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1. 发明授权

US08143579B2 Resistive material for bolometer, bolometer for infrared detector using the material, and method of manufacturing the bolometer 有权
标题翻译：辐射热测量仪的电阻材料，使用该材料的红外探测器的测辐射热仪，以及制造测辐射热计的方法
公开(公告)号：US08143579B2
公开(公告)日：2012-03-27
申请号：US12859466
申请日：2010-08-19
申请人： Woo Seok Yang , Sang Hoon Cheon , Seong Mok Cho , Ho Jun Ryu , Chang Auck Choi
发明人： Woo Seok Yang , Sang Hoon Cheon , Seong Mok Cho , Ho Jun Ryu , Chang Auck Choi
IPC分类号： G01J5/20
CPC分类号： G01J5/04 , G01J5/046
摘要： A resistive material for a bolometer, a bolometer for an infrared detector using the material, and a method of manufacturing the bolometer are provided. In the resistive material, at least one element selected from the group consisting of nitrogen (N), oxygen (O) and germanium (Ge) is included in antimony (Sb). The resistive material has superior properties such as high temperature coefficient of resistance (TCR), low resistivity, a low noise constant, and is easily formed in a thin film structure by sputtering typically used in a complementary metal-oxide semiconductor (CMOS) process, so that it can be used as a resistor for the bolometer for an uncooled infrared detector, and thus provide the infrared detector with superior temperature precision.
摘要翻译：提供了用于测辐射热力计的电阻材料，用于使用该材料的红外探测器的测辐射热计，以及制造测辐射热计的方法。在电阻材料中，选自氮（N），氧（O）和锗（Ge）中的至少一种元素包括在锑（Sb）中。电阻材料具有优异的性能，例如高温电阻系数（TCR），低电阻率，低噪声常数，并且易于通过通常用于互补金属氧化物半导体（CMOS）工艺中的溅射在薄膜结构中形成，因此它可以用作非制冷红外探测器的辐射热计的电阻器，从而为红外检测器提供出色的温度精度。

2. 发明授权

US07667202B2 Multilayer-structured bolometer and method of fabricating the same 失效
标题翻译：多层结构测辐射热计及其制造方法
公开(公告)号：US07667202B2
公开(公告)日：2010-02-23
申请号：US12182456
申请日：2008-07-30
申请人： Sang Hoon Cheon , Ho Jun Ryu , Woo Seok Yang , Seong Mok Cho , Byoung Gon Yu , Chang Auck Choi
发明人： Sang Hoon Cheon , Ho Jun Ryu , Woo Seok Yang , Seong Mok Cho , Byoung Gon Yu , Chang Auck Choi
IPC分类号： G01J5/20
CPC分类号： G01J5/20 , G01J5/02 , G01J5/023
摘要： Provided are a multilayer-structured bolometer and a method of fabricating the same. In the multilayer-structured bolometer, the number of support arms supporting the body of a sensor structure is reduced to one, and two electrodes are formed on the one support arm. Thus, the sensor structure is electrically connected with a substrate through the only one support arm. According to the multilayer-structured bolometer and method of fabricating the bolometer, the thermal conductivity of the sensor structure is considerably reduced to remarkably improve sensitivity to temperature, and also the pixel size of the bolometer is reduced to obtain high-resolution thermal images. In addition, the multilayer-structured bolometer can have a high fill-factor due to a sufficiently large infrared-absorbing layer, and thus can improve infrared absorbance.
摘要翻译：提供一种多层结构的测辐射热计及其制造方法。在多层结构的测辐射热计中，支撑传感器结构的主体的支撑臂的数量减少到一个，并且在一个支撑臂上形成两个电极。因此，传感器结构通过仅一个支撑臂与基板电连接。根据多层结构的测辐射热计和制造测辐射热计的方法，传感器结构的导热性显着降低，显着提高了对温度的敏感性，还减小了测辐射热计的像素尺寸以获得高分辨率的热图像。此外，由于具有足够大的红外线吸收层，多层结构的测辐射热计可以具有高的填充因子，因此可以提高红外吸收。

