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1. 发明授权

US09461189B2 Photovoltaic devices with electroplated metal grids 有权
公开(公告)号：US09461189B2
公开(公告)日：2016-10-04
申请号：US14045163
申请日：2013-10-03
申请人： Silevo, Inc.
发明人： Jianming Fu , Jiunn Benjamin Heng , Christopher J. Beitel , Zheng Xu
IPC分类号： H01L31/0224 , H01L31/18 , H01L31/068 , H01L31/0747
CPC分类号： H01L31/022433 , H01L31/0201 , H01L31/022425 , H01L31/068 , H01L31/0684 , H01L31/0747 , H01L31/1804 , Y02E10/547
摘要： One embodiment of the present invention provides a solar cell. The solar cell includes a photovoltaic structure and a front-side metal grid situated above the photovoltaic structure. The front-side metal grid also includes one or more electroplated metal layers. The front-side metal grid includes one or more finger lines, and each end of a respective finger line is coupled to a corresponding end of an adjacent finger line via an additional metal line, thus ensuring that the respective finger line has no open end.

2. 发明申请

US20160225931A1 BIFACIAL PHOTOVOLTAIC MODULE USING HETEROJUNCTION SOLAR CELLS 有权
标题翻译：使用异源太阳能电池的双光伏组件
公开(公告)号：US20160225931A1
公开(公告)日：2016-08-04
申请号：US14611988
申请日：2015-02-02
申请人： Silevo, Inc.
发明人： Jiunn Benjamin Heng , Christoph Erben , Bobby Yang
IPC分类号： H01L31/0725 , H01L31/0216 , H01L31/02 , H01L31/18 , H01L31/0224 , H01L31/048
CPC分类号： H01L31/0725 , H01L31/0201 , H01L31/02013 , H01L31/02167 , H01L31/022433 , H01L31/022466 , H01L31/0488 , H01L31/0504 , H01L31/0684 , H01L31/0747 , H01L31/18 , H01L31/1884 , H02S40/34 , Y02E10/547
摘要： One embodiment of the present invention provides a bifacial solar panel. The bifacial solar panel includes a first transparent cover on a first side of the solar panel, a second transparent cover on a second side of the solar panel, a plurality of solar cells sandwiched between the first cover and the second cover, and one or more lead wires for outputting power generated by the solar panel. The lead wires are positioned on an edge of the solar panel without shading the first and second sides of the solar panel. A respective solar cell comprises a photovoltaic structure, a first metal grid on the first side of the photovoltaic structure, which allows the solar cell to absorb light from the first side, and a second metal grid on the second side of the photovoltaic structure, which allows the solar cell to absorb light from the second side.
摘要翻译：本发明的一个实施例提供一种双面太阳能电池板。双面太阳能电池板包括在太阳能电池板的第一侧上的第一透明盖，在太阳能电池板的第二侧上的第二透明盖，夹在第一盖和第二盖之间的多个太阳能电池，以及一个或多个用于输出由太阳能电池板产生的电力的导线。导线位于太阳能电池板的边缘上，而不会遮挡太阳能电池板的第一和第二面。相应的太阳能电池包括光伏结构，在光伏结构的第一侧上的第一金属格栅，其允许太阳能电池吸收来自第一侧的光，以及在光伏结构的第二侧上的第二金属栅格，允许太阳能电池吸收来自第二侧的光。

