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1. 发明授权

US08378674B2 Magnetic field detection device 有权
标题翻译：磁场检测装置
公开(公告)号：US08378674B2
公开(公告)日：2013-02-19
申请号：US12601098
申请日：2008-05-27
申请人： Taisuke Furukawa , Takeharu Kuroiwa , Shingo Tomohisa , Takashi Takenaga , Masakazu Taki , Hiroshi Takada , Yuji Abe
发明人： Taisuke Furukawa , Takeharu Kuroiwa , Shingo Tomohisa , Takashi Takenaga , Masakazu Taki , Hiroshi Takada , Yuji Abe
IPC分类号： G01R33/02
CPC分类号： G01R33/093 , B82Y25/00 , G01R33/072 , G01R33/091
摘要： A magnetic field detection device including a magnetic body (magnetic flux guide) provided for adjusting a magnetic field to be applied to a magneto-resistance element. A shape of an on-substrate magnetic body in plan view is a tapered shape on one end portion side and a substantially funnel shape on another end portion side opposite the one end portion, the another end portion being larger in width than the one end portion, and a magneto-resistance element is disposed in front of an output-side end portion. In the on-substrate magnetic body, a contour of a tapered portion is not linear like a funnel, but has a curved shape in which a first curved portion protruding outward with a gentle curvature and a second curved portion protruding inward with a curvature similar to that of the first curved portion are continuously formed.
摘要翻译：一种磁场检测装置，包括用于调整施加到磁阻元件的磁场的磁体（磁通量）。平面图中的基板上磁体的形状在一端部侧呈锥形，在与一端部相反的另一端部侧呈大致漏斗状，另一端部宽度大于一端部并且在输出侧端部的前方配置有磁阻元件。在基板上的磁性体中，锥形部分的轮廓不像漏斗那样呈直线状，而是具有弯曲形状，其中第一弯曲部分以柔和曲率向外突出，第二弯曲部分向内突出，曲率类似于第一弯曲部分的连续形成。

2. 发明申请

US20110233699A1 MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY DEVICE 失效
标题翻译：磁记忆元件和磁记忆装置
公开(公告)号：US20110233699A1
公开(公告)日：2011-09-29
申请号：US13073552
申请日：2011-03-28
申请人： Takashi Takenaga , Taisuke Furukawa , Takeharu Kuroiwa
发明人： Takashi Takenaga , Taisuke Furukawa , Takeharu Kuroiwa
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1657 , G11C11/1659 , H01L27/0207 , H01L43/08
摘要： Magnetic memory element includes recording layer changing magnetization direction by external magnetic field, having easy-axis and hard-axis crossing easy-axis, first conductive layer forming magnetic field in direction crossing direction of easy-axis at layout position of recording layer, second conductive layer extending in direction crossing first conductive layer and forming magnetic field in direction crossing direction of hard-axis at layout position of recording layer. Recording layer has at least part between first conductive layer and second conductive layer. Planar-shaped recording layer viewed from direction where first and second conductive layers and recording layer are laminated, has portion located on side and other portion located on other side, with respect to virtual first center line of first conductive layer along direction where first conductive layer extends viewed from lamination direction. Area of portion viewed from lamination direction is less than or equal to one-third area of other portion.
摘要翻译：磁存储元件包括通过外部磁场改变磁化方向的记录层，具有易于轴和硬轴交叉的容易轴，第一导电层在记录层的布局位置的易轴方向交叉方向上形成磁场，第二导电层在与第一导电层交叉的方向上延伸，并且在记录层的布置位置处在硬轴的交叉方向上形成磁场。记录层在第一导电层和第二导电层之间具有至少一部分。从第一和第二导电层和记录层被层叠的方向观察的平面状记录层相对于第一导电层的虚拟第一中心线位于侧面和位于另一侧的其它部分，沿着第一导电层从层叠方向观察。从层叠方向观察的部分的面积小于或等于其他部分的三分之一面积。