3. 发明授权

US07884328B2 Microbolometer with improved mechanical stability and method of manufacturing the same 失效
标题翻译：具有改善机械稳定性的微热辐射计及其制造方法
公开(公告)号：US07884328B2
公开(公告)日：2011-02-08
申请号：US12181871
申请日：2008-07-29
申请人： Seong Mok Cho , Ho Jun Ryu , Woo Seok Yang , Sang Hoon Cheon , Byoung Gon Yu , Chang Auck Choi
发明人： Seong Mok Cho , Ho Jun Ryu , Woo Seok Yang , Sang Hoon Cheon , Byoung Gon Yu , Chang Auck Choi
IPC分类号： H01L27/14
CPC分类号： G01J5/20 , B81B3/007 , B81B2201/0207 , B81B2203/0118 , G01J5/02 , G01J5/023 , G01J5/024
摘要： Provided are a microbolometer having a cantilever structure and a method of manufacturing the same, and more particularly, a microbolometer having a three-dimensional cantilever structure, which is improved from a conventional two-dimensional cantilever structure, and a method of manufacturing the same. The method includes providing a substrate including a read-out integrated circuit and a reflective layer for forming an absorption structure, forming a sacrificial layer on the substrate, forming a cantilever structure having an uneven cross-section in the sacrificial layer, forming a sensor part isolated from the substrate by the cantilever structure, and removing the sacrificial layer.
摘要翻译：本发明提供一种具有悬臂结构的微电热计及其制造方法，特别是具有三维悬臂结构的微电热计，其从传统的二维悬臂结构得到改进，及其制造方法。该方法包括提供包括读出集成电路和用于形成吸收结构的反射层的衬底，在衬底上形成牺牲层，在牺牲层中形成具有不均匀横截面的悬臂结构，形成传感器部分通过悬臂结构从衬底隔离，并去除牺牲层。

4. 发明申请

US20090140148A1 BOLOMETER AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：测量仪及其制造方法
公开(公告)号：US20090140148A1
公开(公告)日：2009-06-04
申请号：US12181893
申请日：2008-07-29
申请人： Woo Seok Yang , Seong Mok Cho , Ho Jun Ryu , Sang Hoon Cheon , Byoung Gon Yu , Chang Auck Choi
发明人： Woo Seok Yang , Seong Mok Cho , Ho Jun Ryu , Sang Hoon Cheon , Byoung Gon Yu , Chang Auck Choi
IPC分类号： H01L27/14 , H01L21/00
CPC分类号： G01J5/20
摘要： A bolometer having decreased noise and increased temperature sensitivity and a method of manufacturing the same are provided. The bolometer has a resistive layer formed of single crystalline silicon (Si) or silicon germanium (Si1-xGex, x=0.2˜0.5) having high crystallinity, such that 1/f noise can be reduced and temperature sensitivity can be significantly improved compared to a conventional amorphous silicon bolometer.
摘要翻译：提供了具有降低的噪声和增加的温度敏感度的辐射热量计及其制造方法。测辐射热计具有由具有高结晶度的单晶硅（Si）或硅锗（Si1-xGex，x = 0.2〜0.5）形成的电阻层，使得1 / f噪声可以降低，并且与一种常规的非晶硅测辐射热计。

5. 发明申请

US20110159669A1 METHOD FOR DEPOSITING AMORPHOUS SILICON THIN FILM BY CHEMICAL VAPOR DEPOSITION 审中-公开
标题翻译：通过化学蒸气沉积沉积非晶硅薄膜的方法
公开(公告)号：US20110159669A1
公开(公告)日：2011-06-30
申请号：US13058047
申请日：2009-09-18
申请人： Woo Seok Yang , Seong mok Cho , Ho Jun Ryu , Sang Hoon Cheon , Byoung Gon Yu , Chang Auck Choi
发明人： Woo Seok Yang , Seong mok Cho , Ho Jun Ryu , Sang Hoon Cheon , Byoung Gon Yu , Chang Auck Choi
IPC分类号： H01L21/20
CPC分类号： C23C16/0227 , C23C16/24
摘要： Provided is a method of depositing an amorphous silicon thin film by chemical vapor deposition (CVD) to prevent bubble defect occurring when an amorphous silicon thin film is deposited on a substrate contaminated by air exposure. The deposition method includes cleaning a surface of the contaminated substrate with a reaction gas activated by plasma and depositing an amorphous silicon thin film on the cleaned substrate. Here, a vacuum state is maintained from the substrate cleaning step to the thin film deposition step in order to prevent contamination of the surface of the cleaned substrate by re-exposure to air.
摘要翻译：提供了一种通过化学气相沉积（CVD）沉积非晶硅薄膜的方法，以防止当非晶硅薄膜沉积在被空气暴露污染的基底上时发生气泡缺陷。沉积方法包括用等离子体激活的反应气体清洁污染的基底的表面，并在清洁的基底上沉积非晶硅薄膜。这里，从基板清洗步骤到薄膜沉积步骤保持真空状态，以便通过再次暴露于空气来防止清洁的基板表面的污染。

