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1. 发明授权

US5901026A Output transistor protection circuit 失效
标题翻译：输出晶体管保护电路
公开(公告)号：US5901026A
公开(公告)日：1999-05-04
申请号：US884559
申请日：1997-06-27
申请人： Satoshi Furuno
发明人： Satoshi Furuno
IPC分类号： H03F1/52 , H03K17/082 , H02H3/08
CPC分类号： H03K17/0826
摘要： A protection circuit for a pnp-type output transistor includes a pnp-type monitor transistor through which a current 1/n (where n>1) times as high as the output current of the output transistor passes. A first, second, and third resistor are connected between the output electrode of the output transistor and ground. An output terminal is connected to the collector of the output transistor. A fourth and fifth resistor are connected serially between the output current of the monitor transistor and ground. When the voltage at the node between the fourth and fifth resistors exceeds a predetermined level, the conduction biases for the output and monitor transistors are reduced. When the voltage at the node between the first and second resistors drops below the voltage at the output side of the monitor transistor, the conduction biases are further reduced in accordance with the voltage difference.
摘要翻译：用于pnp型输出晶体管的保护电路包括pnp型监视晶体管，电流1 / n（其中n> 1）与输出晶体管的输出电流一样高的电流通过。第一，第二和第三电阻连接在输出晶体管的输出电极和地之间。输出端子连接到输出晶体管的集电极。第四和第五电阻串联连接在监视晶体管的输出电流和地之间。当第四和第五电阻之间的节点处的电压超过预定电平时，输出和监视晶体管的导通偏压减小。当第一和第二电阻之间的节点处的电压降到监视晶体管的输出侧的电压以下时，根据电压差进一步减小导通偏压。

2. 发明授权

US5917237A Semiconductor integrated circuit device and lead frame therefor 失效
标题翻译：半导体集成电路器件及其引线框架
公开(公告)号：US5917237A
公开(公告)日：1999-06-29
申请号：US864085
申请日：1997-05-28
申请人： Satoshi Furuno , Kenji Otani , Koichi Inoue , Koichi Yamasaki
发明人： Satoshi Furuno , Kenji Otani , Koichi Inoue , Koichi Yamasaki
IPC分类号： H01L23/12 , H01L21/52 , H01L23/02 , H01L23/495 , H01L23/48 , H01L23/04
CPC分类号： H01L24/32 , H01L23/49503 , H01L23/49575 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01023 , H01L2924/01033 , H01L2924/01065 , H01L2924/01073 , H01L2924/01082 , H01L2924/10158 , H01L2924/12042 , H01L2924/14
摘要： A single semiconductor chip containing a control portion and a power portion including a power element associated with the control portion and a concave portion formed between the control portion and the power portion is mounted on a die pad so as to separate the control portion and the power portion. The die pad has a convex portion which is received in the concave portion and the semiconductor chip is divided to separate the control portion and the power portion by applying pressure to the chip or by applying laser beams, and the separated semiconductor chip portions are simultaneously bonded to the die pad.
摘要翻译：包含控制部分的单个半导体芯片和包括与控制部分相关联的功率元件的功率部分和形成在控制部分和功率部分之间的凹部安装在芯片焊盘上，以分离控制部分和功率一部分。芯片焊盘具有容纳在凹部中的凸部，并且半导体芯片被分割以通过向芯片施加压力或通过施加激光束来分离控制部分和功率部分，并且分离的半导体芯片部分被同时结合到芯片垫。

3. 发明授权

US5686362A Method of manufacturing a semiconductor integrated circuit device 失效
标题翻译：制造半导体集成电路器件的方法
公开(公告)号：US5686362A
公开(公告)日：1997-11-11
申请号：US430377
申请日：1995-04-28
申请人： Satoshi Furuno , Kenji Ohtani , Koichi Inoue , Koichi Yamasaki , Keisuke Naganuma
发明人： Satoshi Furuno , Kenji Ohtani , Koichi Inoue , Koichi Yamasaki , Keisuke Naganuma
IPC分类号： H01L23/12 , H01L21/52 , H01L23/02 , H01L23/495 , H01L21/60
CPC分类号： H01L24/32 , H01L23/49503 , H01L23/49575 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01023 , H01L2924/01033 , H01L2924/01065 , H01L2924/01073 , H01L2924/01082 , H01L2924/10158 , H01L2924/12042 , H01L2924/14
摘要： A single semiconductor chip containing a control portion and a power portion including a power element associated with the control portion and a concave portion formed between the control portion and the power portion is mounted on a die pad so as to separate the control portion and the power portion. The die pad has a convex portion which is received in the concave portion and the semiconductor chip is divided to separate the control portion and the power portion by applying pressure to the chip or by applying laser beams, and the separated semiconductor chip portions are simultaneously bonded to the die pad.
摘要翻译：包含控制部分的单个半导体芯片和包括与控制部分相关联的功率元件的功率部分和形成在控制部分和功率部分之间的凹部安装在芯片焊盘上，以分离控制部分和功率一部分。芯片焊盘具有容纳在凹部中的凸部，并且半导体芯片被分割以通过向芯片施加压力或通过施加激光束来分离控制部分和功率部分，并且分离的半导体芯片部分被同时结合到芯片垫。

4. 发明授权

US5661639A Structure for attaching a heat sink to a semiconductor device 失效
标题翻译：用于将散热器附接到半导体器件的结构
公开(公告)号：US5661639A
公开(公告)日：1997-08-26
申请号：US547524
申请日：1995-10-24
申请人： Satoshi Furuno , Koichi Inoue
发明人： Satoshi Furuno , Koichi Inoue
IPC分类号： H01L23/28 , H01L23/40 , H05K7/20
CPC分类号： H01L23/4093 , H01L2924/0002
摘要： In a structure for attaching a heat sink to a semiconductor device in which a frame is encapsulated in a resin mold, a pin is formed integrally with the semiconductor device, and a hole engageable with the pin is formed integrally with the heat sink.
摘要翻译：在将散热器附接到其中框架被封装在树脂模具中的半导体器件的结构中，与半导体器件一体地形成销，并且与销接合的孔与散热器一体地形成。

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