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    • 1. 发明申请
    • ARRRAY SUBSTRATE FOR LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME
    • 用于液晶显示装置的阵列基板及其制造方法
    • US20110133199A1
    • 2011-06-09
    • US12985144
    • 2011-01-05
    • Su-Hyuk KANGDai Yun LEEYong In PARKYoung Joo KIM
    • Su-Hyuk KANGDai Yun LEEYong In PARKYoung Joo KIM
    • H01L29/786
    • H01L29/42384G02F1/13454H01L27/124H01L27/14621H01L29/78621
    • An array substrate for an LCD device includes a first TFT including a first semiconductor layer, a first gate electrode, wherein the first gate electrode is directly over the first semiconductor layer; a first protrusion extending from the first gate electrode along an edge of the first semiconductor layer; a second TFT including a second semiconductor layer, a second gate electrode, wherein the second gate electrode is directly over the second semiconductor layer; a second protrusion extending from the second gate electrode along an edge of the second semiconductor layer; a third TFT connected to crossed data and gate lines including a third semiconductor layer, a third gate electrode, wherein the third gate electrode is directly over the third semiconductor layer; a third protrusion extending from the third gate electrode along an edge of the third semiconductor layer; and a pixel electrode.
    • 用于LCD器件的阵列衬底包括:第一TFT,包括第一半导体层,第一栅电极,其中第一栅电极直接位于第一半导体层上; 从所述第一栅电极沿着所述第一半导体层的边缘延伸的第一突起; 包括第二半导体层的第二TFT,第二栅电极,其中所述第二栅电极直接在所述第二半导体层上; 从所述第二栅电极沿着所述第二半导体层的边缘延伸的第二突起; 连接到交叉数据的第三TFT和包括第三半导体层,第三栅电极的栅极线,其中第三栅极直接在第三半导体层上方; 从所述第三栅电极沿着所述第三半导体层的边缘延伸的第三突起; 和像素电极。
    • 5. 发明授权
    • Liquid crystal display device and method of fabricating the same
    • 液晶显示装置及其制造方法
    • US07407842B2
    • 2008-08-05
    • US11270583
    • 2005-11-10
    • Dai Yun LeeYong In Park
    • Dai Yun LeeYong In Park
    • H01L21/00
    • H01L27/124H01L27/12H01L29/4908
    • Disclosed herein are a poly type thin film transistor substrate and a fabricating method thereof, which can reduce the number of processing steps without any process defects. The poly type thin film transistor substrate comprises forming transparent lower conductive layer and upper conductive layers on a substrate; forming a photo-resist pattern on the upper conductive layer; patterning the upper conductive layer by using the photo-resist pattern as a mask; ashing the photo-resist pattern so as to remain on the upper conductive layer; patterning the lower conductive layer by a dry etching method using the patterned upper conductive layer as a mask; and removing the remaining photo-resist pattern.
    • 这里公开了一种多晶型薄膜晶体管基板及其制造方法,其可以减少加工步骤的数量而没有任何工艺缺陷。 多晶型薄膜晶体管基板包括在基板上形成透明的下导电层和上导电层; 在上导电层上形成光刻胶图案; 通过使用光刻胶图案作为掩模来图案化上导电层; 灰化所述光刻胶图形以保留在所述上导电层上; 通过使用图案化的上导电层作为掩模的干蚀刻方法图案化下导电层; 并除去剩余的光刻胶图形。
    • 6. 发明授权
    • Liquid crystal display
    • 液晶显示器
    • US07286107B2
    • 2007-10-23
    • US10826282
    • 2004-04-19
    • Dai Yun LeeHan Sang LeeNam Wook Cho
    • Dai Yun LeeHan Sang LeeNam Wook Cho
    • G09G3/20
    • G09G3/3659G09G3/3614G09G2300/0426G09G2300/0842
    • A LCD is adapted to reduce the number of data lines and drive circuits. The LCD can be driven in a dot inversion manner, using a data driver employing column inversion. A gate driver sequentially supplies first and second gate signals to gate lines. First and second switching parts are located in an ith horizontal line and supply video signals from data lines to LC cells by the control of an ith gate line. Third switching parts supply video signals to the cells located in the horizontal line, and are connected to the same data line as the second switching part, and are controlled by the ith and an i−1th gate lines. Fourth switching parts supply video signals to the cells located in the horizontal line and are connected to the same data line as the first switching part, and are controlled by the ith and i−1th gate lines.
