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1. 发明授权

US08488299B2 Capacitor structure 有权
标题翻译：电容结构
公开(公告)号：US08488299B2
公开(公告)日：2013-07-16
申请号：US12841456
申请日：2010-07-22
申请人： Shih-Hsien Wu , Min-Lin Lee , Shinn-Juh Lai , Shur-Fen Liu , Meng-Hua Chen , Chin-Hsien Hung
发明人： Shih-Hsien Wu , Min-Lin Lee , Shinn-Juh Lai , Shur-Fen Liu , Meng-Hua Chen , Chin-Hsien Hung
IPC分类号： H01G4/005 , H01G5/06
CPC分类号： H01G4/005
摘要： The disclosure provides a capacitor structure. A first dielectric layer is disposed over the first electrode layer. A second electrode layer is disposed over the first dielectric layer. At least one of the first electrode layer and the second electrode layer has a peak-valley like structure to create at least two different gap distances therebetween, thereby providing parallel combinations of at least two different capacitances.
摘要翻译：本公开提供一种电容器结构。第一电介质层设置在第一电极层上。第二电极层设置在第一介电层上。第一电极层和第二电极层中的至少一个具有峰谷状结构，以在它们之间产生至少两个不同的间隙距离，从而提供至少两个不同电容的并联组合。

2. 发明申请

US20120068177A1 MEASURING APPARATUS 有权
标题翻译：测量装置
公开(公告)号：US20120068177A1
公开(公告)日：2012-03-22
申请号：US13308523
申请日：2011-11-30
申请人： Ra-Min Tain , Ming-Ji Dai , Shyh-Shyuan Sheu , Chih-Sheng Lin , Shih-Hsien Wu
发明人： Ra-Min Tain , Ming-Ji Dai , Shyh-Shyuan Sheu , Chih-Sheng Lin , Shih-Hsien Wu
IPC分类号： H01L25/07
CPC分类号： G01B7/18 , G01L1/18 , G01L1/2206 , H01L2224/16145
摘要： A measuring apparatus including a first chip, a first circuit layer, a first heater, a first stress sensor and a second circuit layer is provided. The first chip has a first through silicon via, a first surface and a second surface opposite to the first surface. The first circuit layer is disposed on the first surface. The first heater and the first stress sensor are disposed on the first surface and connected to the first circuit layer. The second circuit layer is disposed on the second surface. The first heater comprises a plurality of first switches connected in series to generate heat.
摘要翻译：提供了包括第一芯片，第一电路层，第一加热器，第一应力传感器和第二电路层的测量装置。第一芯片具有第一通孔硅通孔，第一表面和与第一表面相对的第二表面。第一电路层设置在第一表面上。第一加热器和第一应力传感器设置在第一表面上并连接到第一电路层。第二电路层设置在第二表面上。第一加热器包括串联连接以产生热量的多个第一开关。

3. 发明授权

US07893359B2 Embedded capacitor core having a multiple-layer structure 有权
标题翻译：具有多层结构的嵌入式电容器芯
公开(公告)号：US07893359B2
公开(公告)日：2011-02-22
申请号：US11470435
申请日：2006-09-06
申请人： Shih-Hsien Wu , Min-Lin Lee , Shinn-Juh Lay , Chih-Hao Chang
发明人： Shih-Hsien Wu , Min-Lin Lee , Shinn-Juh Lay , Chih-Hao Chang
IPC分类号： H05K1/16 , H05K1/18
CPC分类号： H05K1/162 , H05K3/4611 , H05K2201/0209 , H05K2201/09309 , Y10T29/43 , Y10T29/49126
摘要： An embedded capacitor core including a first set of capacitors, a second set of capacitors, and an inter-layer dielectric film between the first set of capacitors and the second set of capacitors. The first set of capacitors includes: a first conductive pattern comprising at least two conductive electrodes; a second conductive pattern comprising at least two conductive electrodes corresponding to the two conductive electrodes of the first conductive pattern; and a first dielectric film between the first conductive pattern and the second conductive pattern. The second set of capacitors includes: a third conductive pattern comprising at least two conductive electrodes; a fourth conductive pattern comprising at least two conductive electrodes corresponding to the two conductive electrodes of the third conductive pattern; and a second dielectric film between the third conductive pattern and the fourth conductive pattern.
摘要翻译：一种嵌入式电容器芯，包括第一组电容器，第二组电容器和在第一组电容器和第二组电容器之间的层间电介质膜。第一组电容器包括：包括至少两个导电电极的第一导电图案; 第二导电图案，包括对应于第一导电图案的两个导电电极的至少两个导电电极; 以及在第一导电图案和第二导电图案之间的第一电介质膜。第二组电容器包括：包括至少两个导电电极的第三导电图案; 第四导电图案，包括对应于第三导电图案的两个导电电极的至少两个导电电极; 以及在第三导电图案和第四导电图案之间的第二电介质膜。

