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1. 发明申请

US20100044731A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20100044731A1
公开(公告)日：2010-02-25
申请号：US12441247
申请日：2008-01-14
申请人： Seiichi Tokunaga , Kunio Takeuchi
发明人： Seiichi Tokunaga , Kunio Takeuchi
IPC分类号： H01L33/00
CPC分类号： H01L33/56 , H01L2224/48091 , H01L2224/48247 , H01L2933/0091 , H01L2924/00014
摘要： Such a semiconductor light-emitting device (10, 30, 40) that emitted light has small directivity of light intensity and a color tone and a light output is hardly reduced is obtained. This semiconductor light-emitting device includes a semiconductor light-emitting element (1, 31) and a thin-film light diffusion portion (8, 8a, 38, 41) arranged on a light-emitting direction side of the semiconductor light-emitting element.
摘要翻译：这种发出光的半导体发光装置（10,30,40）的光强度方向性较小，色调不足，光输出难以降低。该半导体发光元件具备配置在半导体发光元件的发光方向侧的半导体发光元件（1,31）和薄膜光扩散部（8,8a，38,41）。

2. 发明申请

US20090323750A1 SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME AS WELL AS OPTICAL PICKUP 审中-公开
标题翻译：半导体激光器件及其制造方法如同OPTICI PICKUP
公开(公告)号：US20090323750A1
公开(公告)日：2009-12-31
申请号：US12492808
申请日：2009-06-26
申请人： Daijiro Inoue , Kiyoshi Oota , Yoshiki Murayama , Ryoji Hiroyama , Hiroki Ohbo , Seiichi Tokunaga
发明人： Daijiro Inoue , Kiyoshi Oota , Yoshiki Murayama , Ryoji Hiroyama , Hiroki Ohbo , Seiichi Tokunaga
IPC分类号： H01S5/00 , H01L21/00 , H01S5/028
CPC分类号： B82Y20/00 , H01S5/0202 , H01S5/02212 , H01S5/024 , H01S5/02461 , H01S5/0421 , H01S5/0425 , H01S5/16 , H01S5/22 , H01S5/2214 , H01S5/222 , H01S5/2231 , H01S5/34333 , H01S2301/173 , H01S2304/04
摘要： A semiconductor laser device includes a semiconductor device layer having an emission layer and formed with a current path on a semiconductor layer in the vicinity of the emission layer, a current blocking layer formed in the vicinity of the current path, and a heat-radiation layer formed to be provided at least in the vicinity of a region formed with a cavity facet of the semiconductor device layer and be located above the current path, and having thermal conductivity larger than that of the current blocking layer.
摘要翻译：半导体激光装置包括具有发光层并在发光层附近的半导体层上形成有电流路径的半导体器件层，形成在电流路径附近的电流阻挡层，以及散热层形成为至少设置在形成有半导体器件层的空腔面的区域附近，并且位于电流路径上方，并且具有比当前阻挡层的导热性更大的导热性。

3. 发明申请

US20070064751A1 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US20070064751A1
公开(公告)日：2007-03-22
申请号：US11524259
申请日：2006-09-21
申请人： Seiichi Tokunaga
发明人： Seiichi Tokunaga
IPC分类号： H01S3/10
CPC分类号： H01L33/504 , H01L33/44
摘要： A light emitting device includes a light emitting element which emits light with a first wavelength; and a light emitting conversion unit for converting the light with the first wavelength by using wavelength conversion materials including a short wavelength conversion material and a long wavelength conversion material, the short wavelength conversion material being that which emits light with a second wavelength longer in wavelength than the light with the first wavelength, by absorbing the light with the first wavelength, and the long wavelength conversion material being that which emits light with a wavelength longer than the second wavelength by absorbing the light with the first wavelength. A proportion of the short wavelength conversion material of the wavelength conversion materials included in a first region is smaller than that of the short wavelength conversion material of the wavelength conversion materials included in the entire light emitting conversion unit, and a proportion of the short wavelength conversion material of the wavelength conversion materials included in a second region is larger than that of the short wavelength conversion material of the wavelength conversion materials included in the entire light emitting conversion unit.
摘要翻译：发光器件包括发射具有第一波长的光的发光元件; 以及用于通过使用包括短波长转换材料和长波长转换材料的波长转换材料来转换具有第一波长的光的发光转换单元，所述短波长转换材料是发射波长比第二波长长的波长的波长的光具有第一波长的光，通过吸收具有第一波长的光，并且长波长转换材料是通过吸收具有第一波长的光而发射波长比第二波长长的光的光。包括在第一区域中的波长转换材料的短波长转换材料的比例小于包括在整个发光转换单元中的波长转换材料的短波长转换材料的比例，并且短波长转换的比例包括在第二区域中的波长转换材料的材料大于包含在整个发光转换单元中的波长转换材料的短波长转换材料的材料。