3. 发明授权

US07733210B2 Magnetic field detector and manufacturing method thereof 有权
标题翻译：磁场检测器及其制造方法
公开(公告)号：US07733210B2
公开(公告)日：2010-06-08
申请号：US11378645
申请日：2006-03-20
申请人： Taisuke Furukawa , Hiroshi Kobayashi , Takashi Takenaga , Takeharu Kuroiwa , Beysen Sadeh , Masakazu Taki
发明人： Taisuke Furukawa , Hiroshi Kobayashi , Takashi Takenaga , Takeharu Kuroiwa , Beysen Sadeh , Masakazu Taki
IPC分类号： H01L43/00
CPC分类号： G01R33/093 , B82Y25/00
摘要： A magnetic field detector includes: a magnet; a detecting magnetic resistance element having a layer structure containing a ferromagnetic layer, the resistance being changed when a direction of magnetization of the ferromagnetic layer is changed; and a reference magnetic resistance element having substantially the same layer structure as that of the detecting magnetic resistance element. A magnetic field, the magnetic intensity of which is higher than the saturation magnetic field, is impressed by the magnet in a direction which is sensed by the ferromagnetic layer of the reference magnetic resistance element.
摘要翻译：磁场检测器包括：磁体; 具有包含铁磁层的层结构的检测磁阻元件，所述电阻在所述铁磁层的磁化方向改变时改变; 以及具有与检测用磁阻元件基本相同的层结构的基准磁阻元件。其磁强度高于饱和磁场的磁场被磁铁施加在由参考磁阻元件的铁磁层感测的方向上。

4. 发明授权

US07508203B2 Magnetic field detector, and current detection device, position detection device and rotation detection devices using the magnetic field detector 有权
标题翻译：磁场检测器，电流检测装置，位置检测装置和使用磁场检测器的旋转检测装置
公开(公告)号：US07508203B2
公开(公告)日：2009-03-24
申请号：US12098291
申请日：2008-04-04
申请人： Takashi Takenaga , Hiroshi Kobayashi , Takeharu Kuroiwa , Sadeh Beysen , Taisuke Furukawa
发明人： Takashi Takenaga , Hiroshi Kobayashi , Takeharu Kuroiwa , Sadeh Beysen , Taisuke Furukawa
IPC分类号： G01R33/09 , G01R33/05 , G01B7/30
CPC分类号： G01R33/09 , B82Y25/00 , G01R15/205 , G01R33/093
摘要： A magnetic field detector having a reference magnetoresistive element and a magnetic field detecting magnetoresistive element. The reference magnetoresistive element and the magnetic field detecting magnetoresistive element each has a stack structure including an antiferromagnetic layer, a fixed layer of a ferromagnetic material with the direction of magnetization fixed by the antiferromagnetic layer, a nonmagnetic layer, and a free layer of a ferromagnetic material with the direction of magnetization adapted to be changed by an external magnetic field. The reference magnetoresistive element is such that the direction of magnetization of the fixed layer and the direction of magnetization of the free layer in the nonmagnetic field are parallel or antiparallel to each other, and the magnetic field detecting magnetoresistive element is such that the direction of magnetization of the fixed layer and the direction of magnetization of the free layer in the nonmagnetic field are different from each other. Thus, it is possible to provide a magnetic field detector capable of singly calibrating the sensitivity and the resolution of the detector whenever required.
摘要翻译：具有参考磁阻元件和磁场检测磁阻元件的磁场检测器。参考磁阻元件和磁场检测磁阻元件各自具有堆叠结构，其包括反铁磁层，铁磁材料的固定层，其具有由反铁磁层固定的磁化方向，非磁性层和铁磁性层的自由层具有适于由外部磁场改变的磁化方向的材料。参考磁阻元件使得固定层的磁化方向和非磁场中的自由层的磁化方向彼此平行或反平行，并且磁场检测磁阻元件使得磁化方向和非磁场中的自由层的磁化方向彼此不同。因此，可以提供能够在需要时单独地校准检测器的灵敏度和分辨率的磁场检测器。

