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1. 发明申请

US20080103691A1 SYSTEM, METHOD AND APPARATUS FOR SEARCHING GEOGRAPHIC AREA USING PRIORITIZED SPATIAL ORDER 有权
标题翻译：使用优先空间订单搜索地理区域的系统，方法和设备
公开(公告)号：US20080103691A1
公开(公告)日：2008-05-01
申请号：US11965525
申请日：2007-12-27
申请人： Susan Chen , Clayton Barber
发明人： Susan Chen , Clayton Barber
IPC分类号： G01C21/00 , G01C21/10
CPC分类号： G01C5/005 , G01C23/00
摘要： A spatial data search method, system and apparatus for identifying particular data of significance around a reference vector through the spatial data. The method involves determining a reference vector within a spatial region for which spatial data exists, loading a portion of the spatial data including the data around the reference vector into a memory buffer, and searching the spatial data in a prioritized order. The method, system and apparatus have particular utility in searching geographic data for a terrain awareness and warning system (“TAWS”) and display in an aircraft. Embodiments of the present invention provide advantages over existing sequential and radial search methods, significantly reducing the processing and calculations required and providing faster alerts to pilots.
摘要翻译：一种用于通过空间数据识别围绕参考矢量的特定数据的空间数据搜索方法，系统和装置。该方法包括确定存在空间数据的空间区域内的参考矢量，将包括参考矢量周围的数据的空间数据的一部分加载到存储器缓冲器中，以优先顺序搜索空间数据。该方法，系统和装置在搜索地形数据的地形识别和警告系统（“TAWS”）并在飞行器中显示具有特殊的用途。本发明的实施例提供了优于现有的顺序和径向搜索方法的优点，显着地减少了所需的处理和计算，并向飞行员提供了更快的警报。

2. 发明授权

US06355575B1 Semiconductor device and method of manufacturing without damaging HSQ layer and metal pattern 有权
标题翻译：半导体器件和制造方法，不会损坏HSQ层和金属图案
公开(公告)号：US06355575B1
公开(公告)日：2002-03-12
申请号：US09575463
申请日：2000-05-22
申请人： Fei Wang , Simon S. Chan , Susan Chen
发明人： Fei Wang , Simon S. Chan , Susan Chen
IPC分类号： H01L21302
CPC分类号： H01L21/76802 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： HSQ is employed as a dielectric layer in manufacturing a high density, multi-metal layer semiconductor device. The degradation of deposited HSQ layers during formation of the semiconductor device, as from photoresist stripping using an O2-containing plasma, is avoided by forming first and second dielectric layers on the HSQ layer, forming a photoresist mask on the second dielectric layer and etching to form an opening in the second dielectric layer leaving the first dielectric layer exposed. The first dielectric layer protects the HSQ from degradation during subsequent stripping.
摘要翻译： HSQ用作制造高密度多金属层半导体器件的介电层。通过在HSQ层上形成第一和第二电介质层，在第二电介质层上形成光致抗蚀剂掩模并蚀刻到第二介电层上，避免了在形成半导体器件期间沉积的HSQ层的退化，如使用含O 2等离子体的光致抗蚀剂剥离在第二电介质层中形成开口，离开第一电介质层。第一电介质层在随后的剥离过程中保护HSQ免于降解。

3. 发明授权

US6117769A Pad structure for copper interconnection and its formation 有权
公开(公告)号：US6117769A
公开(公告)日：2000-09-12
申请号：US132562
申请日：1998-08-11
申请人： Takeshi Nogami , Susan Chen , Shekhar Pramanick
发明人： Takeshi Nogami , Susan Chen , Shekhar Pramanick
IPC分类号： H01L21/285 , H01L21/768 , H01L23/532 , H01L21/44
CPC分类号： H01L21/76846 , H01L21/2855 , H01L21/28568 , H01L21/7681 , H01L21/76843 , H01L21/76877 , H01L23/53223 , H01L23/53233 , H01L23/53238 , H01L2224/05073 , H01L2224/05187 , H01L2224/05624 , H01L2924/01079
摘要： A semiconductor device with high conductivity interconnection lines formed of high conductivity material, such as copper, is manufactured using tantalum nitride material as barrier material between an aluminum layer, such as the wire bonding layer, and the underlying high conductivity interconnection lines. The tantalum nitride material contains high nitrogen content.

