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1. 发明授权

US07732845B2 Pixel sensor with reduced image lag 有权
标题翻译：具有降低图像滞后的像素传感器
公开(公告)号：US07732845B2
公开(公告)日：2010-06-08
申请号：US12099339
申请日：2008-04-08
申请人： James W Adkisson , Jeffrey P. Gambino , Rajendran Krishnasamy , Solomon Mulugeta
发明人： James W Adkisson , Jeffrey P. Gambino , Rajendran Krishnasamy , Solomon Mulugeta
IPC分类号： H01L31/062
CPC分类号： H01L27/14603
摘要： A tensile-stress-generating structure is formed above a gate electrode in a CMOS image sensor to apply a normal tensile stress between a charge collection well of a photodiode, which is also a source region of a transfer transistor, and a floating drain in the direction connecting the source region and the floating drain. The tensile stress lowers the potential barrier between the source region and the body of the transfer transistor to effect a faster and more through transfer of the electrical charges in the source region to the floating drain. Image lag is thus reduced in the CMOS image sensor. Further, charge capacity of the source region is also enhanced due to the normal tensile stress applied to the source region.
摘要翻译：在CMOS图像传感器的栅电极上方形成拉伸应力产生结构，以在也是转移晶体管的源极区域的光电二极管的电荷收集阱和浮动漏极之间施加正常的拉伸应力连接源极区域和浮动漏极的方向。拉伸应力降低了源区域和转移晶体管的主体之间的势垒，以实现更快和更多地将源区域中的电荷转移到浮动漏极。因此CMOS图像传感器中的图像滞后减少。此外，由于施加到源极区域的正常拉伸应力，源极区域的充电容量也增强。

2. 发明授权

US08298853B2 CMOS pixel sensor cells with poly spacer transfer gates and methods of manufacture 有权
标题翻译：具有聚间隔物传输门的CMOS像素传感器单元和制造方法
公开(公告)号：US08298853B2
公开(公告)日：2012-10-30
申请号：US12853795
申请日：2010-08-10
申请人： James W. Adkisson , John J. Ellis-Monaghan , Rajendran Krishnasamy , Solomon Mulugeta , Charles F. Musante , Richard J. Rassel
发明人： James W. Adkisson , John J. Ellis-Monaghan , Rajendran Krishnasamy , Solomon Mulugeta , Charles F. Musante , Richard J. Rassel
IPC分类号： H01L21/00
CPC分类号： H01L31/1136 , H01L27/14614 , H01L27/14643 , H01L27/14689
摘要： CMOS pixel sensor cells with spacer transfer gates and methods of manufacture are provided herein. The method includes forming a middle gate structure on a gate dielectric. The method further includes forming insulation sidewalls on the middle gate structure. The method further includes forming spacer transfer gates on the gate dielectric on opposing sides of the middle gate, adjacent to the insulation sidewalls which isolate the middle gate structure from the spacer transfer gates. The method further includes forming a photo-diode region in electrical contact with one of the spacer transfer gates and a floating diffusion in electrical contact with another of the spacer transfer gates.
摘要翻译：本文提供具有间隔物传输门的CMOS像素传感器单元和制造方法。该方法包括在栅极电介质上形成中间栅极结构。该方法还包括在中间栅极结构上形成绝缘侧壁。该方法还包括在中间栅极的相对侧上的栅极电介质上形成间隔物传输门，邻近绝缘侧壁，隔离侧壁将中间栅极结构与间隔物传输门隔离。该方法还包括形成光电二极管区域与间隔物传递门中的一个电气接触，以及浮动扩散部分与另一个间隔物传送门电接触。