5. 发明申请

US20070165334A1 Magnetic field detector, current detector, position detector and rotation detector employing it 有权
标题翻译：磁场检测器，电流检测器，位置检测器和使用它的旋转检测器
公开(公告)号：US20070165334A1
公开(公告)日：2007-07-19
申请号：US10589246
申请日：2004-09-22
申请人： Takashi Takenaga , Hiroshi Kobayashi , Takeharu Kuroiwa , Sadeh Beysen , Taisuke Furukawa
发明人： Takashi Takenaga , Hiroshi Kobayashi , Takeharu Kuroiwa , Sadeh Beysen , Taisuke Furukawa
IPC分类号： G11B5/33
CPC分类号： G01R33/09 , B82Y25/00 , G01R15/205 , G01R33/093
摘要： A magnetic field detector having a reference magnetoresistive element and a magnetic field detecting magnetoresistive element. The reference magnetoresistive element and the magnetic field detecting magnetoresistive element each has a stack structure including an antiferromagnetic layer, a fixed layer of a ferromagnetic material with the direction of magnetization fixed by the antiferromagnetic layer, a nonmagnetic layer, and a free layer of a ferromagnetic material with the direction of magnetization adapted to be changed by an external magnetic field. The reference magnetoresistive element is such that the direction of magnetization of the fixed layer and the direction of magnetization of the free layer in the nonmagnetic field are parallel or antiparallel to each other, and the magnetic field detecting magnetoresistive element is such that the direction of magnetization of the fixed layer and the direction of magnetization of the free layer in the nonmagnetic field are different from each other. Thus, it is possible to provide a magnetic field detector capable of singly calibrating the sensitivity and the resolution of the detector whenever required.
摘要翻译：具有参考磁阻元件和磁场检测磁阻元件的磁场检测器。参考磁阻元件和磁场检测磁阻元件各自具有堆叠结构，其包括反铁磁层，铁磁材料的固定层，其具有由反铁磁层固定的磁化方向，非磁性层和铁磁性自由层具有适于由外部磁场改变的磁化方向的材料。参考磁阻元件使得固定层的磁化方向和非磁场中的自由层的磁化方向彼此平行或反平行，并且磁场检测磁阻元件使得磁化方向和非磁场中的自由层的磁化方向彼此不同。因此，可以提供能够在需要时单独地校准检测器的灵敏度和分辨率的磁场检测器。

6. 发明申请

US20100270633A1 NONVOLATILE MEMORY DEVICE 有权
标题翻译：非易失性存储器件
公开(公告)号：US20100270633A1
公开(公告)日：2010-10-28
申请号：US12830954
申请日：2010-07-06
申请人： Takashi Takenaga , Takeharu Kuroiwa , Taisuke Furukawa , Masakazu Taki
发明人： Takashi Takenaga , Takeharu Kuroiwa , Taisuke Furukawa , Masakazu Taki
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/155 , G11C11/161 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1675 , H01F10/132 , H01F10/3254 , H01F10/3272 , H01L27/228
摘要： Ferromagnetic layers have magnetizations oriented to such directions as to cancel each other, so that the net magnetization of the ferromagnetic layers is substantially zero. That is, the ferromagnetic layers are exchange-coupled with a nonmagnetic layer interposed therebetween, thereby forming an SAF structure. Since the net magnetization of the ferromagnetic layers forming the SAF structure is substantially zero, the magnetization of a recording layer is determined by the magnetization of a ferromagnetic layer. Therefore, the ferromagnetic layer is made of a CoFeB alloy having high uniaxial magnetic anisotropy, and the ferromagnetic layers are made of a CoFe alloy having a high exchange-coupling force.
摘要翻译：铁磁层具有朝向彼此抵消的方向取向的磁化，使得铁磁层的净磁化基本上为零。也就是说，铁磁层与插入其间的非磁性层交换耦合，从而形成SAF结构。由于形成SAF结构的铁磁层的净磁化基本上为零，记录层的磁化由铁磁层的磁化决定。因此，铁磁层由具有高的单轴磁各向异性的CoFeB合金制成，铁磁层由具有高交换耦合力的CoFe合金制成。

