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1. 发明授权

US07510979B2 Method for forming a pattern on a semiconductor device and semiconductor device resulting from the same 失效
标题翻译：在半导体器件上形成图案的方法和由其制成的半导体器件
公开(公告)号：US07510979B2
公开(公告)日：2009-03-31
申请号：US11770503
申请日：2007-06-28
申请人： Jae-chang Jung , Keun Kyu Kong , Jin-soo Kim
发明人： Jae-chang Jung , Keun Kyu Kong , Jin-soo Kim
IPC分类号： H01L21/302 , C08F234/02 , G03F7/00
CPC分类号： G02B1/111 , C09D135/00 , G03F7/091 , Y10T428/12528
摘要： Disclosed are a light absorbent agent polymer for organic anti-reflective coating which can prevent diffused light reflection of bottom film layer or substrate and reduce standing waves caused by a variation of thickness of the photoresist itself, thereby, increasing uniformity of the photoresist pattern, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF among processes for manufacturing semiconductor devices, and its preparation method. Also, the present invention discloses an organic anti-reflective coating composition comprising a light absorbent agent polymer for the organic anti-reflective coating and a pattern formation process using the coating composition.
摘要翻译：公开了一种用于有机抗反射涂层的光吸收剂聚合物，其可以防止底部薄膜层或基底的扩散光反射，并减少由光致抗蚀剂本身的厚度变化引起的驻波，从而提高光致抗蚀剂图案的均匀性，其制造半导体装置的制造方法中使用193nm的ArF，形成用于光刻的光刻胶的超微细图案的方法及其制备方法。此外，本发明公开了一种有机抗反射涂层组合物，其包含用于有机抗反射涂层的光吸收剂聚合物和使用该涂料组合物的图案形成方法。

2. 发明申请

US20080200024A1 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20080200024A1
公开(公告)日：2008-08-21
申请号：US11819856
申请日：2007-06-29
申请人： Keun Kyu Kong
发明人： Keun Kyu Kong
IPC分类号： H01L21/4763 , H01L29/76
CPC分类号： H01L28/91 , H01L27/10852
摘要： A method for fabricating a semiconductor device includes forming an interlayer insulating film over a semiconductor substrate. The interlayer insulating film is selectively etched to form a hole defining a storage node region. A lower electrode is formed in the hole. A support layer is formed over the lower electrode. The support layer fills an upper part of the hole and exposes the interlayer insulating film. A dip-out process is performed to remove the interlayer insulating film. The supporting layer is removed to expose the lower electrode. A dielectric film is formed over the semiconductor substrate including the lower electrode. A plate electrode is formed over the semiconductor substrate to fill the dielectric film and the lower electrode.
摘要翻译：一种制造半导体器件的方法包括在半导体衬底上形成层间绝缘膜。选择性地蚀刻层间绝缘膜以形成限定存储节点区域的孔。在孔中形成下电极。在下电极上形成支撑层。支撑层填充孔的上部并暴露层间绝缘膜。进行浸出处理以去除层间绝缘膜。去除支撑层以暴露下电极。在包括下电极的半导体衬底之上形成电介质膜。在半导体衬底之上形成平板电极以填充电介质膜和下电极。

3. 发明授权

US07329477B2 Process for forming a fine pattern using a top-coating composition for a photoresist and product formed by same 失效
标题翻译：使用用于光刻胶的顶涂组合物和由其形成的产品形成精细图案的方法
公开(公告)号：US07329477B2
公开(公告)日：2008-02-12
申请号：US10993869
申请日：2004-11-19
申请人： Jae Chang Jung , Keun Kyu Kong , Hyeong Soo Kim , Jin Soo Kim , Cha Won Koh , Sung Eun Hong , Geun Su Lee , Min Ho Jung , Ki Ho Baik
发明人： Jae Chang Jung , Keun Kyu Kong , Hyeong Soo Kim , Jin Soo Kim , Cha Won Koh , Sung Eun Hong , Geun Su Lee , Min Ho Jung , Ki Ho Baik
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/11 , G03F7/0045
摘要： The present invention provides a process for using an amine contamination-protecting top-coating composition. Preferably, the amine contamination-protecting top-coating composition of the present invention comprises an amine contamination-protecting compound. Useful amine contamination-protecting compounds include amine derivatives; amino acid derivatives; amide derivatives; urethane derivatives; urea derivatives; salts thereof; and mixtures thereof. The amine contamination-protecting top-coating composition of the present invention reduces or eliminates problems such as T-topping due to a post exposure delay effect and/or difficulties in forming a fine pattern below 100 nm due to acid diffusion associated with conventional lithography processes involving a photoresist polymer containing an alicyclic main chain using a light source, such as KrF (248 nm), ArF (193 nm), F2 (157 nm), E-beam, ion beam and extremely ultraviolet (EUV).
摘要翻译：本发明提供了使用胺类污染物保护性顶涂层组合物的方法。优选地，本发明的胺污染保护性顶涂剂组合物包含胺污染保护化合物。有用的胺污染保护化合物包括胺衍生物; 氨基酸衍生物; 酰胺衍生物; 氨基甲酸酯衍生物; 尿素衍生物; 的盐; 及其混合物。本发明的胺污染保护性顶涂剂组合物由于后曝光延迟效应而降低或消除诸如T形顶部的问题和/或由于与常规光刻工艺相关的酸扩散而难以形成低于100nm的精细图案涉及使用诸如KrF（248nm），ArF（193nm），F 2 N（157nm），电子束，离子束等的光源的含有脂环族主链的光致抗蚀剂聚合物紫外线（EUV）。