4. 发明申请

US20060220531A1 Semiconductor light emitting apparatus 审中-公开
标题翻译：半导体发光装置
公开(公告)号：US20060220531A1
公开(公告)日：2006-10-05
申请号：US11389029
申请日：2006-03-27
申请人： Seiichi Tokunaga , Takeshi Sano , Kunimoto Ninomiya
发明人： Seiichi Tokunaga , Takeshi Sano , Kunimoto Ninomiya
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： C09K11/06 , C09K11/08 , C09K2211/1416 , C09K2211/1433 , H01L33/504 , H05B33/14
摘要： A semiconductor light emitting apparatus includes a packaging member, a light-emitting element mounted in the packaging member and a wavelength changer. The wavelength changer which absorbs the light from the light-emitting element and emits a wavelength-converted light. The wavelength changer includes inorganic fluorescent material and organic fluorescent material.
摘要翻译：半导体发光装置包括封装构件，安装在封装构件中的发光元件和波长变换器。该波长变换器吸收来自发光元件的光并发射波长转换的光。波长变换器包括无机荧光材料和有机荧光材料。

5. 发明授权

US5873985A Process of making squid device having tilt-boundary junction 失效
标题翻译：制造具有倾斜边界结的鱿鱼装置的过程
公开(公告)号：US5873985A
公开(公告)日：1999-02-23
申请号：US36148
申请日：1993-03-24
申请人： Seiichi Tokunaga , Ryokan Yuasa , Shuji Fujiwara , Masao Nakao , Hiroaki Furukawa
发明人： Seiichi Tokunaga , Ryokan Yuasa , Shuji Fujiwara , Masao Nakao , Hiroaki Furukawa
IPC分类号： C23C14/00 , C23C14/08 , C30B23/02 , H01L39/24 , C23C14/34
CPC分类号： H01L39/2496 , C23C14/0026 , C23C14/087 , C30B23/02 , C30B29/22 , C30B29/225 , Y10S505/702
摘要： An oxide film having a desired pattern is first formed on a magnesia substrate. A superconducting oxide film is then formed on the exposed portion of the magnesia substrate and also on the oxide film. Thus, a tilt-boundary junction is formed in the boundary between the superconducting oxide film portion on the magnesia substrate and the superconducting oxide film portion on the oxide film. The tilt-boundary junction functions as a Josephson junction. By utilizing the Josephson junction in the tilt-boundary junction, a SQUID pattern can be formed on the magnesia substrate to provide a SQUID device.
摘要翻译：首先在氧化镁基板上形成具有所需图案的氧化膜。然后在氧化镁基板的暴露部分上以及氧化物膜上形成超导氧化物膜。因此，在氧化镁基板上的超导氧化物膜部分和氧化膜上的超导氧化物膜部分之间的边界中形成倾斜边界结。倾斜边界连接起约瑟夫逊结的作用。通过在倾斜边界结中利用约瑟夫逊结，可以在氧化镁衬底上形成SQUID图案以提供SQUID器件。

