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1. 发明授权

US07888292B2 Nano-chem-FET based biosensors 有权
标题翻译：基于纳米化学FET的生物传感器
公开(公告)号：US07888292B2
公开(公告)日：2011-02-15
申请号：US11874412
申请日：2007-10-18
申请人： Larry Bock , R. Hugh Daniels , Stephen Empedocles , John C. Owicki
发明人： Larry Bock , R. Hugh Daniels , Stephen Empedocles , John C. Owicki
IPC分类号： C40B30/00
CPC分类号： G01N27/4146 , B82Y5/00 , C12Q1/001 , C12Q1/6825 , G01N33/54366 , Y10T436/144444
摘要： Methods of detecting a component of interest, a change in charge, a pH, a cellular response using nanosensors are provided. Nanosensors, including nanowires and nanowire arrays comprising functionalized and/or non-functionalized nanowires are provided. Nanosensors are used for detection in cellular fragmentation, multiple concentration analysis, glucose detection, and intracellular analysis.
摘要翻译：提供了检测感兴趣的组分，电荷变化，pH，使用纳米传感器的细胞反应的方法。提供包括纳米线和包含官能化和/或非官能化纳米线的纳米线阵列的纳米传感器。纳米传感器用于细胞分裂，多重浓度分析，葡萄糖检测和细胞内分析中的检测。

2. 发明申请

US20100155696A1 Large-Area Nanoenabled Macroelectronic Substrates and Uses Therefor 有权
标题翻译：大面积纳米大电子基板及其用途
公开(公告)号：US20100155696A1
公开(公告)日：2010-06-24
申请号：US11681058
申请日：2007-03-01
申请人： Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Wallace Parce , Jay L. Goldman
发明人： Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Wallace Parce , Jay L. Goldman
IPC分类号： H01L29/66 , H01L21/20
CPC分类号： H01L29/0665 , B82Y10/00 , H01F1/405 , H01L27/092 , H01L27/12 , H01L27/1292 , H01L29/0673 , H01L29/068 , H01L29/78696 , H01L31/035281 , H01L33/18 , H01L33/20 , H01L33/24 , H01L51/0048 , H01L51/0504 , H01L51/0545 , H01L51/0595 , Y10S977/742 , Y10S977/762 , Y10S977/781 , Y10S977/789 , Y10S977/938
摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
摘要翻译：描述了具有多个半导体器件的电子基片的方法和装置。在衬底上形成纳米线薄膜。纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。在纳米线的薄膜中限定多个半导体区域。在半导体器件区域处形成触点，从而提供与多个半导体器件的电连接。此外，用于制造纳米线的各种材料，包括p掺杂纳米线和n掺杂纳米线的薄膜，纳米线异质结构，发光纳米线异质结构，用于在衬底上定位纳米线的流动掩模，用于沉积纳米线的纳米线喷涂技术，用于减少或消除声子的技术描述了纳米线中的电子散射，以及用于降低纳米线中的表面状态的技术。

3. 发明申请

US20090010608A1 Nanocomposites 有权
标题翻译：纳米复合材料
公开(公告)号：US20090010608A1
公开(公告)日：2009-01-08
申请号：US12212014
申请日：2008-09-17
申请人： Mihai Buretea , Stephen Empedocles , Chunming Niu , Erik C. Scher
发明人： Mihai Buretea , Stephen Empedocles , Chunming Niu , Erik C. Scher
IPC分类号： G02B6/02
CPC分类号： G02B1/045 , B82Y20/00 , B82Y30/00 , C03C14/006 , C03C2214/16 , C08L83/04 , F24S23/12 , G02F2202/36 , H01L31/0547 , H01L31/055 , H01S3/0632 , H01S3/169 , H01S5/10 , Y02E10/40 , Y02E10/52 , Y10T428/29 , C08L83/00
摘要： This invention provides composite materials comprising nanostructures (e.g., nanowires, branched nanowires, nanotetrapods, nanocrystals, and nanoparticles). Methods and compositions for making such nanocomposites are also provided, as are articles comprising such composites. Waveguides and light concentrators comprising nanostructures (not necessarily as part of a nanocomposite) are additional features of the invention.
摘要翻译：本发明提供了包含纳米结构（例如纳米线，支链纳米线，纳米四极体，纳米晶体和纳米颗粒）的复合材料。还提供了制备这种纳米复合材料的方法和组合物，以及包含这种复合材料的制品。包含纳米结构（不一定作为纳米复合材料的一部分）的波导和聚光器是本发明的附加特征。

