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1. 发明授权

US08121660B2 Semi-automatically sliding mobile terminal 有权
标题翻译：半自动滑动移动终端
公开(公告)号：US08121660B2
公开(公告)日：2012-02-21
申请号：US12332640
申请日：2008-12-11
申请人： Sang Chun Park , Jin Kyu Kang
发明人： Sang Chun Park , Jin Kyu Kang
IPC分类号： H04M1/00
CPC分类号： H04M1/0237
摘要： A semi-automatically sliding mobile terminal includes a first main body, a second main body, a hinge unit, and a guide line. The second main body slides on the upper side of the first main body. The hinge unit includes a coupler coupled to the first main body and a spring unit compressing and expanding in a lateral direction. The guide unit includes a curved line having an ascending curved line, a crest, and a descending curved line that are formed in a longitudinal direction. When the second main body moves, the spring unit compresses or expands along the guide line. The spring unit compresses before passing over the crest and expands after passing over the crest. After the crest, the second main body moves semi-automatically due to elastic force of the spring unit.
摘要翻译：半自动滑动移动终端包括第一主体，第二主体，铰链单元和引导线。第二主体在第一主体的上侧滑动。铰链单元包括联接到第一主体的联接器和沿横向方向压缩和膨胀的弹簧单元。引导单元包括沿纵向形成的具有上升曲线，波峰和下降曲线的曲线。当第二主体移动时，弹簧单元沿着引导线压缩或扩展。弹簧单元在通过顶部之前压缩并在通过顶部之后膨胀。在波峰之后，第二主体由于弹簧单元的弹力而半自动移动。

2. 发明申请

US20110215392A1 Semiconductor Devices and Methods of Manufacturing the Same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110215392A1
公开(公告)日：2011-09-08
申请号：US13037502
申请日：2011-03-01
申请人： Jeeyong Kim , WoonKyung Lee , Sunggil Kim , Jin-Kyu Kang , Jung-Hwan Lee , Bonyoung Koo , Kihyun Hwang , Byoungsun Ju , Jintae Noh
发明人： Jeeyong Kim , WoonKyung Lee , Sunggil Kim , Jin-Kyu Kang , Jung-Hwan Lee , Bonyoung Koo , Kihyun Hwang , Byoungsun Ju , Jintae Noh
IPC分类号： H01L29/788 , H01L21/28 , H01L23/48 , H01L29/792
CPC分类号： H01L27/11526 , H01L21/28 , H01L21/76841 , H01L23/48 , H01L23/535 , H01L27/11521 , H01L27/11568 , H01L27/11573 , H01L29/4958 , H01L29/78 , H01L29/788 , H01L29/7883 , H01L29/792 , H01L2924/0002 , H01L2924/00
摘要： Provided are a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes a charge storage pattern formed on a substrate; a dielectric pattern formed on the charge storage pattern; a first conductive pattern including silicon doped with a first impurity of a first concentration, the first conductive pattern being disposed on the dielectric pattern; and a second conductive pattern including metal silicide doped with a second impurity of a second concentration, the second conductive pattern being disposed on the first conductive pattern. The first concentration may be higher than the second concentration.
摘要翻译：提供半导体器件和制造半导体器件的方法。半导体器件包括形成在衬底上的电荷存储图案; 形成在电荷存储图案上的电介质图案; 第一导电图案，包括掺杂有第一浓度的第一杂质的硅，所述第一导电图案设置在所述电介质图案上; 以及第二导电图案，其包括掺杂有第二浓度的第二杂质的金属硅化物，所述第二导电图案设置在所述第一导电图案上。第一浓度可能高于第二浓度。

