专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08581638B2 High-side driver circuit 有权
标题翻译：高端驱动电路
公开(公告)号：US08581638B2
公开(公告)日：2013-11-12
申请号：US13596113
申请日：2012-08-28
申请人： Tsung-Lin Chen , Edward Yi Chang , Wei-Hua Chieng , Stone Cheng , Shyr-Long Jeng , Che-Wei Chang
发明人： Tsung-Lin Chen , Edward Yi Chang , Wei-Hua Chieng , Stone Cheng , Shyr-Long Jeng , Che-Wei Chang
IPC分类号： H03B1/00
CPC分类号： H03K17/063 , H03K2217/0063 , H03K2217/0081
摘要： The present invention provides a high-side driver circuit including a power transistor, the first transistor, the second transistor, the second capacitor, the second diode, a start-up circuit. The start-up circuit is coupled between a resistor and the second capacitor to complete a gate driving circuit. And, the aforementioned resistor can either be the gate resistance of the power transistor or an external resistor. The design of start-up circuit enables the functionality of the bootstrap capacitor of being charged to a designate voltage level. Thus, the depletion-mode transistor can be controlled to turn on/off without a floating voltage source or a negative voltage source.
摘要翻译：本发明提供一种包括功率晶体管，第一晶体管，第二晶体管，第二电容器，第二二极管，启动电路的高侧驱动电路。启动电路耦合在电阻器和第二电容器之间以完成栅极驱动电路。而且，上述电阻可以是功率晶体管的栅极电阻或外部电阻。启动电路的设计使得自举电容器的功能被充电到指定的电压电平。因此，耗尽型晶体管可以被控制为在没有浮动电压源或负电压源的情况下导通/截止。

2. 发明授权

US08547712B2 Power circuit and direct current to direct current converter thereof 有权
标题翻译：电源电路和直流电流转换为直流电转换器
公开(公告)号：US08547712B2
公开(公告)日：2013-10-01
申请号：US13014241
申请日：2011-01-26
申请人： Edward-Yi Chang , Shyr-Long Jeng , Ming-Tsan Peng
发明人： Edward-Yi Chang , Shyr-Long Jeng , Ming-Tsan Peng
IPC分类号： H02M3/335 , H02M7/06 , H02M7/217
CPC分类号： H02M7/2176
摘要： A power circuit is applicable to a Direct Current (DC) to DC converter. The power circuit includes a gate driver circuit and a High Electron Mobility Transistor (HEMT). The gate driver circuit functions as a Sigmoid (S) function and controls a gate and a source of the HEMT with a cross voltage of the sigmoid (S) type function. Accordingly, an overall characteristic curve of the HEMT and the gate driver circuit is like a characteristic curve of a single rectifier diode, so as to achieve a rectifying, freewheeling, or reversing effect. In addition, since an energy loss is low when the HEMT is conducted, the energy loss of the whole power circuit is much less than that of a conventional diode.
摘要翻译：电源电路适用于直流（DC）到直流转换器。电源电路包括栅极驱动电路和高电子迁移率晶体管（HEMT）。栅极驱动器电路用作S形（S）功能，并用S型功能的交叉电压控制HEMT的栅极和源极。因此，HEMT和栅极驱动电路的总体特性曲线与单个整流二极管的特性曲线相同，以实现整流，续流或反转效果。另外，由于在HEMT导通时能量损失低，所以整个电源电路的能量损耗比传统的二极管的能量损耗要小得多。

3. 发明授权

US08735713B2 Sun-chasing device 有权
标题翻译：太阳追逐装置
公开(公告)号：US08735713B2
公开(公告)日：2014-05-27
申请号：US13599086
申请日：2012-08-30
申请人： You-Long Sie , Edward Yi Chang , Shyr-Long Jeng , Wei-Hua Chieng , Bin-Han Lue , Ming-Tsan Peng , Chia-Hua Chang , Jwu-Shen Hu , Chien-Hsun Chiang
发明人： You-Long Sie , Edward Yi Chang , Shyr-Long Jeng , Wei-Hua Chieng , Bin-Han Lue , Ming-Tsan Peng , Chia-Hua Chang , Jwu-Shen Hu , Chien-Hsun Chiang
IPC分类号： F24J2/52 , F24J2/54
CPC分类号： F24S30/48 , F24S30/45 , F24S2030/131 , F24S2030/145 , Y02E10/47
摘要： A sun-chasing device is provided, including a base, a first transmitter disposed on the base, a second transmitter, a support, a carrier pivotally connected to the support for carrying a solar module, a first supporting component pivotally connected to the first transmitter and the carrier, and a second supporting component pivotally connected to the second transmitter and the carrier. The sun-chasing device has great rigidity and carrying ability against strong wind, and has great precision and rotation angle, such that a solar plate can precisely aim at sun for long time and thus the efficiency of a solar module is significantly increased.
摘要翻译：提供了一种太阳追逐装置，包括基座，设置在基座上的第一发射器，第二发射器，支撑件，枢轴连接到用于承载太阳能模块的支撑件的托架，枢转地连接到第一发射器的第一支撑部件和载体，以及枢转地连接到第二发射器和载体的第二支撑部件。太阳追光装置对强风具有很强的刚性和承载能力，具有很高的精度和旋转角度，使得太阳能板可以长时间精确地瞄准太阳，从而显着提高太阳能电池组件的效率。