    • LCD适用于减少数据线和驱动电路的数量。 使用采用柱反转的数据驱动器可以以点反转方式驱动LCD。 栅极驱动器顺序地向栅极线提供第一和第二栅极信号。 第一和第二开关部分位于第i<<<<>水平线中,并且通过控制第i<<>门线,将来自数据线的视频信号提供给LC单元。 第三开关部分向位于水平线的单元提供视频信号,并且连接到与第二开关部分相同的数据线,并且由第i开关部分和第i开关部分 > th 门线。 第四开关部分将视频信号提供给位于水平线中的单元并且连接到与第一开关部分相同的数据线,并由第i个和第i个第 门线。
    • 7. 发明授权
    • Array substrate for liquid crystal display device and method of fabricating the same
    • 液晶显示装置用阵列基板及其制造方法
    • US08183567B2
    • 2012-05-22
    • US12985144
    • 2011-01-05
    • Su Hyuk KangDai Yun LeeYong In ParkYoung Joo Kim
    • Su Hyuk KangDai Yun LeeYong In ParkYoung Joo Kim
    • H01L31/00H01L29/10H01L20/04
    • H01L29/42384G02F1/13454H01L27/124H01L27/14621H01L29/78621
    • An array substrate for an LCD device includes a first TFT including a first semiconductor layer, a first gate electrode, wherein the first gate electrode is directly over the first semiconductor layer; a first protrusion extending from the first gate electrode along an edge of the first semiconductor layer; a second TFT including a second semiconductor layer, a second gate electrode, wherein the second gate electrode is directly over the second semiconductor layer; a second protrusion extending from the second gate electrode along an edge of the second semiconductor layer; a third TFT connected to crossed data and gate lines including a third semiconductor layer, a third gate electrode, wherein the third gate electrode is directly over the third semiconductor layer; a third protrusion extending from the third gate electrode along an edge of the third semiconductor layer; and a pixel electrode.
    • 用于LCD器件的阵列衬底包括:第一TFT,包括第一半导体层,第一栅电极,其中第一栅电极直接位于第一半导体层上; 从所述第一栅电极沿着所述第一半导体层的边缘延伸的第一突起; 包括第二半导体层的第二TFT,第二栅电极,其中所述第二栅电极直接在所述第二半导体层上; 从所述第二栅电极沿着所述第二半导体层的边缘延伸的第二突起; 连接到交叉数据的第三TFT和包括第三半导体层,第三栅电极的栅极线,其中第三栅极直接在第三半导体层上方; 从所述第三栅电极沿着所述第三半导体层的边缘延伸的第三突起; 和像素电极。
    • 9. 发明授权
    • Array substrate for liquid crystal display device and method of fabricating the same
    • 液晶显示装置用阵列基板及其制造方法
    • US07482628B2
    • 2009-01-27
    • US11449620
    • 2006-06-09
    • Su Hyuk KangDai Yun LeeYong In ParkYoung Joo Kim
    • Su Hyuk KangDai Yun LeeYong In ParkYoung Joo Kim
    • H01L31/00H01L29/10H01L20/04
    • H01L29/42384G02F1/13454H01L27/124H01L27/14621H01L29/78621
    • An array substrate for an LCD device includes a first TFT including a first semiconductor layer, a first gate electrode, wherein the first gate electrode is directly over the first semiconductor layer; a first protrusion extending from the first gate electrode along an edge of the first semiconductor layer; a second TFT including a second semiconductor layer, a second gate electrode, wherein the second gate electrode is directly over the second semiconductor layer; a second protrusion extending from the second gate electrode along an edge of the second semiconductor layer; a third TFT connected to crossed data and gate lines including a third semiconductor layer, a third gate electrode, wherein the third gate electrode is directly over the third semiconductor layer; a third protrusion extending from the third gate electrode along an edge of the third semiconductor layer; and a pixel electrode.
    • 用于LCD器件的阵列衬底包括:第一TFT,包括第一半导体层,第一栅电极,其中第一栅电极直接位于第一半导体层上; 从所述第一栅电极沿着所述第一半导体层的边缘延伸的第一突起; 包括第二半导体层的第二TFT,第二栅电极,其中所述第二栅电极直接在所述第二半导体层上; 从所述第二栅电极沿着所述第二半导体层的边缘延伸的第二突起; 连接到交叉数据的第三TFT和包括第三半导体层,第三栅电极的栅极线,其中第三栅极直接在第三半导体层上方; 从所述第三栅电极沿着所述第三半导体层的边缘延伸的第三突起; 和像素电极。