3. 发明申请

US20060231846A1 Thin film transistor array panel for liquid crystal display 有权
标题翻译：用于液晶显示的薄膜晶体管阵列面板
公开(公告)号：US20060231846A1
公开(公告)日：2006-10-19
申请号：US11455367
申请日：2006-06-19
申请人： Mun-Pyo Hong , Wan-Shick Hong , Sang-Il Kim , Soo-Guy Rho , Jin-Kyu Kang , Snag-Gab Kim
发明人： Mun-Pyo Hong , Wan-Shick Hong , Sang-Il Kim , Soo-Guy Rho , Jin-Kyu Kang , Snag-Gab Kim
IPC分类号： H01L33/00
CPC分类号： G02F1/136227 , G02F1/136209 , G02F1/136286 , G02F2001/136222 , H01L27/12 , H01L27/1255 , H01L27/1288 , H01L29/42384 , H01L29/4908
摘要： A black matrix having an opening at pixels of a matrix array in a display area, a common wire including common pads and common signal lines, and gate pads in a peripheral area, and an alignment key in outer area to align interlayer thin films are formed on an insulating substrate. Red, blue and green color filters the edge of which overlap the black matrix are formed at the pixels on the insulating substrate, and an organic insulating layer covering the black matrix and the color filters and having a contact hole exposing the gate pad is formed thereon. A gate wire including a gate line connected to the gate pad through the contact hole and a gate electrode connected to the gate line is formed on the organic insulating layer, and a gate insulating layer covering the gate wire is formed on the organic insulating layer. A semiconductor pattern and ohmic contact layers are sequentially formed on the gate insulating layer of the gate electrode. A data wire including a source electrode and a drain electrode that are made of a same layer on the ohmic contact layers and separated from each other, and a data line connected to the source electrode and defining the pixels of a matrix array by crossing the gate line is formed on the gate insulating layer. A passivation layer covering the data wire and having contact holes exposing the gate pad and the data pad is formed, and a pixel wire including a pixel electrode, a redundant gate pad, a redundant data pad that are respectively connected to the drain electrode, the gate pad and the data pad through the contact holes.
摘要翻译：形成在显示区域中具有矩阵阵列的像素的开口的黑矩阵，包括公共焊盘和公共信号线的公共线，以及外围区域中的栅极焊盘以及外部区域中的对准键来对准层间薄膜在绝缘基板上。在绝缘基板上的像素处形成与黑矩阵重叠的边缘的红色，蓝色和绿色滤色片，并且在其上形成覆盖黑矩阵和滤色器并且具有暴露栅极接触孔的接触孔的有机绝缘层。在有机绝缘层上形成包括通过接触孔连接到栅极焊盘的栅极线和连接到栅极线的栅极的栅极线，并且在有机绝缘层上形成覆盖栅极线的栅极绝缘层。半导体图案和欧姆接触层依次形成在栅电极的栅极绝缘层上。一种数据线，包括在欧姆接触层上由相同层制成并彼此分离的源电极和漏电极，以及连接到源电极并通过跨越栅极定义矩阵阵列的像素的数据线线形成在栅极绝缘层上。形成覆盖数据线并具有露出栅极焊盘和数据焊盘的接触孔的钝化层，并且包括分别连接到漏电极的像素电极，冗余栅极焊盘，冗余数据焊盘的像素线，栅极焊盘和数据焊盘通过接触孔。

4. 发明授权

US09443863B2 Semiconductor devices 有权
公开(公告)号：US09443863B2
公开(公告)日：2016-09-13
申请号：US14819841
申请日：2015-08-06
申请人： Jeeyong Kim , Woonkyung Lee , Sunggil Kim , Jin-Kyu Kang , Jung-Hwan Lee , Bonyoung Koo , Kihyun Hwang , Byoungsun Ju , Jintae Noh
发明人： Jeeyong Kim , Woonkyung Lee , Sunggil Kim , Jin-Kyu Kang , Jung-Hwan Lee , Bonyoung Koo , Kihyun Hwang , Byoungsun Ju , Jintae Noh
IPC分类号： H01L29/49 , H01L27/115 , H01L23/535 , H01L29/78 , H01L21/28 , H01L23/48 , H01L29/788 , H01L29/792 , H01L21/768
CPC分类号： H01L27/11526 , H01L21/28 , H01L21/76841 , H01L23/48 , H01L23/535 , H01L27/11521 , H01L27/11568 , H01L27/11573 , H01L29/4958 , H01L29/78 , H01L29/788 , H01L29/7883 , H01L29/792 , H01L2924/0002 , H01L2924/00
摘要： Provided are a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes a charge storage pattern formed on a substrate; a dielectric pattern formed on the charge storage pattern; a first conductive pattern including silicon doped with a first impurity of a first concentration, the first conductive pattern being disposed on the dielectric pattern; and a second conductive pattern including metal silicide doped with a second impurity of a second concentration, the second conductive pattern being disposed on the first conductive pattern. The first concentration may be higher than the second concentration.