4. 发明申请

US20130306829A1 SUN-CHASING DEVICE 有权
公开(公告)号：US20130306829A1
公开(公告)日：2013-11-21
申请号：US13599086
申请日：2012-08-30
申请人： You-Long Sie , Edward-Yi Chang , Shyr-Long Jeng , Wei-Hua Chieng , Bin-Han Lue , Ming-tsan Peng , Chia-Hua Chang , Jwu-Shen Hu , Chien-Hsun Chiang
发明人： You-Long Sie , Edward-Yi Chang , Shyr-Long Jeng , Wei-Hua Chieng , Bin-Han Lue , Ming-tsan Peng , Chia-Hua Chang , Jwu-Shen Hu , Chien-Hsun Chiang
IPC分类号： F16M11/18 , F24J2/38
CPC分类号： F24S30/48 , F24S30/45 , F24S2030/131 , F24S2030/145 , Y02E10/47
摘要： A sun-chasing device is provided, including a base, a first transmitter disposed on the base, a second transmitter, a support, a carrier pivotally connected to the support for carrying a solar module, a first supporting component pivotally connected to the first transmitter and the carrier, and a second supporting component pivotally connected to the second transmitter and the carrier. The sun-chasing device has great rigidity and carrying ability against strong wind, and has great precision and rotation angle, such that a solar plate can precisely aim at sun for long time and thus the efficiency of a solar module is significantly increased.
摘要翻译：提供了一种太阳追逐装置，包括基座，设置在基座上的第一发射器，第二发射器，支撑件，枢轴连接到用于承载太阳能模块的支撑件的托架，枢转地连接到第一发射器的第一支撑部件和载体，以及枢转地连接到第二发射器和载体的第二支撑部件。太阳追光装置对强风具有很强的刚性和承载能力，具有很高的精度和旋转角度，使得太阳能板可以长时间精确地瞄准太阳，从而显着提高太阳能电池组件的效率。

5. 发明申请

US20130241603A1 Current limit circuit apparatus 有权
标题翻译：限流电路装置
公开(公告)号：US20130241603A1
公开(公告)日：2013-09-19
申请号：US13596104
申请日：2012-08-28
申请人： Tsung-Lin CHEN , Edward Yi CHANG , Wei-Hua CHIENG , Stone CHENG , Shyr-Long JENG , Shin-Wei HUANG
发明人： Tsung-Lin CHEN , Edward Yi CHANG , Wei-Hua CHIENG , Stone CHENG , Shyr-Long JENG , Shin-Wei HUANG
IPC分类号： H03K3/00
CPC分类号： H03K17/163
摘要： The present invention provides a current limit circuit apparatus, coupled with the gate of a GaN transistor. The current limit circuit comprises a diode, a first transistor, a second transistor, a first resistor, a second resistor, a third resistor and a fourth resistor. The source and the drain of the first transistor couple with the diode. The source of the second transistor couples with the gate of the first transistor. The source of the first transistor couples with the first transistor. The source of the second transistor couples with the second resistor. The third resistor couples with the fourth resistor and the gate of the first transistor. The first transistor turned off and the gate current is limited. When the current of the gate of the GaN transistor exceeds the predetermined value, the breakdown voltage is increased by limiting the gate current.
摘要翻译：本发明提供一种与GaN晶体管的栅极耦合的限流电路装置。电流限制电路包括二极管，第一晶体管，第二晶体管，第一电阻器，第二电阻器，第三电阻器和第四电阻器。第一晶体管的源极和漏极与二极管耦合。第二晶体管的源极与第一晶体管的栅极耦合。第一晶体管的源极与第一晶体管耦合。第二晶体管的源极与第二电阻耦合。第三电阻器与第四电阻器和第一晶体管的栅极耦合。第一晶体管截止，栅极电流受限。当GaN晶体管的栅极的电流超过预定值时，通过限制栅极电流来增加击穿电压。