7. 发明申请

US20100156405A1 MAGNETIC FIELD DETECTION DEVICE 有权
标题翻译：磁场检测装置
公开(公告)号：US20100156405A1
公开(公告)日：2010-06-24
申请号：US12601098
申请日：2008-05-27
申请人： Taisuke Furukawa , Takeharu Kuroiwa , Shingo Tomohisa , Takashi Takenaga , Masakazu Taki , Hiroshi Takada , Yuji Abe
发明人： Taisuke Furukawa , Takeharu Kuroiwa , Shingo Tomohisa , Takashi Takenaga , Masakazu Taki , Hiroshi Takada , Yuji Abe
IPC分类号： G01R33/02
CPC分类号： G01R33/093 , B82Y25/00 , G01R33/072 , G01R33/091
摘要： A magnetic field detection device including a magnetic body (magnetic flux guide) provided for adjusting a magnetic field to be applied to a magneto-resistance element. A shape of an on-substrate magnetic body in plan view is a tapered shape on one end portion side and a substantially funnel shape on another end portion side opposite the one end portion, the another end portion being larger in width than the one end portion, and a magneto-resistance element is disposed in front of an output-side end portion. In the on-substrate magnetic body, a contour of a tapered portion is not linear like a funnel, but has a curved shape in which a first curved portion protruding outward with a gentle curvature and a second curved portion protruding inward with a curvature similar to that of the first curved portion are continuously formed.
摘要翻译：一种磁场检测装置，包括用于调整施加到磁阻元件的磁场的磁体（磁通量）。平面图中的基板上磁体的形状在一端部侧呈锥形，在与一端部相反的另一端部侧呈大致漏斗状，另一端部宽度大于一端部并且在输出侧端部的前方配置有磁阻元件。在基板上的磁性体中，锥形部分的轮廓不像漏斗那样呈直线状，而是具有弯曲形状，其中第一弯曲部分以柔和曲率向外突出，第二弯曲部分向内突出，曲率类似于第一弯曲部分的连续形成。

8. 发明授权

US07983075B2 Nonvolatile memory device 有权
标题翻译：非易失性存储器件
公开(公告)号：US07983075B2
公开(公告)日：2011-07-19
申请号：US12830954
申请日：2010-07-06
申请人： Takashi Takenaga , Takeharu Kuroiwa , Taisuke Furukawa , Masakazu Taki
发明人： Takashi Takenaga , Takeharu Kuroiwa , Taisuke Furukawa , Masakazu Taki
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/155 , G11C11/161 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1675 , H01F10/132 , H01F10/3254 , H01F10/3272 , H01L27/228
摘要： Ferromagnetic layers have magnetizations oriented to such directions as to cancel each other, so that the net magnetization of the ferromagnetic layers is substantially zero. That is, the ferromagnetic layers are exchange-coupled with a nonmagnetic layer interposed therebetween, thereby forming an SAF structure. Since the net magnetization of the ferromagnetic layers forming the SAF structure is substantially zero, the magnetization of a recording layer is determined by the magnetization of a ferromagnetic layer. Therefore, the ferromagnetic layer is made of a CoFeB alloy having high uniaxial magnetic anisotropy, and the ferromagnetic layers are made of a CoFe alloy having a high exchange-coupling force.
摘要翻译：铁磁层具有朝向彼此抵消的方向取向的磁化，使得铁磁层的净磁化基本上为零。也就是说，铁磁层与插入其间的非磁性层交换耦合，从而形成SAF结构。由于形成SAF结构的铁磁层的净磁化基本上为零，记录层的磁化由铁磁层的磁化决定。因此，铁磁层由具有高的单轴磁各向异性的CoFeB合金制成，铁磁层由具有高交换耦合力的CoFe合金制成。