6. 发明申请

US20120033695A1 SEMICONDUCTOR LASER APPARATUS AND OPTICAL APPARATUS 审中-公开
标题翻译：半导体激光装置和光学装置
公开(公告)号：US20120033695A1
公开(公告)日：2012-02-09
申请号：US13191683
申请日：2011-07-27
申请人： Nobuhiko HAYASHI , Hideki YOSHIKAWA , Keiichi KURAMOTO , Takenori GOTO , Yoshio OKAYAMA , Seiichi TOKUNAGA
发明人： Nobuhiko HAYASHI , Hideki YOSHIKAWA , Keiichi KURAMOTO , Takenori GOTO , Yoshio OKAYAMA , Seiichi TOKUNAGA
IPC分类号： H01S5/022
CPC分类号： H01S5/02204 , H01L2224/48091 , H01L2224/48247 , H01S5/02212 , H01S5/02216 , H01S5/02244 , H01S5/02296 , H01S5/0683 , H01S5/32341 , H01L2924/00014
摘要： This semiconductor laser apparatus includes a package constituted by a plurality of members, having sealed space inside and a semiconductor laser chip arranged in the sealed space, while surfaces of the members located in the sealed space are covered with a covering agent made of an ethylene-polyvinyl alcohol copolymer.
摘要翻译：该半导体激光装置包括由内部具有密封空间的多个构件和布置在密封空间中的半导体激光器芯片构成的封装，同时位于密封空间中的构件的表面被覆盖有由乙烯 - 聚乙烯醇共聚物。

7. 发明申请

US20110280266A1 SEMICONDUCTOR LASER APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR LASER APPARATUS AND OPTICAL APPARATUS 审中-公开
标题翻译：半导体激光装置，制造半导体激光装置和光学装置的方法
公开(公告)号：US20110280266A1
公开(公告)日：2011-11-17
申请号：US13106123
申请日：2011-05-12
申请人： Nobuhiko HAYASHI , Hideki YOSHIKAWA , Keiichi KURAMOTO , Yasuhiko NOMURA , Takenori GOTO , Yoshio OKAYAMA , Seiichi TOKUNAGA
发明人： Nobuhiko HAYASHI , Hideki YOSHIKAWA , Keiichi KURAMOTO , Yasuhiko NOMURA , Takenori GOTO , Yoshio OKAYAMA , Seiichi TOKUNAGA
IPC分类号： H01S5/022 , H01L21/52
CPC分类号： H01S5/02216 , H01L2224/48091 , H01L2224/49107 , H01L2224/73265 , H01L2924/16195 , H01S5/02212 , H01S5/0222 , H01S5/02228 , H01S5/02244 , H01S5/02292 , H01S5/02296 , H01S5/02469 , H01S5/0683 , H01L2924/00014
摘要： This semiconductor laser apparatus includes a semiconductor laser chip and a package sealing the semiconductor laser chip. The package has a base portion mounted with the semiconductor laser chip, a sealing member and a window member. The semiconductor laser chip is sealed with the base portion, the sealing member and the window member. At least two of the base portion, the sealing member and the window member are bonded to each other through a sealant made of an ethylene-polyvinyl alcohol copolymer.
摘要翻译：该半导体激光装置包括半导体激光芯片和密封半导体激光芯片的封装。封装具有安装有半导体激光芯片的基座部分，密封构件和窗构件。半导体激光芯片由基部，密封部件和窗部件密封。基部，密封构件和窗构件中的至少两个通过由乙烯 - 聚乙烯醇共聚物制成的密封剂彼此接合。