5. 发明授权

US09129950B2 Semiconductor devices 有权
标题翻译：半导体器件
公开(公告)号：US09129950B2
公开(公告)日：2015-09-08
申请号：US14568737
申请日：2014-12-12
申请人： Jeeyong Kim , Woonkyung Lee , Sunggil Kim , Jin-Kyu Kang , Jung-Hwan Lee , Bonyoung Koo , Kihyun Hwang , Byoungsun Ju , Jintae Noh
发明人： Jeeyong Kim , Woonkyung Lee , Sunggil Kim , Jin-Kyu Kang , Jung-Hwan Lee , Bonyoung Koo , Kihyun Hwang , Byoungsun Ju , Jintae Noh
IPC分类号： H01L29/49 , H01L21/28 , H01L23/48 , H01L29/788 , H01L29/792 , H01L21/768 , H01L27/115
CPC分类号： H01L27/11526 , H01L21/28 , H01L21/76841 , H01L23/48 , H01L23/535 , H01L27/11521 , H01L27/11568 , H01L27/11573 , H01L29/4958 , H01L29/78 , H01L29/788 , H01L29/7883 , H01L29/792 , H01L2924/0002 , H01L2924/00
摘要： Provided are a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes a charge storage pattern formed on a substrate; a dielectric pattern formed on the charge storage pattern; a first conductive pattern including silicon doped with a first impurity of a first concentration, the first conductive pattern being disposed on the dielectric pattern; and a second conductive pattern including metal silicide doped with a second impurity of a second concentration, the second conductive pattern being disposed on the first conductive pattern. The first concentration may be higher than the second concentration.
摘要翻译：提供半导体器件和制造半导体器件的方法。半导体器件包括形成在衬底上的电荷存储图案; 形成在电荷存储图案上的电介质图案; 第一导电图案，包括掺杂有第一浓度的第一杂质的硅，所述第一导电图案设置在所述电介质图案上; 以及第二导电图案，其包括掺杂有第二浓度的第二杂质的金属硅化物，所述第二导电图案设置在所述第一导电图案上。第一浓度可能高于第二浓度。

6. 发明申请

US20120074484A1 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES 审中-公开
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20120074484A1
公开(公告)日：2012-03-29
申请号：US13223698
申请日：2011-09-01
申请人： Jin-Kyu KANG , Woon-Kyung LEE , Jee-Yong KIM , Jung-Hwan LEE
发明人： Jin-Kyu KANG , Woon-Kyung LEE , Jee-Yong KIM , Jung-Hwan LEE
IPC分类号： H01L21/336 , H01L29/788
CPC分类号： H01L21/764 , H01L21/7682 , H01L27/11524 , H01L27/11526
摘要： A method of manufacturing a semiconductor device including forming a plurality of gate structures spaced apart from each other on a substrate; forming a first insulation layer covering the gate structures, the first insulation layer including a void between the gate structures; removing an upper portion of the first insulation layer to form a first insulation layer pattern on sidewalls of lower portions of the gate structures and on the substrate between the gate structures, the first insulation layer pattern including a first recess thereon; forming a conductive layer on upper portions of the gate structures exposed by the first insulation layer pattern; reacting the conductive layer with the gate structures; and forming a second insulation layer on the upper portions of the gate structures, the second insulation layer including a second recess therebeneath in fluid communication with the first recess.
摘要翻译：一种制造半导体器件的方法，包括在衬底上形成彼此间隔开的多个栅极结构; 形成覆盖所述栅极结构的第一绝缘层，所述第一绝缘层包括所述栅极结构之间的空隙; 去除所述第一绝缘层的上部以在所述栅极结构的下部的侧壁和所述栅极结构之间的所述衬底上形成第一绝缘层图案，所述第一绝缘层图案包括其上的第一凹部; 在由第一绝缘层图案暴露的栅极结构的上部形成导电层; 使导电层与栅极结构反应; 以及在所述栅极结构的上部形成第二绝缘层，所述第二绝缘层包括与所述第一凹部流体连通的第二凹部。

