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    • 4. 发明授权
    • Semiconductor device and method of controlling the same
    • 半导体装置及其控制方法
    • US07565477B2
    • 2009-07-21
    • US11644031
    • 2006-12-22
    • Kenji ShibataMasahiko OkuraKenta KatoMitsuhiro NagaoStewart WangKatherine ButlerCheung Nga Tik
    • Kenji ShibataMasahiko OkuraKenta KatoMitsuhiro NagaoStewart WangKatherine ButlerCheung Nga Tik
    • G06F12/00
    • G06F12/1433G06F2212/2022
    • A semiconductor device includes: memory regions that include non-volatile memory cells; disabling information memory units that correspond to the memory regions, each of the disabling information memory units storing first program disabling information indicating whether programming is to be disabled or enabled in each corresponding memory region; a program disabling information selection circuit that outputs second program disabling information for disabling programming in a corresponding memory region, regardless of the first program disabling information, when programming is disabled collectively in the memory regions in accordance with collective program disabling information indicating whether programming is to be disabled collectively in the memory regions, the program disabling information selection circuit outputting the first program disabling information as the second program disabling information when programming is not collectively disabled; and a program control circuit that disables or enables programming in the corresponding memory region in accordance with the second program disabling information.
    • 半导体器件包括:包括非易失性存储单元的存储器区域; 禁用与存储器区域相对应的信息存储单元,每个禁用信息存储单元存储指示是否在每个对应的存储器区域中禁用或启用编程的第一程序禁用信息; 程序禁用信息选择电路,当根据集合程序禁止信息指示是否编程是否被编程时,输出第二程序禁用信息以禁止在对应的存储器区域中的编程,而不管第一程序禁用信息 在存储区域中集中禁止,程序禁止信息选择电路输出第一程序禁用信息作为编程时的第二程序禁用信息不被集中禁用; 以及程序控制电路,其根据第二程序禁止信息禁止或使得能够在对应的存储器区域中进行编程。
    • 5. 发明申请
    • Semiconductor device and method of controlling the same
    • 半导体装置及其控制方法
    • US20080155180A1
    • 2008-06-26
    • US11644031
    • 2006-12-22
    • Kenji ShibataMasahiko OkuraKenta KatoMitsuhiro NagaoStewart WangKatherine ButlerCheung Nga Tik
    • Kenji ShibataMasahiko OkuraKenta KatoMitsuhiro NagaoStewart WangKatherine ButlerCheung Nga Tik
    • G06F12/02
    • G06F12/1433G06F2212/2022
    • A semiconductor device includes: memory regions that include non-volatile memory cells; disabling information memory units that correspond to the memory regions, each of the disabling information memory units storing first program disabling information indicating whether programming is to be disabled or enabled in each corresponding memory region; a program disabling information selection circuit that outputs second program disabling information for disabling programming in a corresponding memory region, regardless of the first program disabling information, when programming is disabled collectively in the memory regions in accordance with collective program disabling information indicating whether programming is to be disabled collectively in the memory regions, the program disabling information selection circuit outputting the first program disabling information as the second program disabling information when programming is not collectively disabled; and a program control circuit that disables or enables programming in the corresponding memory region in accordance with the second program disabling information.
    • 半导体器件包括:包括非易失性存储单元的存储器区域; 禁用与存储器区域相对应的信息存储单元,每个禁用信息存储单元存储指示是否在每个对应的存储器区域中禁用或启用编程的第一程序禁用信息; 程序禁用信息选择电路,当根据集合程序禁止信息指示是否编程是否被编程时,输出第二程序禁用信息以禁止在对应的存储器区域中的编程,而不管第一程序禁用信息 在存储区域中集中禁止,程序禁止信息选择电路输出第一程序禁用信息作为编程时的第二程序禁用信息不被集中禁用; 以及程序控制电路,其根据第二程序禁止信息禁止或使得能够在对应的存储器区域中进行编程。