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1. 发明申请

US20150225874A1 METHOD FOR GROWING ZIRCONIUM NITRIDE CRYSTAL 审中-公开
标题翻译：生长氮化锆晶体的方法
公开(公告)号：US20150225874A1
公开(公告)日：2015-08-13
申请号：US14422562
申请日：2012-08-21
申请人： Sung Moo Kim
发明人： Sung Moo Kim
IPC分类号： C30B25/02 , C30B29/38
CPC分类号： C30B25/02 , C23C16/34 , C30B25/183 , C30B29/38 , C30B29/403 , H01L21/02439 , H01L21/0254 , H01L21/0262 , H01L33/005 , H01L33/26
摘要： According to the present invention, if a zirconium nitride lattice is grown by a method for growing zirconium nitride using a metal-organic vapor phase epitaxy method, the lattice binding efficiency of ZrN and GaN can enable a low cost preparation of an LED having high performance and it is very advantageous to grow a green LED by a direct band gap in the presence of Zr3N4. In addition, InZr3N4 can be substituted for In when growing a MQW in an LED, and thus it is very advantageous to prepare green and red LEDs. Further, a more satisfactory diffusion current can be obtained using ZrN or Zr3N4 as an epitaxial interlayer, and thus it is very advantageous in the application of a large LED chip and it is possible to prevent thermal expansion or cracks with respect to a silicon substrate.
摘要翻译：根据本发明，如果通过使用金属 - 有机气相外延法的生长氮化锆的方法生长氮化锆晶格，则ZrN和GaN的晶格结合效率可以使得具有高性能的LED的低成本准备并且在Zr 3 N 4存在下通过直接带隙生长绿色LED是非常有利的。另外，当在LED中生长MQW时，InZr3N4可以代替In，因此制备绿色和红色LED是非常有利的。此外，可以使用ZrN或Zr3N4作为外延中间层获得更令人满意的扩散电流，因此在应用大的LED芯片方面是非常有利的，并且可以防止相对于硅衬底的热膨胀或裂纹。

2. 发明授权

US07772626B2 Image sensor and fabricating method thereof 失效
标题翻译：图像传感器及其制造方法
公开(公告)号：US07772626B2
公开(公告)日：2010-08-10
申请号：US12271887
申请日：2008-11-15
申请人： Sung-Moo Kim
发明人： Sung-Moo Kim
IPC分类号： H01L31/112
CPC分类号： H01L27/14636 , H01L27/14625 , H01L27/14627 , H01L27/14685
摘要： An image sensor and fabricating method thereof are disclosed by which damage to a protective layer can be prevented in a manner of reducing thermal stress of an uppermost metal line in performing thermal treatment for enhancing the dark characteristic. Such damage can be prevented by forming a poly layer pattern in an insulating interlayer on at least one side of the uppermost layer metal line.
摘要翻译：公开了一种图像传感器及其制造方法，通过以下方式可以防止对保护层的损伤：在进行用于增强黑暗特性的热处理中最上层金属线的热应力减小的方式。可以通过在最上层金属线的至少一侧的绝缘中间层中形成多层图案来防止这种损伤。

3. 发明授权

US09132126B2 Phenyl-isoxazole derivatives and preparation process thereof 有权
标题翻译：苯基异恶唑衍生物及其制备方法
公开(公告)号：US09132126B2
公开(公告)日：2015-09-15
申请号：US13979743
申请日：2012-03-30
申请人： Dong Yeon Kim , Dae Jin Cho , Gong Yeal Lee , Hong Youb Kim , Seok Hun Woo , Hae Un Lee , Sung Moo Kim , Choong Am Ahn , Seung Bin Yoon
发明人： Dong Yeon Kim , Dae Jin Cho , Gong Yeal Lee , Hong Youb Kim , Seok Hun Woo , Hae Un Lee , Sung Moo Kim , Choong Am Ahn , Seung Bin Yoon
IPC分类号： C07D261/14 , C07D261/18 , C07D413/06 , A61K31/496 , C07D261/08 , A61K31/42 , A61K31/454 , A61K45/06
CPC分类号： A61K31/496 , A61K31/42 , A61K31/454 , A61K45/06 , C07D261/08 , C07D261/18 , C07D413/06
摘要： Disclosed are a phenyl-isoxazol derivative compound, which is useful as a treatment material for virus infection, especially, infection of an influenza virus, or its pharmaceutically acceptable derivative, a preparation method thereof, and an illness treatment pharmaceutical composition including the compound as an active ingredient.
摘要翻译：公开了苯并异恶唑衍生物化合物，其可用作病毒感染的治疗材料，特别是感染流感病毒或其药学上可接受的衍生物，其制备方法和疾病治疗药物组合物，其包含该化合物作为有效成分。

