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1. 发明授权

US08324033B2 TFT array substrate and manufacturing method thereof 有权
标题翻译： TFT阵列基板及其制造方法
公开(公告)号：US08324033B2
公开(公告)日：2012-12-04
申请号：US11958613
申请日：2007-12-18
申请人： Zhangtao Wang , Haijun Qiu , Tae Yup Min , Seung Moo Rim
发明人： Zhangtao Wang , Haijun Qiu , Tae Yup Min , Seung Moo Rim
IPC分类号： H01L21/00
CPC分类号： H01L29/66765 , H01L27/1214 , H01L27/1248 , H01L27/1288
摘要： A TFT array substrate and a manufacturing method thereof, where the TFT array substrate includes a substrate; a gate line and a gate electrode integrated therewith, which are covered by a gate insulating layer, a semiconductor layer, and a ohmic contact layer sequentially. An insulating layer is formed on the resulting substrate and on both sides of the gate line and the gate electrode, the gate insulating layer, the semiconductor layer, and the ohmic contact layer. A trench is then formed in the ohmic contact layer to divide the ohmic contact layer over the semiconductor layer. A data line and first and second source/drain electrodes are then formed on the insulating layer and the ohmic contact layer.
摘要翻译： TFT阵列基板及其制造方法，其中，TFT阵列基板包括基板; 栅极线和栅极电极，其被栅极绝缘层，半导体层和欧姆接触层依次覆盖。在所得到的衬底上以及栅极线和栅电极，栅绝缘层，半导体层和欧姆接触层的两侧上形成绝缘层。然后在欧姆接触层中形成沟槽，以将半导体层上的欧姆接触层分开。然后在绝缘层和欧姆接触层上形成数据线和第一和第二源极/漏极。

2. 发明授权

US07948570B2 Thin film transistor array substrate and manufacturing method thereof 有权
标题翻译：薄膜晶体管阵列基板及其制造方法
公开(公告)号：US07948570B2
公开(公告)日：2011-05-24
申请号：US12270206
申请日：2008-11-13
申请人： Zhangtao Wang , Haijun Qiu , Tae Yup Min
发明人： Zhangtao Wang , Haijun Qiu , Tae Yup Min
IPC分类号： G02F1/136
CPC分类号： H01L27/124 , G02F1/1368 , G02F2001/136236 , H01L27/1288
摘要： A thin film transistor (TFT) array substrate for a liquid crystal display comprises a gate line and a data line formed in a display region, a gate connecting line and a data connecting line formed in a PAD region, and a TFT formed at an intersection between the gate line and the data line. The TFT comprises a gate electrode on a base substrate, a gate insulating layer on the gate electrode, a semiconductor layer on the gate insulating layer, a doped semiconductor layer on the semiconductor layer, and a source electrode and a drain electrode that are on the doped semiconductor layer, and a TFT channel is defined in the semiconductor layer between the source electrode and the drain electrode. The array substrate further comprises a passivation layer that is formed on the source electrode and the drain electrode and a pixel electrode, a portion of which is formed under the drain electrode and connected with the drain electrode.
摘要翻译：用于液晶显示器的薄膜晶体管（TFT）阵列基板包括形成在PAD区域中的显示区域，栅极连接线和数据连接线上形成的栅极线和数据线，以及形成在交叉点处的TFT 在栅极线和数据线之间。 TFT包括在基底基板上的栅极电极，栅电极上的栅极绝缘层，栅极绝缘层上的半导体层，半导体层上的掺杂半导体层，以及源电极和漏电极掺杂半导体层，并且在源电极和漏电极之间的半导体层中限定TFT沟道。阵列基板还包括形成在源电极和漏电极上的钝化层和像素电极，其一部分形成在漏电极下方并与漏电极连接。

