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1. 发明授权

US06780532B2 Photodiode detector and fabrication method thereof 失效
标题翻译：光电二极管检测器及其制造方法
公开(公告)号：US06780532B2
公开(公告)日：2004-08-24
申请号：US10315586
申请日：2002-12-10
申请人： Seung-Kee Yang , Jea-Myung Baek
发明人： Seung-Kee Yang , Jea-Myung Baek
IPC分类号： B32B900
CPC分类号： H01L31/0203 , H01L31/0735 , H01L31/184 , Y02E10/544
摘要： Disclosed is a photodiode detector including: an InP substrate; a u-In0.53Ga0.47As layer grown and stacked on the InP substrate; an u-Inp layer stacked on an upper portion of the u-In0.53Ga0.47As layer; a SiNx insulation layer stacked on an upper portion of u-Inp layer; an additional insulation layer stacked on an upper portion of the SiNx insulation layer; a P-InP layer formed by Zn diffusing on an u-Inp layer portion below an opening formed on a predetermined position between the additional insulation layer and the SiNx insulation layer; a P-metal layer positioned on an upper portion of the additional insulation layer; and an N-metal layer formed on a lower portion of the InP substrate together with a non-reflection layer. The photodiode detector of the present invention, forms BCB material having a low dielectric constant, which is relatively thick, on the upper portion of the SiNx insulation layer, thereby obtaining the desired capacitance.
摘要翻译：公开了一种光电二极管检测器，包括：InP衬底; 在InP衬底上生长和堆叠的u-In 0.53 Ga 0.47 As层; u-Inp层，堆叠在u-In0.53Ga0.47As层的上部; 层叠在u-Inp层的上部的SiNx绝缘层; 层叠在SiNx绝缘层的上部的附加绝缘层; 通过Zn扩散在形成在附加绝缘层和SiNx绝缘层之间的预定位置处的开口下方的u-Inp层部分上形成的P-InP层; 位于所述附加绝缘层的上部的P金属层; 以及与非反射层一起形成在InP衬底的下部的N金属层。本发明的光电二极管检测器在SiNx绝缘层的上部形成相对厚的低介电常数的BCB材料，从而获得所需的电容。

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