4. 发明申请

US20110019335A1 CAPACITOR STRUCTURE 有权
标题翻译：电容结构
公开(公告)号：US20110019335A1
公开(公告)日：2011-01-27
申请号：US12841456
申请日：2010-07-22
申请人： Shih-Hsien WU , Min-Lin LEE , Shinn-Juh LAI , Shur-Fen LIU , Meng-Hua CHEN , Chin-Hsien HUNG
发明人： Shih-Hsien WU , Min-Lin LEE , Shinn-Juh LAI , Shur-Fen LIU , Meng-Hua CHEN , Chin-Hsien HUNG
IPC分类号： H01G4/005
CPC分类号： H01G4/005
摘要： The disclosure provides a capacitor structure. A first dielectric layer is disposed over the first electrode layer. A second electrode layer is disposed over the first dielectric layer. At least one of the first electrode layer and the second electrode layer has a peak-valley like structure to create at least two different gap distances therebetween, thereby providing parallel combinations of at least two different capacitances.
摘要翻译：本公开提供一种电容器结构。第一电介质层设置在第一电极层上。第二电极层设置在第一介电层上。第一电极层和第二电极层中的至少一个具有峰谷状结构，以在它们之间产生至少两个不同的间隙距离，从而提供至少两个不同电容的并联组合。

5. 发明申请

US20100321862A1 Capacitor devices 有权
标题翻译：电容器件
公开(公告)号：US20100321862A1
公开(公告)日：2010-12-23
申请号：US12805886
申请日：2010-08-23
申请人： Shih-Hsien Wu , Shinn-Juh Lai , Min-Lin Lee , Shur-Fen Liu
发明人： Shih-Hsien Wu , Shinn-Juh Lai , Min-Lin Lee , Shur-Fen Liu
IPC分类号： H01G4/06
CPC分类号： H01G4/06 , H01G4/12 , H01G4/1227 , H01G4/14 , H01G4/20 , H01G4/206 , H05K1/162 , H05K3/4611 , H05K2201/0187 , H05K2201/0195 , H05K2201/09672 , H05K2201/2036 , Y10T29/417
摘要： A capacitor device with a capacitance is introduced. The capacitor device includes at least one capacitive element. The at least capacitive element comprises a pair of first conductive layers being opposed to each other, at least one first dielectric layer formed on a surface of at least one of the first conductive layers, and a second dielectric layer being sandwiched between the first conductive layers. The first dielectric layer has a first dielectric constant and the second dielectric layer has a second dielectric constant. The capacitance of the capacitor device depends on dielectric parameters of the first dielectric layer and the second dielectric layer. The dielectric parameters comprise the first dielectric constant and thickness of the at least one first dielectric layer and the second dielectric constant and thickness of the second dielectric layer.
摘要翻译：引入具有电容的电容器件。电容器装置包括至少一个电容元件。所述至少电容元件包括彼此相对的一对第一导电层，至少一个形成在所述第一导电层中的至少一个的表面上的第一电介质层，以及夹在所述第一导电层。第一介电层具有第一介电常数，第二介电层具有第二介电常数。电容器器件的电容取决于第一介电层和第二介电层的介电参数。介电参数包括第一介电常数和至少一个第一介电层的厚度和第二介电常数和第二介电层的厚度。

