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1. 发明授权

US08261540B2 Particulate matter sensor and exhaust gas purification apparatus 有权
标题翻译：颗粒物传感器和废气净化装置
公开(公告)号：US08261540B2
公开(公告)日：2012-09-11
申请号：US12788253
申请日：2010-05-26
申请人： Athanasios G. Konstandopoulos , Fumishige Miyata , Senji Hamanaka , Takashi Yamakawa , Makoto Konno
发明人： Athanasios G. Konstandopoulos , Fumishige Miyata , Senji Hamanaka , Takashi Yamakawa , Makoto Konno
IPC分类号： F01N3/031
CPC分类号： G01N15/0618 , F01N3/021 , F01N11/002 , F01N2550/04 , F01N2560/05 , F01N2900/0416 , Y02T10/20 , Y02T10/47
摘要： A particulate matter sensor includes a first detection filter provided in an exhaust gas flow passage and capable of collecting particle matter. A second detection filter is provided on a downstream side of the first detection filter in the exhaust gas flow passage and capable of collecting the particle matter. A first differential pressure detection unit is configured to detect a first differential pressure between pressures of an upstream side and the downstream side of the first detection filter. A second differential pressure detection unit is configured to detect a second differential pressure between pressures of an upstream side and a downstream side of the second detection filter. A particle matter amount detection unit is configured to detect an amount of particle matter based on a detection result of the first differential pressure detection unit and a detection result of the second differential pressure detection unit.
摘要翻译：颗粒物质传感器包括设置在废气流动通道中并能够收集颗粒物质的第一检测过滤器。第二检测过滤器设置在废气流通道中的第一检测过滤器的下游侧，并且能够收集颗粒物质。第一差压检测单元被配置为检测第一检测滤波器的上游侧和下游侧的压力之间的第一差压。第二差压检测单元被配置为检测第二检测过滤器的上游侧和下游侧的压力之间的第二差压。粒子物质量检测单元被配置为基于第一差压检测单元的检测结果和第二差压检测单元的检测结果来检测颗粒物质的量。

2. 发明申请

US20110072789A1 PARTICULATE MATTER SENSOR AND EXHAUST GAS PURIFICATION APPARATUS 有权
标题翻译：颗粒物传感器和排气净化装置
公开(公告)号：US20110072789A1
公开(公告)日：2011-03-31
申请号：US12788253
申请日：2010-05-26
申请人： Athanasios G. KONSTANDOPOULOS , Fumishige Miyata , Senji Hamanaka , Takashi Yamakawa , Makoto Konno
发明人： Athanasios G. KONSTANDOPOULOS , Fumishige Miyata , Senji Hamanaka , Takashi Yamakawa , Makoto Konno
IPC分类号： F01N3/00 , F01N3/10 , F01N3/02 , F01N11/00 , G01M15/10
CPC分类号： G01N15/0618 , F01N3/021 , F01N11/002 , F01N2550/04 , F01N2560/05 , F01N2900/0416 , Y02T10/20 , Y02T10/47
摘要： A particulate matter sensor includes a first detection filter provided in an exhaust gas flow passage and capable of collecting particle matter. A second detection filter is provided on a downstream side of the first detection filter in the exhaust gas flow passage and capable of collecting the particle matter. A first differential pressure detection unit is configured to detect a first differential pressure between pressures of an upstream side and the downstream side of the first detection filter. A second differential pressure detection unit is configured to detect a second differential pressure between pressures of an upstream side and a downstream side of the second detection filter. A particle matter amount detection unit is configured to detect an amount of particle matter based on a detection result of the first differential pressure detection unit and a detection result of the second differential pressure detection unit.
摘要翻译：颗粒物质传感器包括设置在废气流动通道中并能够收集颗粒物质的第一检测过滤器。第二检测过滤器设置在废气流通道中的第一检测过滤器的下游侧，并且能够收集颗粒物质。第一差压检测单元被配置为检测第一检测滤波器的上游侧和下游侧的压力之间的第一差压。第二差压检测单元被配置为检测第二检测过滤器的上游侧和下游侧的压力之间的第二差压。粒子物质量检测单元被配置为基于第一差压检测单元的检测结果和第二差压检测单元的检测结果来检测颗粒物质的量。

3. 发明申请

US20110018077A1 SEMICONDUCTOR PRESSURE SENSOR AND ITS MANUFACTURING METHOD 审中-公开
标题翻译：半导体压力传感器及其制造方法
公开(公告)号：US20110018077A1
公开(公告)日：2011-01-27
申请号：US12762392
申请日：2010-04-19
申请人： Fumishige MIYATA , Shinji INAGAKI , Senji HAMANAKA
发明人： Fumishige MIYATA , Shinji INAGAKI , Senji HAMANAKA
IPC分类号： H01L29/84 , H01L21/302
CPC分类号： G01L9/0042 , G01L9/0054
摘要： A semiconductor pressure sensor includes a single crystal silicon substrate, a diaphragm, four diaphragm side walls enclosing the diaphragm, and a bridge circuit. The diaphragm is formed in the silicon substrate by etching the silicon substrate from a lower surface side of the silicon substrate. The diaphragm has a (110) plane orientation and a substantially parallelogram shape. The four diaphragm side walls have a (111) plane orientation and form two pairs of substantially parallel and opposite surfaces. The bridge circuit is formed on an upper surface of the silicon substrate. The bridge circuit includes a lead conductor and a strain gauge resistor. The bridge circuit is configured to detect pressure applied to the pressure sensor based on a change in an output value of the bridge circuit corresponding to an amount of flexure produced in the diaphragm by the pressure.
摘要翻译：半导体压力传感器包括单晶硅衬底，隔膜，围绕隔膜的四个隔膜侧壁和桥接电路。通过从硅衬底的下表面侧蚀刻硅衬底，在硅衬底中形成隔膜。隔膜具有（110）平面取向和基本上平行四边形的形状。四个隔膜侧壁具有（111）面取向并且形成两对基本平行和相对的表面。桥电路形成在硅衬底的上表面上。桥接电路包括引线导体和应变计电阻。桥电路被配置为基于桥式电路的输出值的变化来检测施加到压力传感器的压力，该变化对应于通过压力在隔膜中产生的挠曲量。

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