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    • 2. 发明授权
    • Liquid crystal displays using organic insulating material and manufacturing methods thereof
    • 使用有机绝缘材料的液晶显示器及其制造方法
    • US07973905B2
    • 2011-07-05
    • US11036222
    • 2005-01-18
    • Soo-Guy RhoJung-Ho Lee
    • Soo-Guy RhoJung-Ho Lee
    • G02F1/1339
    • G02F1/136213G02F1/136209G02F1/136227G02F2001/133357
    • A passivation layer is formed by coating a flowable insulating material on the substrate where a thin film transistor and a storage capacitor electrode, and a pixel electrode is formed on the passivation layer. A portion of the passivation layer is etched using the pixel electrode as a mask to make a groove on the thin film transistor, and then a black matrix is formed by filling an organic black photoresist in the groove. To increase the storage capacitance, a portion of the passivation layer is removed or to form a metal pattern on the storage capacitor electrode. A flowable insulating material is used as a gate insulating layer to planarize the substrate. In the case of the etch stopper type thin film transistor, a photo definable material is used as the etch stopper layer to reduce the parasitic capacitance between the gate electrode and the drain electrode.
    • 通过在基板上涂布可流动的绝缘材料形成钝化层,在钝化层上形成薄膜晶体管和存储电容器电极以及像素电极。 使用像素电极作为掩模蚀刻钝化层的一部分,以在薄膜晶体管上形成沟槽,然后通过在沟槽中填充有机黑色光致抗蚀剂形成黑色矩阵。 为了增加存储电容,去除钝化层的一部分或在存储电容器电极上形成金属图案。 使用可流动绝缘材料作为栅极绝缘层来平坦化基板。 在蚀刻停止型薄膜晶体管的情况下,使用光可定义材料作为蚀刻停止层,以减小栅电极和漏电极之间的寄生电容。
    • 6. 发明授权
    • Thin film transistor array panel for liquid crystal display
    • 薄膜晶体管阵列面板用于液晶显示
    • US07220991B2
    • 2007-05-22
    • US10660779
    • 2003-09-12
    • Mun-Pyo HongWan-Shick HongSang-Il KimSoo-Guy RhoJin-Kyu KangSnag-Gab Kim
    • Mun-Pyo HongWan-Shick HongSang-Il KimSoo-Guy RhoJin-Kyu KangSnag-Gab Kim
    • H01L29/04H01L31/036H01L31/0376H01L31/20
    • G02F1/136227G02F1/136209G02F1/136286G02F2001/136222H01L27/12H01L27/1255H01L27/1288H01L29/42384H01L29/4908
    • A black matrix having an opening at pixels of a matrix array in a display area, a common wire including common pads and common signal lines, and gate pads in a peripheral area, and an alignment key in outer area to align interlayer thin films are formed on an insulating substrate. Red, blue and green color filters the edge of which overlap the black matrix are formed at the pixels on the insulating substrate, and an organic insulating layer covering the black matrix and the color filters and having a contact hole exposing the gate pad is formed thereon. A gate wire including a gate line connected to the gate pad through the contact hole and a gate electrode connected to the gate line is formed on the organic insulating layer, and a gate insulating layer covering the gate wire is formed on the organic insulating layer. A semiconductor pattern and ohmic contact layers are sequentially formed on the gate insulating layer of the gate electrode. A data wire including a source electrode and a drain electrode that are made of a same layer on the ohmic contact layers and separated from each other, and a data line connected to the source electrode and defining the pixels of a matrix array by crossing the gate line is formed on the gate insulating layer. A passivation layer covering the data wire and having contact holes exposing the gate pad and the data pad is formed, and a pixel wire including a pixel electrode, a redundant gate pad, a redundant data pad that are respectively connected to the drain electrode, the gate pad and the data pad through the contact holes.
    • 形成在显示区域中具有矩阵阵列的像素的开口的黑矩阵,包括公共焊盘和公共信号线的公共线,以及外围区域中的栅极焊盘以及外部区域中的对准键来对准层间薄膜 在绝缘基板上。 在绝缘基板上的像素处形成与黑矩阵重叠的边缘的红色,蓝色和绿色滤色片,并且在其上形成覆盖黑矩阵和滤色器并且具有暴露栅极接触孔的接触孔的有机绝缘层 。 在有机绝缘层上形成包括通过接触孔连接到栅极焊盘的栅极线和连接到栅极线的栅极的栅极线,并且在有机绝缘层上形成覆盖栅极线的栅极绝缘层。 半导体图案和欧姆接触层依次形成在栅电极的栅极绝缘层上。 一种数据线,包括在欧姆接触层上由相同层制成并彼此分离的源电极和漏电极,以及连接到源电极并通过跨越栅极定义矩阵阵列的像素的数据线 线形成在栅极绝缘层上。 形成覆盖数据线并具有露出栅极焊盘和数据焊盘的接触孔的钝化层,并且包括分别连接到漏电极的像素电极,冗余栅极焊盘,冗余数据焊盘的像素线, 栅极焊盘和数据焊盘通过接触孔。