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    • 5. 发明申请
    • Organic silver complex compound used in paste for conductive pattern forming
    • 用于导电图案形成的糊料中的有机银络合物
    • US20100021704A1
    • 2010-01-28
    • US12311345
    • 2007-09-21
    • Sung-Ho YoonSo-Won KimSang-Ki ChunDong-Wook LeeSeoung-Wook KimWon-Jong Kwon
    • Sung-Ho YoonSo-Won KimSang-Ki ChunDong-Wook LeeSeoung-Wook KimWon-Jong Kwon
    • C07F1/10H01B1/12B32B3/00
    • H01B1/22H05K1/097H05K2203/121Y10T428/24802Y10T428/24917
    • Disclosed is an organic silver complex compound in which an organic ligand, containing an amine group (—NH2) and a hydroxyl group (—OH), is bonded with aliphatic silver (Ag) carboxylate at an equivalent ratio of 2:1 to form a complex. Also disclosed is a conductive paste comprising: a silver source selected from the group consisting of silver oxide powder, silver powder and silver flake; and organic silver complex compound in which an organic ligand, containing an amine group and a hydroxyl group, is bonded with an organic silver compound to form a complex. The organic silver complex compound has high solubility in a solvent and is present in the liquid state at room temperature. Thus, an extra solvent is not used in a conductive pattern-forming paste containing the complex compound or is used in a small amount, such that the content of silver in the conductive pattern-forming paste can be increased. Also, the conductive pattern-forming paste containing the complex compound has high viscosity, and thus shows excellent stability without adding a dispersant and, at the same time, is easily industrially applied.
    • 公开了一种有机银络合物,其中含有胺基(-NH 2)和羟基(-OH)的有机配体以2:1的当量比与脂肪族银(Ag)羧酸盐键合,形成 复杂。 还公开了一种导电膏,其包括:选自氧化银粉末,银粉和银片的银源; 和其中含有胺基和羟基的有机配体与有机银化合物键合以形成络合物的有机银络合物。 有机银络合物在溶剂中的溶解性高,在室温下呈液态。 因此,在含有配位化合物的导电图案形成糊剂中不使用额外的溶剂,或者少量使用,可以提高导电图案形成膏剂中的银含量。 此外,含有配合化合物的导电图形形成糊具有高粘度,因此在不添加分散剂的情况下显示出优异的稳定性,同时容易在工业上使用。
    • 7. 发明授权
    • Method of fabricating annealed wafer
    • 制造退火晶圆的方法
    • US06818569B2
    • 2004-11-16
    • US10323733
    • 2002-12-20
    • Young-Hee MunGun KimSung-Ho Yoon
    • Young-Hee MunGun KimSung-Ho Yoon
    • H01L2126
    • H01L21/324H01L21/3221
    • A method of fabricating an annealed wafer of high quality by forming a defect-free active region of a device and controlling an irregular resistivity characteristic. The method includes a first annealing step of pre-heating a silicon wafer at a temperature of about 500° C. in a furnace in an ambience of a gas selected from the group consisting of Ar, N2 and an inert gas including Ar and N2; a second annealing step of changing the ambience of the gas into a 100% H2 gas ambience, increasing the temperature to 850° C.-1,150° C., and carrying out annealing for about an hour by maintaining the increased temperature; a third annealing step of changing the ambience of the gas into a 100% Ar gas ambience, increasing the temperature to about 1,200° C., and carrying out annealing for about an hour while the temperature of about 1,200° C. is maintained; and a temperature dropping step of decreasing the temperature in the furnace below about 500° C.
    • 通过形成器件的无缺陷有源区域并控制不规则电阻率特性来制造高质量的退火晶片的方法。 该方法包括第一退火步骤,在选自Ar,N 2和包括Ar和N 2的惰性气体的气体的氛围下,在炉中在约500℃的温度下预热硅晶片; 将气体的气氛改变为100%H2气氛的第二退火步骤,将温度升高至850℃-1.150℃,并通过维持升高的温度进行约1小时的退火; 将气体的气氛改变为100%Ar气体环境的第三退火步骤,将温度升高至约1200℃,并且在保持约1200℃的温度下进行约1小时的退火; 以及降低炉内温度低于约500℃的降温步骤。
    • 9. 发明授权
    • Preparation method of copper particle composition
    • 铜粒子组成的制备方法
    • US08236089B2
    • 2012-08-07
    • US12452751
    • 2008-07-24
    • Woo-Ram LeeSang-Ho KimSung-Ho Yoon
    • Woo-Ram LeeSang-Ho KimSung-Ho Yoon
    • B22F9/24
    • C01G3/02B22F9/24B22F2998/00B82Y30/00C01P2002/72C01P2004/03C01P2004/04C01P2004/32C01P2004/51C01P2004/54C01P2004/61C01P2004/62C01P2004/64B22F1/0018
    • A preparation method of a copper particle composition includes dissolving a copper carboxyl compound, or a carboxyl group-containing compound and a copper salt, in a solvent to prepare a copper(II) precursor solution; putting a weak reducing agent with a standard reduction potential of −0.2 to −0.05V to the prepared copper(II) precursor solution to assemble a plurality of Cu2O fine particles having an average diameter of 1 to 100 nm with a standard deviation of 0 to 10%, thereby forming spherical Cu2O assembly particles having an average diameter of 0.1 to 10 μm with a standard deviation of 0 to 40%; reducing the spherical Cu2O assembly particles into copper particles by using a reducing agent; and separating the copper particles from the result product. Thus, copper particles can be produced fast, economically, and the obtained copper particles have good crystallinity and good resistance against oxidation.
    • 铜颗粒组合物的制备方法包括将铜羧基化合物或含羧基化合物和铜盐溶解在溶剂中以制备前体铜(II)溶液; 将具有-0.2〜-0.05V的标准还原电位的弱还原剂加入到所制备的铜(II)前体溶液中,以将标准偏差为0的平均直径为1〜100nm的多个Cu 2 O微粒组装成 10%,由此形成平均直径为0.1至10μm的球形Cu2O组装颗粒,标准偏差为0至40%; 通过使用还原剂将球形Cu2O组装颗粒还原成铜颗粒; 并从结果产物中分离出铜颗粒。 因此,可以快速,经济地制造铜粒子,所得到的铜粒子具有良好的结晶性和良好的抗氧化性。