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    • 1. 发明申请
    • Interconnect structure using through wafer vias and method of fabrication
    • 通过晶片通孔和制造方法的互连结构
    • US20080079120A1
    • 2008-04-03
    • US11541774
    • 2006-10-03
    • John S. FosterSteven H. HoveyPaul J. RubelKimon Rybnicek
    • John S. FosterSteven H. HoveyPaul J. RubelKimon Rybnicek
    • H01L29/06H01L21/30
    • B81B7/007B81B2201/014B81B2207/092
    • A device and a method are described which hermetically seals at least one microstructure within a cavity. Electrical access to the at least one microstructure is provided by through wafer vias formed through a via substrate which supports the at least one microstructure on its front side. The via substrate and a lid wafer may form a hermetic cavity which encloses the at least one microstructure. The through wafer vias are connected to bond pads located outside the cavity by an interconnect structure formed on the back side of the via substrate. Because they are outside the cavity, the bond pads may be placed inside the perimeter of the bond line forming the cavity, thereby greatly reducing the area occupied by the device. The through wafer vias also shorten the circuit length between the microstructure and the interconnect, thus improving heat transfer and signal loss in the device.
    • 描述了一种在空腔内气密地密封至少一个微结构的装置和方法。 通过通过在其前侧支撑至少一个微结构的通孔基板形成的通过晶片通孔提供对至少一个微结构的电接入。 通孔基板和盖子晶片可以形成封闭至少一个微结构的密封腔。 贯通晶片通孔通过形成在通孔基板的背面上的互连结构连接到位于空腔外部的接合焊盘。 因为它们在空腔外部,所以接合焊盘可以放置在形成空腔的接合线的周边内部,从而大大减小了器件所占据的面积。 贯通晶片通孔也缩短了微结构与互连之间的电路长度,从而改善了器件中的传热和信号损失。
    • 9. 发明授权
    • Interconnect structure using through wafer vias and method of fabrication
    • 通过晶片通孔和制造方法的互连结构
    • US07675162B2
    • 2010-03-09
    • US11541774
    • 2006-10-03
    • John S. FosterSteven H. HoveyPaul J. RubelKimon Rybnicek
    • John S. FosterSteven H. HoveyPaul J. RubelKimon Rybnicek
    • H01L23/10
    • B81B7/007B81B2201/014B81B2207/092
    • A device and a method are described which hermetically seals at least one microstructure within a cavity. Electrical access to the at least one microstructure is provided by through wafer vias formed through a via substrate which supports the at least one microstructure on its front side. The via substrate and a lid wafer may form a hermetic cavity which encloses the at least one microstructure. The through wafer vias are connected to bond pads located outside the cavity by an interconnect structure formed on the back side of the via substrate. Because they are outside the cavity, the bond pads may be placed inside the perimeter of the bond line forming the cavity, thereby greatly reducing the area occupied by the device. The through wafer vias also shorten the circuit length between the microstructure and the interconnect, thus improving heat transfer and signal loss in the device.
    • 描述了一种在空腔内气密地密封至少一个微结构的装置和方法。 通过通过在其前侧支撑至少一个微结构的通孔基板形成的通过晶片通孔提供对至少一个微结构的电接触。 通孔基板和盖子晶片可以形成封闭至少一个微结构的密封腔。 贯通晶片通孔通过形成在通孔基板的背面上的互连结构连接到位于空腔外部的接合焊盘。 因为它们在空腔外部,所以接合焊盘可以放置在形成空腔的接合线的周边内部,从而大大减小了器件所占据的面积。 贯通晶片通孔也缩短了微结构与互连之间的电路长度,从而改善了器件中的传热和信号损失。