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1. 发明申请

US20120244626A1 NANOHYBRID NITROGEN MONOXIDE DETECTING SENSOR AND A PRODUCTION METHOD THEREFOR 有权
标题翻译： NANOHYBRID NITROGEN一氧化氮检测传感器及其生产方法
公开(公告)号：US20120244626A1
公开(公告)日：2012-09-27
申请号：US13265095
申请日：2010-03-16
申请人： Eunhae Koo , Sung-ho Yoon , Jong-chul Lee , Jong-hee Kim
发明人： Eunhae Koo , Sung-ho Yoon , Jong-chul Lee , Jong-hee Kim
IPC分类号： G01N21/64 , B82Y15/00
CPC分类号： G01N21/6489 , G01N33/18 , G01N33/1826 , G01N2021/6432 , Y10S977/70 , Y10S977/773 , Y10S977/774 , Y10T436/17 , Y10T436/177692
摘要： The present invention provides a nanohybrid type nitrogen monoxide detecting sensor and a production method therefor in which the nanohybrid type nitrogen monoxide detecting sensor includes a fluorescent semiconducting quantum dot and a transition metal compound.Employing a nanohybrid structure including semiconducting quantum dot nano-particles combined with a molecule recognizer selectively looming a bonding to nitrogen monoxide, the nitrogen monoxide detecting sensor is enabled to detect an infinitesimal amount of nitrogen monoxide by bringing about photoluminescence upon detection of nitrogen monoxide.
摘要翻译：本发明提供一种纳米杂化型一氧化氮检测传感器及其制造方法，其中纳米杂交型一氧化氮检测传感器包括荧光半导体量子点和过渡金属化合物。采用纳米杂交结构，包括与分子识别器结合的半导体量子点纳米颗粒选择性地与一氧化氮结合，一氧化氮检测传感器能够通过在检测到一氧化氮时产生光致发光来检测无限量的一氧化氮。

2. 发明申请

US20100119828A1 SPHERICAL ASSEMBLY PARTICLE COMPOSITION OF CUPROUS OXIDE AND PREPARATION METHOD THEREOF 有权
标题翻译：氧化丙烯的球形组装颗粒组合物及其制备方法
公开(公告)号：US20100119828A1
公开(公告)日：2010-05-13
申请号：US12452794
申请日：2008-06-25
申请人： Woo-Ram Lee , Sang-Ho Kim , Sung-Ho Yoon
发明人： Woo-Ram Lee , Sang-Ho Kim , Sung-Ho Yoon
IPC分类号： C01G3/02 , B32B5/00
CPC分类号： C01G3/02 , B01J23/72 , B01J35/0013 , B01J35/08 , B01J37/16 , B82Y30/00 , C01P2002/72 , C01P2004/03 , C01P2004/04 , C01P2004/32 , C01P2004/50 , C01P2004/52 , C01P2004/61 , C01P2004/62 , H01L31/0328 , H01L31/035281 , Y02E10/50 , Y10T428/2991 , Y10T428/2998
摘要： A Cu2O spherical assembly particle composition is composed of Cu2O spherical assembly particles, each of which is formed by agglomerating a plurality of Cu2O ultrafine particles that have an average diameter in the range from 1 to 100 nm and a standard deviation on the diameter in the range from 0 to 10%. The Cu2O spherical assembly particles have an average diameter in the range from 0.1 to 10 μm and a standard deviation on the diameter in the range from 0 to 40%. This Cu2O spherical assembly particle composition is composed of Cu2O assembly particles with excellent uniformity, so it shows excellent properties such as realizing a good electric conductivity during a curing process for wiring. Accordingly, the spherical Cu2O assembly particle composition may be usefully used as precursors for solar energy conversion, magnetic storage medium, catalyst, gas sensor, and copper wire formation.
摘要翻译： Cu2O球形组件颗粒组合物由Cu2O球形组件颗粒组成，每个颗粒通过使平均直径在1至100nm范围内的多个Cu 2 O超细颗粒聚集而形成，并且在该范围内的直径的标准偏差从0到10％。 Cu2O球形组件颗粒的平均直径在0.1至10μm的范围内，直径的标准偏差在0至40％的范围内。该Cu 2 O球形组合物颗粒组合物由均匀性良好的Cu 2 O组合颗粒组成，因此在布线固化过程中实现良好的导电性。因此，球形Cu 2 O组合粒子组合物可以有用地用作太阳能转换，磁存储介质，催化剂，气体传感器和铜线形成的前体。