4. 发明授权

US07151209B2 Methods of making, positioning and orienting nanostructures, nanostructure arrays and nanostructure devices 有权
标题翻译：制备，定位和取向纳米结构，纳米结构阵列和纳米结构器件的方法
公开(公告)号：US07151209B2
公开(公告)日：2006-12-19
申请号：US11142563
申请日：2005-05-31
申请人： Stephen Empedocles , Larry Bock , Calvin Y. H. Chow , Xianfeng Duan , Chunming Niu , George Pontis , Vijendra Sahi , Linda T. Romano , David Stumbo
发明人： Stephen Empedocles , Larry Bock , Calvin Y. H. Chow , Xianfeng Duan , Chunming Niu , George Pontis , Vijendra Sahi , Linda T. Romano , David Stumbo
IPC分类号： H01L21/302
CPC分类号： H01L51/0048 , B01J23/52 , B81B2203/0361 , B81B2207/015 , B81C3/005 , B81C99/008 , B81C2203/057 , B82B3/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , G11B5/743 , G11C2213/81 , H01L29/7869 , H01L51/0001 , H01L51/0595 , H01L2924/0002 , Y10S438/962 , Y10S977/762 , Y10S977/856 , Y10S977/857 , Y10S977/858 , Y10S977/89 , H01L2924/00
摘要： Nanostructure manufacturing methods and methods for assembling nanostructures into functional elements such as junctions, arrays and devices are provided. Systems for practicing the methods are also provided.
摘要翻译：提供了将纳米结构组装成功能元件如结，阵列和器件的纳米结构制造方法和方法。还提供了实施方法的系统。

5. 发明申请

US20060244963A1 SPATIAL POSITIONING OF SPECTRALLY LABELED BEADS 审中-公开
公开(公告)号：US20060244963A1
公开(公告)日：2006-11-02
申请号：US11425851
申请日：2006-06-22
申请人： Stephen Empedocles , Andrew Watson , Jian Jin
发明人： Stephen Empedocles , Andrew Watson , Jian Jin
IPC分类号： G01J3/28 , G01J3/00
CPC分类号： G01N21/272 , B01J2219/00317 , B01J2219/00432 , B01J2219/005 , B01J2219/00574 , B01J2219/00576 , B01J2219/00578 , B01J2219/00585 , B01J2219/00596 , B01J2219/00648 , B01J2219/00657 , B01J2219/00659 , B01J2219/00677 , B01J2219/00707 , B01J2219/00722 , B01J2219/00743 , B01L3/5025 , B01L3/502715 , B01L3/502761 , B01L3/5085 , B01L3/545 , B01L2200/0668 , B01L2300/021 , B01L2300/0819 , B01L2300/0829 , B01L2400/0454 , B01L2400/0457 , B82Y30/00 , C40B40/06 , C40B60/14 , G01N21/25 , G01N21/253 , G01N21/274 , G01N21/278 , G01N21/6428 , G01N21/6452 , G01N21/6456 , G01N21/6486 , G01N21/6489 , G01N33/54373 , G01N2015/0092 , G01N2015/1472 , G01N2015/1497 , G01N2021/6441 , G01N2021/6482 , G01N2035/00158 , G01N2035/00742 , G01N2035/00752 , G01N2201/04 , G01N2201/06113 , G01N2201/12
摘要： Devices, systems, kits, and methods for detecting and/or identifying a plurality of spectrally labeled bodies well-suited for performing multiplexed assays. By spectrally labeling the beads with materials which generate identifiable spectra, a plurality of beads may be identified within the fluid. Reading of the beads is facilitated by restraining the beads in arrays, and/or using a focused laser.