4. 发明申请

US20060148245A1 Semiconductor devices and methods of manufacturing the same 失效
公开(公告)号：US20060148245A1
公开(公告)日：2006-07-06
申请号：US11318917
申请日：2005-12-27
申请人： Sung-Moo Kim
发明人： Sung-Moo Kim
IPC分类号： H01L21/4763
CPC分类号： H01L21/76804 , H01L21/7684
摘要： Shorting of a copper line with an adjacent line in a semiconductor device during chemical mechanical polishing may be prevented and thus reliability of the semiconductor device may be improved, when the semiconductor device includes a substrate, an interlayer insulating layer formed on the substrate and having a dual trench, and a copper line formed to fill the dual trench, wherein the dual trench includes a first trench inclined at a first angle with respect to the substrate, and a second trench connected to the first trench and inclined at a second angle that is smaller than the first angle with respect to the substrate.

5. 发明申请

US20140031364A1 PHENYL-ISOXAZOL DERIVATIVES AND PREPARATION PROCESS THEREOF 有权
标题翻译：苯丙酸衍生物及其制备方法
公开(公告)号：US20140031364A1
公开(公告)日：2014-01-30
申请号：US13979743
申请日：2012-03-30
申请人： Dong Yeon Kim , Dae Jin Cho , Gong Yeal Lee , Hong Youb Kim , Seok Hun Woo , Hae Un Lee , Sung Moo Kim , Choong Am Ahn , Seung Bin Yoon
发明人： Dong Yeon Kim , Dae Jin Cho , Gong Yeal Lee , Hong Youb Kim , Seok Hun Woo , Hae Un Lee , Sung Moo Kim , Choong Am Ahn , Seung Bin Yoon
IPC分类号： A61K31/496 , A61K31/454 , A61K45/06 , C07D413/06 , C07D261/18 , A61K31/42
CPC分类号： A61K31/496 , A61K31/42 , A61K31/454 , A61K45/06 , C07D261/08 , C07D261/18 , C07D413/06
摘要： Disclosed are a phenyl-isoxazol derivative compound, which is useful as a treatment material for virus infection, especially, infection of an influenza virus, or its pharmaceutically acceptable derivative, a preparation method thereof, and an illness treatment pharmaceutical composition including the compound as an active ingredient.
摘要翻译：公开了苯并异恶唑衍生物化合物，其可用作病毒感染的治疗材料，特别是感染流感病毒或其药学上可接受的衍生物，其制备方法和疾病治疗药物组合物，其包含该化合物作为有效成分。

6. 发明授权

US07659133B2 Method for manufacturing CMOS image sensor 失效
标题翻译： CMOS图像传感器的制造方法
公开(公告)号：US07659133B2
公开(公告)日：2010-02-09
申请号：US11646096
申请日：2006-12-26
申请人： Sung Moo Kim
发明人： Sung Moo Kim
IPC分类号： H01L21/00 , H01L21/8238
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/14689
摘要： Disclosed is a method for manufacturing a CMOS image sensor, capable of preventing dopants implanted with high energy from penetrating into a lower part of a gate electrode when a photodiode is formed, thereby preventing current leakage of a transistor and variation of a threshold voltage. The method includes the steps of forming a gate electrode on a transistor area of a first conductive type semiconductor substrate including a photodiode area and the transistor area, forming a salicide layer on the gate electrode, and implanting second conductive type dopants for forming a photodiode in a photodiode area of the semiconductor substrate.
摘要翻译：公开了一种制造CMOS图像传感器的方法，当形成光电二极管时，能够防止注入高能量的掺杂剂渗透到栅电极的下部，从而防止晶体管的电流泄漏和阈值电压的变化。该方法包括以下步骤：在包括光电二极管区域和晶体管区域的第一导电类型半导体衬底的晶体管区域上形成栅电极，在栅电极上形成自对准硅化物层，以及将用于形成光电二极管的第二导电型掺杂剂注入半导体衬底的光电二极管区域。

7. 发明授权

US07638426B2 Semiconductor devices and methods of manufacturing the same 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US07638426B2
公开(公告)日：2009-12-29
申请号：US11318917
申请日：2005-12-27
申请人： Sung-Moo Kim
发明人： Sung-Moo Kim
IPC分类号： H01L21/312 , H01L21/469
CPC分类号： H01L21/76804 , H01L21/7684
摘要： Shorting of a copper line with an adjacent line in a semiconductor device during chemical mechanical polishing may be prevented and thus reliability of the semiconductor device may be improved, when the semiconductor device includes a substrate, an interlayer insulating layer formed on the substrate and having a dual trench, and a copper line formed to fill the dual trench, wherein the dual trench includes a first trench inclined at a first angle with respect to the substrate, and a second trench connected to the first trench and inclined at a second angle that is smaller than the first angle with respect to the substrate.
摘要翻译：可以防止在化学机械抛光期间在半导体器件中使用相邻线的铜线短路，并且因此当半导体器件包括衬底，形成在衬底上的层间绝缘层并且具有双沟槽和形成为填充双沟槽的铜线，其中双沟槽包括相对于衬底倾斜第一角度的第一沟槽和连接到第一沟槽并以第二角度倾斜的第二沟槽，小于相对于基底的第一角度。