3. 发明授权

US06818569B2 Method of fabricating annealed wafer 有权
标题翻译：制造退火晶圆的方法
公开(公告)号：US06818569B2
公开(公告)日：2004-11-16
申请号：US10323733
申请日：2002-12-20
申请人： Young-Hee Mun , Gun Kim , Sung-Ho Yoon
发明人： Young-Hee Mun , Gun Kim , Sung-Ho Yoon
IPC分类号： H01L2126
CPC分类号： H01L21/324 , H01L21/3221
摘要： A method of fabricating an annealed wafer of high quality by forming a defect-free active region of a device and controlling an irregular resistivity characteristic. The method includes a first annealing step of pre-heating a silicon wafer at a temperature of about 500° C. in a furnace in an ambience of a gas selected from the group consisting of Ar, N2 and an inert gas including Ar and N2; a second annealing step of changing the ambience of the gas into a 100% H2 gas ambience, increasing the temperature to 850° C.-1,150° C., and carrying out annealing for about an hour by maintaining the increased temperature; a third annealing step of changing the ambience of the gas into a 100% Ar gas ambience, increasing the temperature to about 1,200° C., and carrying out annealing for about an hour while the temperature of about 1,200° C. is maintained; and a temperature dropping step of decreasing the temperature in the furnace below about 500° C.
摘要翻译：通过形成器件的无缺陷有源区域并控制不规则电阻率特性来制造高质量的退火晶片的方法。该方法包括第一退火步骤，在选自Ar，N 2和包括Ar和N 2的惰性气体的气体的氛围下，在炉中在约500℃的温度下预热硅晶片; 将气体的气氛改变为100％H2气氛的第二退火步骤，将温度升高至850℃-1.150℃，并通过维持升高的温度进行约1小时的退火; 将气体的气氛改变为100％Ar气体环境的第三退火步骤，将温度升高至约1200℃，并且在保持约1200℃的温度下进行约1小时的退火; 以及降低炉内温度低于约500℃的降温步骤。

4. 发明授权

US08343454B2 Spherical assembly particle composition of cuprous oxide and preparation method thereof 有权
标题翻译：氧化亚铜的球形组装颗粒组成及其制备方法
公开(公告)号：US08343454B2
公开(公告)日：2013-01-01
申请号：US12452794
申请日：2008-06-25
申请人： Woo-Ram Lee , Sang-Ho Kim , Sung-Ho Yoon
发明人： Woo-Ram Lee , Sang-Ho Kim , Sung-Ho Yoon
IPC分类号： C01G3/00
CPC分类号： C01G3/02 , B01J23/72 , B01J35/0013 , B01J35/08 , B01J37/16 , B82Y30/00 , C01P2002/72 , C01P2004/03 , C01P2004/04 , C01P2004/32 , C01P2004/50 , C01P2004/52 , C01P2004/61 , C01P2004/62 , H01L31/0328 , H01L31/035281 , Y02E10/50 , Y10T428/2991 , Y10T428/2998
摘要： A Cu2O spherical assembly particle composition is composed of Cu2O spherical assembly particles, each of which is formed by agglomerating a plurality of Cu2O ultrafine particles that have an average diameter in the range from 1 to 100 nm and a standard deviation on the diameter in the range from 0 to 10%. The Cu2O spherical assembly particles have an average diameter in the range from 0.1 to 10 μm and a standard deviation on the diameter in the range from 0 to 40%. This Cu2O spherical assembly particle composition is composed of Cu2O assembly particles with excellent uniformity, so it shows excellent properties such as realizing a good electric conductivity during a curing process for wiring. Accordingly, the spherical Cu2O assembly particle composition may be usefully used as precursors for solar energy conversion, magnetic storage medium, catalyst, gas sensor, and copper wire formation.
摘要翻译： Cu2O球形组件颗粒组合物由Cu2O球形组件颗粒组成，每个颗粒通过使平均直径在1至100nm范围内的多个Cu 2 O超细颗粒聚集而形成，并且在该范围内的直径的标准偏差从0到10％。 Cu2O球形组件颗粒的平均直径在0.1至10μm的范围内，直径的标准偏差在0至40％的范围内。该Cu 2 O球形组合物颗粒组合物由均匀性良好的Cu 2 O组合颗粒组成，因此在布线固化过程中实现良好的导电性。因此，球形Cu 2 O组合粒子组合物可以有用地用作太阳能转换，磁存储介质，催化剂，气体传感器和铜线形成的前体。