6. 发明申请

US20090180236A1 STEPWISE CAPACITOR STRUCTURE, FABRICATION METHOD THEREOF AND SUBSTRATE EMPLOYING THE SAME 有权
标题翻译：步骤电容器结构，其制造方法和使用其的基板
公开(公告)号：US20090180236A1
公开(公告)日：2009-07-16
申请号：US12410466
申请日：2009-03-25
申请人： Min-Lin Lee , Shih-Hsien Wu , Shinn-Juh Lai , Shur-Fen Liu
发明人： Min-Lin Lee , Shih-Hsien Wu , Shinn-Juh Lai , Shur-Fen Liu
IPC分类号： H01G4/30 , H01L21/34
CPC分类号： H01G4/30 , H01G4/012 , H01G4/232 , H01L23/50 , H01L23/642 , H01L28/40 , H01L2224/16225 , H01L2924/09701 , H01L2924/3011
摘要： A stepwise capacitor structure includes at least one stepwise conductive layer. The stepwise capacitor represents a feature of multiple capacitors. When currents flow through the stepwise capacitor, different current paths are presented in between an upper conductor and a bottom conductor of the stepwise capacitor in response to different current frequency; different inductor is induced in each path and decoupled by a stepwise capacitor structure as disclosed herein.
摘要翻译：逐步电容器结构包括至少一个逐步导电层。逐步电容器表示多个电容器的特征。当电流流过逐级电容器时，响应于不同的电流频率，在逐层电容器的上导体和底导体之间存在不同的电流路径; 在每个路径中感应不同的电感器，并通过如本文所公开的逐步电容器结构去耦合。

7. 发明申请

US20070164395A1 CHIP PACKAGE WITH BUILT-IN CAPACITOR STRUCTURE 审中-公开
标题翻译：具有内置电容结构的芯片封装
公开(公告)号：US20070164395A1
公开(公告)日：2007-07-19
申请号：US11308493
申请日：2006-03-30
申请人： Jiin-Shing Perng , Shih-Hsien Wu , Min-Lin Lee , Shinn-Juh Lay
发明人： Jiin-Shing Perng , Shih-Hsien Wu , Min-Lin Lee , Shinn-Juh Lay
IPC分类号： H01L29/00
CPC分类号： H01L23/642 , H01L23/13 , H01L23/3107 , H01L23/4951 , H01L23/49589 , H01L23/49816 , H01L23/49822 , H01L24/48 , H01L24/49 , H01L2224/32225 , H01L2224/48091 , H01L2224/4824 , H01L2224/49109 , H01L2224/4911 , H01L2224/73215 , H01L2924/00014 , H01L2924/01033 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/19107 , H01L2924/00 , H01L2224/45099 , H01L2224/05599
摘要： A chip package with built-in capacitor structure including an integrated circuit (IC) unit, a capacitor unit, a carrier and a molding compound is provided. The capacitor unit is disposed on the IC unit and includes a first metal foil, a second metal foil, and a dielectric layer disposed between the first metal foil and the second metal foil. The carrier is disposed on the surface away from the dielectric layer of the second metal foil. The first metal foil is electrically connected to the carrier, the second metal foil is electrically connected to the carrier, the IC unit is electrically connected to the carrier, the IC unit is electrically connected to the first metal foil, and the IC unit is electrically connected to the second metal foil. The molding compound is disposed on the carrier for fixing the IC unit, the capacitor unit and the carrier.
摘要翻译：提供具有集成电路（IC）单元，电容器单元，载体和模塑料的内置电容器结构的芯片封装。电容器单元设置在IC单元上，并且包括第一金属箔，第二金属箔和设置在第一金属箔和第二金属箔之间的电介质层。载体设置在远离第二金属箔的电介质层的表面上。第一金属箔与载体电连接，第二金属箔电连接到载体上，IC单元与载体电连接，IC单元电连接到第一金属箔，并且IC单元电气连接到第二金属箔。模制化合物设置在载体上用于固定IC单元，电容器单元和载体。

