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    • 1. 发明授权
    • Strobe-offset control circuit
    • 频闪偏移控制电路
    • US09111608B2
    • 2015-08-18
    • US14230558
    • 2014-03-31
    • Scott C. Best
    • Scott C. Best
    • G11C7/22G11C7/10G06F13/16
    • G11C11/4076G06F13/1689G11C7/04G11C7/222
    • A method of operation in a memory controller is disclosed. The method includes receiving a strobe signal having a first phase relationship with respect to first data propagating on a first data line, and a second phase relationship with respect to second data propagating on a second data line. A first sample signal is generated based on the first phase relationship and a second sample signal is generated based on the second phase relationship. The first data signal is received using a first receiver clocked by the first sample signal. The second data signal is received using a second receiver clocked by the second sample signal.
    • 公开了一种在存储器控制器中的操作方法。 该方法包括:接收相对于在第一数据线上传播的第一数据具有第一相位关系的选通信号,以及相对于在第二数据线上传播的第二数据的第二相位关系。 基于第一相位关系产生第一采样信号,并且基于第二相位关系生成第二采样信号。 使用由第一采样信号计时的第一接收机接收第一数据信号。 使用由第二采样信号计时的第二接收机接收第二数据信号。
    • 2. 发明授权
    • Regulation of memory IO timing using programmatic control over memory device IO timing
    • 通过对存储器设备IO时序的编程控制来调节存储器IO时序
    • US08930740B2
    • 2015-01-06
    • US12947758
    • 2010-11-16
    • Jared L. ZerbeScott C. BestBrian L. Leibowitz
    • Jared L. ZerbeScott C. BestBrian L. Leibowitz
    • G06F1/00G06F1/08G06F13/16G06F1/32
    • G06F1/08G06F1/32G06F13/1689
    • This disclosure provides for adjustment of memory IO timing using a voltage controlled oscillator (VCO) and a register that generates a VCO control voltage directly used to vary memory IO timing. The register may be externally programmable by a controller and may be located on a memory device (IC, module or other device) or on an external voltage generator, which then provides an adjustable voltage to the memory device. This structure may be used to adjust memory timing so as to achieve a minimum target bitrate and thus minimize frequency of operation to minimize power. In one embodiment, each of several memory devices may be independently adjusted in this way to achieve a mesochronous memory system; in another embodiment, memory devices may be have their timing adjusted in parallel, with all memory devices equal to or greater than a target bitrate. Teachings presented herein provide a way to relax overdesign requirements and “tune” fast-fast and slow-slow devices to effectively operate as typical devices.
    • 本公开提供了使用压控振荡器(VCO)和产生直接用于改变存储器IO定时的VCO控制电压的寄存器来调整存储器IO定时。 寄存器可以由控制器在外部进行编程,并且可以位于存储器件(IC,模块或其他器件)或外部电压发生器上,然后外部电压发生器为存储器件提供可调电压。 该结构可以用于调整存储器定时,以便实现最小目标比特率,从而最小化操作频率以最小化功率。 在一个实施例中,可以以这种方式独立地调整多个存储器件中的每一个以实现间同步存储器系统; 在另一个实施例中,存储器设备可以具有并行调整其定时,所有存储器设备等于或大于目标比特率。 本文提供的教学提供了一种放松超设计要求并“调谐”快速和慢速设备以有效地作为典型设备运行的方法。
    • 6. 发明授权
    • Selective switching of a memory bus
    • 选择性切换内存总线
    • US08135890B2
    • 2012-03-13
    • US12428114
    • 2009-04-22
    • Steven C. WooScott C. Best
    • Steven C. WooScott C. Best
    • G06F13/00
    • E04B2/58E04B1/24E04C2/423G06F13/4243
    • In a system, a memory bus has a first bus segment coupled to a memory controller that includes control logic and a first memory device, a second bus segment coupled to a second memory device, and a switch to selectively couple and decouple the first bus segment and the second bus segment in response to control information from the control logic. Note that the control logic may output control information to the switch to selectively decouple the first bus segment and the second bus segment to effect a change in an electrical length of the memory bus to enable data transfer with respect to the first memory device at a first data rate. Additionally, the control logic may output control information to the switch to selectively couple the first bus segment and the second bus segment to effect another change in the electrical length of the memory bus to enable data transfer with respect to the second memory device at a second data rate that is slower than the first data rate.