3. 发明申请

US20100270556A1 TFT LCD ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF 有权
标题翻译： TFT液晶阵列基板及其制造方法
公开(公告)号：US20100270556A1
公开(公告)日：2010-10-28
申请号：US12830831
申请日：2010-07-06
申请人： Zhangtao Wang , Haijun Qiu , Tae Yup Min , Seung Moo Rim
发明人： Zhangtao Wang , Haijun Qiu , Tae Yup Min , Seung Moo Rim
IPC分类号： H01L33/08 , H01L21/28
CPC分类号： H01L27/1248 , H01L27/1288
摘要： A TFT LCD array substrate and a manufacturing method thereof. The TFT LCD array substrate comprises a substrate. A gate line and a gate electrode that is formed integrally with the gate line are formed on the substrate. A first insulating layer and a semiconductor layer are formed sequentially on the gate line and the gate electrode. A second insulting layer covers sidewalls of the gate line and the gate electrode, the first insulating layer, and the semiconductor layer. An etching stop layer is formed on the semiconductor layer and exposes a part of the semiconductor layer on both sides of the etching stop layer. The TFT LCD of the present invention can be manufactured with a four-mask process.
摘要翻译：一种TFT LCD阵列基板及其制造方法。 TFT LCD阵列基板包括基板。在基板上形成与栅极线一体形成的栅极线和栅电极。在栅极线和栅电极上依次形成第一绝缘层和半导体层。第二绝缘层覆盖栅极线和栅电极，第一绝缘层和半导体层的侧壁。在半导体层上形成蚀刻停止层，在蚀刻停止层的两侧露出半导体层的一部分。本发明的TFT LCD可以用四掩模工艺制造。

4. 发明授权

US06449026B1 Fringe field switching liquid crystal display and method for manufacturing the same 有权
标题翻译：边缘场开关液晶显示器及其制造方法
公开(公告)号：US06449026B1
公开(公告)日：2002-09-10
申请号：US09599372
申请日：2000-06-22
申请人： Tae Yup Min , Seung Jun Yi , Seung Hee Lee , In Cheol Park , Youn Hak Jeong
发明人： Tae Yup Min , Seung Jun Yi , Seung Hee Lee , In Cheol Park , Youn Hak Jeong
IPC分类号： G02F1136
CPC分类号： G02F1/134363 , G02F2001/134372
摘要： Disclosed is a fringe field switching liquid crystal display (FFS-LCD) and a method for manufacturing the same. The FFS-LCD comprises: a lower substrate; a plurality of gate bus lines extending along a selected direction on the lower substrate; a plurality of data bus lines disposed on the lower substrate in a manner such that they are crossed with the plurality of gate bus lines, for defining a unit pixel; a gate insulating film for insulating the gate bus lines and the data bus lines from each other; a thin film transistor located at a place where the gate bus lines and the data bus lines are crossed with each other; a pixel electrode formed on the gate insulating film, brought into contact with the thin film transistor and disposed in a space of the unit pixel; a counter electrode overlapped on the pixel electrode, the counter electrode cooperating with the pixel electrode for forming a fringe field which actuates all liquid crystal molecules existing on the pixel electrode and the counter electrode; and a passivation layer intervened between the pixel electrode and the counter electrode, wherein the pixel electrode and the counter electrode are made from a transparent conductive material and the plurality of gate bus lines are made as a metal film including aluminum.
摘要翻译：公开了一种边缘场切换液晶显示器（FFS-LCD）及其制造方法。 FFS-LCD包括：下基板; 沿着所述下基板上的选定方向延伸的多个栅极总线; 多个数据总线，以与所述多个栅极总线交叉的方式设置在所述下基板上，用于限定单位像素; 栅极绝缘膜，用于使栅极总线和数据总线彼此绝缘; 位于栅极总线和数据总线彼此交叉的位置处的薄膜晶体管; 形成在所述栅极绝缘膜上的像素电极，与所述薄膜晶体管接触并设置在所述单位像素的空间中; 对置电极，重叠在像素电极上，对置电极与像素电极配合，形成用于激活存在于像素电极和对电极上的所有液晶分子的条纹场; 以及介于像素电极和对电极之间的钝化层，其中像素电极和对电极由透明导电材料制成，并且多个栅极总线线制成包括铝的金属膜。

5. 发明授权

US08294153B2 TFT-LCD pixel unit and method for manufacturing the same 有权
标题翻译： TFT-LCD像素单元及其制造方法
公开(公告)号：US08294153B2
公开(公告)日：2012-10-23
申请号：US13102164
申请日：2011-05-06
申请人： Haijun Qiu , Zhangtao Wang , Tae Yup Min , Xu Chen
发明人： Haijun Qiu , Zhangtao Wang , Tae Yup Min , Xu Chen
IPC分类号： H01L33/62
CPC分类号： H01L27/124 , H01L27/1214 , H01L27/1288
摘要： A thin film transistor liquid crystal display (TFT-LCD) pixel unit and a method for manufacturing the same. The pixel unit comprises a gate line and a gate electrode formed on a substrate and a first gate insulating layer, an active layer, and a doped layer that are sequentially formed on the gate line and the gate electrode. An intercepting trench is formed on the gate line to cut off the doped layer and the active layer on the gate line. A second insulating layer covers the intercepting trench and the substrate where the gate line and the gate electrode are not formed. A pixel electrode is formed on the second insulating layer and a part of the pixel electrode overlaps one of a source and drain electrodes.
摘要翻译：薄膜晶体管液晶显示器（TFT-LCD）像素单元及其制造方法。像素单元包括形成在基板上的栅极线和栅电极以及依次形成在栅极线和栅电极上的第一栅极绝缘层，有源层和掺杂层。在栅极线上形成截止沟槽以切断栅极线上的掺杂层和有源层。第二绝缘层覆盖不形成栅极线和栅电极的截止沟槽和衬底。像素电极形成在第二绝缘层上，并且像素电极的一部分与源极和漏极之一重叠。