8. 发明申请

US20060285273A1 Composite distributed dielectric structure 失效
标题翻译：复合分布介质结构
公开(公告)号：US20060285273A1
公开(公告)日：2006-12-21
申请号：US11156350
申请日：2005-06-17
申请人： Chih-Hao Chang , Shih-Hsien Wu , Min-Lin Lee , Shinn-Juh Lay
发明人： Chih-Hao Chang , Shih-Hsien Wu , Min-Lin Lee , Shinn-Juh Lay
IPC分类号： H01G4/20
CPC分类号： H05K1/024 , H01L23/49822 , H01L2924/0002 , H01L2924/3011 , H01P3/081 , H01P3/085 , H05K1/0298 , H05K3/386 , H05K2201/0187 , H05K2201/0195 , H05K2201/09881 , H01L2924/00
摘要： This invention discloses a composite distributed dielectric structure. It comprises one or more conductor layers, one or more dielectric layers distributed on the conductor layers, and one or more conductor traces distributed on the dielectric layers. One or more dielectric plates can be further around the conductor traces. The dielectric layers or plates may or may not have plural dielectric materials therein, respectively described in two embodiments. Each conductor trace lies on a dielectric material without crossing two different dielectric materials. Two or more dielectric layers may be stacked on the conductor layers The invention provides a low cost and practical dielectric structure for interconnect systems to reduce dielectric loss, cross talk, and signal propagation delay and to well control the impedance matching while maintaining proper heat dissipation and noise reduction at high frequency transmission.
摘要翻译：本发明公开了一种复合分布介质结构。它包括一个或多个导体层，分布在导体层上的一个或多个电介质层，以及分布在电介质层上的一个或多个导体迹线。一个或多个电介质板可以进一步围绕导体迹线。在两个实施例中分别描述了介电层或板可以具有或可以不具有多个电介质材料。每个导体迹线位于介电材料上，而不会穿过两种不同的介电材料。两个或多个电介质层可以堆叠在导体层上本发明为互连系统提供了一种低成本和实用的电介质结构，以减少介质损耗，串扰和信号传播延迟，并且在保持适当的散热的同时良好地控制阻抗匹配，高频传输降噪。

9. 发明授权

US08507909B2 Measuring apparatus that includes a chip with a through silicon via, a heater having plural switches, and a stress sensor 有权
标题翻译：包括具有贯通硅通孔的芯片，具有多个开关的加热器和应力传感器的测量装置
公开(公告)号：US08507909B2
公开(公告)日：2013-08-13
申请号：US13308523
申请日：2011-11-30
申请人： Ra-Min Tain , Ming-Ji Dai , Shyh-Shyuan Sheu , Chih-Sheng Lin , Shih-Hsien Wu
发明人： Ra-Min Tain , Ming-Ji Dai , Shyh-Shyuan Sheu , Chih-Sheng Lin , Shih-Hsien Wu
IPC分类号： H01L23/58
CPC分类号： G01B7/18 , G01L1/18 , G01L1/2206 , H01L2224/16145
摘要： A measuring apparatus including a first chip, a first circuit layer, a first heater, a first stress sensor and a second circuit layer is provided. The first chip has a first through silicon via, a first surface and a second surface opposite to the first surface. The first circuit layer is disposed on the first surface. The first heater and the first stress sensor are disposed on the first surface and connected to the first circuit layer. The second circuit layer is disposed on the second surface. The first heater comprises a plurality of first switches connected in series to generate heat.
摘要翻译：提供了包括第一芯片，第一电路层，第一加热器，第一应力传感器和第二电路层的测量装置。第一芯片具有第一通孔硅通孔，第一表面和与第一表面相对的第二表面。第一电路层设置在第一表面上。第一加热器和第一应力传感器设置在第一表面上并连接到第一电路层。第二电路层设置在第二表面上。第一加热器包括串联连接以产生热量的多个第一开关。

10. 发明授权

US08227894B2 Stepwise capacitor structure and substrate employing the same 有权
标题翻译：逐步电容器结构和使用它的衬底
公开(公告)号：US08227894B2
公开(公告)日：2012-07-24
申请号：US12410466
申请日：2009-03-25
申请人： Min-Lin Lee , Shih-Hsien Wu , Shinn-Juh Lai , Shur-Fen Liu
发明人： Min-Lin Lee , Shih-Hsien Wu , Shinn-Juh Lai , Shur-Fen Liu
IPC分类号： H01L29/423
CPC分类号： H01G4/30 , H01G4/012 , H01G4/232 , H01L23/50 , H01L23/642 , H01L28/40 , H01L2224/16225 , H01L2924/09701 , H01L2924/3011
摘要： A stepwise capacitor structure includes at least one stepwise conductive layer. The stepwise capacitor represents a feature of multiple capacitors. When currents flow through the stepwise capacitor, different current paths are presented in between an upper conductor and a bottom conductor of the stepwise capacitor in response to different current frequency; different inductor is induced in each path and decoupled by a stepwise capacitor structure as disclosed herein.
摘要翻译：逐步电容器结构包括至少一个逐步导电层。逐步电容器表示多个电容器的特征。当电流流过逐级电容器时，响应于不同的电流频率，在逐层电容器的上导体和底导体之间存在不同的电流路径; 在每个路径中感应不同的电感器，并通过如本文所公开的逐步电容器结构去耦合。

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