5. 发明授权

US07906074B2 Microfluidic array system for biological, chemical, and biochemical assessments 有权
标题翻译：用于生物，化学和生物化学评估的微流体阵列系统
公开(公告)号：US07906074B2
公开(公告)日：2011-03-15
申请号：US12100209
申请日：2008-04-09
申请人： Jong Wook Hong , Jihyun F. Kim , Tae Kwang Oh , Sung Ho Yoon
发明人： Jong Wook Hong , Jihyun F. Kim , Tae Kwang Oh , Sung Ho Yoon
IPC分类号： B01L3/02 , B01L99/00 , G01N15/06
CPC分类号： F16K99/0026 , B01L3/502738 , B01L2300/0887 , B01L2400/0439 , B01L2400/0481 , B01L2400/0633 , B01L2400/0638 , B01L2400/0655 , F16K99/0001 , F16K99/0048 , F16K99/0057 , F16K2099/0078 , F16K2099/0084 , Y10T156/10 , Y10T436/11 , Y10T436/2575
摘要： The system and method of the present application is a microfluidic array system for biological, chemical and biochemical assessments including a microfluidic chip for reaction assays, wherein the microfluidic chip includes a control layer and a fluidic layer, wherein the control layer is pressurized through pneumatic or hydraulic means in order to control the flow of the reagents in the fluidic layer. The system and method of the present application further includes a method of fabricating such a microfluidic chip, and further a method for operating the same. Lastly, the system and method of the present application further includes a system for operating and analyzing the microfluidic array including a pressure source, a fluidic source, a biochip reader, and a processor configured to control the same.
摘要翻译：本申请的系统和方法是用于生物，化学和生物化学评估的微流体阵列系统，包括用于反应测定的微流体芯片，其中微流控芯片包括对照层和流体层，其中控制层通过气动或水力装置以控制流体层中的试剂的流动。本申请的系统和方法还包括制造这样的微流控芯片的方法，以及进一步的操作方法。最后，本申请的系统和方法还包括用于操作和分析包括压力源，流体源，生物芯片读取器和被配置为控制其的处理器的微流体阵列的系统。

6. 发明申请

US20100021704A1 Organic silver complex compound used in paste for conductive pattern forming 审中-公开
标题翻译：用于导电图案形成的糊料中的有机银络合物
公开(公告)号：US20100021704A1
公开(公告)日：2010-01-28
申请号：US12311345
申请日：2007-09-21
申请人： Sung-Ho Yoon , So-Won Kim , Sang-Ki Chun , Dong-Wook Lee , Seoung-Wook Kim , Won-Jong Kwon
发明人： Sung-Ho Yoon , So-Won Kim , Sang-Ki Chun , Dong-Wook Lee , Seoung-Wook Kim , Won-Jong Kwon
IPC分类号： C07F1/10 , H01B1/12 , B32B3/00
CPC分类号： H01B1/22 , H05K1/097 , H05K2203/121 , Y10T428/24802 , Y10T428/24917
摘要： Disclosed is an organic silver complex compound in which an organic ligand, containing an amine group (—NH2) and a hydroxyl group (—OH), is bonded with aliphatic silver (Ag) carboxylate at an equivalent ratio of 2:1 to form a complex. Also disclosed is a conductive paste comprising: a silver source selected from the group consisting of silver oxide powder, silver powder and silver flake; and organic silver complex compound in which an organic ligand, containing an amine group and a hydroxyl group, is bonded with an organic silver compound to form a complex. The organic silver complex compound has high solubility in a solvent and is present in the liquid state at room temperature. Thus, an extra solvent is not used in a conductive pattern-forming paste containing the complex compound or is used in a small amount, such that the content of silver in the conductive pattern-forming paste can be increased. Also, the conductive pattern-forming paste containing the complex compound has high viscosity, and thus shows excellent stability without adding a dispersant and, at the same time, is easily industrially applied.
摘要翻译：公开了一种有机银络合物，其中含有胺基（-NH 2）和羟基（-OH）的有机配体以2:1的当量比与脂肪族银（Ag）羧酸盐键合，形成复杂。还公开了一种导电膏，其包括：选自氧化银粉末，银粉和银片的银源; 和其中含有胺基和羟基的有机配体与有机银化合物键合以形成络合物的有机银络合物。有机银络合物在溶剂中的溶解性高，在室温下呈液态。因此，在含有配位化合物的导电图案形成糊剂中不使用额外的溶剂，或者少量使用，可以提高导电图案形成膏剂中的银含量。此外，含有配合化合物的导电图形形成糊具有高粘度，因此在不添加分散剂的情况下显示出优异的稳定性，同时容易在工业上使用。