6. 发明申请

US20110042569A1 INFRARED DETECTION SENSOR AND METHOD OF FABRICATING THE SAME 失效
标题翻译：红外检测传感器及其制造方法
公开(公告)号：US20110042569A1
公开(公告)日：2011-02-24
申请号：US12648161
申请日：2009-12-28
申请人： Seong Mok CHO , Ho Jun Ryu , Woo Seok Yang , Sang Hoon Cheon , Chang Auck Choi
发明人： Seong Mok CHO , Ho Jun Ryu , Woo Seok Yang , Sang Hoon Cheon , Chang Auck Choi
IPC分类号： G01J5/00 , B44C1/22
CPC分类号： G01J5/20
摘要： In an infrared detection sensor according to the present invention, all material constituting an upper portion of a sensing electrode in a supporting arm region is removed so that a supporting arm has low thermal conductivity. As a result, thermal conductivity of the infrared sensor structure is reduced, and the infrared detection sensor has excellent sensitivity.
摘要翻译：在根据本发明的红外线检测传感器中，除去构成支撑臂区域中的感测电极的上部的所有材料，使得支撑臂具有低导热性。结果，红外线传感器结构的导热性降低，红外线检测传感器具有良好的灵敏度。

7. 发明申请

US20100155601A1 INFRARED SENSOR AND METHOD OF FABRICATING THE SAME 失效
标题翻译：红外传感器及其制造方法
公开(公告)号：US20100155601A1
公开(公告)日：2010-06-24
申请号：US12511251
申请日：2009-07-29
申请人： Seong Mok Cho , Ho Jun Ryu , Woo Seok Yang , Sang Hoon Cheon , Byoung Gon Yu , Chang Auck Choi
发明人： Seong Mok Cho , Ho Jun Ryu , Woo Seok Yang , Sang Hoon Cheon , Byoung Gon Yu , Chang Auck Choi
IPC分类号： H01L27/14 , B05D5/12 , H01L21/00
CPC分类号： G01J5/20 , G01J5/02 , G01J5/023 , G01J5/10 , H01L31/022408 , H01L31/108
摘要： An infrared sensor and a method of fabricating the same are provided. The sensor includes a substrate including a reflection layer and a plurality of pad electrodes, an interdigitated sensing electrode connected to the pad electrode and formed to be spaced apart from the reflection layer by a predetermined distance and a sensing layer formed on the sensing electrode and having an opening exposing a portion in which an interdigitated region of the sensing electrode connected to one pad region is separated from the sensing electrode connected to the other pad electrode. Therefore, the sensor has an electrode in a very simple constitution, and a sensing layer divided into rectangular blocks, so that current that non-uniformly flows into the electrode can be removed. Accordingly, the sensor in which current of the sensing layer can be uniformly flown, and noise is lowered can be implemented.
摘要翻译：提供了一种红外线传感器及其制造方法。该传感器包括：基板，包括反射层和多个焊盘电极;连接到焊盘电极并形成为与反射层隔开预定距离的叉指感测电极，以及形成在感测电极上的感测层，连接到一个焊盘区域的感测电极的交错区域与连接到另一个焊盘电极的感测电极分离的部分露出。因此，传感器具有非常简单的结构的电极和分为矩形块的感测层，从而可以去除不均匀地流入电极的电流。因此，可以实现感测层的电流可以均匀地流动并且噪声降低的传感器。