6. 发明授权

US08134158B2 TFT-LCD pixel unit and method for manufacturing the same 有权
标题翻译： TFT-LCD像素单元及其制造方法
公开(公告)号：US08134158B2
公开(公告)日：2012-03-13
申请号：US13007884
申请日：2011-01-17
申请人： Haijun Qiu , Zhangtao Wang , Tae Yup Min
发明人： Haijun Qiu , Zhangtao Wang , Tae Yup Min
IPC分类号： H01L33/62
CPC分类号： H01L29/78696 , H01L27/124 , H01L27/1288
摘要： A thin film transistor liquid crystal display (TFT-LCD) pixel unit and a method for manufacturing the same. The pixel unit comprises a gate line and a gate electrode formed on a substrate and a first gate insulating layer, an active layer, and a doped layer sequentially that are formed on the gate line and the gate electrode. An intercepting trench is formed on the gate line to cut off the doped layer and the active layer on the gate line. A second insulating layer covers the intercepting trench and the substrate where the gate line and the gate electrode are not formed. A pixel electrode is formed on the second insulating layer and is integrated with the second source/drain electrode.
摘要翻译：薄膜晶体管液晶显示器（TFT-LCD）像素单元及其制造方法。像素单元包括形成在基板上的栅极线和栅电极，以及顺序地形成在栅极线和栅电极上的第一栅极绝缘层，有源层和掺杂层。在栅极线上形成截止沟槽以切断栅极线上的掺杂层和有源层。第二绝缘层覆盖不形成栅极线和栅电极的截止沟槽和衬底。像素电极形成在第二绝缘层上并与第二源极/漏极集成。

7. 发明申请

US20110171767A1 MANUFACTURING METHOD FOR A THIN FILM TRANSISTOR-LIQUID CRYSTAL DISPLAY 有权
标题翻译：薄膜晶体管液晶显示器的制造方法
公开(公告)号：US20110171767A1
公开(公告)日：2011-07-14
申请号：US13069767
申请日：2011-03-23
申请人： Haijun QIU , Zhangtao Wang , Xu Chen , Tae Yup Min
发明人： Haijun QIU , Zhangtao Wang , Xu Chen , Tae Yup Min
IPC分类号： H01L33/36
CPC分类号： H01L27/1288 , G02F1/1368 , G02F2001/136231 , H01L27/1214
摘要： A pixel unit of TFT-LCD array substrate and a manufacturing method thereof is disclosed. In the manufacturing method, besides a first insulating layer and a passivation layer, a second insulating layer is adopted to cover the gate island, and forms an opening on the gate island to expose the channel region, the source region and the drain region of the TFT. A gray tone mask and a photoresist lifting-off process are utilized to perform patterning, so that the TFT-LCD array substrate can be achieved with just three masks.
摘要翻译：公开了一种TFT-LCD阵列基板的像素单元及其制造方法。在该制造方法中，除了第一绝缘层和钝化层之外，还采用第二绝缘层覆盖栅极岛，并且在栅极岛上形成开口，以露出沟道区域，源极区域和漏极区域 TFT。利用灰度色调掩模和光致抗蚀剂剥离工艺进行图案化，从而可以用三个掩模实现TFT-LCD阵列基板。

