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1. 发明授权

US08374364B2 Acoustic sensor and method of manufacturing the same 有权
标题翻译：声传感器及其制造方法
公开(公告)号：US08374364B2
公开(公告)日：2013-02-12
申请号：US13096621
申请日：2011-04-28
申请人： Takashi Kasai , Yoshitaka Tsurukame , Seung Kae Moon , Shinichi Terasaka
发明人： Takashi Kasai , Yoshitaka Tsurukame , Seung Kae Moon , Shinichi Terasaka
IPC分类号： H04R19/04 , H01L21/00 , H01L29/84
CPC分类号： H04R19/005 , H04R19/04
摘要： An acoustic sensor lengthens the portion of the beam portion not fixed with the anchor without lowering the strength of the beam portion and the supporting strength of the diaphragm. On an upper surface of a silicon substrate, a beam portion made of polysilicon is formed through a second sacrifice layer made of silicon dioxide film on an extended portion of a first sacrifice layer made of polysilicon. The extended portion is formed under a region excluding a distal end of the beam portion. The extended portion is removed by etching from a back chamber arranged in the silicon substrate to form a hollow portion in a region excluding the distal end of the lower surface of the beam portion, and then the second sacrifice layer is removed by etching. The second sacrifice layer remaining on the lower surface of the distal end of the beam portion forms an anchor.
摘要翻译：声传感器延长未固定在锚杆上的梁部分，而不会降低梁部分的强度和隔膜的支撑强度。在硅衬底的上表面上，通过在由多晶硅制成的第一牺牲层的延伸部分上的由二氧化硅膜制成的第二牺牲层形成由多晶硅制成的束部分。延伸部形成在除了梁部的前端以外的区域。延伸部分通过从布置在硅衬底中的后室蚀刻除去，以在除了光束部分的下表面的远端之外的区域中形成中空部分，然后通过蚀刻去除第二牺牲层。残留在梁部分的远端的下表面上的第二牺牲层形成锚。

2. 发明申请

US20110266640A1 ACOUSTIC SENSOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：声学传感器及其制造方法
公开(公告)号：US20110266640A1
公开(公告)日：2011-11-03
申请号：US13096621
申请日：2011-04-28
申请人： Takashi Kasai , Yoshitaka Tsurukame , Seung Kae Moon , Shinichi Terasaka
发明人： Takashi Kasai , Yoshitaka Tsurukame , Seung Kae Moon , Shinichi Terasaka
IPC分类号： H01L29/84 , H01L21/02
CPC分类号： H04R19/005 , H04R19/04
摘要： An acoustic sensor lengthens the portion of the beam portion not fixed with the anchor without lowering the strength of the beam portion and the supporting strength of the diaphragm. On an upper surface of a silicon substrate, a beam portion made of polysilicon is formed through a second sacrifice layer made of silicon dioxide film on an extended portion of a first sacrifice layer made of polysilicon. The extended portion is formed under a region excluding a distal end of the beam portion. The extended portion is removed by etching from a back chamber arranged in the silicon substrate to form a hollow portion in a region excluding the distal end of the lower surface of the beam portion, and then the second sacrifice layer is removed by etching. The second sacrifice layer remaining on the lower surface of the distal end of the beam portion forms an anchor.
摘要翻译：声传感器延长未固定在锚杆上的梁部分，而不会降低梁部分的强度和隔膜的支撑强度。在硅衬底的上表面上，通过在由多晶硅制成的第一牺牲层的延伸部分上的由二氧化硅膜制成的第二牺牲层形成由多晶硅制成的束部分。延伸部形成在除了梁部的前端以外的区域。延伸部分通过从布置在硅衬底中的后室蚀刻除去，以在除了光束部分的下表面的远端之外的区域中形成中空部分，然后通过蚀刻去除第二牺牲层。残留在梁部分的远端的下表面上的第二牺牲层形成锚。

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