3. 发明授权

US08009215B2 Pixel sensor cell with frame storage capability 有权
标题翻译：具有帧存储能力的像素传感器单元
公开(公告)号：US08009215B2
公开(公告)日：2011-08-30
申请号：US12174264
申请日：2008-07-16
申请人： James W. Adkisson , John J. Ellis-Monaghan , Rajendran Krishnasamy , Solomon Mulugeta , Charles F. Musante , Richard J. Rassel
发明人： James W. Adkisson , John J. Ellis-Monaghan , Rajendran Krishnasamy , Solomon Mulugeta , Charles F. Musante , Richard J. Rassel
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H04N5/37452
摘要： A set of frame transfer transistors are provided between a hold gate transistor and a transfer gate transistor of a CMOS image sensor to enable storage of charge generate in the photosensitive diode after exposure. The readout of the charges from the set of frame transfer transistors may be performed after a plurality of exposures of the CMOS image sensor, between each of which charges are shifted toward the transfer gate transistor within the set of frame transfer transistors. Useful operation modes are enabled including a burst mode operation for rapid capture of successive images and high dynamic range operations in which multiple images are taken with different exposure times or a large capacitance is provided by ganging the diffusions of the set of frame transfer transistors.
摘要翻译：在CMOS图像传感器的保持栅晶体管和传输栅极晶体管之间提供一组帧传输晶体管，以便能够在曝光之后存储在感光二极管中产生的电荷。可以在CMOS图像传感器的多次曝光之后，在每个帧转移晶体管中的每个电荷向着传输门晶体管移动之前执行来自该组帧转移晶体管的电荷的读出。启用有用的操作模式，包括用于快速捕获连续图像的突发模式操作和其中以不同曝光时间拍摄多个图像的高动态范围操作，或者通过组合帧传输晶体管的扩散来提供大的电容。

4. 发明授权

US07923750B2 Pixel sensor cell, methods and design structure including optically transparent gate 有权
标题翻译：像素传感器单元，方法和设计结构包括光学透明门
公开(公告)号：US07923750B2
公开(公告)日：2011-04-12
申请号：US12139524
申请日：2008-06-16
申请人： James William Adkisson , Rajendran Krishnasamy , John Joseph Ellis-Monaghan , Solomon Mulugeta , Charles Francis Musante , Richard J. Rassel
发明人： James William Adkisson , Rajendran Krishnasamy , John Joseph Ellis-Monaghan , Solomon Mulugeta , Charles Francis Musante , Richard J. Rassel
IPC分类号： H01L31/062 , H01L31/113 , H01L31/00 , H01L29/74 , H01L31/111
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14612
摘要： A pixel sensor cell, a method for fabricating or operating the pixel sensor cell and a design structure for fabricating the pixel sensor cell each include a semiconductor substrate that includes a photoactive region separated from a floating diffusion region by a channel region. At least one gate dielectric is located upon the semiconductor substrate at least in-part interposed between the photoactive region and the floating diffusion region, and at least one optically transparent gate is located upon the gate dielectric and at least in-part over the channel region. Preferably, the at least one gate dielectric is also located over the photoactive region and the at least one optically transparent gate is also located at least in-part over the photoactive region, to provide enhanced charge transfer capabilities within the pixel sensor cell, which is typically a CMOS pixel sensor cell.
摘要翻译：像素传感器单元，用于制造或操作像素传感器单元的方法和用于制造像素传感器单元的设计结构各自包括半导体衬底，其包括通过沟道区域与浮动扩散区域分离的光活性区域。至少一个栅极介质至少部分地位于半导体衬底之间，介于光活性区域和浮动扩散区域之间，并且至少一个光学透明栅极位于栅极电介质上并且至少部分地位于沟道区域上。优选地，至少一个栅极电介质也位于光活性区域之上，并且至少一个光学透明栅极也至少部分地位于光活性区域上，以在像素传感器单元内提供增强的电荷转移能力，其是通常是CMOS像素传感器单元。

5. 发明申请

US20120037967A1 CMOS PIXEL SENSOR CELLS WITH POLY SPACER TRANSFER GATES AND METHODS OF MANUFACTURE 有权
标题翻译：具有多孔隔离栅的CMOS像素传感器电池及其制造方法
公开(公告)号：US20120037967A1
公开(公告)日：2012-02-16
申请号：US12853795
申请日：2010-08-10
申请人： James W. ADKISSON , John J. ELLIS-MONAGHAN , Rajendran KRISHNASAMY , Solomon MULUGETA , Charles F. MUSANTE , Richard J. RASSEL
发明人： James W. ADKISSON , John J. ELLIS-MONAGHAN , Rajendran KRISHNASAMY , Solomon MULUGETA , Charles F. MUSANTE , Richard J. RASSEL
IPC分类号： H01L31/14 , G06F17/50 , H01L31/18
CPC分类号： H01L31/1136 , H01L27/14614 , H01L27/14643 , H01L27/14689
摘要： CMOS pixel sensor cells with spacer transfer gates and methods of manufacture are provided herein. The method includes forming a middle gate structure on a gate dielectric. The method further includes forming insulation sidewalls on the middle gate structure. The method further includes forming spacer transfer gates on the gate dielectric on opposing sides of the middle gate, adjacent to the insulation sidewalls which isolate the middle gate structure from the spacer transfer gates. The method further includes forming a photo-diode region in electrical contact with one of the spacer transfer gates and a floating diffusion in electrical contact with another of the spacer transfer gates.
摘要翻译：本文提供具有间隔物传输门的CMOS像素传感器单元和制造方法。该方法包括在栅极电介质上形成中间栅极结构。该方法还包括在中间栅极结构上形成绝缘侧壁。该方法还包括在中间栅极的相对侧上的栅极电介质上形成间隔物传输门，邻近绝缘侧壁，隔离侧壁将中间栅极结构与间隔物传输门隔离。该方法还包括形成光电二极管区域与间隔物传递门中的一个电气接触，以及浮动扩散部分与另一个间隔物传送门电接触。