8. 发明授权

US07955911B2 TFT-LCD pixel unit and method for manufacturing the same 有权
标题翻译： TFT-LCD像素单元及其制造方法
公开(公告)号：US07955911B2
公开(公告)日：2011-06-07
申请号：US11952252
申请日：2007-12-07
申请人： Haijun Qiu , Zhangtao Wang , Tae Yup Min , Xu Chen
发明人： Haijun Qiu , Zhangtao Wang , Tae Yup Min , Xu Chen
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L27/124 , H01L27/1214 , H01L27/1288
摘要： A thin film transistor liquid crystal display (TFT-LCD) pixel unit and a method for manufacturing the same. The pixel unit comprises a gate line and a gate electrode formed on a substrate and a first gate insulating layer, an active layer, and a doped layer that are sequentially formed on the gate line and the gate electrode. An intercepting trench is formed on the gate line to cut off the doped layer and the active layer on the gate line. A second insulating layer covers the intercepting trench and the substrate where the gate line and the gate electrode are not formed. A pixel electrode is formed on the second insulating layer and a part of the pixel electrode overlaps one of a source and drain electrodes.
摘要翻译：薄膜晶体管液晶显示器（TFT-LCD）像素单元及其制造方法。像素单元包括形成在基板上的栅极线和栅电极以及依次形成在栅极线和栅电极上的第一栅极绝缘层，有源层和掺杂层。在栅极线上形成截止沟槽以切断栅极线上的掺杂层和有源层。第二绝缘层覆盖不形成栅极线和栅电极的截止沟槽和衬底。像素电极形成在第二绝缘层上，并且像素电极的一部分与源极和漏极之一重叠。

9. 发明申请

US20110108849A1 TFT-LCD PIXEL UNIT AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译： TFT-LCD像素单元及其制造方法
公开(公告)号：US20110108849A1
公开(公告)日：2011-05-12
申请号：US13007884
申请日：2011-01-17
申请人： Haijun QIU , Zhangtao WANG , Tae Yup MIN
发明人： Haijun QIU , Zhangtao WANG , Tae Yup MIN
IPC分类号： H01L33/16
CPC分类号： H01L29/78696 , H01L27/124 , H01L27/1288
摘要： A thin film transistor liquid crystal display (TFT-LCD) pixel unit and a method for manufacturing the same. The pixel unit comprises a gate line and a gate electrode formed on a substrate and a first gate insulating layer, an active layer, and a doped layer sequentially that are formed on the gate line and the gate electrode. An intercepting trench is formed on the gate line to cut off the doped layer and the active layer on the gate line. A second insulating layer covers the intercepting trench and the substrate where the gate line and the gate electrode are not formed. A pixel electrode is formed on the second insulating layer and is integrated with the second source/drain electrode.
摘要翻译：薄膜晶体管液晶显示器（TFT-LCD）像素单元及其制造方法。像素单元包括形成在基板上的栅极线和栅电极，以及顺序地形成在栅极线和栅电极上的第一栅极绝缘层，有源层和掺杂层。在栅极线上形成截止沟槽以切断栅极线上的掺杂层和有源层。第二绝缘层覆盖不形成栅极线和栅电极的截止沟槽和衬底。像素电极形成在第二绝缘层上并与第二源极/漏极集成。

10. 发明授权

US07776662B2 TFT LCD array substrate and manufacturing method thereof 有权
标题翻译： TFT LCD阵列基板及其制造方法
公开(公告)号：US07776662B2
公开(公告)日：2010-08-17
申请号：US11935002
申请日：2007-11-05
申请人： Zhangtao Wang , Haijun Qiu , Tae Yup Min , Seung Moo Rim
发明人： Zhangtao Wang , Haijun Qiu , Tae Yup Min , Seung Moo Rim
IPC分类号： H01L21/00
CPC分类号： H01L27/1248 , H01L27/1288
摘要： A TFT LCD array substrate and a manufacturing method thereof. The TFT LCD array substrate comprises a substrate. A gate line and a gate electrode that is formed integrally with the gate line are formed on the substrate. A first insulating layer and a semiconductor layer are formed sequentially on the gate line and the gate electrode. A second insulting layer covers sidewalls of the gate line and the gate electrode, the first insulating layer, and the semiconductor layer. An etching stop layer is formed on the semiconductor layer and exposes a part of the semiconductor layer on both sides of the etching stop layer. The TFT LCD of the present invention can be manufactured with a four-mask process.
摘要翻译：一种TFT LCD阵列基板及其制造方法。 TFT LCD阵列基板包括基板。在基板上形成与栅极线一体形成的栅极线和栅电极。在栅极线和栅电极上依次形成第一绝缘层和半导体层。第二绝缘层覆盖栅极线和栅电极，第一绝缘层和半导体层的侧壁。在半导体层上形成蚀刻停止层，在蚀刻停止层的两侧露出半导体层的一部分。本发明的TFT LCD可以用四掩模工艺制造。

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