7. 发明申请

US20060164431A1 Apparatus and method for displaying graphic objects concurrently 审中-公开
标题翻译：同时显示图形对象的装置和方法
公开(公告)号：US20060164431A1
公开(公告)日：2006-07-27
申请号：US11231898
申请日：2005-09-22
申请人： Sung-ho Yoon , Bom-jun Kwon , Jang-seok Seo
发明人： Sung-ho Yoon , Bom-jun Kwon , Jang-seok Seo
IPC分类号： G09G5/00
CPC分类号： G09G5/14
摘要： An apparatus is provided for displaying all graphic objects after having captured a point in time when an event is transmitted to the last graphic object, when a double buffering method is used, to prevent a transition of a windows system generated by visually observable intervals occurring between events where graphic objects are displayed on a screen by an event handler. Similarly, a method is provided for concurrently displaying graphic objects, the method including checking whether an event to display a graphic object has been generated, storing the graphic object processed according to the event, checking the number of times the event, whose generation has been checked, and the graphic object have been processed, and displaying the stored graphic object as a result of the check.
摘要翻译：提供了一种装置，用于在使用双重缓冲方法之后捕获事件被发送到最后一个图形对象的时间点之后显示所有图形对象，以防止通过视觉上可观察到的间隔产生的Windows系统的转变图形对象由事件处理程序在屏幕上显示的事件。类似地，提供了一种用于同时显示图形对象的方法，该方法包括检查是否已经生成了显示图形对象的事件，存储根据事件处理的图形对象，检查其生成的事件的次数检查，并且图形对象已被处理，并且作为检查的结果显示存储的图形对象。

8. 发明授权

US06881467B2 Vacuum insulator using glass white wool and its fabrication method 失效
标题翻译：玻璃白羊毛真空绝缘子及其制作方法
公开(公告)号：US06881467B2
公开(公告)日：2005-04-19
申请号：US10030528
申请日：2001-03-16
申请人： Hyung-Jin Jung , Goo-Dae Kim , No-Kyung Park , Yong-Gyu Shin , Sung-Ho Yoon , Sung-Kyu Lee
发明人： Hyung-Jin Jung , Goo-Dae Kim , No-Kyung Park , Yong-Gyu Shin , Sung-Ho Yoon , Sung-Kyu Lee
IPC分类号： F16L59/06 , B32B1/06 , B32B27/12 , C04B30/02 , D04H13/00 , E04B1/80 , F16L59/065 , B32B1/04 , B32B3/02
CPC分类号： C03C13/06 , B32B1/06 , B32B27/12 , C04B30/02 , C04B2111/00612 , D04H1/4218 , D04H1/559 , D04H13/00 , E04B1/803 , F16L59/065 , Y02A30/242 , Y02B80/12 , Y10T428/231 , Y10T428/239 , C04B14/42 , C04B40/0071 , C04B40/0082 , C04B40/0089
摘要： The vacuum insulator in accordance with the present invention comprises glass white wool body which density is 0.1˜0.5 g/cm3 in density and is below 0.0023 kcal/mh° C. in thermal conductivity, and a non permeable container surrounding the body in which the pressure is between 10−6 ˜10−1 torr. The vacuum insulator is fabricated by piling up glass white wool, thermal-pressutizing the piled glass white wool to form a body of 0.1˜0.5 g/cm3 in density wherein the pressurizing is done at 0.007˜1.5 kg/cm2 and under 20° C. for more than 10 minutes, putting the body in the non-permeable container, and producing a vacuum in the container.
摘要翻译：根据本发明的真空绝热体包括密度为0.1〜0.5g / cm 3，密度低于0.0023kcal / m·h的玻璃白色羊毛体，导热系数为围绕身体的可渗透容器，其中压力在10 -6 -6托之间。真空绝缘子通过堆积玻璃白色羊毛制成，对堆积的玻璃白色羊毛进行热压，形成密度为0.1〜0.5g / cm 3的体，其中加压在0.007〜1.5 kg / cm 2，20℃以下10分钟以上，将本体置于不可渗透容器中，并在容器内产生真空。

