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    • 1. 发明申请
    • ARRRAY SUBSTRATE FOR LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME
    • 用于液晶显示装置的阵列基板及其制造方法
    • US20110133199A1
    • 2011-06-09
    • US12985144
    • 2011-01-05
    • Su-Hyuk KANGDai Yun LEEYong In PARKYoung Joo KIM
    • Su-Hyuk KANGDai Yun LEEYong In PARKYoung Joo KIM
    • H01L29/786
    • H01L29/42384G02F1/13454H01L27/124H01L27/14621H01L29/78621
    • An array substrate for an LCD device includes a first TFT including a first semiconductor layer, a first gate electrode, wherein the first gate electrode is directly over the first semiconductor layer; a first protrusion extending from the first gate electrode along an edge of the first semiconductor layer; a second TFT including a second semiconductor layer, a second gate electrode, wherein the second gate electrode is directly over the second semiconductor layer; a second protrusion extending from the second gate electrode along an edge of the second semiconductor layer; a third TFT connected to crossed data and gate lines including a third semiconductor layer, a third gate electrode, wherein the third gate electrode is directly over the third semiconductor layer; a third protrusion extending from the third gate electrode along an edge of the third semiconductor layer; and a pixel electrode.
    • 用于LCD器件的阵列衬底包括:第一TFT,包括第一半导体层,第一栅电极,其中第一栅电极直接位于第一半导体层上; 从所述第一栅电极沿着所述第一半导体层的边缘延伸的第一突起; 包括第二半导体层的第二TFT,第二栅电极,其中所述第二栅电极直接在所述第二半导体层上; 从所述第二栅电极沿着所述第二半导体层的边缘延伸的第二突起; 连接到交叉数据的第三TFT和包括第三半导体层,第三栅电极的栅极线,其中第三栅极直接在第三半导体层上方; 从所述第三栅电极沿着所述第三半导体层的边缘延伸的第三突起; 和像素电极。
    • 4. 发明授权
    • Array substrate for liquid crystal display device and method of fabricating the same
    • 液晶显示装置用阵列基板及其制造方法
    • US07888151B2
    • 2011-02-15
    • US12318284
    • 2008-12-23
    • Su Hyuk KangDai Yun LeeYong In ParkYoung Joo Kim
    • Su Hyuk KangDai Yun LeeYong In ParkYoung Joo Kim
    • H01L21/00
    • H01L29/42384G02F1/13454H01L27/124H01L27/14621H01L29/78621
    • An array substrate for an LCD device includes a first TFT including a first semiconductor layer, a first gate electrode, wherein the first gate electrode is directly over the first semiconductor layer; a first protrusion extending from the first gate electrode along an edge of the first semiconductor layer; a second TFT including a second semiconductor layer, a second gate electrode, wherein the second gate electrode is directly over the second semiconductor layer; a second protrusion extending from the second gate electrode along an edge of the second semiconductor layer; a third TFT connected to crossed data and gate lines including a third semiconductor layer, a third gate electrode, wherein the third gate electrode is directly over the third semiconductor layer; a third protrusion extending from the third gate electrode along an edge of the third semiconductor layer; and a pixel electrode.
    • 用于LCD器件的阵列衬底包括:第一TFT,包括第一半导体层,第一栅电极,其中第一栅电极直接位于第一半导体层上; 从所述第一栅电极沿着所述第一半导体层的边缘延伸的第一突起; 包括第二半导体层的第二TFT,第二栅电极,其中所述第二栅电极直接在所述第二半导体层上; 从所述第二栅电极沿着所述第二半导体层的边缘延伸的第二突起; 连接到交叉数据的第三TFT和包括第三半导体层,第三栅电极的栅极线,其中第三栅极直接在第三半导体层上方; 从所述第三栅电极沿着所述第三半导体层的边缘延伸的第三突起; 和像素电极。
    • 6. 发明授权
    • Array substrate for liquid crystal display device and method of fabricating the same
    • 液晶显示装置用阵列基板及其制造方法
    • US08183567B2
    • 2012-05-22
    • US12985144
    • 2011-01-05
    • Su Hyuk KangDai Yun LeeYong In ParkYoung Joo Kim
    • Su Hyuk KangDai Yun LeeYong In ParkYoung Joo Kim
    • H01L31/00H01L29/10H01L20/04
    • H01L29/42384G02F1/13454H01L27/124H01L27/14621H01L29/78621
    • An array substrate for an LCD device includes a first TFT including a first semiconductor layer, a first gate electrode, wherein the first gate electrode is directly over the first semiconductor layer; a first protrusion extending from the first gate electrode along an edge of the first semiconductor layer; a second TFT including a second semiconductor layer, a second gate electrode, wherein the second gate electrode is directly over the second semiconductor layer; a second protrusion extending from the second gate electrode along an edge of the second semiconductor layer; a third TFT connected to crossed data and gate lines including a third semiconductor layer, a third gate electrode, wherein the third gate electrode is directly over the third semiconductor layer; a third protrusion extending from the third gate electrode along an edge of the third semiconductor layer; and a pixel electrode.
    • 用于LCD器件的阵列衬底包括:第一TFT,包括第一半导体层,第一栅电极,其中第一栅电极直接位于第一半导体层上; 从所述第一栅电极沿着所述第一半导体层的边缘延伸的第一突起; 包括第二半导体层的第二TFT,第二栅电极,其中所述第二栅电极直接在所述第二半导体层上; 从所述第二栅电极沿着所述第二半导体层的边缘延伸的第二突起; 连接到交叉数据的第三TFT和包括第三半导体层,第三栅电极的栅极线,其中第三栅极直接在第三半导体层上方; 从所述第三栅电极沿着所述第三半导体层的边缘延伸的第三突起; 和像素电极。
    • 7. 发明授权
    • Array substrate for liquid crystal display device and method of fabricating the same
    • 液晶显示装置用阵列基板及其制造方法
    • US07482628B2
    • 2009-01-27
    • US11449620
    • 2006-06-09
    • Su Hyuk KangDai Yun LeeYong In ParkYoung Joo Kim
    • Su Hyuk KangDai Yun LeeYong In ParkYoung Joo Kim
    • H01L31/00H01L29/10H01L20/04
    • H01L29/42384G02F1/13454H01L27/124H01L27/14621H01L29/78621
    • An array substrate for an LCD device includes a first TFT including a first semiconductor layer, a first gate electrode, wherein the first gate electrode is directly over the first semiconductor layer; a first protrusion extending from the first gate electrode along an edge of the first semiconductor layer; a second TFT including a second semiconductor layer, a second gate electrode, wherein the second gate electrode is directly over the second semiconductor layer; a second protrusion extending from the second gate electrode along an edge of the second semiconductor layer; a third TFT connected to crossed data and gate lines including a third semiconductor layer, a third gate electrode, wherein the third gate electrode is directly over the third semiconductor layer; a third protrusion extending from the third gate electrode along an edge of the third semiconductor layer; and a pixel electrode.
    • 用于LCD器件的阵列衬底包括:第一TFT,包括第一半导体层,第一栅电极,其中第一栅电极直接位于第一半导体层上; 从所述第一栅电极沿着所述第一半导体层的边缘延伸的第一突起; 包括第二半导体层的第二TFT,第二栅电极,其中所述第二栅电极直接在所述第二半导体层上; 从所述第二栅电极沿着所述第二半导体层的边缘延伸的第二突起; 连接到交叉数据的第三TFT和包括第三半导体层,第三栅电极的栅极线,其中第三栅极直接在第三半导体层上方; 从所述第三栅电极沿着所述第三半导体层的边缘延伸的第三突起; 和像素电极。