3. 发明申请

US20150040975A1 HETEROJUNCTION SOLAR CELL BASED ON EPITAXIAL CRYSTALLINE-SILICON THIN FILM ON METALLURGICAL SILICON SUBSTRATE DESIGN 审中-公开
标题翻译：基于金属硅基底板上的外延晶体硅薄膜的异相太阳能电池
公开(公告)号：US20150040975A1
公开(公告)日：2015-02-12
申请号：US14525140
申请日：2014-10-27
申请人： Silevo, Inc.
发明人： Chentao Yu , Jiunn Benjamin Heng , Zheng Xu , Jianming Fu , Jianjun Liang
IPC分类号： H01L31/0747 , H01L31/18 , H01L31/20 , H01L31/0236
CPC分类号： H01L31/0747 , H01L31/02363 , H01L31/18 , H01L31/1804 , H01L31/202 , Y02E10/547 , Y02P70/521
摘要： One embodiment of the present invention provides a heterojunction solar cell. The solar cell includes a metallurgical-grade Si (MG-Si) substrate, a layer of heavily doped crystalline-Si situated above the MG-Si substrate, a layer of lightly doped crystalline-Si situated above the heavily doped crystalline-Si layer, a backside ohmic-contact layer situated on the backside of the MG-Si substrate, a passivation layer situated above the heavily doped crystalline-Si layer, a layer of heavily doped amorphous Si (a-Si) situated above the passivation layer, a layer of transparent-conducting-oxide (TCO) situated above the heavily doped a-Si layer, and a front ohmic-contact electrode situated above the TCO layer.
摘要翻译：本发明的一个实施例提供了异质结太阳能电池。太阳能电池包括冶金级Si（MG-Si）衬底，位于MG-Si衬底上方的重掺杂晶体层Si，位于重掺杂晶体Si层上方的轻掺杂晶体层Si，位于MG-Si衬底背面的背面欧姆接触层，位于重掺杂晶体Si层上方的钝化层，位于钝化层上方的重掺杂非晶Si层（a-Si）层，位于重掺杂的a-Si层上方的透明导电氧化物（TCO）和位于TCO层上方的前欧姆接触电极。

4. 发明授权

US08872020B2 Heterojunction solar cell based on epitaxial crystalline-silicon thin film on metallurgical silicon substrate design 有权
标题翻译：异质结太阳能电池基于外延晶体硅薄膜在冶金硅基板上的设计
公开(公告)号：US08872020B2
公开(公告)日：2014-10-28
申请号：US13626740
申请日：2012-09-25
申请人： Silevo, Inc.
发明人： Chentao Yu , Jiunn Benjamin Heng , Zheng Xu , Jianming Fu , Jianjun Liang
IPC分类号： H01L31/00 , H01L31/18 , H01L31/20 , H01L31/0747
CPC分类号： H01L31/0747 , H01L31/02363 , H01L31/18 , H01L31/1804 , H01L31/202 , Y02E10/547 , Y02P70/521
摘要： One embodiment of the present invention provides a heterojunction solar cell. The solar cell includes a metallurgical-grade Si (MG-Si) substrate, a layer of heavily doped crystalline-Si situated above the MG-Si substrate, a layer of lightly doped crystalline-Si situated above the heavily doped crystalline-Si layer, a backside ohmic-contact layer situated on the backside of the MG-Si substrate, a passivation layer situated above the heavily doped crystalline-Si layer, a layer of heavily doped amorphous Si (a-Si) situated above the passivation layer, a layer of transparent-conducting-oxide (TCO) situated above the heavily doped a-Si layer, and a front ohmic-contact electrode situated above the TCO layer.
摘要翻译：本发明的一个实施例提供了异质结太阳能电池。太阳能电池包括冶金级Si（MG-Si）衬底，位于MG-Si衬底上方的重掺杂晶体层Si，位于重掺杂晶体Si层上方的轻掺杂晶体层Si，位于MG-Si衬底背面的背面欧姆接触层，位于重掺杂晶体Si层上方的钝化层，位于钝化层上方的重掺杂非晶Si层（a-Si）层，位于重掺杂的a-Si层上方的透明导电氧化物（TCO）和位于TCO层上方的前欧姆接触电极。

5. 发明授权

US09865754B2 Hole collectors for silicon photovoltaic cells 有权
公开(公告)号：US09865754B2
公开(公告)日：2018-01-09
申请号：US14051336
申请日：2013-10-10
申请人： Silevo, Inc.
发明人： Zhigang Xie , Jiunn Benjamin Heng , Wei Wang , Jianming Fu , Zheng Xu
IPC分类号： H01L31/00 , H01L31/0352 , H01L31/18 , H01L31/062
CPC分类号： H01L31/035209 , H01L31/062 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： One embodiment of the present invention provides a solar cell. The solar cell includes a base layer comprising crystalline Si (c-Si), a hole collector situated on a first side of the base layer, and an electron collector situated on a second side of the base layer, which is opposite the first side. The hole collector includes a quantum-tunneling-barrier (QTB) layer situated adjacent to the base layer and a transparent conducting oxide (TCO) layer situated adjacent to the QTB layer. The TCO layer has a work function of at least 5.0 eV.