6. 发明授权

US07067867B2 Large-area nonenabled macroelectronic substrates and uses therefor 有权
标题翻译：大面积未使用的大电子基板及其用途
公开(公告)号：US07067867B2
公开(公告)日：2006-06-27
申请号：US10674060
申请日：2003-09-30
申请人： Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Wallace Parce , Jay L. Goldman
发明人： Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Wallace Parce , Jay L. Goldman
IPC分类号： H01L27/108 , H01L29/94 , H01L29/76 , H01L21/336 , H01L21/8234
CPC分类号： H01L29/78696 , B82Y10/00 , G11C13/025 , G11C2213/17 , G11C2213/18 , H01L24/95 , H01L27/1292 , H01L29/04 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L29/78684 , H01L29/7869 , H01L33/20 , H01L51/0048 , H01L51/0052 , H01L51/0541 , H01L51/0545 , H01L2924/12032 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/00
摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
摘要翻译：描述了具有多个半导体器件的电子基片的方法和装置。在衬底上形成纳米线薄膜。纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。在纳米线的薄膜中限定多个半导体区域。在半导体器件区域处形成触点，从而提供与多个半导体器件的电连接。此外，用于制造纳米线的各种材料，包括p掺杂纳米线和n掺杂纳米线的薄膜，纳米线异质结构，发光纳米线异质结构，用于在衬底上定位纳米线的流动掩模，用于沉积纳米线的纳米线喷涂技术，用于减少或消除声子的技术描述了纳米线中的电子散射，以及用于降低纳米线中的表面状态的技术。

7. 发明申请

US20080041814A1 Systems and Methods for Harvesting and Integrating Nanowires 有权
标题翻译：收获和整合纳米线的系统和方法
公开(公告)号：US20080041814A1
公开(公告)日：2008-02-21
申请号：US11839778
申请日：2007-08-16
申请人： Linda Romano , Jian Chen , Xiangfeng Duan , Robert Dubrow , Stephen Empedocles , Jay Goldman , James Hamilton , David Heald , Francesco Lemmi , Chunming Niu , Yaoling Pan , George Pontis , Vijendra Sahi , Erik Scher , David Stumbo , Jeffery Whiteford
发明人： Linda Romano , Jian Chen , Xiangfeng Duan , Robert Dubrow , Stephen Empedocles , Jay Goldman , James Hamilton , David Heald , Francesco Lemmi , Chunming Niu , Yaoling Pan , George Pontis , Vijendra Sahi , Erik Scher , David Stumbo , Jeffery Whiteford
IPC分类号： B32B9/00 , H01B13/00
CPC分类号： C30B29/605 , B82Y10/00 , C30B11/12 , H01L21/02439 , H01L21/02513 , H01L21/02521 , H01L21/02532 , H01L21/02603 , H01L21/02606 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/125 , H01L29/66469 , H01L29/775 , H01L29/78684 , H01L29/7869 , H01L29/78696 , H01L51/0048 , Y10S977/762 , Y10S977/938 , Y10T428/139 , Y10T428/2902 , Y10T428/2949
摘要： The present invention is directed to methods to harvest, integrate and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides methods for harvesting nanowires that include selectively etching a sacrificial layer placed on a nanowire growth substrate to remove nanowires. The invention also provides methods for integrating nanowires into electronic devices that include placing an outer surface of a cylinder in contact with a fluid suspension of nanowires and rolling the nanowire coated cylinder to deposit nanowires onto a surface. Methods are also provided to deposit nanowires using an ink-jet printer or an aperture to align nanowires. Additional aspects of the invention provide methods for preventing gate shorts in nanowire based transistors. Additional methods for harvesting and integrating nanowires are provided.
摘要翻译：本发明涉及收获，整合和利用纳米材料，特别是细长的纳米线材料的方法。本发明提供了收获纳米线的方法，其包括选择性地蚀刻放置在纳米线生长衬底上以去除纳米线的牺牲层。本发明还提供了将纳米线整合到电子器件中的方法，包括将圆筒的外表面与纳米线的流体悬浮液接触并滚动纳米线涂覆的圆筒以将纳米线沉积到表面上。还提供了使用喷墨打印机或孔径以纳米线排列纳米线的方法。本发明的另外的方面提供了用于防止基于纳米线的晶体管中的栅极短路的方法。提供了收获和集成纳米线的其他方法。