8. 发明授权

US07822087B2 Semiconductor laser device and method of manufacturing the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US07822087B2
公开(公告)日：2010-10-26
申请号：US12058729
申请日：2008-03-30
申请人： Masayuki Hata , Kunio Takeuchi , Seiichi Tokunaga
发明人： Masayuki Hata , Kunio Takeuchi , Seiichi Tokunaga
IPC分类号： H01S3/04
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0201 , H01S5/0202 , H01S5/0213 , H01S5/0216 , H01S5/0217 , H01S5/0425 , H01S5/2009 , H01S5/22 , H01S5/2216 , H01S5/305 , H01S5/3054 , H01S5/3063 , H01S2304/04 , H01S2304/12
摘要： A semiconductor laser device capable of improving planarity of cleavage planes of an optical waveguide thereof is obtained. This semiconductor laser device includes a support substrate, a semiconductor laser element portion having a pair of cavity facets provided with ends of an optical waveguide extending in a first direction and a bonding layer bonding the support substrate and the semiconductor laser element portion to each other, while the bonding layer has void portions formed on regions close to at least the ends of the optical waveguide in the vicinity of the cavity facets.
摘要翻译：可以获得能够提高其光波导的解理面平坦度的半导体激光器件。该半导体激光装置包括：支撑基板，具有设置在第一方向上延伸的光波导的端部的一对腔面的半导体激光元件部和将支撑基板和半导体激光元件部彼此接合的接合层，而接合层在空腔面附近形成在靠近光波导端的至少端部的区域上的空隙部分。

9. 发明申请

US20090262771A1 SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20090262771A1
公开(公告)日：2009-10-22
申请号：US12090334
申请日：2007-07-31
申请人： Daijiro Inoue , Yasuyuki Bessho , Masayuki Hata , Yasuhiko Nomura , Seiichi Tokunaga
发明人： Daijiro Inoue , Yasuyuki Bessho , Masayuki Hata , Yasuhiko Nomura , Seiichi Tokunaga
IPC分类号： H01S5/026 , H01L21/00
CPC分类号： H01S5/0425 , B82Y20/00 , H01S5/0202 , H01S5/0207 , H01S5/22 , H01S5/2201 , H01S5/2214 , H01S5/34333 , H01S2304/04
摘要： A semiconductor laser device capable of suppressing damage of a waveguide is obtained. This GaN-based semiconductor laser chip (semiconductor laser device) includes an n-type GaN substrate of a nitride-based semiconductor and a semiconductor layer of a nitride-based semiconductor formed on the n-type GaN substrate and provided with a ridge portion constituting a waveguide extending in a direction F. The ridge portion (waveguide) is formed on a region approaching a first side from the center of the semiconductor layer. On a region opposite to the first side of the ridge portion (waveguide), a cleavage introduction step is formed from the side of the semiconductor layer, to extend in a direction intersecting with the extensional direction F of the ridge portion (waveguide).
摘要翻译：可以获得能够抑制波导损伤的半导体激光装置。这种GaN基半导体激光器芯片（半导体激光器件）包括氮化物基半导体的n型GaN衬底和形成在n型GaN衬底上的氮化物基半导体的半导体层，并且具有构成沿方向F延伸的波导。脊部（波导）形成在从半导体层的中心接近第一侧的区域上。在与脊部（波导）的第一侧相对的区域上，从半导体层的侧面开始，在与脊部（波导管）的延伸方向F相交的方向上延伸。

10. 发明申请

US20080079351A1 LIGHT EMITTING APPARATUS 审中-公开
标题翻译：发光装置
公开(公告)号：US20080079351A1
公开(公告)日：2008-04-03
申请号：US11862707
申请日：2007-09-27
申请人： Seiichi TOKUNAGA , Yasuhiko Nomura
发明人： Seiichi TOKUNAGA , Yasuhiko Nomura
IPC分类号： H01J1/62
CPC分类号： H01L33/504 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： A fluorescent substance containing resin fills a container in a light emitting apparatus so as to cover a light emitting device and a spacer. In a region where the power of light emitted from the light emitting device is high, the volume of the first fluorescent element containing a blue light emitting fluorescent material is large. In a region where the power of the emitted light is low, the volume of a second fluorescent element containing a green light emitting fluorescent material and a red light emitting fluorescent material is large.
摘要翻译：含荧光物质的树脂填充发光装置中的容器以覆盖发光装置和间隔物。在从发光器件发射的光的功率高的区域中，含有蓝色发光荧光材料的第一荧光元件的体积大。在发射光的功率低的区域中，包含绿色发光荧光材料和红色发光荧光材料的第二荧光元件的体积大。

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