4. 发明申请

US20050089490A1 Hair gels based on polymers having a low glass transition temperature 审中-公开
标题翻译：基于具有低玻璃化转变温度的聚合物的发胶
公开(公告)号：US20050089490A1
公开(公告)日：2005-04-28
申请号：US10950924
申请日：2004-09-27
申请人： Janusz Jachowicz , Jui-Chang Chuang , Roger McMullen , Susan Chen
发明人： Janusz Jachowicz , Jui-Chang Chuang , Roger McMullen , Susan Chen
IPC分类号： A61K8/81 , A61K8/85 , A61K8/87 , A61Q5/06 , A61Q5/12 , A61K7/06 , A61K7/11
CPC分类号： A61K8/8176 , A61K8/8111 , A61K8/8147 , A61K8/8152 , A61K8/85 , A61K8/87 , A61K2800/54 , A61K2800/594 , A61Q5/06 , A61Q5/12
摘要： What is described herein is a hair care composition including a water soluble or water dispersible styling polymer characterized by a glass transition temperature below room temperature, and a gel-forming polymer which has a glass transition temperature higher than or lower than room temperature.
摘要翻译：本文描述的是一种头发护理组合物，其包括以玻璃化转变温度低于室温的特征为水溶性或水分散性定型聚合物，以及玻璃化转变温度高于或低于室温的凝胶形成聚合物。

5. 发明授权

US06272314B1 Subscriber unit for beam acquisition in a satellite communication system and method therefor 有权
标题翻译：用于卫星通信系统中波束采集的用户单元及其方法
公开(公告)号：US06272314B1
公开(公告)日：2001-08-07
申请号：US09302331
申请日：1999-04-30
申请人： Thomas Peter Emmons, Jr. , Shawn Hogberg , Gerald Joseph Davieau , Jim Startup , Susan Chen
发明人： Thomas Peter Emmons, Jr. , Shawn Hogberg , Gerald Joseph Davieau , Jim Startup , Susan Chen
IPC分类号： H04Q720
CPC分类号： H04B7/18539
摘要： In a communications system, an earth-based subscriber unit (40, FIG. 1) receives at least one communications beam (50, 60, FIG. 1) transmitted from one or more moving satellite communications nodes (10, 20). The earthbased subscriber unit evaluates which communications beam should be selected based on the power received (FIG. 2, 210), Doppler frequency shift (270), link quality, (290), interference level (300), and satellite and network specific parameters (310). By considering these factors, the earth-based subscriber unit selects the communications beam (50, 60) that will provide the optimum service and reduce the likelihood that an inter-satellite hand over of the call will be required while the call is in progress.
摘要翻译：在通信系统中，地球用户单元（图1中的40）接收从一个或多个移动卫星通信节点（10,20）发送的至少一个通信波束（50,60，图1）。基于地面的用户单元基于所接收的功率（图2,210），多普勒频移（270），链路质量（290），干扰电平（300）以及卫星和网络特定参数来评估应该选择哪个通信波束（310）。通过考虑这些因素，基于地面的用户单元选择将提供最佳服务的通信波束（50,60），并减少在呼叫进行期间将需要进行通话的卫星间切换的可能性。

6. 发明授权

US6054384A Use of hard masks during etching of openings in integrated circuits for high etch selectivity 失效
标题翻译：在蚀刻集成电路中的开口处使用硬掩模以获得高蚀刻选择性
公开(公告)号：US6054384A
公开(公告)日：2000-04-25
申请号：US81196
申请日：1998-05-19
申请人： Fei Wang , Susan Chen
发明人： Fei Wang , Susan Chen
IPC分类号： H01L21/768 , H01L21/4763
CPC分类号： H01L21/7681
摘要： With the present invention, a plurality of contiguous openings within an integrated circuit are etched with high etch selectivity. The present invention includes the step of depositing a first masking layer adjacent a first opening layer. The first masking layer has a first pattern for defining a first opening in the first opening layer. The present invention also includes the step of depositing a second opening layer adjacent the first masking layer. Additionally, the present invention includes the step of depositing a second masking layer, that is comprised of a hard mask material, adjacent the second insulating layer. The second masking layer has a second pattern for defining a second opening in the second opening layer. The second pattern is aligned with the first pattern such that the first opening and the second opening are contiguous. With the second masking layer being comprised of a hard mask material, at least one of the first opening and the second opening is readily etched with an high selectivity etch process, such as a high temperature etch and/or a high polymer etch. With high etch selectivity, the present invention is especially amenable for small-geometry integrated circuit fabrication. Moreover, the present invention may be practiced to particular advantage during a dual damascene etch for a via hole and a trench line in integrated circuit metallization.
摘要翻译：利用本发明，以高蚀刻选择性蚀刻集成电路内的多个连续的开口。本发明包括沉积与第一开口层相邻的第一掩蔽层的步骤。第一掩模层具有用于限定第一开口层中的第一开口的第一图案。本发明还包括沉积与第一掩蔽层相邻的第二开口层的步骤。此外，本发明包括沉积与第二绝缘层相邻的由硬掩模材料构成的第二掩模层的步骤。第二掩模层具有用于限定第二开口层中的第二开口的第二图案。第二图案与第一图案对准，使得第一开口和第二开口是连续的。在第二掩模层由硬掩模材料构成的情况下，第一开口和第二开口中的至少一个易于用高选择性蚀刻工艺（例如高温蚀刻和/或高聚合物蚀刻）蚀刻。具有高蚀刻选择性，本发明特别适用于小几何集成电路制造。此外，本发明可以在集成电路金属化中的通孔和沟槽线的双镶嵌蚀刻期间特别有利。