9. 发明授权

US06642123B2 Method of fabricating a silicon wafer including steps of different temperature ramp-up rates and cool-down rates 有权
标题翻译：制造硅晶片的方法包括不同温度升温速率和冷却速率的步骤
公开(公告)号：US06642123B2
公开(公告)日：2003-11-04
申请号：US10156180
申请日：2002-05-29
申请人： Young-Hee Mun , Gun Kim , Sung-Ho Yoon
发明人： Young-Hee Mun , Gun Kim , Sung-Ho Yoon
IPC分类号： H01L2176
CPC分类号： C30B33/00 , C30B29/06 , H01L21/3225
摘要： A method of fabricating a silicon wafer, which includes the steps of preparing a silicon wafer by slicing, grinding, and cleaning an ingot, inserting the silicon wafer in a diffusion furnace having an ambience of one of Ar, N2 and inert gas including Ar and N2, pre-heating and maintaining the diffusion furnace at about 500° C., changing the ambience into one of H2, Ar and inert gas including H2 and Ar successively, increasing a temperature of the diffusion furnace by a temperature-increasing speed of 50˜70° C./min between 500˜800° C., 10˜50° C./min between 800˜900° C., 0.5˜10° C./min between 900˜1000° C., and 0.1˜0.5° C./min between 1000˜1250° C., maintaining the diffusion furnace at 1200˜1250° C. for 1˜120 min, changing the ambience inside the diffusion furnace into one of Ar, N2 and inert gas ambience including Ar and N2 successively, and decreasing the temperature of the diffusion furnace down to 500 ° C. by a temperature-decreasing speed of 0.1˜0.5° C./min between 1000˜1250° C., 0.5˜10° C./min between 900˜1000° C., 10˜50° C./min between 800˜900° C., and 50˜70° C./min between 500˜800° C.
摘要翻译：一种制造硅晶片的方法，包括以下步骤：通过切片，研磨和清洁锭来制备硅晶片，将硅晶片插入具有Ar，N2和包括Ar的惰性气体之一的扩散炉中， N2，将扩散炉预热并维持在约500℃，连续地将气氛改变为包括H 2和Ar的H 2，Ar和惰性气体中的一种，将扩散炉的温度升高50℃ 在500〜800℃之间为〜70℃/分钟，800〜900℃之间为10〜50℃/分钟，900〜1000℃为0.5〜10℃/分钟，在1000〜1250℃之间为0.5℃/分钟，将扩散炉保持在1200〜1250℃1〜120分钟，将扩散炉内的氛围改变为Ar，N2和惰性气体环境中的一种，包括Ar N2连续下降，扩散炉温度降至500℃，降温速度为0.1〜0.5℃/ min，1000〜在900〜1000℃之间为0.5〜10℃/分钟，800〜900℃为10〜50℃/分钟，500〜800℃为50〜70℃/分钟 C。

10. 发明授权

US08962731B2 Preparation method of metal nanobelt 有权
标题翻译：金属纳米带的制备方法
公开(公告)号：US08962731B2
公开(公告)日：2015-02-24
申请号：US13578792
申请日：2011-03-10
申请人： Won-Jong Kwon , Sung-Ho Yoon , Kyung-Hoon Lee
发明人： Won-Jong Kwon , Sung-Ho Yoon , Kyung-Hoon Lee
IPC分类号： C08L79/02 , B22F1/00 , B22F7/04 , B22F9/20 , C09D11/52
CPC分类号： B22F1/0062 , B22F1/0025 , B22F7/04 , B22F9/20 , C09D11/52 , Y10S977/89
摘要： This disclosure relates to a method of preparing a metal nanobelt. According to the method, a metal nanobelt having various applicabilities, for example, capable of easily forming a conductive film or a conductive pattern with excellent conductivity, may be easily prepared by a simple process at room temperature and atmospheric pressure. The method comprises reacting a conductive polymer and a metal salt.
摘要翻译：本公开涉及一种制备金属纳米带的方法。根据该方法，可以通过在室温和大气压下的简单方法容易地制备具有各种适用性的金属纳米带，例如能够容易地形成具有优异导电性的导电膜或导电图案。该方法包括使导电聚合物与金属盐反应。

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