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1. 发明授权

US5554863A Gate turn-off thyristor 失效
标题翻译：门极关断晶闸管
公开(公告)号：US5554863A
公开(公告)日：1996-09-10
申请号：US260331
申请日：1994-06-15
申请人： Sigeyasu Kouzuchi , Shuroku Sakurada , Takashi Saitoh , Hitoshi Komuro
发明人： Sigeyasu Kouzuchi , Shuroku Sakurada , Takashi Saitoh , Hitoshi Komuro
IPC分类号： H01L29/74 , H01L29/08 , H01L29/744 , H01L31/111
CPC分类号： H01L29/744 , H01L29/0834
摘要： A gate turn-off thyristor including: an n-type emitter semiconductor layer divided into a plurality of n-type areas; a p-type base semiconductor layer which cooperates with the n-type emitter semiconductor layer to form a first main circular surface; an n-type base semiconductor layer; and a p-type emitter semiconductor layer cooperating with the n-type base semiconductor layer to form a second main circular surface. An outer diameter of the p-type emitter semiconductor layer is smaller than that of the n-type emitter semiconductor layer. A first main electrode put in low resistance contact with the n-type emitter semiconductor layer is formed on the first main surface. A second main electrode put in low resistance contact with the p-type emitter layer and the n-type base semiconductor layer is formed on the second main surface. A control electrode is formed in the p-type base semiconductor on the first main surface. A first electrode plate larger in diameter than the n-type emitter semiconductor layer is connected electrically with the first main electrode. A second electrode plate larger in diameter than the n-type emitter semiconductor layer is connected electrically with the second main electrode.
摘要翻译：一种栅极截止晶闸管，包括：分为多个n型区域的n型发射极半导体层; p型基极半导体层，与n型发射极半导体层配合形成第一主圆面; n型基极半导体层; 以及与n型基底半导体层配合形成第二主圆形表面的p型发射极半导体层。 p型发射极半导体层的外径小于n型发射极半导体层的外径。在第一主表面上形成与n型发射极半导体层低电阻接触的第一主电极。在第二主表面上形成与p型发射极层和n型基极半导体层低电阻接触的第二主电极。控制电极形成在第一主表面上的p型基极半导体中。直径大于n型发射极半导体层的第一电极板与第一主电极电连接。直径大于n型发射极半导体层的第二电极板与第二主电极电连接。

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