6. 发明申请

US20130161708A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体结构及其制造方法
公开(公告)号：US20130161708A1
公开(公告)日：2013-06-27
申请号：US13606447
申请日：2012-09-07
申请人： Ming-Tsan Peng , Shih-Tung Cheng , Edward Yi Chang , Po-Chien Chou , Shyr-Long Jeng , Chia-Hua Chang , Tsung-Lin Chen , Jian-Feng Tsai
发明人： Ming-Tsan Peng , Shih-Tung Cheng , Edward Yi Chang , Po-Chien Chou , Shyr-Long Jeng , Chia-Hua Chang , Tsung-Lin Chen , Jian-Feng Tsai
IPC分类号： H01L29/78 , H01L21/58
CPC分类号： H01L23/42 , H01L23/13 , H01L24/16 , H01L24/32 , H01L24/48 , H01L2224/131 , H01L2224/16225 , H01L2224/16227 , H01L2224/16245 , H01L2224/29139 , H01L2224/321 , H01L2224/32225 , H01L2224/32245 , H01L2224/3318 , H01L2224/48137 , H01L2224/48227 , H01L2224/73204 , H01L2924/00014 , H01L2924/15156 , H01L2924/00012 , H01L2924/014 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure includes a substrate, a die and a medium. The substrate has an upper substrate surface. The substrate has a trench extended downward from the upper substrate surface. The trench has a side trench surface. The die is in the trench. The die has a lower die surface and a side die surface. The lower die surface is below the upper substrate surface. A part of the trench between the side trench surface and the side die surface is filled with the medium.
摘要翻译：提供半导体结构及其制造方法。半导体结构包括基板，管芯和介质。基板具有上基板表面。衬底具有从上衬底表面向下延伸的沟槽。沟槽具有侧沟槽表面。死在沟里。模具具有下模表面和侧模表面。下模表面在上基板表面下方。侧沟槽表面和侧模表面之间的沟槽的一部分填充有介质。

7. 发明申请

US20120147640A1 POWER CIRCUIT AND DIRECT CURRENT TO DIRECT CURRENT CONVERTER THEREOF 有权
标题翻译：电源电流和直流电流直流电流转换器
公开(公告)号：US20120147640A1
公开(公告)日：2012-06-14
申请号：US13014241
申请日：2011-01-26
申请人： Edward Yi Chang , Shyr Long Jeng , Ming Tsan Peng
发明人： Edward Yi Chang , Shyr Long Jeng , Ming Tsan Peng
IPC分类号： H02M7/217 , H03K3/00
CPC分类号： H02M7/2176
摘要： A power circuit is applicable to a Direct Current (DC) to DC converter. The power circuit includes a gate driver circuit and a High Electron Mobility Transistor (HEMT). The gate driver circuit functions as a Sigmoid (S) function and controls a gate and a source of the HEMT with a cross voltage of the sigmoid (S) type function. Accordingly, an overall characteristic curve of the HEMT and the gate driver circuit is like a characteristic curve of a single rectifier diode, so as to achieve a rectifying, freewheeling, or reversing effect. In addition, since an energy loss is low when the HEMT is conducted, the energy loss of the whole power circuit is much less than that of a conventional diode.
摘要翻译：电源电路适用于直流（DC）到直流转换器。电源电路包括栅极驱动电路和高电子迁移率晶体管（HEMT）。栅极驱动器电路用作S形（S）功能，并用S型功能的交叉电压控制HEMT的栅极和源极。因此，HEMT和栅极驱动电路的总体特性曲线与单个整流二极管的特性曲线相同，以实现整流，续流或反转效果。另外，由于在HEMT导通时能量损失低，所以整个电源电路的能量损耗比传统的二极管的能量损耗要小得多。

