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1. 发明授权

US06538262B1 Nanotube junctions 失效
标题翻译：纳米管路口
公开(公告)号：US06538262B1
公开(公告)日：2003-03-25
申请号：US08792461
申请日：1997-01-31
申请人： Vincent Henry Crespi , Marvin Lou Cohen , Steven Gwon Sheng Louie , Alexander Karlwalter Zettl
发明人： Vincent Henry Crespi , Marvin Lou Cohen , Steven Gwon Sheng Louie , Alexander Karlwalter Zettl
IPC分类号： D01F912
CPC分类号： B82Y30/00 , D01F9/12 , Y10S977/734 , Y10S977/742 , Y10S977/848 , Y10T428/30
摘要： The present invention comprises a new nanoscale metal-semiconductor, semiconductor-semiconductor, or metal-metal junction, designed by introducing topological or chemical defects in the atomic structure of the nanotube. Nanotubes comprising adjacent sections having differing electrical properties are described. These nanotubes can be constructed from combinations of carbon, boron, nitrogen and other elements. The nanotube can be designed having different indices on either side of a junction point in a continuous tube so that the electrical properties on either side of the junction vary in a useful fashion. For example, the inventive nanotube may be electrically conducting on one side of a junction and semiconducting on the other side. An example of a semiconductor-metal junction is a Schottky barrier. Alternatively, the nanotube may exhibit different semiconductor properties on either side of the junction. Nanotubes containing heterojunctions, Schottky barriers, and metal-metal junctions are useful for microcircuitry.
摘要翻译：本发明包括通过在纳米管的原子结构中引入拓扑或化学缺陷而设计的新的纳米级金属半导体，半导体半导体或金属 - 金属结。描述了包括具有不同电特性的相邻部分的纳米管。这些纳米管可以由碳，硼，氮和其他元素的组合构成。纳米管可以设计成在连续管中的连接点的任一侧上具有不同的指数，使得连接的任一侧上的电性质以有用的方式变化。例如，本发明的纳米管可以在结的一侧上导电并且在另一侧上是半导体的。半导体 - 金属结的实例是肖特基势垒。或者，纳米管可以在结的两侧表现出不同的半导体特性。含有异质结的纳米管，肖特基势垒和金属 - 金属结可用于微电路。

2. 发明申请

US20150235799A1 VERSATILE SPIN-POLARIZED ELECTRON SOURCE 有权
标题翻译：多极旋转极化电子源
公开(公告)号：US20150235799A1
公开(公告)日：2015-08-20
申请号：US14185651
申请日：2014-02-20
申请人： Chris Jozwiak , Cheol Hwan Park , Kenneth Gotlieb , Steven Gwon Sheng Louie , Zahid Hussain , Alessandra Lanzara
发明人： Chris Jozwiak , Cheol Hwan Park , Kenneth Gotlieb , Steven Gwon Sheng Louie , Zahid Hussain , Alessandra Lanzara
IPC分类号： H01J1/34 , H01J43/18 , H01J40/16 , H01J1/36
CPC分类号： H01L29/66007 , G21K1/16 , H01J1/34 , H01L29/66984
摘要： One or more embodiments relate generally to the field of photoelectron spin and, more specifically, to a method and system for creating a controllable spin-polarized electron source. One preferred embodiment of the invention generally comprises: method for creating a controllable spin-polarized electron source comprising the following steps: providing one or more materials, the one or more materials having at least one surface and a material layer adjacent to said surface, wherein said surface comprises highly spin-polarized surface electrons, wherein the direction and spin of the surface electrons are locked together; providing at least one incident light capable of stimulating photoemission of said surface electrons; wherein the photon polarization of said incident light is tunable; and inducing photoemission of the surface electron states.
摘要翻译：一个或多个实施方案一般涉及光电子自旋的领域，更具体地涉及用于产生可控自旋极化电子源的方法和系统。本发明的一个优选实施方案通常包括：用于产生可控自旋极化电子源的方法，包括以下步骤：提供一种或多种材料，所述一种或多种材料具有至少一个表面和与所述表面相邻的材料层，其中所述表面包括高度自旋极化的表面电子，其中表面电子的方向和自旋锁定在一起; 提供能够刺激所述表面电子的光电子发射的至少一个入射光; 其中所述入射光的光子偏振是可调的; 并诱导表面电子态的光电子发射。

