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    • 2. 发明授权
    • Process of preparing calcium hydrogen phosphate anhydride suitable as
material for phosphors
    • 适合作为磷光体材料的磷酸氢钙磷酸盐的制备方法
    • US4203955A
    • 1980-05-20
    • US931902
    • 1978-08-08
    • Takamitsu EnomotoKyoji TanakaHiromi KawamotoTamotsu MizunoMasao Fujinaga
    • Takamitsu EnomotoKyoji TanakaHiromi KawamotoTamotsu MizunoMasao Fujinaga
    • C01B25/32C09K11/71
    • C09K11/71C01B25/32
    • A process of preparing calcium hydrogen phosphate anhydride suitable as a raw material for phosphate phosphors, wherein CaHPO.sub.4.2H.sub.2 O is precipitated by mixing aqueous solutions of NaNH.sub.4 HPO.sub.4.4H.sub.2 O and CaCl.sub.2.6H.sub.2 O at 5.degree.-40.degree. C. An entire quantity of CaHPO.sub.4.2H.sub.2 O to be converted to CaHPO.sub.4 in one batch is put into an acidified water maintained above 80.degree. C. all at once. Crystalline CaHPO.sub.4 is obtained through agitation of a resultant hot slurry for a few minutes. Crystal habit of the product depends on the pH of the hot water: lozenge-shaped plates when the pH is below 3.4, parallelogram plates in the pH range of 3.4-4.4, and square or rectangular plates when the pH is above 4.4. The particle size of CaHPO.sub.4 depends on the water temperature and the degree of agitation. To precipitate CaHPO.sub.4.2H.sub.2 O in the presence of suitable quantity of seed crystals is effective for minimizing the Na content of CaHPO.sub.4.
    • 制备适合磷酸盐磷光体的磷酸氢钙酸酐的方法,其中通过在5°-40℃下混合NaNH 4 HPO 4·4H 2 O和CaCl 2·6H 2 O的水溶液使CaHPO 4·2H 2 O沉淀。将全部量的CaHPO 4·2H 2 O 一次性转化为CaHPO4,一次放入保持在80℃以上的酸化水中。 通过搅拌所得热浆料几分钟获得结晶CaHPO 4。 产品的水晶习惯取决于热水的pH值:当pH值低于3.4时,菱形板,平均四边形板在pH4.4-4.4的范围内,当pH值高于4.4时,方板或矩形板。 CaHPO4的粒径取决于水温和搅拌程度。 在合适量的晶种存在下沉淀CaHPO 4·2H 2 O是有效的,以使CaHPO 4的Na含量最小化。
    • 3. 发明授权
    • Powder composition for sintering into modified barium titanate
semiconductive ceramic
    • 用于烧结成改性钛酸钡半导体陶瓷的粉末组合物
    • US5219811A
    • 1993-06-15
    • US841210
    • 1992-02-27
    • Takamitsu EnomotoMidori KawaharaNoboru MurataHiroshi UedaNaoki Okada
    • Takamitsu EnomotoMidori KawaharaNoboru MurataHiroshi UedaNaoki Okada
    • C04B35/468H01C7/02
    • C04B35/4684H01C7/025
    • To produce a modified barium titanate ceramic which is semiconductive and sufficiently high in breakdown voltage and has a low specific resistance at room temperature and a high positive temperature coefficient (PTC) of resistance, the invention provides a powder composition comprising (A) a basic mixture consisting of 45-85 mol % of BaTiO.sub.3 powder, 1-20 mol % of SrTiO.sub.3 powder, 5-20 mol % of CaTiO.sub.3 powder and 1-20 mol % of PbTiO.sub.3 powder, (B) a source of a dopant element such as Nb, Sb, Y, La or Ce to render the ceramic semiconductive, (C) a source of Mn such as MnC.sub.2 O.sub.4 and/or a source of Cu such as CuO added such that the total amount of Mn and Cu is not more than 0.06 mol % on the basis of the quantity of the mixture (A) with proviso that the amount of Mn is not more than 0.025 mol % and (D) SiO.sub.2 amounting to 0.1-2.0 mol % on the basis of the quantity of the mixture (A). The BaTiO.sub.3 powder and the SrTiO.sub.3 powder are produced by calcining BaTiO(C.sub.2 O.sub.4).sub.2 and SrTiO(C.sub.2 O.sub.4).sub.2, respectively, and in each of these powders very fine primary particles agglomerate to constitute porous and coarse secondary particles (about 100-200 .mu.m). The PbTiO.sub.3 powder may be produced by calcining PbTiO(C.sub.2 O.sub.4).sub.2 so as to have nearly the same structure as the BaTiO.sub.3 and SrTiO.sub.3 powders. The aimed ceramic is produced by compacting the powder composition into a green body and sintering it at 1300.degree.-1400.degree. C.
    • 为了制备半导体且足够高的击穿电压并且在室温下具有低电阻率和高正电阻系数(PTC)的改性钛酸钡陶瓷,本发明提供一种粉末组合物,其包含(A)基本混合物 包括45-85mol%的BaTiO 3粉末,1-20mol%的SrTiO 3粉末,5-20mol%的CaTiO 3粉末和1-20mol%的PbTiO 3粉末,(B)掺杂元素的源如Nb ,Sb,Y,La或Ce,以形成陶瓷半导体,(C)Mn的源如MnC 2 O 4和/或Cu源如CuO,使得Mn和Cu的总量不大于0.06mol 基于混合物(A)的量,基于混合物的量(A),Mn的量不大于0.025mol%,(D)SiO 2为0.1-2.0mol%,基于混合物(A)的量 )。 通过煅烧BaTiO(C2O4)2和SrTiO(C2O4)2分别制备了BaTiO3粉末和SrTiO3粉末,在这些粉末中,非常细的初级颗粒聚集形成多孔和粗糙的二次颗粒(约100-200μm) )。 PbTiO 3粉末可以通过煅烧PbTiO(C 2 O 4)2来制备,以具有与BaTiO 3和SrTiO 3粉末几乎相同的结构。 目标陶瓷通过将粉末组合物压实成生坯并在1300-140℃下烧结而制备。