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    • 4. 发明申请
    • SEMICONDUCTOR PRESSURE SENSOR AND ITS MANUFACTURING METHOD
    • 半导体压力传感器及其制造方法
    • US20110018077A1
    • 2011-01-27
    • US12762392
    • 2010-04-19
    • Fumishige MIYATAShinji INAGAKISenji HAMANAKA
    • Fumishige MIYATAShinji INAGAKISenji HAMANAKA
    • H01L29/84H01L21/302
    • G01L9/0042G01L9/0054
    • A semiconductor pressure sensor includes a single crystal silicon substrate, a diaphragm, four diaphragm side walls enclosing the diaphragm, and a bridge circuit. The diaphragm is formed in the silicon substrate by etching the silicon substrate from a lower surface side of the silicon substrate. The diaphragm has a (110) plane orientation and a substantially parallelogram shape. The four diaphragm side walls have a (111) plane orientation and form two pairs of substantially parallel and opposite surfaces. The bridge circuit is formed on an upper surface of the silicon substrate. The bridge circuit includes a lead conductor and a strain gauge resistor. The bridge circuit is configured to detect pressure applied to the pressure sensor based on a change in an output value of the bridge circuit corresponding to an amount of flexure produced in the diaphragm by the pressure.
    • 半导体压力传感器包括单晶硅衬底,隔膜,围绕隔膜的四个隔膜侧壁和桥接电路。 通过从硅衬底的下表面侧蚀刻硅衬底,在硅衬底中形成隔膜。 隔膜具有(110)平面取向和基本上平行四边形的形状。 四个隔膜侧壁具有(111)面取向并且形成两对基本平行和相对的表面。 桥电路形成在硅衬底的上表面上。 桥接电路包括引线导体和应变计电阻。 桥电路被配置为基于桥式电路的输出值的变化来检测施加到压力传感器的压力,该变化对应于通过压力在隔膜中产生的挠曲量。
    • 7. 发明授权
    • Ceramic heater
    • 陶瓷加热器
    • US06218648B1
    • 2001-04-17
    • US09537184
    • 2000-03-29
    • Fumishige MiyataTatsuya KoyamaSeiko Okuda
    • Fumishige MiyataTatsuya KoyamaSeiko Okuda
    • H05B310
    • H05B3/141
    • A ceramic heater which comprises an insulation sheet comprising 88 to 95 weight % of Al2O3 supplemented with, as sintering aids, 3 to 10 weight % of SiO2, 0.4 to 1.0 weight % of MgO and 1.0 to 2.5 weight % of CaO, a core covered with the insulation sheet, a resistance heating element of high-melting metal as interposed between the insulation sheet and core, and an intermediate layer of an alumina ceramic body having a thickness of 5 to 50 &mgr;m, the alumina ceramic body containing 0.05 to 4 weight % of SiO2, 0.01 to 0.5 weight % of MgO and 0.01 to 1.2 weight % of CaO as interposed between at least a part of the resistance heating element and the core.
    • 一种陶瓷加热器,其包含88-95重量%的Al 2 O 3,其补充有作为烧结助剂的3至10重量%的SiO 2,0.4至1.0重量%的MgO和1.0至2.5重量%的CaO,核覆盖 绝缘片,介于绝缘片和芯之间的高熔点金属的电阻加热元件和厚度为5-50μm的氧化铝陶瓷体的中间层,氧化铝陶瓷体含有0.05至4重量%的 SiO 2,0.01〜0.5重量%的MgO和0.01〜1.2重量%的CaO,介于电阻加热元件的至少一部分和芯之间。