4. 发明授权

US07285370B2 Light absorbent agent polymer useful for organic anti-reflective coating, its preparation method and organic anti-reflective coating composition comprising the same 失效
标题翻译：用于有机抗反射涂层的光吸收剂聚合物，其制备方法和包含其的有机抗反射涂料组合物
公开(公告)号：US07285370B2
公开(公告)日：2007-10-23
申请号：US10963129
申请日：2004-10-12
申请人： Jae Chang Jung , Keun Kyu Kong , Jin-soo Kim
发明人： Jae Chang Jung , Keun Kyu Kong , Jin-soo Kim
IPC分类号： C03C1/825 , C08F122/04
CPC分类号： G02B1/111 , C09D135/00 , G03F7/091 , Y10T428/12528
摘要： Disclosed are a light absorbent agent polymer for organic anti-reflective coating which can prevent diffused light reflection of bottom film layer or substrate and reduce standing waves caused by a variation of thickness of the photoresist itself, thereby, increasing uniformity of the photoresist pattern, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF among processes for manufacturing semiconductor devices, and its preparation method. Also, the present invention discloses an organic anti-reflective coating composition comprising a light absorbent agent polymer for the organic anti-reflective coating and a pattern formation process using the coating composition.
摘要翻译：公开了一种用于有机抗反射涂层的光吸收剂聚合物，其可以防止底部薄膜层或基底的扩散光反射，并减少由光致抗蚀剂本身的厚度变化引起的驻波，从而提高光致抗蚀剂图案的均匀性，其制造半导体装置的制造方法中使用193nm的ArF，形成用于光刻的光刻胶的超微细图案的方法及其制备方法。此外，本发明公开了一种有机抗反射涂层组合物，其包含用于有机抗反射涂层的光吸收剂聚合物和使用该涂料组合物的图案形成方法。

5. 发明授权

US07186496B2 Light absorbent agent polymer useful for organic anti-reflective coating, its preparation method and organic anti-reflective coating composition comprising the same 失效
标题翻译：用于有机抗反射涂层的光吸收剂聚合物，其制备方法和包含其的有机抗反射涂料组合物
公开(公告)号：US07186496B2
公开(公告)日：2007-03-06
申请号：US10963316
申请日：2004-10-12
申请人： Jae Chang Jung , Keun Kyu Kong , Young-Sik Kim
发明人： Jae Chang Jung , Keun Kyu Kong , Young-Sik Kim
IPC分类号： G03C1/825 , G03C1/835 , G03F7/09 , G03F7/36 , C08F22/06 , C08F22/40
CPC分类号： H01L21/0276 , C09D179/08 , G03F7/091
摘要： Disclosed are a light absorbent agent polymer for organic anti-reflective coating which can prevent diffused light reflection of the bottom film layer or substrate and reduce standing waves caused by variation of thickness of the photoresist itself, thereby, increasing uniformity of the photoresist pattern, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF among processes for manufacturing semiconductor device, and its preparation method. Also, the present invention discloses an organic anti-reflective coating composition comprising the light absorbent agent polymer for the organic anti-reflective coating and a pattern formation process using the coating composition.
摘要翻译：公开了一种用于有机抗反射涂层的光吸收剂聚合物，其可以防止底部薄膜层或基底的扩散光反射，并减少由光致抗蚀剂本身的厚度变化引起的驻波，从而增加光致抗蚀剂图案的均匀性通过在制造半导体器件的工艺中使用193nm的ArF，形成用于光刻的超精细图案的光刻胶的方法及其制备方法。此外，本发明公开了一种有机抗反射涂层组合物，其包含用于有机抗反射涂层的光吸收剂聚合物和使用该涂料组合物的图案形成方法。