8. 发明授权

US08736349B2 Current limit circuit apparatus 有权
标题翻译：限流电路装置
公开(公告)号：US08736349B2
公开(公告)日：2014-05-27
申请号：US13596104
申请日：2012-08-28
申请人： Tsung-Lin Chen , Edward Yi Chang , Wei-Hua Chieng , Stone Cheng , Shyr-Long Jeng , Shin-Wei Huang
发明人： Tsung-Lin Chen , Edward Yi Chang , Wei-Hua Chieng , Stone Cheng , Shyr-Long Jeng , Shin-Wei Huang
IPC分类号： H03K17/687
CPC分类号： H03K17/163
摘要： The present invention provides a current limit circuit apparatus, coupled with the gate of a GaN transistor. The current limit circuit comprises a diode, a first transistor, a second transistor, a first resistor, a second resistor, a third resistor and a fourth resistor. The source and the drain of the first transistor couple with the diode. The source of the second transistor couples with the gate of the first transistor. The source of the first transistor couples with the first transistor. The source of the second transistor couples with the second resistor. The third resistor couples with the fourth resistor and the gate of the first transistor. The first transistor turned off and the gate current is limited. When the current of the gate of the GaN transistor exceeds the predetermined value, the breakdown voltage is increased by limiting the gate current.
摘要翻译：本发明提供一种与GaN晶体管的栅极耦合的限流电路装置。电流限制电路包括二极管，第一晶体管，第二晶体管，第一电阻器，第二电阻器，第三电阻器和第四电阻器。第一晶体管的源极和漏极与二极管耦合。第二晶体管的源极与第一晶体管的栅极耦合。第一晶体管的源极与第一晶体管耦合。第二晶体管的源极与第二电阻耦合。第三电阻器与第四电阻器和第一晶体管的栅极耦合。第一晶体管截止，栅极电流受限。当GaN晶体管的栅极的电流超过预定值时，通过限制栅极电流来增加击穿电压。

9. 发明申请

US20130241601A1 High-side driver circuit 有权
公开(公告)号：US20130241601A1
公开(公告)日：2013-09-19
申请号：US13596113
申请日：2012-08-28
申请人： Tsung-Lin CHEN , Edward Yi CHANG , Wei-Hua CHIENG , Stone CHENG , Shyr-Long JENG , Che-Wei CHANG
发明人： Tsung-Lin CHEN , Edward Yi CHANG , Wei-Hua CHIENG , Stone CHENG , Shyr-Long JENG , Che-Wei CHANG
IPC分类号： H03K3/00
CPC分类号： H03K17/063 , H03K2217/0063 , H03K2217/0081
摘要： The present invention provides a high-side driver circuit including a power transistor, the first transistor, the second transistor, the second capacitor, the second diode, a start-up circuit. The start-up circuit is coupled between a resistor and the second capacitor to complete a gate driving circuit. And, the aforementioned resistor can either be the gate resistance of the power transistor or an external resistor. The design of start-up circuit enables the functionality of the bootstrap capacitor of being charged to a designate voltage level. Thus, the depletion-mode transistor can be controlled to turn on/off without a floating voltage source or a negative voltage source.

10. 发明申请

US20130300322A1 EMBEDDED INDUSTRIAL CONTROLLER WITH BICYCLE FRAME SHAPE 审中-公开
标题翻译：嵌入式工业控制器，带有自行车框架形状
公开(公告)号：US20130300322A1
公开(公告)日：2013-11-14
申请号：US13614491
申请日：2012-09-13
申请人： Yung-Sheng Tseng , Ching-Wei Shih , Shyr-Long Jeng , Edward-Yi Chang , Chia-Hua Chang , Bing-Shiang Yang , Stone Cheng , Wei-Hua Chieng , Tsung-Lin Chen
发明人： Yung-Sheng Tseng , Ching-Wei Shih , Shyr-Long Jeng , Edward-Yi Chang , Chia-Hua Chang , Bing-Shiang Yang , Stone Cheng , Wei-Hua Chieng , Tsung-Lin Chen
IPC分类号： H02B1/26 , H02P7/00
CPC分类号： B62M6/45
摘要： An embedded industrial controller with a bicycle frame shape is disclosed. The embedded industrial controller includes a casing with the bicycle frame shape having an upper tube, a lower tube, a front fork, a rear lower fork, a rear upper fork and a base tube, a motherboard, a battery module, a power electrical port and a plurality of input and output electrical ports. The embedded industrial controller with a bicycle frame shape of the present invention has significantly improved functions than the conventional industrial controller, and further meets the conventional requirements such as dust proof, vibration proof, and heat dissipation.
摘要翻译：公开了一种具有自行车框架形状的嵌入式工业控制器。嵌入式工业控制器包括具有自行车框架形状的壳体，其具有上管，下管，前叉，后下叉，后上叉和基管，母板，电池模块，电源端口以及多个输入和输出电端口。具有本发明的自行车车架形状的嵌入式工业控制器具有比常规工业控制器更大的功能，并且进一步满足诸如防尘，防振和散热的常规要求。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式