9. 发明授权

US07932573B2 Magnetic memory element and magnetic memory device 有权
标题翻译：磁存储元件和磁存储器件
公开(公告)号：US07932573B2
公开(公告)日：2011-04-26
申请号：US12427024
申请日：2009-04-21
申请人： Hiroshi Takada , Takashi Takenaga , Takeharu Kuroiwa , Taisuke Furukawa
发明人： Hiroshi Takada , Takashi Takenaga , Takeharu Kuroiwa , Taisuke Furukawa
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , H01L43/08
摘要： A magnetic memory element having a layer structure containing a fixing layer (pinned layer: PL) having a magnetization direction fixed unidirectionally, a nonmagnetic dielectric layer (TN1) in contact with the fixing layer (PL), and a memory layer (free layer: FL) having a first surface in contact with the nonmagnetic dielectric layer (TN1) and a second surface on the opposite to the first surface, the magnetization direction of the memory layer (FL) having a reversible magnetization direction in response to the current through the layer structure. The entire surface of the first surface of the memory layer (FL) is covered with the nonmagnetic dielectric layer (TN1) and in the joint surface of the nonmagnetic dielectric layer (TN1) and the fixing layer (PL), the first surface of the nonmagnetic dielectric layer (TN1) is exposed in a manner of surrounding the joint surface.
摘要翻译：具有层状结构的磁记忆元件，其具有单向固定磁化方向的固定层（被钉扎层：PL），与固定层（PL）接触的非磁性介电层（TN1），以及存储层（自由层： FL），其具有与非磁性介电层（TN1）接触的第一表面和与第一表面相反的第二表面，存储层（FL）的磁化方向响应于通过所述第一表面的电流而具有可逆磁化方向层结构。存储层（FL）的第一表面的整个表面被非磁性介电层（TN1）覆盖，并且在非磁性介电层（TN1）和固定层（PL）的接合表面中，第一表面非磁性介电层（TN1）以包围接合面的方式露出。

10. 发明授权

US07786725B2 Magnetic field detection apparatus for detecting an external magnetic field applied to a magnetoresistance effect element, and method of adjusting the same 有权
标题翻译：用于检测施加到磁阻效应元件的外部磁场的磁场检测装置及其调整方法
公开(公告)号：US07786725B2
公开(公告)日：2010-08-31
申请号：US11509609
申请日：2006-08-25
申请人： Taisuke Furukawa , Hiroshi Kobayashi , Takashi Takenaga , Takeharu Kuroiwa , Sadeh Beysen , Masakazu Taki
发明人： Taisuke Furukawa , Hiroshi Kobayashi , Takashi Takenaga , Takeharu Kuroiwa , Sadeh Beysen , Masakazu Taki
IPC分类号： G01B7/30
CPC分类号： G01R33/093 , B82Y25/00 , G01R15/205
摘要： A magnetic field detection apparatus capable of changing the detection range and detection sensitivity as desired for a specific application is disclosed. A magnetoresistance effect element is applied a bias magnetic field and an external magnetic field. The bias magnetic field and the external magnetic field are generated on the same straight line, and therefore the bias magnetic field functions to hamper the external magnetic field applied to the magnetoresistance effect element. Thus, the magnetization of the free layer of the magnetoresistance effect element is suppressed, and the rotational angle of the magnetized vector is reduced. As a result, the characteristic of the resistance value of the magnetoresistance effect element to the external magnetic field is shifted by an amount equivalent to the bias magnetic field.
摘要翻译：公开了能够根据具体应用需要改变检测范围和检测灵敏度的磁场检测装置。磁阻效应元件施加偏置磁场和外部磁场。在相同的直线上产生偏置磁场和外部磁场，因此偏置磁场用于阻止施加到磁阻效应元件的外部磁场。因此，磁阻效应元件的自由层的磁化被抑制，并且磁化矢量的旋转角度减小。结果，磁阻效应元件对外部磁场的电阻值的特性偏移与偏置磁场相当的量。

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