7. 发明授权

US07675062B2 Thin film transistor array panel for liquid crystal display 有权
标题翻译：用于液晶显示的薄膜晶体管阵列面板
公开(公告)号：US07675062B2
公开(公告)日：2010-03-09
申请号：US11455367
申请日：2006-06-19
申请人： Mun-Pyo Hong , Wan-Shick Hong , Sang-Il Kim , Soo-Guy Rho , Jin-Kyu Kang , Snag-Gab Kim
发明人： Mun-Pyo Hong , Wan-Shick Hong , Sang-Il Kim , Soo-Guy Rho , Jin-Kyu Kang , Snag-Gab Kim
IPC分类号： H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： G02F1/136227 , G02F1/136209 , G02F1/136286 , G02F2001/136222 , H01L27/12 , H01L27/1255 , H01L27/1288 , H01L29/42384 , H01L29/4908
摘要： A black matrix having an opening at pixels of a matrix array in a display area, a common wire including common pads and common signal lines, and gate pads in a peripheral area, and an alignment key in outer area to align interlayer thin films are formed on an insulating substrate. Red, blue and green color filters the edge of which overlap the black matrix are formed at the pixels on the insulating substrate, and an organic insulating layer covering the black matrix and the color filters and having a contact hole exposing the gate pad is formed thereon. A gate wire including a gate line connected to the gate pad through the contact hole and a gate electrode connected to the gate line is formed on the organic insulating layer, and a gate insulating layer covering the gate wire is formed on the organic insulating layer. A semiconductor pattern and ohmic contact layers are sequentially formed on the gate insulating layer of the gate electrode. A data wire including a source electrode and a drain electrode that are made of a same layer on the ohmic contact layers and separated from each other, and a data line connected to the source electrode and defining the pixels of a matrix array by crossing the gate line is formed on the gate insulating layer. A passivation layer covering the data wire and having contact holes exposing the gate pad and the data pad is formed, and a pixel wire including a pixel electrode, a redundant gate pad, a redundant data pad that are respectively connected to the drain electrode, the gate pad and the data pad through the contact holes.
摘要翻译：形成在显示区域中具有矩阵阵列的像素的开口的黑矩阵，包括公共焊盘和公共信号线的公共线，以及外围区域中的栅极焊盘以及外部区域中的对准键来对准层间薄膜在绝缘基板上。在绝缘基板上的像素处形成与黑矩阵重叠的边缘的红色，蓝色和绿色滤色片，并且在其上形成覆盖黑矩阵和滤色器并且具有暴露栅极接触孔的接触孔的有机绝缘层。在有机绝缘层上形成包括通过接触孔连接到栅极焊盘的栅极线和连接到栅极线的栅极的栅极线，并且在有机绝缘层上形成覆盖栅极线的栅极绝缘层。半导体图案和欧姆接触层依次形成在栅电极的栅极绝缘层上。一种数据线，包括在欧姆接触层上由相同层制成并彼此分离的源电极和漏电极，以及连接到源电极并通过跨越栅极定义矩阵阵列的像素的数据线线形成在栅极绝缘层上。形成覆盖数据线并具有露出栅极焊盘和数据焊盘的接触孔的钝化层，并且包括分别连接到漏电极的像素电极，冗余栅极焊盘，冗余数据焊盘的像素线，栅极焊盘和数据焊盘通过接触孔。

8. 发明申请

US20090156275A1 SEMI-AUTOMATICALLY SLIDING MOBILE TERMINAL 有权
标题翻译：半自动滑动移动终端
公开(公告)号：US20090156275A1
公开(公告)日：2009-06-18
申请号：US12332640
申请日：2008-12-11
申请人： Sang Chun Park , Jin Kyu Kang
发明人： Sang Chun Park , Jin Kyu Kang
IPC分类号： H04M1/00
CPC分类号： H04M1/0237
摘要： A semi-automatically sliding mobile terminal is disclosed. The mobile terminal includes a first main body, a second main body, a hinge unit, and a guide line. The second main body slides on the upper side of the first main body. The hinge unit includes a coupler coupled to the first main body and a spring unit compressing and expanding in a lateral direction. The guide unit includes a curved line having an ascending curved line, a crest, and a descending curved line that are formed in a longitudinal direction. When the second main body moves, the spring unit compresses or expands along the guide line. The spring unit compresses before passing over the crest and expands after passing over the crest. After the crest, the second main body moves semi-automatically due to elastic force of the spring unit.
摘要翻译：公开了一种半自动滑动式移动终端。移动终端包括第一主体，第二主体，铰链单元和引导线。第二主体在第一主体的上侧滑动。铰链单元包括联接到第一主体的联接器和沿横向方向压缩和膨胀的弹簧单元。引导单元包括沿纵向形成的具有上升曲线，波峰和下降曲线的曲线。当第二主体移动时，弹簧单元沿着引导线压缩或扩展。弹簧单元在通过顶部之前压缩并在通过顶部之后膨胀。在波峰之后，第二主体由于弹簧单元的弹力而半自动移动。