6. 发明授权

US06593446B1 Organic polymer for organic anti-reflective coating layer and preparation thereof 失效
标题翻译：有机抗反射涂层用有机聚合物及其制备方法
公开(公告)号：US06593446B1
公开(公告)日：2003-07-15
申请号：US09657069
申请日：2000-09-07
申请人： Jae-Chang Jung , Keun-Kyu Kong , Min-Ho Jung , Sung-Eun Hong , Geun-Su Lee , Ki-Ho Baik
发明人： Jae-Chang Jung , Keun-Kyu Kong , Min-Ho Jung , Sung-Eun Hong , Geun-Su Lee , Ki-Ho Baik
IPC分类号： C08G600
CPC分类号： G03F7/091 , C08F212/08 , C08F216/38 , C08K5/42 , C08L25/08 , C08L29/14 , C08L33/066 , C09D125/08 , C09D129/14 , G03F7/0045 , G03F7/038 , C08L2666/04 , C08F2220/1808 , C08F212/14
摘要： The present invention provides an organic anti-reflective film composition suitable for use in submicrolithography. The composition comprises a compound of chemical formula 11 and a compound of chemical formula 12. The organic anti-reflective film effectively absorbs the light penetrating through the photoresist film coated on top of the anti-reflective film, thereby greatly reducing the standing wave effect. Use of organic anti-reflective films of the present invention allows patterns to be formed in a well-defined, ultrafine configuration, providing a great contribution to the high integration of semiconductor devices. wherein a, b, c, R′, R″, R1, R2, R3, and R4 are those defined herein.
摘要翻译：本发明提供适用于亚微光刻的有机抗反射膜组合物。该组合物包含化学式11的化合物和化学式12的化合物。有机抗反射膜有效地吸收穿过抗反射膜顶部的光致抗蚀剂膜的光，从而大大降低了驻波效应。使用本发明的有机抗反射膜允许以明确限定的超细结构形成图案，为半导体器件的高集成度提供了巨大的贡献。其中a，b，c，R'，R“ ，R1，R2，R3和R4是本文定义的那些。

7. 发明授权

US06322948B1 Photoresist cross-linker and photoresist composition comprising the same 失效
标题翻译：光阻抗交联剂和包含其的光致抗蚀剂组合物
公开(公告)号：US06322948B1
公开(公告)日：2001-11-27
申请号：US09499231
申请日：2000-02-07
申请人： Jae Chang Jung , Keun Kyu Kong , Jin Soo Kim , Ki Ho Baik
发明人： Jae Chang Jung , Keun Kyu Kong , Jin Soo Kim , Ki Ho Baik
IPC分类号： G03F7004
CPC分类号： G03F7/0382 , Y10S430/128
摘要： The present invention is directed to photoresist cross-linkers selected from the group consisting of a cross-linker monomer represented by following Chemical Formula 1, and homopolymers and copolymers thereof. Such cross-linkers are suitable for use in photolithography processes employing KrF (248 nm), ArF (193 nm), E-beam, ion-beam or EUV light sources.
摘要翻译：本发明涉及选自由以下化学式1表示的交联剂单体和其均聚物和共聚物的光致抗蚀剂交联剂。这种交联剂适用于采用KrF（248nm），ArF（193nm），电子束，离子束或EUV光源的光刻工艺。<化学式1>