    • 在系统中,存储器总线具有耦合到存储器控制器的第一总线段,存储器控制器包括控制逻辑和第一存储器件,耦合到第二存储器件的第二总线段以及用于选择性地耦合和去耦合第一总线段 以及响应于来自控制逻辑的控制信息的第二总线段。 注意,控制逻辑可以将控制信息输出到开关以选择性地去耦合第一总线段和第二总线段以实现存储器总线的电长度的改变,以使得能够在第一存储器装置相对于第一存储器件进行数据传送 数据速率。 另外,控制逻辑可以将控制信息输出到开关以选择性地耦合第一总线段和第二总线段,以实现存储器总线的电长度的另一变化,以使得能够在第二存储器装置相对于第二存储器件进行数据传送 数据速率比第一个数据速率慢。
    • 7. 发明授权
    • Communication channel calibration with nonvolatile parameter store for recovery
    • 通信通道校准与非易失性参数存储进行恢复
    • US07978754B2
    • 2011-07-12
    • US10857483
    • 2004-05-28
    • Philip YeungRichard E PeregoScott C Best
    • Philip YeungRichard E PeregoScott C Best
    • H04B3/46
    • G11C7/20G11C29/02G11C29/022G11C29/028G11C2029/4402H04L5/1438H04L7/0004H04L7/0091H04L7/10H04L25/49
    • A communication channel is operated by storing a calibrated parameter value in nonvolatile memory during manufacturing, testing, or during a first operation of the device. Upon starting operation of the communication channel in the field, the calibrated parameter value is obtained from the nonvolatile memory, and used in applying an operating parameter of the communication channel. After applying the operating parameter, communication is initiated on a communication channel. The operating parameter can be adjusted to account for drift immediately after starting up, or periodically. The process of starting operation in the field includes power up events after a power management operation. In embodiments where one component includes memory, steps can be taken prior to a power management operation using the communication channel, such as transferring calibration patterns to be used in calibration procedures.
    • 在制造,测试期间或在设备的第一次操作期间,将经校准的参数值存储在非易失性存储器中来操作通信通道。 在现场通信通道开始运行时,从非易失性存储器获得校准参数值,并用于应用通信信道的操作参数。 应用操作参数后,在通信通道上启动通信。 操作参数可以在启动后立即进行调整,或者定期进行。 在现场开始运行的过程包括电源管理操作后的上电事件。 在一个组件包括存储器的实施例中,可以在使用通信信道进行功率管理操作之前采取步骤,例如传送校正过程中使用的校准模式。
    • 9. 发明授权
    • Integrated circuit input/output interface with empirically determined delay matching
    • 具有经验确定的延迟匹配的集成电路输入/输出接口
    • US07398333B2
    • 2008-07-08
    • US10899719
    • 2004-07-21
    • Craig E. HampelScott C. Best
    • Craig E. HampelScott C. Best
    • G06K9/36G06F1/04H04L7/02
    • H05K1/0248H05K1/0216H05K1/0268H05K2201/09781H05K2201/10689
    • An integrated circuit input/output interface with empirically determined delay matching is disclosed. In one embodiment, the integrated circuit input/output interface uses empirical information of the signal traces to adjust the transmit/receive clock of each pin of the interface so as to compensate for delay mismatches caused by differences in signal trace lengths. The empirical information, in one embodiment, includes signal flight time of each signal trace, which can be pre-measured or pre-calculated from known signal trace lengths. The empirical information, in another embodiment, includes trace-specific phase offset values calculated from pre-calculated or pre-measured signal flight times or signal trace lengths. In yet another embodiment, a transmitting device generates a set of serially delayed write clocks, which are used to control symbol transmission over signal traces so as to reduce simultaneous switching output noise and ground bound in the transmitting device.
    • 公开了具有经验确定的延迟匹配的集成电路输入/输出接口。 在一个实施例中,集成电路输入/输出接口使用信号迹线的经验信息来调整接口的每个引脚的发送/接收时钟,以补偿由信号迹线长度差引起的延迟失配。 在一个实施例中,经验信息包括每个信号迹线的信号飞行时间,其可以从已知信号迹线长度预先测量或预先计算。 在另一个实施例中,经验信息包括从预先计算的或预先测量的信号飞行时间或信号迹线长度计算出的特征相位偏移值。 在另一个实施例中,发送装置产生一组串行延迟的写入时钟,其用于控制​​信号迹线上的符号传输,以便减少发送装置中同时的开关输出噪声和接地限制。
    • 10. 发明授权
    • Individual data line strobe-offset control in memory systems
    • 存储器系统中的单独数据线选通偏移控制
    • US07171321B2
    • 2007-01-30
    • US10923421
    • 2004-08-20
    • Scott C. Best
    • Scott C. Best
    • G01R35/00
    • G11C11/4076G06F13/1689G11C7/04G11C7/222
    • Systems and methods for strobe signal timing calibration and control in strobe-based memory systems are provided below. These strobe-offset control systems and methods receive a strobe signal from a memory device and in turn automatically generate separate per-bit strobe signals for use in receiving data on each data line of a memory system. The systems/methods generate the optimal per-bit strobe signals by automatically calibrating per-bit offset timing between data signals of individual data bits and corresponding strobe signals. The strobe-offset control system effectively removes the detected phase difference between the data signal and the strobe signal.
    • 以下提供了基于闪光灯的存储器系统中的选通信号定时校准和控制的系统和方法。 这些选通偏移控制系统和方法从存储器件接收选通信号,并且依次自动产生用于在存储器系统的每个数据线上接收数据的单独的每位选通信号。 系统/方法通过自动校准单个数据位的数据信号和相应的选通信号之间的每位偏移定时,产生最优的每位选通信号。 选通偏移控制系统有效地消除了检测到的数据信号与选通信号之间的相位差。