8. 发明申请

US20070228439A1 Large-Area Nanoenabled Macroelectronic Substrates and Uses Therefor 有权
标题翻译：大面积纳米大电子基板及其用途
公开(公告)号：US20070228439A1
公开(公告)日：2007-10-04
申请号：US11760382
申请日：2007-06-08
申请人： Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Parce , Jay Goldman
发明人： Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Parce , Jay Goldman
IPC分类号： H01L29/786
CPC分类号： H01L29/0665 , B82Y10/00 , H01F1/405 , H01L27/092 , H01L27/12 , H01L27/1292 , H01L29/0673 , H01L29/068 , H01L29/78696 , H01L31/035281 , H01L33/18 , H01L33/20 , H01L33/24 , H01L51/0048 , H01L51/0504 , H01L51/0545 , H01L51/0595 , Y10S977/742 , Y10S977/762 , Y10S977/781 , Y10S977/789 , Y10S977/938
摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
摘要翻译：描述了具有多个半导体器件的电子基片的方法和装置。在衬底上形成纳米线薄膜。纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。在纳米线的薄膜中限定多个半导体区域。在半导体器件区域处形成触点，从而提供与多个半导体器件的电连接。此外，用于制造纳米线的各种材料，包括p掺杂纳米线和n掺杂纳米线的薄膜，纳米线异质结构，发光纳米线异质结构，用于在衬底上定位纳米线的流动掩模，用于沉积纳米线的纳米线喷涂技术，用于减少或消除声子的技术描述了纳米线中的电子散射，以及用于降低纳米线中的表面状态的技术。

9. 发明申请

US20060256059A1 Integrated displays using nanowire transistors 有权
标题翻译：使用纳米线晶体管的集成显示器
公开(公告)号：US20060256059A1
公开(公告)日：2006-11-16
申请号：US11490630
申请日：2006-07-21
申请人： Dave Stumbo , Stephen Empedocles
发明人： Dave Stumbo , Stephen Empedocles
IPC分类号： G09G3/36
CPC分类号： H01L27/1222 , B82Y10/00 , B82Y20/00 , B82Y30/00 , G02F1/13454 , G02F2202/36 , G09G3/20 , G09G3/3648 , G09G2300/08 , G11C13/025 , H01L27/1214 , H01L27/283 , H01L27/3262 , H01L29/0665 , H01L29/0673 , H01L51/0048 , H01L51/0512
摘要： The present invention is directed to a display using nanowire transistors. In particular, a liquid crystal display using nanowire pixel transistors, nanowire row transistors, nanowire column transistors and nanowire edge electronics is described. A nanowire pixel transistor is used to control the voltage applied across a pixel containing liquid crystals. A pair of nanowire row transistors is used to turn nanowire pixel transistors that are located along a row trace connected to the pair of nanowire row transistors on and off. Nanowire column transistors are used to apply a voltage across nanowire pixel transistors that are located along a column trace connected to a nanowire column transistor. Displays including organic light emitting diodes (OLED) displays, nanotube field effect displays, plasma displays, micromirror displays, micoelectromechanical (MEMs) displays, electrochromic displays and electrophoretic displays using nanowire transistors are also provided.
摘要翻译：本发明涉及使用纳米线晶体管的显示器。特别地，描述了使用纳米线像素晶体管，纳米线行晶体管，纳米线列晶体管和纳米线边缘电子器件的液晶显示器。纳米线像素晶体管用于控制跨越包含液晶的像素施加的电压。一对纳米线行晶体管用于转换沿着连接到该对纳米线行晶体管的行迹线的导通和截止的纳米线像素晶体管。纳米线列晶体管用于沿着连接到纳米线柱晶体管的列迹线设置的纳米线像素晶体管施加电压。还提供了包括有机发光二极管（OLED）显示器，纳米管场效应显示器，等离子体显示器，微镜显示器，微机电（MEM））显示器，电致变色显示器和使用纳米线晶体管的电泳显示器的显示器。

10. 发明申请

US20060211183A1 Large-area nanoenabled macroelectronic substrates and uses therefor 有权
公开(公告)号：US20060211183A1
公开(公告)日：2006-09-21
申请号：US11405864
申请日：2006-04-18
申请人： Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Parce , Jay Goldman
发明人： Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Parce , Jay Goldman
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L29/78696 , B82Y10/00 , G11C13/025 , G11C2213/17 , G11C2213/18 , H01L24/95 , H01L27/1292 , H01L29/04 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L29/78684 , H01L29/7869 , H01L33/20 , H01L51/0048 , H01L51/0052 , H01L51/0541 , H01L51/0545 , H01L2924/12032 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/00
摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

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