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    • 2. 发明授权
    • Multilayer-structured bolometer and method of fabricating the same
    • 多层结构测辐射热计及其制造方法
    • US07667202B2
    • 2010-02-23
    • US12182456
    • 2008-07-30
    • Sang Hoon CheonHo Jun RyuWoo Seok YangSeong Mok ChoByoung Gon YuChang Auck Choi
    • Sang Hoon CheonHo Jun RyuWoo Seok YangSeong Mok ChoByoung Gon YuChang Auck Choi
    • G01J5/20
    • G01J5/20G01J5/02G01J5/023
    • Provided are a multilayer-structured bolometer and a method of fabricating the same. In the multilayer-structured bolometer, the number of support arms supporting the body of a sensor structure is reduced to one, and two electrodes are formed on the one support arm. Thus, the sensor structure is electrically connected with a substrate through the only one support arm. According to the multilayer-structured bolometer and method of fabricating the bolometer, the thermal conductivity of the sensor structure is considerably reduced to remarkably improve sensitivity to temperature, and also the pixel size of the bolometer is reduced to obtain high-resolution thermal images. In addition, the multilayer-structured bolometer can have a high fill-factor due to a sufficiently large infrared-absorbing layer, and thus can improve infrared absorbance.
    • 提供一种多层结构的测辐射热计及其制造方法。 在多层结构的测辐射热计中,支撑传感器结构的主体的支撑臂的数量减少到一个,并且在一个支撑臂上形成两个电极。 因此,传感器结构通过仅一个支撑臂与基板电连接。 根据多层结构的测辐射热计和制造测辐射热计的方法,传感器结构的导热性显着降低,显着提高了对温度的敏感性,还减小了测辐射热计的像素尺寸以获得高分辨率的热图像。 此外,由于具有足够大的红外线吸收层,多层结构的测辐射热计可以具有高的填充因子,因此可以提高红外吸收。
    • 5. 发明申请
    • BOLOMETER AND METHOD OF MANUFACTURING THE SAME
    • 测量仪及其制造方法
    • US20080135758A1
    • 2008-06-12
    • US11776945
    • 2007-07-12
    • Woo Seok YANGSeong Mok ChoHojun RyuByoung Gon Yu
    • Woo Seok YANGSeong Mok ChoHojun RyuByoung Gon Yu
    • G01J5/00H01L21/00H01L27/14
    • H01L27/14669G01J5/20H01L27/14683
    • Provided are a bolometer and a method of manufacturing the bolometer. The bolometer includes: a semiconductor substrate comprising a detection circuit; a reflective layer disposed in an area of a surface of the semiconductor substrate; metal pads disposed on the surface of the semiconductor substrate beside both sides of the reflective layer to keep predetermined distances from the both sides of the reflective layer; and a sensor structure forming a space corresponding to quarter of an infrared wavelength (λ/4) from a surface of the reflective layer and positioned above the semiconductor substrate, wherein the sensor structure includes: a body including a polycrystalline resistive layer formed of one of doped Si and Si1-xGex (where x=0.2˜0.5) to be positioned above the reflective layer; and support arms positioned outside the body to be electrically connected to the metal pads.
    • 提供测辐射热度计和制造测辐射热计的方法。 测辐射热计包括:包括检测电路的半导体衬底; 设置在所述半导体衬底的表面的区域中的反射层; 设置在半导体衬底的表面上的金属焊盘,位于反射层的两侧,以保持与反射层两侧的预定距离; 以及传感器结构,其从所述反射层的表面形成对应于红外波长(λ/ 4)的四分之一并位于所述半导体衬底上方的空间,其中所述传感器结构包括:主体,包括由以下之一形成的多晶电阻层: 掺杂的Si和Si 1-x Ge x x(其中x = 0.2〜0.5)位于反射层上方; 以及位于主体外部的支撑臂,以电连接到金属垫。