8. 发明申请

US20070155078A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20070155078A1
公开(公告)日：2007-07-05
申请号：US11614697
申请日：2006-12-21
申请人： Sung Ho Kwak , Sung Moo Kim
发明人： Sung Ho Kwak , Sung Moo Kim
IPC分类号： H01L21/8234 , H01L21/336 , H01L21/425
CPC分类号： H01L29/42376 , H01L21/28114 , H01L21/28123 , H01L21/28194 , H01L29/66537 , H01L29/66553 , H01L29/7833
摘要： A semiconductor device including at least one of: lightly doped drain regions over a semiconductor substrate; a gate insulating layer over a semiconductor substrate between lightly doped drain regions; and/or a gate formed at an upper side of a gate insulating layer. A lower width of a gate may be less than an interval between lightly doped drain regions. An upper width of a gate may be greater than an interval between lightly doped drain regions.
摘要翻译：一种半导体器件，包括半导体衬底上的轻掺杂漏极区中的至少一个; 在轻掺杂漏区之间的半导体衬底上的栅极绝缘层; 和/或形成在栅极绝缘层的上侧的栅极。栅极的较低宽度可以小于轻掺杂漏极区之间的间隔。栅极的上部宽度可以大于轻掺杂漏极区域之间的间隔。

9. 发明授权

US07631281B2 Method for modeling varactor by direct extraction of parameters 失效
标题翻译：通过直接提取参数建模变容二极管的方法
公开(公告)号：US07631281B2
公开(公告)日：2009-12-08
申请号：US11964484
申请日：2007-12-26
申请人： Sung-Moo Kim
发明人： Sung-Moo Kim
IPC分类号： G06F17/50
CPC分类号： G06F17/5009
摘要： A method for modeling a varactor with a MOS structure, and transforms an s-parameter obtained by the measurement using measurement equipment into a y-parameter and a z-parameter and then directly extracts parameters required for the modeling by means of equations in accordance with embodiments. The modeling can be made reflecting the parameters of the varactor varied according to frequency so that the more accurate RF modeling of a passive device can be made and the accurate modeling of the varactor can be made through the direct extraction method of the parameters so that the parameters of the varactor having a physical meaning can be extracted without using an expensive CAD tool, the time required for optimizing the parameters can be reduced, a computing time can be shorten, an initial condition dependence generated in performing the optimization is not required, and a pattern for a test is not required.
摘要翻译：一种用于对具有MOS结构的变容二极管建模的方法，并且将通过使用测量设备的测量获得的s参数变换为y参数和z参数，然后通过等式直接提取建模所需的参数实施例。可以根据频率对变容二极管的参数进行建模，从而可以对无源器件进行更准确的射频建模，并通过参数的直接提取方法对变容二极管进行精确建模，可以在不使用昂贵的CAD工具的情况下提取具有物理含义的变容二极管的参数，可以减少优化参数所需的时间，可以缩短计算时间，不需要在执行优化时产生的初始条件相关性，不需要测试模式。

10. 发明申请

US20090127600A1 IMAGE SENSOR AND FABRICATING METHOD THEREOF 失效
标题翻译：图像传感器及其制作方法
公开(公告)号：US20090127600A1
公开(公告)日：2009-05-21
申请号：US12271887
申请日：2008-11-15
申请人： Sung-Moo Kim
发明人： Sung-Moo Kim
IPC分类号： H01L31/112 , H01L21/28
CPC分类号： H01L27/14636 , H01L27/14625 , H01L27/14627 , H01L27/14685
摘要： An image sensor and fabricating method thereof are disclosed by which damage to a protective layer can be prevented in a manner of reducing thermal stress of an uppermost metal line in performing thermal treatment for enhancing the dark characteristic. Such damage can be prevented by forming a poly layer pattern in an insulating interlayer on at least one side of the uppermost layer metal line.
摘要翻译：公开了一种图像传感器及其制造方法，通过以下方式可以防止对保护层的损伤：在进行用于增强黑暗特性的热处理中最上层金属线的热应力减小的方式。可以通过在最上层金属线的至少一侧的绝缘中间层中形成多层图案来防止这种损伤。

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