例，功率检测器包括参考电压发生器，方形信号发生器，检测电路和输出电路。参考电压发生器被配置为接收偏置电压并产生参考电压。方波信号发生器被配置为接收具有叠加在偏置电压上的高频输入电压的电压，并输出包括基准电压，高频输入电压的平方的电压和高频信号的信号。检测电路具有第一低通滤波器，第一运算放大器，被配置为放大第一低通滤波器的输出电压与参考电压之间的误差，并输出误差作为控制电压;以及反馈晶体管，被配置为馈送反馈电流，到控制电压返回到方形信号发生器的输出端。

10. 发明授权

US07898335B2 Amplifier circuit 失效
标题翻译：放大器电路
公开(公告)号：US07898335B2
公开(公告)日：2011-03-01
申请号：US12464175
申请日：2009-05-12
申请人： Takayuki Teraguchi
发明人： Takayuki Teraguchi
IPC分类号： H03G3/30
CPC分类号： H03F3/195 , H03F3/347 , H03F2200/18 , H03F2200/294
摘要： There is provided an amplifier circuit includes: an amplifying transistor; a first transistor having a DC current amplification factor generally equal to the DC current amplification factor of the amplifying transistor and constituting a current mirror circuit in conjunction with the amplifying transistor; and a current source circuit being operable to supply a current to the first transistor and including a second transistor having opposite conductivity type to the conductivity type of the first transistor. The second transistor is operated in a saturation region at a power supply voltage lower than an operating voltage range so that the DC current amplification factor of the amplifying transistor can be detected.
摘要翻译：提供了一种放大器电路，包括：放大晶体管; 第一晶体管，具有与放大晶体管的直流电流放大系数大致相等的直流电流放大系数，并与放大晶体管结合构成电流镜电路; 并且电流源电路可操作以向第一晶体管提供电流，并且包括具有与第一晶体管的导电类型相反的导电类型的第二晶体管。第二晶体管在低于工作电压范围的电源电压的饱和区域工作，从而可以检测放大晶体管的直流电流放大系数。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式