6. 发明申请

US20100013973A1 PIXEL SENSOR CELL WITH FRAME STORAGE CAPABILITY 有权
标题翻译：具有帧存储能力的像素传感器单元
公开(公告)号：US20100013973A1
公开(公告)日：2010-01-21
申请号：US12174289
申请日：2008-07-16
申请人： James W. Adkisson , John J. Ellis-Monaghan , Rajendran Krishnasamy , Solomon Mulugeta , Charles F. Musante , Richard J. Rassel
发明人： James W. Adkisson , John J. Ellis-Monaghan , Rajendran Krishnasamy , Solomon Mulugeta , Charles F. Musante , Richard J. Rassel
IPC分类号： H04N5/335
CPC分类号： H04N5/37452 , H04N5/2355
摘要： A set of frame transfer transistors are provided between a hold gate transistor and a transfer gate transistor of a CMOS image sensor to enable storage of charge generate in the photosensitive diode after exposure. The readout of the charges from the set of frame transfer transistors may be performed after a plurality of exposures of the CMOS image sensor, between each of which charges are shifted toward the transfer gate transistor within the set of frame transfer transistors. Useful operation modes are enabled including a burst mode operation for rapid capture of successive images and high dynamic range operations in which multiple images are taken with different exposure times or a large capacitance is provided by ganging the diffusions of the set of frame transfer transistors.
摘要翻译：在CMOS图像传感器的保持栅晶体管和传输栅极晶体管之间提供一组帧传输晶体管，以便能够在曝光之后存储在感光二极管中产生的电荷。可以在CMOS图像传感器的多次曝光之后，在每个帧转移晶体管中的每个电荷向着传输门晶体管移动之前执行来自该组帧转移晶体管的电荷的读出。启用有用的操作模式，包括用于快速捕获连续图像的突发模式操作和其中以不同曝光时间拍摄多个图像的高动态范围操作，或者通过组合帧传输晶体管的扩散来提供大的电容。

7. 发明申请

US20100013972A1 PIXEL SENSOR CELL WITH FRAME STORAGE CAPABILITY 有权
公开(公告)号：US20100013972A1
公开(公告)日：2010-01-21
申请号：US12174264
申请日：2008-07-16
申请人： James W. Adkisson , John J. Ellis-Monaghan , Rajendran Krishnasamy , Solomon Mulugeta , Charles F. Musante , Richard J. Rassel
发明人： James W. Adkisson , John J. Ellis-Monaghan , Rajendran Krishnasamy , Solomon Mulugeta , Charles F. Musante , Richard J. Rassel
IPC分类号： H04N5/335
CPC分类号： H04N5/37452
摘要： A set of frame transfer transistors are provided between a hold gate transistor and a transfer gate transistor of a CMOS image sensor to enable storage of charge generate in the photosensitive diode after exposure. The readout of the charges from the set of frame transfer transistors may be performed after a plurality of exposures of the CMOS image sensor, between each of which charges are shifted toward the transfer gate transistor within the set of frame transfer transistors. Useful operation modes are enabled including a burst mode operation for rapid capture of successive images and high dynamic range operations in which multiple images are taken with different exposure times or a large capacitance is provided by ganging the diffusions of the set of frame transfer transistors.