6. 发明申请

US20150270411A1 ALUMINUM GRID AS BACKSIDE CONDUCTOR ON EPITAXIAL SILICON THIN FILM SOLAR CELLS 审中-公开
标题翻译：铝网作为外延硅薄膜太阳能电池的背面导体
公开(公告)号：US20150270411A1
公开(公告)日：2015-09-24
申请号：US14691403
申请日：2015-04-20
申请人： Silevo, Inc.
发明人： Chentao Yu , Zheng Xu , Jiunn Benjamin Heng , Jianming Fu
IPC分类号： H01L31/02 , H01L31/0216 , H01L31/068 , H01L31/0224
CPC分类号： H01L31/0201 , H01L31/02167 , H01L31/02168 , H01L31/022425 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： One embodiment of the present invention provides a solar cell. The solar cell includes a substrate, a first heavily doped crystalline-Si (c-Si) layer situated above the substrate, a lightly doped c-Si layer situated above the first heavily doped crystalline-Si layer, a second heavily doped c-Si layer situated above the lightly doped c-Si layer, a front side electrode grid situated above the second heavily doped c-Si layer, and a backside electrode grid situated on the backside of the substrate.
摘要翻译：本发明的一个实施例提供一种太阳能电池。太阳能电池包括衬底，位于衬底上方的第一重掺杂结晶Si（c-Si）层，位于第一重掺杂晶体Si层上方的轻掺杂c-Si层，第二重掺杂c-Si 位于轻掺杂c-Si层上方的层，位于第二重掺杂c-Si层上方的前侧电极栅格，以及位于衬底背面的背面电极栅。

7. 发明申请

US20140345674A1 MOISTURE INGRESS RESISTANT PHOTOVOLTAIC MODULE 审中-公开
标题翻译：防潮耐光照明模块
公开(公告)号：US20140345674A1
公开(公告)日：2014-11-27
申请号：US14286823
申请日：2014-05-23
申请人： Silevo, Inc.
发明人： Bobby Yang , Jiunn Benjamin Heng , Jianming Fu , Zheng Xu
IPC分类号： H01L31/048 , H01L31/18
CPC分类号： H02S40/34 , B32B27/08 , B32B2457/12 , H01L31/02013 , H01L31/049 , H01L31/0747 , Y02E10/50
摘要： One embodiment of the present invention provides a photovoltaic (PV) module. The PV module includes a front-side glass cover facing sunlight, a plurality of interconnected PV cells situated below the glass cover, a plurality of bussing wires electrically coupled to the PV cells, and a back-sheet situated below the PV cells. The back-sheet comprises a metal layer sandwiched between a top and a bottom insulation layers. The back-sheet comprises a cut slot to facilitate the bussing wires to thread through the cut slot to reach a junction box situated below the back-sheet. The PV module further comprises one or more insulation layers inserted between the bussing wires and sidewalls of the cut slot in the back-sheet. The insulation layers are configured to insulate the bussing wires to the metal layer in the back-sheet.
摘要翻译：本发明的一个实施例提供一种光伏（PV）模块。 PV模块包括面向日光的前侧玻璃盖，位于玻璃盖下方的多个互连的PV电池，电耦合到PV电池的多个汇流线，以及位于PV电池下方的背板。背板包括夹在顶部和底部绝缘层之间的金属层。背板包括切口槽，以便于总线线穿过切割槽以到达位于底片下方的接线盒。 PV模块还包括一个或多个绝缘层，其插入在总线与背板中的切口槽的侧壁之间。绝缘层被构造成使总线与底片中的金属层绝缘。