8. 发明申请

US20090146058A1 RESISTIVE MATERIALS FOR MICROBOLOMETER, METHOD FOR PREPARATION OF RESISTIVE MATERIALS AND MICROBOLOMETER CONTAINING THE RESISTIVE MATERIALS 失效
标题翻译：微电极用电阻材料，电阻材料的制备方法及含有电阻材料的微量元素
公开(公告)号：US20090146058A1
公开(公告)日：2009-06-11
申请号：US12182496
申请日：2008-07-30
申请人： Ho Jun RYU , Woo Seok Yang , Seong Mok Cho , Sang Hoon Cheon , Byoung Gon Yu , Chang Auck Choi
发明人： Ho Jun RYU , Woo Seok Yang , Seong Mok Cho , Sang Hoon Cheon , Byoung Gon Yu , Chang Auck Choi
IPC分类号： G01J5/10 , C01B33/06
CPC分类号： G01J5/20 , C22C1/04 , C23C14/14 , C23C14/3464
摘要： Provided are resistive materials for a microbolometer, a method for preparation of resistive materials and a microbolometer containing the resistive materials. The resistive materials for the microbolometer include an alloy of silicon and antimony or an alloy of silicon, antimony and germanium, which has a high TCR and a low resistance.
摘要翻译：提供了用于微电热计的电阻材料，用于制备电阻材料的方法和包含电阻材料的微电热计。用于微热辐射计的电阻材料包括硅和锑的合金或硅，锑和锗的合金，其具有高TCR和低电阻。

9. 发明授权

US07928388B2 Infrared detection sensor and method of fabricating the same 失效
标题翻译：红外线检测传感器及其制造方法
公开(公告)号：US07928388B2
公开(公告)日：2011-04-19
申请号：US12648161
申请日：2009-12-28
申请人： Seong Mok Cho , Ho Jun Ryu , Woo Seok Yang , Sang Hoon Cheon , Chang Auck Choi
发明人： Seong Mok Cho , Ho Jun Ryu , Woo Seok Yang , Sang Hoon Cheon , Chang Auck Choi
IPC分类号： G01J5/00
CPC分类号： G01J5/20
摘要： In an infrared detection sensor according to the present invention, all material constituting an upper portion of a sensing electrode in a supporting arm region is removed so that a supporting arm has low thermal conductivity. As a result, thermal conductivity of the infrared sensor structure is reduced, and the infrared detection sensor has excellent sensitivity.
摘要翻译：在根据本发明的红外线检测传感器中，除去构成支撑臂区域中的感测电极的上部的所有材料，使得支撑臂具有低导热性。结果，红外线传感器结构的导热性降低，红外线检测传感器具有良好的灵敏度。

10. 发明申请

US20110049366A1 RESISTIVE MATERIAL FOR BOLOMETER, BOLOMETER FOR INFRARED DETECTOR USING THE MATERIAL, AND METHOD OF MANUFACTURING THE BOLOMETER 有权
标题翻译：用于使用该材料的红外探测器的玻璃体，BOLOMETER的电阻材料及其制造方法
公开(公告)号：US20110049366A1
公开(公告)日：2011-03-03
申请号：US12859466
申请日：2010-08-19
申请人： Woo Seok Yang , Sang Hoon Cheon , Seong Mok Cho , Ho Jun Ryu , Chang Auck Choi
发明人： Woo Seok Yang , Sang Hoon Cheon , Seong Mok Cho , Ho Jun Ryu , Chang Auck Choi
IPC分类号： H01L31/09 , H01L31/18 , C09K3/00
CPC分类号： G01J5/04 , G01J5/046
摘要： A resistive material for a bolometer, a bolometer for an infrared detector using the material, and a method of manufacturing the bolometer are provided. In the resistive material, at least one element selected from the group consisting of nitrogen (N), oxygen (O) and germanium (Ge) is included in antimony (Sb). The resistive material has superior properties such as high temperature coefficient of resistance (TCR), low resistivity, a low noise constant, and is easily formed in a thin film structure by sputtering typically used in a complementary metal-oxide semiconductor (CMOS) process, so that it can be used as a resistor for the bolometer for an uncooled infrared detector, and thus provide the infrared detector with superior temperature precision.
摘要翻译：提供了用于测辐射热力计的电阻材料，用于使用该材料的红外探测器的测辐射热计，以及制造测辐射热计的方法。在电阻材料中，选自氮（N），氧（O）和锗（Ge）中的至少一种元素包括在锑（Sb）中。电阻材料具有优异的性能，例如高温电阻系数（TCR），低电阻率，低噪声常数，并且易于通过通常用于互补金属氧化物半导体（CMOS）工艺中的溅射在薄膜结构中形成，因此它可以用作非制冷红外探测器的辐射热计的电阻器，从而为红外检测器提供出色的温度精度。

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