9. 发明授权

US07253866B2 Method of fabricating liquid crystal display device 有权
标题翻译：制造液晶显示装置的方法
公开(公告)号：US07253866B2
公开(公告)日：2007-08-07
申请号：US10271557
申请日：2002-10-17
申请人： Hong Man Moon , Su Woong Lee , Kyoung Nam Lim , Jin Kyu Kang
发明人： Hong Man Moon , Su Woong Lee , Kyoung Nam Lim , Jin Kyu Kang
IPC分类号： G02F1/1339 , G02F1/1333
CPC分类号： G02F1/1339 , G02F1/133512
摘要： A method of fabricating a liquid crystal display device includes forming a thin film transistor array on an active area of a first substrate, forming a color filter layer and a black matrix layer on a second substrate, forming a sealant along a peripheral portion of the second substrate, bonding the first and second substrates, and hardening the sealant by exposure to light, wherein the black matrix layer and the sealant are offset and do not overlap each other.
摘要翻译：一种制造液晶显示装置的方法包括在第一基板的有源区上形成薄膜晶体管阵列，在第二基板上形成滤色器层和黑矩阵层，沿着第二基板的周边部分形成密封剂基板，结合第一和第二基板，并通过曝光使光固化密封剂，其中黑矩阵层和密封剂偏移并且彼此不重叠。

10. 发明授权

US07190421B2 Thin film transistor array panel for a liquid crystal display and methods for manufacturing the same 有权
标题翻译：一种用于液晶显示器的薄膜晶体管阵列面板及其制造方法
公开(公告)号：US07190421B2
公开(公告)日：2007-03-13
申请号：US10660749
申请日：2003-09-12
申请人： Mun-Pyo Hong , Wan-Shick Hong , Sang-Il Kim , Soo-Guy Rho , Jin-Kyu Kang , Snag-Gab Kim
发明人： Mun-Pyo Hong , Wan-Shick Hong , Sang-Il Kim , Soo-Guy Rho , Jin-Kyu Kang , Snag-Gab Kim
IPC分类号： G02F1/136 , G02F1/1335 , G02F1/1333
CPC分类号： G02F1/136227 , G02F1/136209 , G02F1/136286 , G02F2001/136222 , H01L27/12 , H01L27/1255 , H01L27/1288 , H01L29/42384 , H01L29/4908
摘要： A black matrix having an opening at pixels of a matrix array in a display area, a common wire including common pads and common signal lines, and gate pads in a peripheral area, and an alignment key in outer area to align interlayer thin films are formed on an insulating substrate. Red, blue and green color filters the edge of which overlap the black matrix are formed at the pixels on the insulating substrate, and an organic insulating layer covering the black matrix and the color filters and having a contact hole exposing the gate pad is formed thereon. A gate wire including a gate line connected to the gate pad through the contact hole and a gate electrode connected to the gate line is formed on the organic insulating layer, and a gate insulating layer covering the gate wire is formed on the organic insulating layer. A semiconductor pattern and ohmic contact layers are sequentially formed on the gate insulating layer of the gate electrode. A data wire including a source electrode and a drain electrode that are made of a same layer on the ohmic contact layers and separated from each other, and a data line connected to the source electrode and defining the pixels of a matrix array by crossing the gate line is formed on the gate insulating layer. A passivation layer covering the data wire and having contact holes exposing the gate pad and the data pad is formed, and a pixel wire including a pixel electrode, a redundant gate pad, a redundant data pad that are respectively connected to the drain electrode, the gate pad and the data pad through the contact holes.
摘要翻译：形成在显示区域中具有矩阵阵列的像素的开口的黑矩阵，包括公共焊盘和公共信号线的公共线，以及外围区域中的栅极焊盘以及外部区域中的对准键来对准层间薄膜在绝缘基板上。在绝缘基板上的像素处形成与黑矩阵重叠的边缘的红色，蓝色和绿色滤色片，并且在其上形成覆盖黑矩阵和滤色器并且具有暴露栅极接触孔的接触孔的有机绝缘层。在有机绝缘层上形成包括通过接触孔连接到栅极焊盘的栅极线和连接到栅极线的栅极的栅极线，并且在有机绝缘层上形成覆盖栅极线的栅极绝缘层。半导体图案和欧姆接触层依次形成在栅电极的栅极绝缘层上。一种数据线，包括在欧姆接触层上由相同层制成并彼此分离的源电极和漏电极，以及连接到源电极并通过跨越栅极定义矩阵阵列的像素的数据线线形成在栅极绝缘层上。形成覆盖数据线并具有露出栅极焊盘和数据焊盘的接触孔的钝化层，并且包括分别连接到漏电极的像素电极，冗余栅极焊盘，冗余数据焊盘的像素线，栅极焊盘和数据焊盘通过接触孔。

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