8. 发明申请

US20140102524A1 NOVEL ELECTRON COLLECTORS FOR SILICON PHOTOVOLTAIC CELLS 审中-公开
标题翻译：用于硅光电池的新型电子收集器
公开(公告)号：US20140102524A1
公开(公告)日：2014-04-17
申请号：US14054688
申请日：2013-10-15
申请人： Silevo, Inc.
发明人： Zhigang Xie , Jiunn Benjamin Heng , Wei Wang , Jianming Fu , Zheng Xu
IPC分类号： H01L31/0352 , H01L31/18
CPC分类号： H01L31/035209 , H01L31/065 , H01L31/072 , H01L31/0747 , H01L31/1884 , Y02E10/50
摘要： One embodiment of the present invention provides a solar cell. The solar cell includes a base layer comprising crystalline Si (c-Si), an electron collector situated on a first side of the base layer, and a hole collector situated on a second side of the base layer, which is opposite the first side. The electron collector includes a quantum-tunneling-barrier (QTB) layer situated adjacent to the base layer and a transparent conducting oxide (TCO) layer situated adjacent to the QTB layer. The TCO layer has a work function of less than 4.2 eV.
摘要翻译：本发明的一个实施例提供一种太阳能电池。太阳能电池包括基底层，该基底层包含晶体Si（c-Si），位于基底层第一侧的电子收集体和位于第一侧相对的基底层的第二侧的孔收集体。电子收集器包括邻近基极层的量子隧道势垒（QTB）层和邻近QTB层的透明导电氧化物（TCO）层。 TCO层具有小于4.2eV的功函数。

9. 发明授权

US10074755B2 High efficiency solar panel 有权
公开(公告)号：US10074755B2
公开(公告)日：2018-09-11
申请号：US14563867
申请日：2014-12-08
申请人： Silevo, Inc.
发明人： Bobby Yang , Peter P. Nguyen , Jiunn Benjamin Heng , Anand J. Reddy , Zheng Xu
IPC分类号： H01L31/02 , H01L31/05 , H01L31/0224 , H01L31/042 , H01L31/0747
CPC分类号： H01L31/022433 , H01L31/042 , H01L31/0504 , H01L31/0747 , H01L2933/0033 , Y02E10/50
摘要： One embodiment of the present invention provides a solar panel. The solar panel includes a plurality of subsets of solar cells. The solar cells in a subset are coupled in series, and the subsets of solar cells are coupled in parallel. The number of solar cells in a respective subset is sufficiently large such that the output voltage of the solar panel is substantially the same as an output voltage of a conventional solar panel with all of its substantially square shaped solar cells coupled in series.

10. 发明授权

US09281436B2 Radio-frequency sputtering system with rotary target for fabricating solar cells 有权
标题翻译：具有用于制造太阳能电池的旋转靶的射频溅射系统
公开(公告)号：US09281436B2
公开(公告)日：2016-03-08
申请号：US14142605
申请日：2013-12-27
申请人： Silevo, Inc.
发明人： Zhigang Xie , Wei Wang , Zheng Xu , Jianming Fu
IPC分类号： C23C14/34 , H01J37/34 , H01L31/18 , H01J37/32
CPC分类号： H01J37/3414 , C23C14/3407 , C23C14/351 , H01J37/32082 , H01J37/32091 , H01J37/32137 , H01J37/3405 , H01J37/3417 , H01J37/342 , H01J37/3423 , H01J37/3438 , H01J37/3444 , H01J37/345 , H01J37/3452 , H01J37/347 , H01L31/02168 , H01L31/1876 , H01L31/1884 , Y02E10/50
摘要： One embodiment of the present invention provides a sputtering system for large-scale fabrication of solar cells. The sputtering system includes a reaction chamber, a rotary target situated inside the reaction chamber which is capable of rotating about a longitudinal axis, and an RF power source coupled to at least one end of the rotary target to enable RF sputtering. The length of the rotary target is between 0.5 and 5 meters.
摘要翻译：本发明的一个实施例提供了一种用于大规模制造太阳能电池的溅射系统。溅射系统包括反应室，位于反应室内部的能够围绕纵向轴线旋转的旋转靶，以及耦合到旋转靶的至少一端以实现RF溅射的RF电源。旋转靶的长度在0.5到5米之间。

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