3. 发明授权

US5993697A Metallic carbon materials 失效
标题翻译：金属碳材料
公开(公告)号：US5993697A
公开(公告)日：1999-11-30
申请号：US649143
申请日：1996-05-14
申请人： Marvin Lou Cohen , Vincent Henry Crespi , Steven Gwon Sheng Louie , Alexander Karlwalter Zettl
发明人： Marvin Lou Cohen , Vincent Henry Crespi , Steven Gwon Sheng Louie , Alexander Karlwalter Zettl
IPC分类号： C01B31/02 , H01B1/04 , C01B31/00
CPC分类号： H01B1/04 , C01B31/02 , Y10S977/843 , Y10S977/844
摘要： Novel metallic forms of planar carbon are described, as well as methods of designing and making them. Nonhexagonal arrangements of carbon are introduced into a graphite carbon network essentially without destroying the planar structure. Specifically a form of carbon comprising primarily pentagons and heptagons, and having a large density of states at the Fermi level is described. Other arrangements of pentagons and heptagons that include some hexagons, and structures incorporating squares and octagons are additionally disclosed. Reducing the bond angle symmetry associated with a hexagonal arrangement of carbons increases the likelihood that the carbon material will have a metallic electron structure.
摘要翻译：描述了新型金属形式的平面碳，以及设计和制造它们的方法。碳的非六边形布置基本上被引入石墨碳网络中而不破坏平面结构。具体描述了主要包括五边形和七边形并且在费米能级具有大密度状态的碳的形式。还公开了包括一些六边形的五边形和七边形的其他布置，以及结合正方形和八边形的结构。减少与六方排列碳键相关联的键角对称增加了碳材料将具有金属电子结构的可能性。

4. 发明授权

US06835952B2 Nanotube junctions 失效
标题翻译：纳米管路口
公开(公告)号：US06835952B2
公开(公告)日：2004-12-28
申请号：US10393818
申请日：2003-03-21
申请人： Vincent Henry Crespi , Marvin Lou Cohen , Steven Gwon Sheng Louie , Alexander Karlwalter Zettl
发明人： Vincent Henry Crespi , Marvin Lou Cohen , Steven Gwon Sheng Louie , Alexander Karlwalter Zettl
IPC分类号： H01L3524
CPC分类号： B82Y30/00 , D01F9/12 , Y10S977/734 , Y10S977/742 , Y10S977/848 , Y10T428/30
摘要： The present invention comprises a new nanoscale metal-semiconductor, semiconductor-semiconductor, or metal-metal junction, designed by introducing topological or chemical defects in the atomic structure of the nanotube. Nanotubes comprising adjacent sections having differing electrical properties are described. These nanotubes can be constructed from combinations of carbon, boron, nitrogen and other elements. The nanotube can be designed having different indices on either side of a junction point in a continuous tube so that the electrical properties on either side of the junction vary in a useful fashion. For example, the inventive nanotube may be electrically conducting on one side of a junction and semiconducting on the other side. An example of a semiconductor-metal junction is a Schottky barrier. Alternatively, the nanotube may exhibit different semiconductor properties on either side of the junction. Nanotubes containing heterojunctions, Schottky barriers, and metal-metal junctions are useful for microcircuitry.
摘要翻译：本发明包括通过在纳米管的原子结构中引入拓扑或化学缺陷而设计的新的纳米级金属半导体，半导体半导体或金属 - 金属结。描述了包括具有不同电特性的相邻部分的纳米管。这些纳米管可以由碳，硼，氮和其他元素的组合构成。纳米管可以设计成在连续管中的连接点的任一侧上具有不同的指数，使得连接的任一侧上的电性质以有用的方式变化。例如，本发明的纳米管可以在结的一侧上导电并且在另一侧上是半导体的。半导体 - 金属结的实例是肖特基势垒。或者，纳米管可以在结的两侧表现出不同的半导体特性。含有异质结的纳米管，肖特基势垒和金属 - 金属结可用于微电路。

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