8. 发明申请

US20090311822A1 PIXEL SENSOR CELL, METHODS AND DESIGN STRUCTURE INCLUDING OPTICALLY TRANSPARENT GATE 审中-公开
标题翻译：像素传感器单元，包括光学透明门的方法和设计结构
公开(公告)号：US20090311822A1
公开(公告)日：2009-12-17
申请号：US12139523
申请日：2008-06-16
申请人： James William Adkisson , Rajendran Krishnasamy , John Joseph Ellis-Monaghan , Solomon Mulugeta , Charles Francis Musante , Richard J. Rassel
发明人： James William Adkisson , Rajendran Krishnasamy , John Joseph Ellis-Monaghan , Solomon Mulugeta , Charles Francis Musante , Richard J. Rassel
IPC分类号： H01L21/00
CPC分类号： H01L27/14614 , H01L27/14643 , H01L27/14689
摘要： A pixel sensor cell, a method for fabricating or operating the pixel sensor cell and a design structure for fabricating the pixel sensor cell each include a semiconductor substrate that includes a photoactive region separated from a floating diffusion region by a channel region. At least one gate dielectric is located upon the semiconductor substrate at least in-part interposed between the photoactive region and the floating diffusion region, and at least one optically transparent gate is located upon the gate dielectric and at least in-part over the channel region. Preferably, the at least one gate dielectric is also located over the photoactive region and the at least one optically transparent gate is also located at least in-part over the photoactive region, to provide enhanced charge transfer capabilities within the pixel sensor cell, which is typically a CMOS pixel sensor cell.
摘要翻译：像素传感器单元，用于制造或操作像素传感器单元的方法和用于制造像素传感器单元的设计结构各自包括半导体衬底，其包括通过沟道区域与浮动扩散区域分离的光活性区域。至少一个栅极介质至少部分地位于半导体衬底之间，介于光活性区域和浮动扩散区域之间，并且至少一个光学透明栅极位于栅极电介质上并且至少部分地位于沟道区域上。优选地，至少一个栅极电介质也位于光活性区域之上，并且至少一个光学透明栅极也至少部分地位于光活性区域上，以在像素传感器单元内提供增强的电荷转移能力，其是通常是CMOS像素传感器单元。

9. 发明授权

US08009216B2 Pixel sensor cell with frame storage capability 有权
公开(公告)号：US08009216B2
公开(公告)日：2011-08-30
申请号：US12174289
申请日：2008-07-16
申请人： James W. Adkisson , John J. Ellis-Monaghan , Rajendran Krishnasamy , Solomon Mulugeta , Charles F. Musante , Richard J. Rassel
发明人： James W. Adkisson , John J. Ellis-Monaghan , Rajendran Krishnasamy , Solomon Mulugeta , Charles F. Musante , Richard J. Rassel
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H04N5/37452 , H04N5/2355
摘要： A set of frame transfer transistors are provided between a hold gate transistor and a transfer gate transistor of a CMOS image sensor to enable storage of charge generate in the photosensitive diode after exposure. The readout of the charges from the set of frame transfer transistors may be performed after a plurality of exposures of the CMOS image sensor, between each of which charges are shifted toward the transfer gate transistor within the set of frame transfer transistors. Useful operation modes are enabled including a burst mode operation for rapid capture of successive images and high dynamic range operations in which multiple images are taken with different exposure times or a large capacitance is provided by ganging the diffusions of the set of frame transfer transistors.

10. 发明申请

US20090309143A1 PIXEL SENSOR CELL, METHODS AND DESIGN STRUCTURE INCLUDING OPTICALLY TRANSPARENT GATE 有权
公开(公告)号：US20090309143A1
公开(公告)日：2009-12-17
申请号：US12139524
申请日：2008-06-16
申请人： James William Adkisson , Rajendran Krishnasamy , John Joseph Ellis-Monaghan , Solomon Mulugeta , Charles Francis Musante , Richard J. Rassel
发明人： James William Adkisson , Rajendran Krishnasamy , John Joseph Ellis-Monaghan , Solomon Mulugeta , Charles Francis Musante , Richard J. Rassel
IPC分类号： H01L27/146
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14612
摘要： A pixel sensor cell, a method for fabricating or operating the pixel sensor cell and a design structure for fabricating the pixel sensor cell each include a semiconductor substrate that includes a photoactive region separated from a floating diffusion region by a channel region. At least one gate dielectric is located upon the semiconductor substrate at least in-part interposed between the photoactive region and the floating diffusion region, and at least one optically transparent gate is located upon the gate dielectric and at least in-part over the channel region. Preferably, the at least one gate dielectric is also located over the photoactive region and the at least one optically transparent gate is also located at least in-part over the photoactive region, to provide enhanced charge transfer capabilities within the pixel sensor cell, which is typically a CMOS pixel sensor cell.

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