8. 发明授权

US06312868B1 Photoresist cross-linker and photoresist composition comprising the same 失效
标题翻译：光阻抗交联剂和包含其的光致抗蚀剂组合物
公开(公告)号：US06312868B1
公开(公告)日：2001-11-06
申请号：US09501096
申请日：2000-02-09
申请人： Keun Kyu Kong , Jae Chang Jung , Myoung Soo Kim , Hyoung Gi Kim , Hyeong Soo Kim , Ki Ho Baik
发明人： Keun Kyu Kong , Jae Chang Jung , Myoung Soo Kim , Hyoung Gi Kim , Hyeong Soo Kim , Ki Ho Baik
IPC分类号： G03F7004
CPC分类号： G03F7/0045 , G03F7/038
摘要： The present invention is directed to photoresist cross-linkers selected from the group consisting of a cross-linker monomer represented by following Chemical Formula 1, and homopolymers and copolymers thereof. Such cross-linkers are suitable for use in photolithography processes employing KrF(248nm), ArF(193nm), E-beam, ion-beam or EUV light sources. wherein X1 and X2 individually represent CH2, CH2CH2, O or S; p and s individually represent an integer from 0 to 5; q is 0 or 1; R′ and R″ independently represent hydrogen or methyl; R represents straight or branched C1-10 alkyl, straight or branched C1-10 ether, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ether including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group; R1 and R2 independently represent hydrogen, straight or branched C1-10 alkyl, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group.
摘要翻译：本发明涉及选自由以下化学式1表示的交联剂单体和其均聚物和共聚物的光致抗蚀剂交联剂。这种交联剂适用于采用KrF（248nm），ArF（193nm），电子束，离子束或EUV光源的光刻工艺.X1和X2分别表示CH2，CH2CH2，O或S; p和s各自表示0至5的整数; q为0或1; R'和R“独立地表示氢或甲基; R代表直链或支链C 1-10烷基，直链或支链C1-10醚，直链或支链C1-10酯，直链或支链C 1-10酮，直链或支链C 1-10羧酸，直链或支链C 1-10缩醛包括至少一个羟基的直链或支链C 1-10烷基，包括至少一个羟基的直链或支链C 1-10醚，包括至少一个羟基的直链或支链C 1-10酯，直链或支链C 1-10酮包括至少一个羟基，包括至少一个羟基的直链或支链C 1-10羧酸，和包含至少一个羟基的直链或支链C 1-10缩醛; R 1和R 2独立地表示氢，直链或支链C 1-10烷基，直链或支链C 1-10酯，直链或支链C 1-10酮，直链或支链C 1-10羧酸，直链或支链C 1-10缩醛，直链或包括至少一个羟基的支链C 1-10烷基，包括至少一个羟基的直链或支链C 1-10酯，包括至少一个羟基，直链或支链C 1-10羧酸的直链或支链C 1-10酮包括至少一个羟基，以及包含至少一个羟基的直链或支链C 1-10缩醛。

9. 发明授权

US07674708B2 Method for forming fine patterns of a semiconductor device 失效
标题翻译：用于形成半导体器件的精细图案的方法
公开(公告)号：US07674708B2
公开(公告)日：2010-03-09
申请号：US11733937
申请日：2007-04-11
申请人： Keun Kyu Kong
发明人： Keun Kyu Kong
IPC分类号： H01L21/31 , H01L21/00
CPC分类号： H01L21/0337 , H01L21/0338
摘要： A method for forming a fine pattern of a semiconductor device overcomes resolution limits of exposure equipment. The method includes forming a first photoresist pattern over an underlying layer formed over a semiconductor substrate. An amorphous carbon film and a second photoresist film are sequentially deposited over the first photoresist pattern. The second photoresist film and the amorphous carbon film are planarized to expose the first photoresist pattern. A thick portion and a thin portion of the amorphous carbon film is formed. The first photoresist pattern and the second photoresist film are removed. Etching is performed on the thin portion of the amorphous carbon film and the underlying layer using the thick portion of the amorphous carbon film as an etch mask. The thick portion of the amorphous carbon film is removed to expose a fine pattern of the underlying layer.
摘要翻译：用于形成半导体器件的精细图案的方法克服了曝光设备的分辨率限制。该方法包括在半导体衬底上形成的下层上形成第一光致抗蚀剂图案。在第一光致抗蚀剂图案上顺序地沉积无定形碳膜和第二光致抗蚀剂膜。将第二光致抗蚀剂膜和非晶碳膜平坦化以暴露第一光致抗蚀剂图案。形成无定形碳膜的厚部分和薄部分。去除第一光致抗蚀剂图案和第二光致抗蚀剂膜。使用非晶碳膜的厚部作为蚀刻掩模，在非晶碳膜和下层的薄壁部分上进行蚀刻。去除非晶碳膜的厚部分以暴露下层的精细图案。

10. 发明授权

US07510973B2 Method for forming fine pattern in semiconductor device 失效
标题翻译：在半导体器件中形成精细图案的方法
公开(公告)号：US07510973B2
公开(公告)日：2009-03-31
申请号：US11819854
申请日：2007-06-29
申请人： Keun Kyu Kong
发明人： Keun Kyu Kong
IPC分类号： H01L21/311
CPC分类号： H01L21/0332 , H01L21/0337 , H01L21/0338 , H01L21/31144 , Y10S438/95
摘要： A method for forming a fine pattern in a semiconductor device is provided. In one aspect, the method can construct a fine pattern in semiconductor devices. The fine pattern has a critical dimension that overcomes the resolution limit of an exposure equipment.
摘要翻译：提供了一种在半导体器件中形成精细图案的方法。在一个方面，该方法可以在半导体器件中构造精细图案。精细图案具有克服曝光设备分辨率极限的关键尺寸。

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