7. 发明授权

US5468340A Highly selective high aspect ratio oxide etch method and products made by the process 失效
标题翻译：高选择性高纵横比氧化物蚀刻方法和由该方法制成的产品
公开(公告)号：US5468340A
公开(公告)日：1995-11-21
申请号：US159634
申请日：1993-11-30
申请人： Subhash Gupta , Susan Chen , Angela Hui
发明人： Subhash Gupta , Susan Chen , Angela Hui
IPC分类号： C23F4/00 , H01L21/28 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/768 , H01L23/522 , H01L21/00 , H05H1/00
CPC分类号： H01L21/76805 , H01L21/31116 , H01L21/76816
摘要： A method for rapid anisotropic dry etching of oxide compounds in high aspect ratio openings which etching method is highly selective to metal salicides and which method employs plasma gases of CHF.sub.3, N.sub.2 and a high flow rate of He at a high pressure and products made by the process.
摘要翻译：一种用于在高纵横比开口中快速各向异性干蚀刻氧化物化合物的方法，其蚀刻方法对金属杀锌剂具有高选择性，并且哪种方法使用CHF 3，N 2等离子体气体和高流量的He，以及由处理。

8. 发明授权

US06842428B2 Method for allocating communication network resources using adaptive demand prediction 失效
标题翻译：使用自适应需求预测分配通信网络资源的方法
公开(公告)号：US06842428B2
公开(公告)日：2005-01-11
申请号：US09756563
申请日：2001-01-08
申请人： Susan Chen , Shawn Hogberg
发明人： Susan Chen , Shawn Hogberg
IPC分类号： H04L29/06 , H04L29/08 , H04J3/16
CPC分类号： H04L67/322 , H04L29/06
摘要： A method for allocating network resources of a communication network (100) to a plurality of users is disclosed. The allocation method includes predicting figure access demand from users and making resource allocation decisions based, at least in part, on the predicted demand.
摘要翻译：公开了一种向多个用户分配通信网络（100）的网络资源的方法。分配方法包括至少部分地基于预测的需求预测来自用户的图形访问需求并进行资源分配决策。

9. 发明授权

US06294396B1 Monitoring barrier metal deposition for metal interconnect 失效
标题翻译：监测金属互连的阻隔金属沉积
公开(公告)号：US06294396B1
公开(公告)日：2001-09-25
申请号：US09461512
申请日：1999-12-14
申请人： Takeshi Nogami , Susan Chen , Imran Hashim
发明人： Takeshi Nogami , Susan Chen , Imran Hashim
IPC分类号： H01L2166
CPC分类号： G01R31/303 , G01R31/307 , G01R31/311
摘要： The barrier effectiveness of a barrier material with respect to a conductive material is evaluated by providing a silicon substrate and then etching said silicon substrate to define an opening therein. The barrier material is then deposited in the opening, followed by a deposition of the conductive material. The silicon substrate is then heated at a predetermined temperature, and reactions between the conductive material and the silicon substrate are detected using a SEM or an optical microscope.
摘要翻译：通过提供硅衬底然后蚀刻所述硅衬底以在其中限定开口来评估阻挡材料相对于导电材料的屏障效能。然后将阻挡材料沉积在开口中，随后沉积导电材料。然后将硅衬底在预定温度下加热，并且使用SEM或光学显微镜检测导电材料和硅衬底之间的反应。

10. 发明授权

US6159863A Insitu hardmask and metal etch in a single etcher 有权
标题翻译：在单一蚀刻器中进行硬化掩模和金属蚀刻
公开(公告)号：US6159863A
公开(公告)日：2000-12-12
申请号：US236025
申请日：1999-01-22
申请人： Susan Chen , Judi Quan Rizzuto , Anne E. Sanderfer
发明人： Susan Chen , Judi Quan Rizzuto , Anne E. Sanderfer
IPC分类号： H01L21/302 , C23F4/00 , H01L21/3065 , H01L21/3213 , H01L21/00
CPC分类号： C23F4/00 , H01L21/32135 , H01L21/32139
摘要： A method of manufacturing a semiconductor wafer wherein a layer of hardmask material is formed on the surface of a metal layer formed on a layer of interlayer dielectric formed on a semiconductor substrate on and in which active devices have been formed. A layer of photoresist is formed on the surface of the layer of hardmask material, patterned and developed exposing portions of the underlying layer of hardmask material. The semiconductor wafer is placed in an etched and the layer of hardmask material is etched in a first process utilizing a combination fluorine and chlorine chemistry and the metal layer is etched in a second process utilizing a combination fluorine and chlorine chemistry.
摘要翻译：一种制造半导体晶片的方法，其中在形成在已经形成有源器件的半导体衬底上的层间电介质层上形成的金属层的表面上形成硬掩模材料层。在硬掩模材料层的表面上形成一层光致抗蚀剂，对硬掩模材料的下层进行图案化和显影曝光。将半导体晶片放置在蚀刻中，并且使用氟和氯化合物的组合在第一工艺中蚀刻硬掩模材料层，并且使用氟和氯化合物的组合在第二工艺中蚀刻金属层。

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